Abstract: A structure is constructed with a through hole in a substrate of silicon or the like by the decreased number of steps in production and with improved reliability. A silicon nitride film 104 is formed in contact with an upper surface of a silicon oxide film 103 at least in a side portion of a through hole 120, thereby improving step coverage of the silicon nitride film 104. The silicon oxide film 103 and silicon nitride film 104 function as a membrane during formation of the through hole 120 by etching from the back side of substrate 100.

Abstract: To provide a heating resistor film having a sufficiently high durability to repetitive pulse applications, a recording head substrate including the heating resistor film, a recording head, and a recording apparatus. A heating resistor film that generates heat energy using currents flowing from a wire in a heat acting portion of a recording head substrate, is made of amorphous tantalum silicon nitride having a sheet resistance of 200 &OHgr;/□ to 400 &OHgr;/□, and has a thickness of 30 nm to 80 nm.

Abstract: A method for producing a liquid discharge head provided with a discharge port for discharging liquid, a liquid flow path communicating with the discharge port, and a silicon substrate including a discharge energy generating element for generating energy for liquid discharge and a liquid supply aperture for supplying the liquid flow path with the liquid, the method comprising following steps of: forming an anisotropic etching stop layer in a portion wherein the liquid supply apertures is to be formed on the top side of the substrate; forming an insulation layer on the anisotropic etching stop layer; destructing the crystalline structure under the etching stop layer in the liquid supply aperture forming portion utilizing the insulation layer as a mask, forming, on the rear side of the substrate, an etching mask layer having an aperture corresponding to the liquid supply aperture forming portion on the top side, etching the substrate by anisotropic etching from the aperture until the area where the crystalline s

Abstract: A method for forming a thin film on a substrate using a gas includes providing a substrate in a reaction chamber. A head for emitting a gas in the reaction chamber is disposed opposite the substrate. This step includes mounting a detachable gas liberating surface to the head so that the distance between the head and the substrate surface is 10 mm or less. Gas is then emitted from the head into the reaction chamber.

Abstract: To provide a substrate unit for liquid discharging head, a method for producing the same, a liquid discharging head, a cartridge, and an image forming apparatus. The substrate unit for liquid discharging head is for a head which gives thermal energy to the liquid for film boiling, to discharge droplets of the liquid from its discharge port.

Abstract: The present invention provides a semiconductor device having an inkjet recording capability and a method of making such a device. The present invention also provides an inkjet head to which an inkjet recording mode for producing an output of information including characters and images is applicable, a recording apparatus on which such a recording head can be fixed or detachably installed, and an information-processing system having such a recording apparatus as its output member. In particular, the present invention relates to an inkjet recording head of the side-shooter type that ejects a droplet of recording liquid perpendicularly on a surface thereof where a plurality of elements for generating ejection-energies to be used for ejecting ink is formed.

Abstract: In a semiconductor device in which a plurality of electro-thermal conversion elements and a plurality of switching devices for flowing electric currents through the plural electro-thermal conversion elements are integrated on a first conductive type semiconductor substrate, the switching devices are insulated gate type field effect transistors severally comprising: a second conductive type first semiconductor region formed on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region, the second semiconductor region being formed to adjoin the first semiconductor region; a second conductive type source region formed on the surface side of the second semiconductor region; a second conductive type drain region formed on the surface side of the first semiconductor region; and gate electrodes formed on the channel region with a gate insulator film put between them; and the second semiconductor region is formed by a semiconductor having a

Abstract: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Abstract: Transmission system and equipment therefore are disclosed, by which independent network implementation corresponding to individual communication interfaces can be avoided. A network is constituted by a plurality of transmission equipment connected thereto. Each transmission equipment provides an interface which accommodates a plurality of low-speed main signal transmission lines respectively to transmit a main signal to the network according to the preset cross-connection, or to transmit, in the opposite direction, a main signal received from the network to the plurality of low-speed main signal transmission lines. The transmission equipment also provides an interface processor for converting formats corresponding to the main signal interfaces to a format commonly defined within the network.

Abstract: The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

Abstract: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Abstract: A chemical vapor deposition apparatus comprises a starting material container holding a starting material in a liquid state, a starting gas generating container into which the liquid starting material is fed from the starting material container, a means for keeping constant the liquid level of the liquid starting material held in the starting gas generating container, a means for injecting a bubbling gas from the outside into the liquid starting material held in the starting gas generating container, thereby bubbling the starting gas, and a reaction chamber into which a mixed gas of the starting gas and the bubbling gas are fed.

Abstract: An apparatus for forming metal film for forming metal films on substrates comprises a reaction chamber, a plurality of first and second electrodes alternately arranged in the reaction chamber, an energy supply means that supplies to the first and second electrodes an electrical energy for generating plasma, a heating means for heating a plurality of substrates disposed between the first and second electrodes, and a gas feed means that feeds into the reaction chamber a starting material gas for forming metal films; the plasma is generated across the first and second electrodes to form metal films on the plurality of substrates.The apparatus can form metal films at a high throughput at one time process, and at a low cost.

Abstract: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Abstract: A starting gas feeding apparatus for forming a gaseous starting material from a liquid starting material and feeding the gaseous starting material into a reaction chamber of a CVD apparatus, comprises; a container that holds the liquid starting material, pressure reducing means for reducing the pressure inside the container, and heating means for heating the liquid starting material held in the container; the liquid starting material being boiled.

Abstract: A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.