Abstract: The present invention discloses a method including the steps of a) confirming the status of a path corresponding to each node apparatus in the ring network by using a predetermined control information that includes a function of adding/deleting a predetermined path on a physical layer, b) instructing each node apparatus to add/delete the predetermined path by using the predetermined control information when the status of the path corresponding to each node apparatus is confirmed to be normal, c) reporting completion of the addition/deletion of the predetermined path to each node apparatus by using the predetermined control information when the addition/deletion of the predetermined path is adequately performed by each node apparatus, and d) reporting the addition/deletion of the predetermined path to a ring application function included in the ring application of the data link layer when the completion of the addition/deletion of the predetermined path is adequately reported by each node apparatus.

Abstract: A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

Abstract: The invention provides a heat generating resistant element having a high durability and a high resistance suitable for constituting an electrothermal converting member in an ink jet head or an ink jet apparatus. There is employed, as the heat generating resistant element, a film constituted of Cr, Si and N, having a composition of Cr: 15 to 20 at. %, Si: 40 to 60 at. % and N: 20 to 45 at. %, which constitute 100 at. % or substantially 100 at. %.

Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

Abstract: A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

Abstract: To provide a heating resistor film having a sufficiently high durability to repetitive pulse applications, a recording head substrate including the heating resistor film, a recording head, and a recording apparatus. A heating resistor film that generates heat energy using currents flowing from a wire in a heat acting portion of a recording head substrate, is made of amorphous tantalum silicon nitride having a sheet resistance of 200 ?/? to 400 ?/?, and has a thickness of 30 nm to 80 nm.

Abstract: In a case where first wirings (wirings for a driving power supply (VH)) commonly connected to a plurality of electro-thermal converting elements and adapted to supply an electric power to the plurality of electro-thermal converting elements and second wirings (high voltage grounding wirings (GNDH)) for connecting source areas of respective switching elements to grounding potential are provided, resistance of the second wiring is selected to be smaller than resistance of the first wiring.

Abstract: A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.

Abstract: A method for producing a liquid discharge head provided with a discharge port for discharging liquid, a liquid flow path communicating with the discharge port, and a silicon substrate including a discharge energy generating element for generating energy for liquid discharge and a liquid supply aperture for supplying the liquid flow path with the liquid, the method comprising following steps of: forming an anisotropic etching stop layer in a portion wherein the liquid supply apertures is to be formed on the top side of the substrate; forming an insulation layer on the anisotropic etching stop layer; destructing the crystalline structure under the etching stop layer in the liquid supply aperture forming portion utilizing the insulation layer as a mask, forming, on the rear side of the substrate, an etching mask layer having an aperture corresponding to the liquid supply aperture forming portion on the top side, etching the substrate by anisotropic etching from the aperture until the area where the crystalline s

Abstract: A semiconductor device having a plurality of electrothermal conversion elements and a plurality of switching elements for flowing current through the electrothermal conversion elements, respectively formed on a semiconductor substrate of a first conductivity type, wherein each of the switching elements is an insulated gate field effect transistor including: a first semiconductor region of a second conductivity type opposite to the first conductivity type, the first semiconductor region being formed on a principal surface of the semiconductor substrate, a second semiconductor region of the first conductivity type for providing a channel region, the second semiconductor region being formed adjacent to the first semiconductor region, a source region of the second conductivity type formed in a surface layer of the second semiconductor region, a drain region of the second conductivity type formed in a surface layer of the first semiconductor region, and a gate electrode formed on a gate insulating film on the chan

Abstract: In order to provide a circuit substrate with a satisfactory step coverage by the protective layer and the anti-cavitation film in an edge portion of wirings and a liquid discharge head utilizing such circuit substrate, the invention provides a method for producing a circuit substrate provided, on an insulating surface of a substrate, with a plurality of elements each including a resistive layer and a pair of electrodes formed with a predetermined spacing on said resistive layer, including a step of forming an aluminum electrode wiring layer on the resistive layer, a step of isolating the electrode wiring layer by dry etching into each element, and a step of forming the electrode wiring into a tapered cross section with an etching solution containing phosphoric acid, nitric acid and a chelating agent capable of forming a complex with the wiring metal.

Abstract: A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.

Abstract: A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

Abstract: A structure having a base plate, such as silicon, provided with a through hole makes it possible to curtail the process numbers at the time of manufacture, while enhancing the reliability thereof. When the through hole is provided by anisotropic etching from the backside of the base plate, a silicon nitride film, which becomes membrane on the surface side of the base plate is formed so as not to allow etching solution from leaking to the surface side of the base plate. It is preferable to form the silicon nitride film using plasma CVD method to make the inner stress of the silicon nitride film a compression stress of 3×108 Pa or less.

Abstract: A circuit board for a liquid discharging apparatus in which coating performance of a protective layer and a cavitation resistive film on a heat generating element is excellent and durability is excellent and a manufacturing method of such a circuit board are provided. A surface portion of a wiring material layer is processed so that an etching speed of the surface portion is made higher than that of the material forming the wiring material layer. It is desirable to execute a process for forming at least one selected from a fluoride, a chloride, and a nitride of the material forming the wiring material layer into the surface portion of the wiring material layer.

Abstract: The invention provides a heat generating resistant element having a high durability and a high resistance suitable for constituting an electrothermal converting member in an ink jet head or an ink jet apparatus. There is employed, as the heat generating resistant element, a film constituted of Cr, Si and N, having a composition of Cr: 15 to 20 at. %, Si: 40 to 60 at. % and N: 20 to 45 at. %, which constitute 100 at.% or substantially 100 at. %.

Abstract: In a case where first wirings (wirings for a driving power supply (VH)) commonly connected to a plurality of electro-thermal converting elements and adapted to supply an electric power to the plurality of electro-thermal converting elements and second wirings (high voltage grounding wirings (GNDH)) for connecting source areas of respective switching elements to grounding potential are provided, resistance of the second wiring is selected to be smaller than resistance of the first wiring.

Abstract: A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

Abstract: A semiconductor device having a plurality of electrothermal conversion elements and a plurality of switching elements for flowing current through the electrothermal conversion elements, respectively formed on a semiconductor substrate of a first conductivity type, wherein each of the switching elements is an insulated gate field effect transistor including: a first semiconductor region of a second conductivity type opposite to the first conductivity type, the first semiconductor region being formed on a principal surface of the semiconductor substrate, a second semiconductor region of the first conductivity type for providing a channel region, the second semiconductor region being formed adjacent to the first semiconductor region, a source region of the second conductivity type formed in a surface layer of the second semiconductor region, a drain region of the second conductivity type formed in a surface layer of the first semiconductor region, and a gate electrode formed on a gate insulating film on the chan

Abstract: A structure having a base plate, such as silicon, provided with a through hole makes it possible to curtail the process numbers at the time of manufacture, while enhancing the reliability thereof. When the through hole is provided by anisotropic etching from the backside of the base plate, a silicon nitride film, which becomes membrane on the surface side of the base plate is formed so as not to allow etching solution from leaking to the surface side of the base plate. It is preferable to form the silicon nitride film using plasma CVD method to make the inner stress of the silicon nitride film a compression stress of 3×108 Pa or less.