Abstract: An ignition timing controller for an engine includes basic knock-limit ignition timing calculation means that calculates a basic knock-limit ignition timing on the basis of an operating state of the engine; learning-region variation calculation means that learns the knock-limit ignition timing of the engine in two operating regions and thereby calculates a learning-region variation due to octane number and a learning-region variation due to humidity in one of the operating regions; estimated variation calculation means that estimates a variation due to octane number and a variation due to humidity in a present operating state on the basis of the learning-region variation due to octane number and the learning-region variation due to humidity; and knock-limit ignition timing calculation means that calculates the knock-limit ignition timing in the present operating state on the basis of the basic knock-limit ignition timing, the variation due to octane number, and the variation due to humidity.

Abstract: Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being formed in the termination region; body regions; a gate insulating film; gate electrodes; source regions; and body potential extraction regions, wherein voids are formed in the second conductivity type pillar regions of the termination region.

Abstract: A control device includes an opening detector that detects the opening of a control valve driven by an electric actuator. A control element sets the target opening of the control valve, thereby to control the electric actuator in accordance with a deviation between the target opening and the detected opening. In the case where a predetermined necessary condition containing at least a condition for the absolute value of the deviation to be smaller than a predetermined value is satisfied, power to the electric actuator is interrupted to prevent the electric actuator from generating a driving force. This reduces situations where the driving force to be applied from the electric actuator to the control valve fluctuates finely to suppress the progress of the wear or deterioration of the components of the electric actuator.

Abstract: In a thermal displacement compensating device and a thermal displacement compensating method for a machine tool, a block temperature obtaining section obtains temperatures of respective blocks based on temperature information detected by temperature sensors wherein temperatures in each of the respective blocks into which a column is divided to be pluralized are defined as a uniform value. An FEM analysis section performs a structural analysis by a finite element method based on the temperatures of the respective blocks obtained by the block temperature obtaining section and infers thermal displacement amounts of the column. A compensation value calculation section calculates a compensation value for a machining command position based on the thermal displacement amounts of the column inferred by the FEM analysis section. A compensation section compensates the machining command position by the compensation value obtained by the compensation value calculation section.

Abstract: A member fastening structure has an installation member (for example, grommet) and a leg member (for example, pin). A projecting part, having at least one inclined surface, and a projecting wall, for contacting with the inclined surface of the projecting part and guiding in a direction of removing the leg member (for example, pin) from the installation member (for example, grommet) in a case when the leg member (for example, pin) is rotated in a state where elastic leg pieces are spread open, are provided between the installation member (for example, grommet) and the leg member (for example, pin).

Abstract: A semiconductor device includes a first conductive type first semiconductor region, a second semiconductor region, and a second conductive type lateral RESURF region. The first semiconductor region is arranged on a first electrode side. The second semiconductor region includes first conductive type first pillar regions and a terminal part. The second pillar regions are alternately arranged on an element part. The terminal part is formed around the element part along a surface of the first semiconductor region on a second electrode side opposite to the first electrode side of the first semiconductor region. Furthermore, the second conductive type lateral RESURF region is formed in the second semiconductor region on the terminal part.

Abstract: A semiconductor device includes a first conductive type first semiconductor region, a second semiconductor region, and a second conductive type lateral RESURF region. The first semiconductor region is arranged on a first electrode side. The second semiconductor region includes first conductive type first pillar regions and a terminal part. The second pillar regions are alternately arranged on an element part. The terminal part is formed around the element part along a surface of the first semiconductor region on a second electrode side opposite to the first electrode side of the first semiconductor region. Furthermore, the second conductive type lateral RESURF region is formed in the second semiconductor region on the terminal part.

Abstract: A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.

Abstract: A semiconductor device includes: a first semiconductor region of a first conductivity type disposed on the side of a first electrode; and a second semiconductor region having first pillar regions of the first conductivity type and second pillar regions of a second conductivity type, the first pillar regions and the second pillar regions being provided in paired state and alternately, in a device portion and a terminal portion surrounding the device portion, along a surface on the side of a second electrode disposed on the opposite side of the first semiconductor region from the first electrode. The semiconductor device further includes a lateral RESURF (reduced surface field) region of the second conductivity type disposed at a surface portion, on the opposite side from the first semiconductor region, of the second semiconductor region in the terminal portion.

Abstract: A fastening member has a head part, a shaft part, a thinly formed flange extending in a straight shape from an outer perimeter of the head part, and a coupling device (for example, head part of a grommet). A part has a through-hole, and a wall part positioned on an outer perimeter of the through hole and extending toward the direction of insertion of the shaft part. A base has an installation hole allowing insertion of the shaft part. When the base and the part are bound by insertion of the shaft part, the flange is pressed against the wall part and becomes in a bent-back state.

Abstract: Disclosed herein is a semiconductor device, including: a first semiconductor region of a first conductivity type; a second semiconductor region having pairs of first pillar regions of the first conductivity type, and second pillar regions of a second conductivity type alternately provided; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the first conductivity type; and control electrodes each provided within a trench through an insulating film, a sidewall of the trench being formed so as to contact each of the third semiconductor region and the fourth semiconductor region.

Abstract: A redundant communication system includes a first control device which calculates a control command value of an electric power device, and outputs first and second command signals; a second control device which controls the electric power device on the basis of one of the first and second control command values; and primary and secondary communication lines for respectively transmitting the first and second command signals to the second control device. The second control device comprises: a primary communication line abnormality determining unit which determines that the primary communication line is abnormal when a non-reception state or an abnormality state of the first command signal continues during a predetermined period; and a control command value switching unit which selects one of the first and second control command values in a switching manner and switches the selection from the first to the second control command value within the predetermined period.

Abstract: A method of adjusting a fuel distribution includes: adjusting a distribution of a fuel supply amount to a membrane electrode assembly so that a temperature distribution in the membrane electrode assembly becomes substantially uniform by a membrane provided in a fuel supply side of the membrane electrode assembly of a fuel cell. A membrane adjusts a fuel distribution, which is provided in a fuel supply side of a membrane electrode assembly of a fuel cell. The membrane is provided with openings so that a temperature distribution in the membrane electrode assembly becomes substantially uniform.

Abstract: The nonaqueous secondary battery of the present invention comprises a positive electrode having a positive electrode mixture layer containing a lithium-containing composite oxide as a positive electrode active material, a negative electrode, a separator, and a nonaqueous electrolyte. The surface of the positive electrode active material or the positive electrode mixture layer is coated with polyvalent organic metal salt, particularly preferably with fluorine-containing polyvalent organic lithium salt.

Abstract: A utility part assembly includes a vehicular interior part and a utility part. The vehicular interior part has a first surface and a second surface that is opposite to the first surface and has a first mounting hole and a second mounting hole. The utility part includes a first member provided on the first surface and a second member provided on the second surface. The first member has a first coupling pin and one of a second coupling pin and a first coupling hole, and the second member has a coupling portion that is coupled to the first coupling pin and another one of the second coupling pin and the first coupling hole. The first coupling pin is inserted through the first mounting hole and coupled to the coupling portion, and the second coupling pin is inserted through the second mounting hole and coupled to the first coupling hole.

Abstract: Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being formed in the termination region; body regions; a gate insulating film; gate electrodes; source regions; and body potential extraction regions, wherein voids are formed in the second conductivity type pillar regions of the termination region.

Abstract: A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.

Abstract: A clip includes a head part, and a leg part, and allows pushing-in of the leg part into a mounting hole provided in an object to be clipped by elastically deforming one part of the leg part and clips on the object to be clipped by sandwiching the object to be clipped between the head part and the one part of the leg part by elastically returning the one part of the leg part back to its original state at a pushing-in finish position of the leg part. The leg part includes a non-deformable part, and a deformable part extending from the non-deformable part which becomes the one part of the leg part, and both the tip of the deformable part and the base portion linked to the non-deformable part are formed to extend along a virtual spiral around the central axis of the leg part.

Abstract: Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being formed in the termination region; body regions; a gate insulating film; gate electrodes; source regions; and body potential extraction regions, wherein voids are formed in the second conductivity type pillar regions of the termination region.

Abstract: A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.