Abstract: A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.

Abstract: A solid-state imaging apparatus is provided. The apparatus comprises a pixel region where a photoelectric conversion element is arranged, a first insulating film having a first opening portion which is over the photoelectric conversion element, a first insulator comprising a first portion arranged in the first opening portion, and a second portion covering an upper surface of the first portion and an upper surface of the first insulating film, a second insulating film having a second opening portion which is over the first opening portion, and a third portion arranged in the second opening portion. A hydrogen concentration of the second portion is higher than a hydrogen concentration of the first insulating film. An upper surface area of the first portion is larger than a lower surface area of the third portion which is over the first portion.

Abstract: One or more methods of manufacturing a solid-state image pickup apparatus and one or more methods of manufacturing a light reflection member are provided herein, and one or more embodiments thereof may include forming a first insulating film and forming a photoresist pattern on the first insulating film. Furthermore, one or more embodiments of such methods may include forming an opening portion by removing the first insulating film while having the photoresist pattern serve as a mask and forming a light reflection member on a sidewall of the opening portion formed in the first insulating film.

Abstract: A manufacturing method of an imaging apparatus includes a process of forming, on a same substrate, gate electrodes of multiple MOS transistors forming pixel circuits and gate electrodes of multiple MOS transistors forming peripheral circuits, and a process of forming, on the substrate, an insulating film covering the gate electrodes of the multiple MOS transistors found in the pixel circuits and the gate electrodes of the multiple MOS transistors found in the peripheral circuits. A thickness of the gate electrode of a first MOS transistor in the multiple MOS transistors found in the pixel circuits is 1.2 times or more a thickness of the gate electrode of a second MOS transistor in the multiple MOS transistors found in the peripheral circuits.

Abstract: One or more methods of manufacturing a solid-state image pickup apparatus and one or more methods of manufacturing a light reflection member are provided herein, and one or more embodiments thereof may include forming a first insulating film and forming a photoresist pattern on the first insulating film. Furthermore, one or more embodiments of such methods may include forming an opening portion by removing the first insulating film while having the photoresist pattern serve as a mask and forming a light reflection member on a sidewall of the opening portion formed in the first insulating film.

Abstract: A information processing unit includes: a control unit configured to control operation processing of individual units through a user interface; a print set value storage unit configured to store a print set value that is set by operation of an operation unit on a basic setting screen displayed on a display unit on which setting relating to the color printing is performed at a basic level and a print detail set value that is set by operation of the operation unit on a detail setting screen as another dialog on which the setting is performed at a detail level under operation control of the control unit; and a print data creating unit configured to create print data of the color printing based on the print set value and the print detail set value under operation control of the control unit.

Abstract: Disclosed is a non-transitory computer-readable recording medium storing a print control program, which when executed by a processor, causes an information processing apparatus connected to a printer via a network to perform a process. The process includes causing a screen generator to generate a plurality of screens via which respective instructions for a plurality of print settings are received from a user, causing a display controller to display setting items corresponding to the screens in a predetermined order, and control switching between the screens based on the respective instructions corresponding to the setting items received from the user, and causing a print setting limiter to limit the respective print settings, for which the respective instructions are received from the user via the respective screens, based on the predetermined order of the setting items.

Abstract: Disclosed is a non-transitory recording medium storing a function setting program for utilizing an image forming apparatus. The function setting program, when processed by a processor, executes a process including receiving a page range to which page process functions settable by page unit are applied, by each of the page process functions, receiving a page range to which post process functions executable after forming an image are applied, by each of the post process functions, and displaying a list of the functions applied to each of the page ranges on a display part by associating the page range to which the post process functions are applied, among the page ranges to which the post process functions are applied, the page range to which image process functions are applied so as to identify types of the functions applied to a corresponding one of the page ranges.

Abstract: A information processing unit includes: a control unit configured to control operation processing of individual units through a user interface; a print set value storage unit configured to store a print set value that is set by operation of an operation unit on a basic setting screen displayed on a display unit on which setting relating to the color printing is performed at a basic level and a print detail set value that is set by operation of the operation unit on a detail setting screen as another dialog on which the setting is performed at a detail level under operation control of the control unit; and a print data creating unit configured to create print data of the color printing based on the print set value and the print detail set value under operation control of the control unit.

Abstract: A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer.

Abstract: In a printer driver, combinations of standard print conditions and standard render data are saved as standard patterns, and combinations of standard print conditions and standard render data used for exceptional settings are saved as print application patterns. The print application patterns and the standard patterns are associated with each other. When printing document data, print condition data and render data are spooled by each page, the standard print conditions and the standard render data are compared, and a most similar standard pattern is detected. The print application pattern corresponding to the detected standard pattern is referred to, and print conditions are generated by combining standard print conditions and print conditions of the document data for each page. From the render data of the document data or from the standard render data, print data that can be processed by the printer is generated.

Abstract: A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.

Abstract: A solid-state image sensor comprising a photoelectric conversion portion, a MOS transistor, a first insulating layer, a second insulating layer whose refractive index is higher than that of the first insulating layer, and a light-guiding portion including a first portion and a second portion formed on the first portion, wherein an angle that the side face of the first portion makes with a plane parallel to a light-receiving face of the photoelectric conversion portion is smaller than an angle that a side face of the second portion makes with the parallel plane, and a boundary between the first portion and the second portion is positioned higher than an upper face of a gate electrode of the MOS transistor, and lower than a boundary between the first insulating layer and the second insulating layer.

Abstract: A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.

Abstract: In a printer driver, combinations of standard print conditions and standard render data are saved as standard patterns, and combinations of standard print conditions and standard render data used for exceptional settings are saved as print application patterns. The print application patterns and the standard patterns are associated with each other. When printing document data, print condition data and render data are spooled by each page, the standard print conditions and the standard render data are compared, and a most similar standard pattern is detected. The print application pattern corresponding to the detected standard pattern is referred to, and print conditions are generated by combining standard print conditions and print conditions of the document data for each page. From the render data of the document data or from the standard render data, print data that can be processed by the printer is generated.

Abstract: The present invention discloses a method including the steps of a) confirming the status of a path corresponding to each node apparatus in the ring network by using a predetermined control information that includes a function of adding/deleting a predetermined path on a physical layer, b) instructing each node apparatus to add/delete the predetermined path by using the predetermined control information when the status of the path corresponding to each node apparatus is confirmed to be normal, c) reporting completion of the addition/deletion of the predetermined path to each node apparatus by using the predetermined control information when the addition/deletion of the predetermined path is adequately performed by each node apparatus, and d) reporting the addition/deletion of the predetermined path to a ring application function included in the ring application of the data link layer when the completion of the addition/deletion of the predetermined path is adequately reported by each node apparatus.

Abstract: A through-hole forming method includes steps of forming a first impurity region (102a) around a region where a through-hole is to be formed in the first surface of a silicon substrate (101), the first impurity region (102) being higher in impurity concentration than the silicon substrate (101), forming a second impurity region (102b) at a position adjacent to the first impurity region (102a) in the depth direction of the silicon substrate (101), the second impurity region (102b) being higher in impurity concentration than the first impurity region (102a), forming an etch stop layer (103) on the first surface, forming an etch mask layer (104) having an opening on the second surface of the silicon substrate (101) opposite to the first surface, and etching the silicon substrate (101) until at least the etch stop layer (103) is exposed via the opening.

Abstract: A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.

Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

Abstract: In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.