Abstract: Disclosed herein is a semiconductor device, including: a first semiconductor region of a first conductivity type; a second semiconductor region having pairs of first pillar regions of the first conductivity type, and second pillar regions of a second conductivity type alternately provided; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the first conductivity type; and control electrodes each provided within a trench through an insulating film, a sidewall of the trench being formed so as to contact each of the third semiconductor region and the fourth semiconductor region.

Abstract: Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being formed in the termination region; body regions; a gate insulating film; gate electrodes; source regions; and body potential extraction regions, wherein voids are formed in the second conductivity type pillar regions of the termination region.

Abstract: A semiconductor device includes a first conductive type first semiconductor region, a second semiconductor region, and a second conductive type lateral RESURF region. The first semiconductor region is arranged on a first electrode side. The second semiconductor region includes first conductive type first pillar regions and a terminal part. The second pillar regions are alternately arranged on an element part. The terminal part is formed around the element part along a surface of the first semiconductor region on a second electrode side opposite to the first electrode side of the first semiconductor region. Furthermore, the second conductive type lateral RESURF region is formed in the second semiconductor region on the terminal part.

Abstract: Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being formed in the termination region; body regions; a gate insulating film; gate electrodes; source regions; and body potential extraction regions, wherein voids are formed in the second conductivity type pillar regions of the termination region.

Abstract: Disclosed herein is a semiconductor device, including: a first semiconductor region of a first conductivity type; a second semiconductor region having pairs of first pillar regions of the first conductivity type, and second pillar regions of a second conductivity type alternately provided; a third semiconductor region of the second conductivity type; a fourth semiconductor region of the first conductivity type; and control electrodes each provided within a trench through an insulating film, a sidewall of the trench being formed so as to contact each of the third semiconductor region and the fourth semiconductor region.

Abstract: An ignition timing controller for an engine includes basic knock-limit ignition timing calculation means that calculates a basic knock-limit ignition timing on the basis of an operating state of the engine; learning-region variation calculation means that learns the knock-limit ignition timing of the engine in two operating regions and thereby calculates a learning-region variation due to octane number and a learning-region variation due to humidity in one of the operating regions; estimated variation calculation means that estimates a variation due to octane number and a variation due to humidity in a present operating state on the basis of the learning-region variation due to octane number and the learning-region variation due to humidity; and knock-limit ignition timing calculation means that calculates the knock-limit ignition timing in the present operating state on the basis of the basic knock-limit ignition timing, the variation due to octane number, and the variation due to humidity.

Abstract: A pneumatic tire and a rim includes a noise damper, fixed to a tire inner surface or a rim inner surface with the upper surface facing a tire inner space, and extending in the tire circumferential direction. The noise damper is made of a sponge having a volume ranging from 0.4 to 20% of the volume of the tire inner space. The noise damper is a laterally long and flat, with a maximum thickness ranging from 5 to 45 mm and a width more than the maximum thickness. The upper surface extends along a wavy curve including a hilltop, valley bottoms on each side of the hilltop and slopes extending down to the respective valley bottoms from the hilltop. Each end of the upper surface is terminated at the valley bottoms or the slopes. A thickness from the upper surface to the bottom surface ranges from 1.0 to 15.0 mm.

Abstract: An electronic appliance includes a battery mounting portion on which two types of batteries are selectively mounted, wherein the battery mounting portion has: a battery mounting recessed portion; an appliance side connecting terminal; an urging member; and a single manipulating member; while a battery side connecting terminal of one battery is being attached to one appliance side connecting terminal, one engaging member is engaged with the one battery to prevent the one battery from moving in a direction of detaching the battery side connecting terminal from the one appliance side connecting terminal; and while a battery side connecting terminal of the other battery is being attached to the other appliance side connecting terminal, the other engaging member is engaged with the other battery to prevent the other battery from moving in a direction of detaching the battery side connecting terminal from the other appliance side connecting terminal.

Abstract: The present invention provides a method for extraction of metals selected from Cr, Mo, Pd, Tc, W, Re, and Pu using a new extractant of methyliminobisalkylacetamide represented by a formula (I): CH3—N—(CH2CONR2)2??(I) wherein R represents an alkyl group having 8-12 carbon atoms.

Abstract: An internal combustion engine knock determining device includes a vibration detector that produces a signal corresponding to engine vibration, an intensity computing unit that retrieves vibrational components in a plurality of frequency regions in which vibration intensity peaks are located when knock occurs, a background-noise computing unit that calculates background noise caused by factors other than knock, a frequency computing unit that determines specific frequency regions from which to determine whether knock is occurring by excluding certain frequency regions designated as frequency regions requiring exclusion due to the intensity of false-detection causing noise as a proportion of the background noise in the certain regions, and a knock determining unit that determines the occurrence of knock based on the vibration intensity in the specific frequency regions obtained by excluding the frequency regions requiring exclusion, wherein the number of specific frequency regions is increased to improve the ac

Abstract: A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.

Abstract: A semiconductor device includes a first conductive type semiconductor substrate; a first conductive type semiconductor region provided thereon in which first conductive type first pillar regions and second conductive type second pillar regions alternately arranged; second conductive type second semiconductor regions provided on second pillar regions in an element region to be in contact with first pillar regions therein; gate electrodes each provided on adjacent second semiconductor regions and on one of the first pillar region interposed therebetween; third semiconductor regions functioning as a first conductive type source region provided in parts of the second semiconductor regions located under side portions of the gate electrodes; and a second conductive type resurf region which is a part of a terminal region surrounding the element region and which is provided on first pillar regions and second pillar regions in the part of the terminal regions.

Abstract: A control device includes an opening detecting means 17 which detects the opening of a control valve 9 driven by an electric actuator 11. A control element 21 sets the target opening of the control valve 9, thereby to control the electric actuator 11 in accordance with a deviation between the target opening and the detected opening. In the case where a predetermined necessary condition containing at least a condition for the absolute value of the deviation to be smaller than a predetermined value is satisfied, power to the electric actuator 11 is interrupted to prevent the electric actuator 11 from generating a driving force. This reduces situations where the driving force to be applied from the electric actuator to the control valve fluctuates finely to suppress the progress of the wear or deterioration of the components of the electric actuator.

Abstract: A redundant communication system includes: a first control device which calculates a control command value of an electric power device equipped in a vehicle, and outputs first and second command signals respectively corresponding to the control command value; a second control device which controls the electric power device on the basis of one of first and second control command values respectively corresponding to the first and the second command signals received from the first control device; a primary communication line which transmits the first command signal from the first control device to the second control device; and a secondary communication line which transmits the second command signal from the first control device to the second control device, wherein the second control device comprises: a primary communication line abnormality determining unit which determines that the primary communication line is abnormal, when a non-reception state of the first command signal or an abnormality state of the fir

Abstract: A magnetic recording medium having a nonmagnetic substrate, and a soft magnetic layer and a ferromagnetic layer having a thickness of 5 to 150 nm formed in this order on the nonmagnetic substrate, in which, the ferromagnetic layer contains a spherical, ellipsoidal or plate-form ferromagnetic powder and a binder, and has an axis of easy magnetization substantially in a perpendicular direction, and the soft magnetic layer contains a spherical or ellipsoidal magnetite soft magnetic powder having a particle size of 30 nm or less, a rate of variation in particle size of 20% or less and a saturation magnetization of 10 to 60 Am2/kg, and a binder.

Abstract: Disclosed herein is a semiconductor device including: a first conductivity type semiconductor base body; a first conductivity type pillar region; second conductivity type pillar regions; element and termination regions provided in the first and second conductivity type pillar regions, transistors being formed in the element region, and no transistors being formed in the termination region; body regions; a gate insulating film; gate electrodes; source regions; and body potential extraction regions, wherein voids are formed in the second conductivity type pillar regions of the termination region.

Abstract: A substrate holding member according to an embodiment includes an opening having a minimum internal diameter lager than a diameter of a space in which a substrate to be exposed on a substrate stage is disposed, wherein an inner peripheral surface of the opening has a shape expanding toward a lower surface at least partly.

Abstract: The present invention provides a method for extraction of metals selected from Cr, Mo, Pd, Tc, W, Re, and Pu using a new extractant of methyliminobisalkylacetamide represented by a formula (I): CH3—N—(CH2CONR2)2 ??(I) wherein R represents an alkyl group having 8-12 carbon atoms.

Abstract: A magnetic recording medium comprising a nonmagnetic support and a magnetic layer formed on the support and containing a magnetic powder and a binder, wherein said magnetic powder comprises substantially spherical or ellipsoidal particles and at least one element selected from the group consisting of rare earth elements, silicon and aluminum, and has a Fe16N2 phase, an average particle size of 5 to 30 nm and an axis ratio (a ratio of a major axis to a minor axis) of 1 to 2. This magnetic recording medium achieves a high output and has excellent short wavelength recording properties, since it uses a magnetic powder having a very small particle size and has a very high coercive force and a saturation magnetization suitable for high density recording.