Abstract: A semiconductor device including a logic circuit and a test circuit is provided which comprises: a logic signal terminal that supplies a signal to the logic circuit; a latch circuit that latches a signal based on a synchronization signal from the test circuit; a first selection circuit that supplies an external signal from the logic signal terminal to one of the logic circuit and the latch circuit selectively based on a test mode signal; and a second selection circuit that supplies one of the external signal and a signal from the test circuit selectively to a memory.

Abstract: A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.

Abstract: A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.

Abstract: This invention provides an electrode for an electrochemical cell in which an active material in an electrode material is a proton-conducting compound, wherein the electrode material comprises a nitrogen-containing heterocyclic compound or a polymer having a unit containing a nitrogen-containing heterocyclic moiety.

Abstract: This invention provides an electrode for an electrochemical cell in which an active material in an electrode material is a proton-conducting compound, wherein the electrode material comprises a nitrogen-containing heterocyclic compound or a polymer having a unit containing a nitrogen-containing heterocyclic moiety.

Abstract: A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.

Abstract: Disclosed is a semiconductor memory device which shortens an external access time when there is contention between an external access and an internal access. The semiconductor memory device includes an arbiter which receives a first entry signal for entering a first access mode (external access) and a second entry signal for entering a second access mode (internal access) and determines priority of the first and second access modes in accordance with an order of receipt of the first and second entry signals. The arbiter sequentially generates a first mode trigger signal corresponding to the first entry signal and a second mode trigger signal corresponding to the second entry signal in accordance with the determined priority. The arbiter executes the first access mode by priority over the second access mode when the arbiter is supplied with the first entry signal with a predetermined period after the second access mode has been determined to have priority.

Abstract: A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.

Abstract: A secondary battery and capacitor includes as an active material of an electrode a compound having a trimer structure comprising three structure units of one or more kind of indole compounds selected from indole and indole derivatives and a condensed polycyclic structure having a six-membered ring composed of atoms of the second and the third position of the each three structure units, wherein the active material comprises as the compound a first compound having a trimer structure wherein any bonds between the structure units are formed among the second position of one structure unit and the third position of the other structure unit and a second compound having a trimer structure comprising a bond formed among the second position of one structure unit and the second position of the other structure unit, and a proton is utilized as a charge carrier of the first compound and the second compound.

Abstract: A fireproof structure protects water pipes with stable durability even in a high temperature gas environment. Even in a case where it falls off, it does not leave the water pipes suddenly exposed. The fireproof structure for protecting water pipes 25B installed on water pipe walls of a combustion gas side is configured by a double-layered structure made up of an outer layer water pipe protective structure facing towards the combustion gas side, which is fireproof tile 13, and an inner layer water pipe protective structure provided between the outer layer water pipe protective structure and the water pipes, which is fireproof castable 12. The thickness ratio between the castable 12 and the tiles 13 lies within the range of about 2:1 to 3:1, and the ratio between the thickness of the fireproof castable and the radius of the water pipe is set to 1+?:1, wherein the value of ? ranges from approximately 0.1 to 0.3. The water pipes are equipped with hanging hooks 15a for tiles 13.

Abstract: A low noise amplification circuit comprises a low noise amplifier and a filter coupled to the input terminal of the low noise amplifier. The low noise amplifier comprises an amplifying element and a matching input circuit coupled to the input terminal of the amplifying element. When gamma.sub.s shows a reflection factor in the case that signals flow from the input terminal of the amplifying element to the output terminal of the matching input circuit, impedance conversion for setting the gamma.sub.s at a desired value is made entirely or in part by means of setting the output impedance of the filter at the value different from that of characteristic impedance.

Abstract: A semiconductor memory device that reduces the time for conducting a multiple word line selection test and operates stably. The semiconductor memory device includes memory cell blocks, row decoders, sense amps, block control circuits, and sense amp drive circuits. Each block control circuit generates a reset signal. The reset signal is used to select the word lines with the row decoders at timings that differ between the blocks. Each block control circuit provides the reset signal to the associated row decoder. The block control circuit also provides the reset signal to the associated sense amp drive circuit so that the sense amps are inactivated at timings that differ between the blocks.

Abstract: A fireproof structure protects water pipes with stable durability even in a high temperature gas environment. Even in a case where it falls off, it does not leave the water pipes suddenly exposed. The fireproof structure for protecting water pipes 25B installed on water pipe walls of a combustion gas side is configured by a double-layered structure made up of an outer layer water pipe protective structure facing towards the combustion gas side, which is fireproof tile 13, and an inner layer water pipe protective structure provided between the outer layer water pipe protective structure and the water pipes, which is fireproof castable 12. The thickness ratio between the castable 12 and the tiles 13 lies within the range of about 2:1 to 3:1, and the ratio between the thickness of the fireproof castable and the radius of the water pipe is set to 1+?:1, wherein the value of ? ranges from approximately 0.1 to 0.3. The water pipes are equipped with hanging hooks 15a for tiles 13.

Abstract: An image forming apparatus transfers a toner image formed on a photoconductor drum onto a sheet-like recording member while the sheet-like recording member is transported and attracted to a transfer belt, and comprises a jam handling control unit for detecting a transport fault of the sheet-like recording member, and for stopping the transport operation when the transport fault is detected. When the transport fault is detected in a section other than a fixing section, the jam handling control unit first causes the transport operation of the fixing section, and thereafter causes the transfer belt and the transport operation on the upstream side thereof to stop, and any sheet-like recording member remaining on the transfer belt so that the transport mechanism on the upstream side thereof is transported and stopped at the position spanning between the area of the fixing section and the area of the transfer belt.

Abstract: A proton-conducting electric double layer capacitor comprising a electrolytic solution containing an aqueous solution of an organic or inorganic acid whereto a water-soluble N-containing heterocyclic compound is added.

Abstract: A small battery and an electric double layer capacitor exhibit adequate cell voltage and capacitor withstand voltage. Specifically, the battery or electric double layer capacitor includes basic cells having a pair of electrodes oppositely laminated via the separator, and an electrolyte are packaged in a resin sheet package. The basic cells are laminated in series via a sheet current collector. The sheet current collector extends to an edge of the resin sheet package around the periphery of the basic cells laminated on both sides of the current collector. The sheet current collector is glued or fused to the resin sheet in its edge. The adjacent basic cells via the sheet current collector are fluid-tightly separated within the resin sheet package.

Abstract: This invention concerns a heat-resistant assembly having a heat-resistant block conformed to the contours of boiler tubes and the surface of their connecting rib. The heat-resistant assembly has an arm which protrudes from the surface of the rib toward the heat-resistant block and which has a catch on the end. The block has an indentation in which the catch on the arm engages. The block can be hung on or removed from the tube assembly by means of the arms and indentations. The heat-resistant assembly is further distinguished by the fact that a space is created between the end of the arm and the indentation of the block. A fusible substance, which will melt when the temperature of the arm exceeds a given value, is placed in the space. The heat-resistant assembly is further distinguished by the fact that an indentation is formed in the block in which a heat-resistant sleeve is adhered to engage the arm. This arrangement makes it possible to manufacture the heat-resistant block using press molding.

Abstract: A plurality of photosensitive drums are disposed in a sheet transport direction so as to be in contact with a transfer belt and a transfer voltage for transferring toner images on the photosensitive drums onto a sheet transported by the transfer belt is applied thereto. A sensor for sensing a temperature or humidity in the working atmosphere of the image forming apparatus is provided; when a jam occurs, sheet transportation is ceased at a first stage to thereby enable the sheet in the jam to be removed; at a second stage subsequent thereto, transportation of the sheet is restarted; and the transfer voltage applied onto the transfer belt is controlled based on a measurement result of the sensor.

Abstract: A refresh method for a semiconductor memory device features high noise resistance, lower power consumption, and lower cost. All word lines of one or more memory cell blocks that have not been selected in a self refresh mode are controlled to have a floating potential substantially at ground level. Even when a word line and a bit line are short-circuited, this control prevents destruction of memory cell information, which may be caused by noise, and also prevents generation of leakage current. A fuse, etc., for preventing generation of leakage current is unnecessary, so that lower cost is realized.

Abstract: A proton-conducting electric double layer capacitor comprising a electrolytic solution containing an aqueous solution of an organic or inorganic acid whereto a water-soluble N-containing heterocyclic compound is added.