Abstract: A substrate of the surface protective film giving a film attached to the surface of a building material, a painted steel sheet, etc. for the purpose of prevention of damage easy applicability and easy removability and a surface protective film using the same, that is, a substrate of the surface protective film comprised of at least two film layers with different physical properties, wherein an outermost film layer forming an outermost surface corresponding to another surface facing one surface of the substrate exhibits a tensile modulus of elasticity based on JIS-K-7127 (2000) lower than a tensile modulus of elasticity of the substrate as a whole and a surface protective film comprised of such a substrate of the surface protective film on one surface of which an adhesive layer is formed.

Abstract: A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

Abstract: A semiconductor device having excellent characteristics is provided without deteriorated film quality. A first oxide film is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate are set equal to each other. In the first oxide film, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. The thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C become 1.5 times of a sectional area of the region B, while a film thickness of the region B is maintained.

Abstract: It is an object of the invention to provide a semiconductor device having excellent characteristics, and to provide a producing method of the semiconductor device capable of producing the semiconductor device having excellent characteristics without deteriorating a film quality in the producing process. A first oxide film 2′ is divided into three regions A, B and C. Lengths I, II and III of the regions A, B and C in a plane direction of the silicon substrate 1 are set equal to each other. In the first oxide film 2′, a thermal treatment is carried out such that the film thicknesses of the regions A and C are increased. More specifically, the thermal treating time, the thermal treating temperature and other parameters are adjusted such that sectional areas of the regions A and C becomes 1.5 times of a sectional area of the region B. It is preferable that a film thickness of the region B is maintained.