Abstract: An information processing apparatus which controls a plurality of vehicle platforms which can be coupled to and separated from a predetermined vehicle interior unit, the information processing apparatus comprises a controller configured to execute: transmitting a first command to transport the vehicle interior unit to a first location and install the vehicle interior unit, to one of the plurality of vehicle platforms; and in a case where all people who are to be on board the vehicle interior unit and move are on board the installed vehicle interior unit, transmitting a second command to transport the vehicle interior unit to a second location which is a destination of the people, to one of the plurality of vehicle platforms.

Abstract: An organic electroluminescence device includes an anode, a cathode, a first emitting layer, and a second emitting layer disposed between the first emitting layer and the cathode, the first emitting layer containing a first host material in a form of a first compound represented by a formula (101) below, the second emitting layer containing a second host material in a form of a second compound represented by a formula (2) below, the first emitting layer and the second emitting layer being in direct contact with each other.

Abstract: A semiconductor device includes a semiconductor layer having a first main surface on one side and a second main surface on the other side, a unit cell including a diode region of a first conductivity type formed in a surface layer portion of the first main surface of the semiconductor layer, a well region of a second conductivity type formed in the surface layer portion of the first main surface of the semiconductor layer along a peripheral edge of the diode region, and a first conductivity type region formed in a surface layer portion of the well region, a gate electrode layer facing the well region and the first conductivity type region through a gate insulating layer and a first main surface electrode covering the diode region and the first conductivity type region on the first main surface of the semiconductor layer, and forming a Schottky junction with the diode region and an ohmic junction with the first conductivity type region.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal and having a first main surface as an element forming surface, a second main surface at a side opposite to the first main surface, and a plurality of side surfaces connecting the first main surface and the second main surface, and a plurality of modified lines formed one layer each at the respective side surfaces of the SiC semiconductor layer and each extending in a band shape along a tangential direction to the first main surface of the SiC semiconductor layer and modified to be of a property differing from the SiC monocrystal.

Abstract: An SiC semiconductor device includes an SiC semiconductor layer including an SiC monocrystal that is constituted of a hexagonal crystal and having a first main surface as a device surface facing a c-plane of the SiC monocrystal and has an off angle inclined with respect to the c-plane, a second main surface at a side opposite to the first main surface, and a side surface facing an a-plane of the SiC monocrystal and has an angle less than the off angle with respect to a normal to the first main surface when the normal is 0°.

Abstract: The semiconductor device of the present invention includes a semiconductor layer which includes an active portion and a gate finger portion, an MIS transistor which is formed at the active portion and includes a gate trench as well as a source region, a channel region and a drain region sequentially along a side surface of the gate trench, a plurality of first gate finger trenches arranged by an extended portion of the gate trench at the gate finger portion, a gate electrode embedded each in the gate trench and the first gate finger trench, a second conductive-type first bottom-portion impurity region formed at least at a bottom portion of the first gate finger trench, a gate finger which crosses the plurality of first gate finger trenches and is electrically connected to the gate electrode, and a second conductive-type electric field relaxation region which is formed more deeply than the bottom portion of the first gate finger trench between the mutually adjacent first gate finger trenches.

Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type having a first main surface at one side and a second main surface at another side, a trench gate structure including a gate trench formed in the first main surface of the semiconductor layer, and a gate electrode embedded in the gate trench via a gate insulating layer, a trench source structure including a source trench formed deeper than the gate trench and across an interval from the gate trench in the first main surface of the semiconductor layer, a source electrode embedded in the source trench, and a deep well region of a second conductivity type formed in a region of the semiconductor layer along the source trench, a ratio of a depth of the trench source structure with respect to a depth of the trench gate structure being not less than 1.5 and not more than 4.

Abstract: A polarizer that can realize the multi-functionalization and high-functionalization of an electronic device, such as an image display apparatus. A polarizer including a resin film containing a dichroic substance, wherein the polarizer has a low dichroic substance concentration portion whose content of the dichroic substance is relatively low in the resin film. In the polarizer, the low dichroic substance concentration portion has a content of an alkali metal and/or an alkaline earth metal of 3.6 wt % or less.

Abstract: A semiconductor device includes a semiconductor layer of a first conductivity type. A well region that is a second conductivity type well region is formed on a surface layer portion of the semiconductor layer and has a channel region defined therein. A source region that is a first conductivity type source region is formed on a surface layer portion of the well region. A gate insulating film is formed on the semiconductor layer and has a multilayer structure. A gate electrode is opposed to the channel region of the well region where a channel is formed through the gate insulating film.

Abstract: There is provided a vehicle system including: a body unit; a traveling unit capable of traveling with the body unit being mounted thereon; coupling units configured to couple the body unit and the traveling unit; a sensor used for predicting a crash; a controller configured to execute causing coupling between the traveling unit and the body unit by the coupling units to be released when a crash is predicted based on a detection value of the sensor; an acting unit provided on one of the traveling unit and the body unit and configured to act so that a positional relationship between the body unit and the traveling unit is changed when the coupling is released; and an acted-upon unit provided on the other between the traveling unit and the body unit and configured to receive action of the acting unit.

Abstract: A system includes a traveling unit provided with a movement mechanism; a plurality of types of main body units equipped with different facilities, each main body unit being configured to form an emergency vehicle by being coupled with the traveling unit; and an information processing apparatus configured to manage the traveling unit and the plurality of types of main body units. The information processing apparatus includes a processor configured to analyze details of a first emergency call made to a fire-fighting organization, select a main body unit of a first type equipped with a facility matching the details of the first emergency call from the plurality of types of main body units, and dispatch an emergency vehicle coupling the main body unit of the first type and the traveling unit.

Abstract: This compound is represented by formula (1).

Abstract: An information processing apparatus includes: a memory configured to store information about mobile bodies, each of which forms a vehicle by being coupled with a main body unit and is capable of autonomous driving; and a processor configured to transmit a summon command to a first mobile body existing within a predetermined range, the summon command summoning the first mobile body to a predetermined assembly location, and cause a predetermined number of first mobile bodies assembled at the predetermined assembly location to carry one first main body unit that is larger or heavier than a main body unit that can be carried by one first mobile body, and to cause the predetermined number of first mobile bodies to move to a predetermined destination.

Abstract: The semiconductor device of the present invention includes a semiconductor layer which includes an active portion and a gate finger portion, an MIS transistor which is formed at the active portion and includes a gate trench as well as a source region, a channel region and a drain region sequentially along a side surface of the gate trench, a plurality of first gate finger trenches arranged by an extended portion of the gate trench at the gate finger portion, a gate electrode embedded each in the gate trench and the first gate finger trench, a second conductive-type first bottom-portion impurity region formed at least at a bottom portion of the first gate finger trench, a gate finger which crosses the plurality of first gate finger trenches and is electrically connected to the gate electrode, and a second conductive-type electric field relaxation region which is formed more deeply than the bottom portion of the first gate finger trench between the mutually adjacent first gate finger trenches.

Abstract: A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.

Abstract: To effectively utilize user's belongings that are not being used. The information processing apparatus includes a processor configured to: determine, when a use request is received from a second user for a room unit in which a first user stores at least one of the first user's belongings as a storeroom, a transport unit that connects to the room unit and transports the room unit to a designated place by the second user; and cause the transport unit connected to the room unit to move to the designated place by the second user and to separate from the room unit at the designated place by the second user.

Abstract: Provided is the information processing apparatus that includes a processor configured to: when a rental request for a traveling unit that forms a vehicle by connecting to a body unit and information regarding a destination of move by the vehicle are received from a user terminal, acquire a route to the destination; when a road included in the route to the destination is a first road having a predetermined characteristic, determine a first traveling unit having a performance corresponding to the characteristic of the first road from a plurality of traveling units; and transmit information regarding the route to the destination and information regarding the first traveling unit to the user terminal.

Abstract: A semiconductor device includes a semiconductor layer having a first main surface on one side and a second main surface on the other side, a unit cell including a diode region of a first conductivity type formed in a surface layer portion of the first main surface of the semiconductor layer, a well region of a second conductivity type formed in the surface layer portion of the first main surface of the semiconductor layer along a peripheral edge of the diode region, and a first conductivity type region formed in a surface layer portion of the well region, a gate electrode layer facing the well region and the first conductivity type region through a gate insulating layer and a first main surface electrode covering the diode region and the first conductivity type region on the first main surface of the semiconductor layer, and forming a Schottky junction with the diode region and an ohmic junction with the first conductivity type region.

Abstract: An organic electroluminescence device includes an anode, a cathode, a first emitting layer, and a second emitting layer disposed between the first emitting layer and the cathode, the first emitting layer containing a first host material in a form of a first compound represented by a formula (101) below, the second emitting layer containing a second host material in a form of a second compound represented by a formula (2) below, the first emitting layer and the second emitting layer being in direct contact with each other.