Abstract: Disclosed is a defect inspection method which makes it possible to scan the entire surface of a sample and detect minute defects without causing thermal damage to the sample. A defect inspection method in which a pulse laser emitted from a light source is subjected to pulse division and irradiated on the surface of a sample which moves in one direction while the divided-pulse pulse laser is rotated, reflection light from the sample irradiated by the divided-pulse pulse laser is detected, the signal of the detected reflection light is processed to detect defects on the sample, and information regarding a detected defect is output to a display screen, wherein the barycentric position of the light intensity of the divided-pulse pulse laser is monitored and adjusted.

Abstract: In a defect inspection apparatus for inspecting a wafer provided with a circuit pattern for defects, the illuminating direction of illuminating light rays is selectively determined such that an area containing a defect that scatters light of high intensity coincides with the aperture of a dark-field detecting system, and such that regularly reflected light regularly reflected by a pattern, which is noise to defect detection, does not coincide with the aperture of the dark field detecting system.

Abstract: To provide a defect inspection apparatus for inspecting defects of a specimen without lowering resolution of a lens, without depending on a polarization characteristic of a defect scattered light, and with high detection sensitivity that is realized by the following. A detection optical path is branched by at least one of spectral splitting and polarization splitting, a spatial filter in the form of a two-dimensional array is disposed after the branch, and only diffracted light is shielded by the spatial filter in the form of a two-dimensional array.

Abstract: The present invention relates to a defect inspection device which includes: irradiating means for simultaneously irradiating different regions on a sample with illumination light under different optical conditions, the sample being predesigned to include patterns repeatedly formed thereupon, wherein the patterns are to be formed in the same shape; detection means for detecting, for each of the different regions, a beam of light reflected from each region irradiated with the illumination light; defect candidate extraction means for extracting defect candidates under the different optical conditions for each of the different regions, by processing detection signals corresponding to the reflected light which is detected; defect extraction means for extracting defects by integrating the defect candidates extracted under the different optical conditions; and defect classifying means for calculating feature quantities of the extracted defects and classifies the defects according to the calculated feature quantities

Abstract: A cleaning system includes: a sulfuric acid electrolytic portion configured to electrolyze a sulfuric acid solution to generate an oxidizing substance in an anode chamber, a concentrated sulfuric acid supply portion configured to supply a concentrated sulfuric acid solution to the anode chamber, and a cleaning treatment portion configured to carry out cleaning treatment of an object to be cleaned using an oxidizing solution comprising the oxidizing substance. The sulfuric acid electrolytic portion has an anode, a cathode, a diaphragm which is provided between the anode and the cathode, the anode chamber which is demarcated between the anode and the diaphragm and a cathode chamber which is demarcated between the cathode and the diaphragm.

Abstract: To provide a defect inspection apparatus for inspecting defects of a specimen without lowering resolution of a lens, without depending on a polarization characteristic of a defect scattered light, and with high detection sensitivity that is realized by the following. A detection optical path is branched by at least one of spectral splitting and polarization splitting, a spatial filter in the form of a two-dimensional array is disposed after the branch, and only diffracted light is shielded by the spatial filter in the form of a two-dimensional array.

Abstract: An apparatus for electrolyzing sulfuric acid, the apparatus comprising an electrolytic cell comprising a cathode chamber having a cathode and an anode chamber having an anode, the cathode chamber and the anode chamber being separated by a diaphragm, a sulfuric acid tank configured to store the sulfuric acid, a supply pipe connecting the sulfuric acid tank to an inlet port of the anode chamber, a connection pipe connecting an outlet port of the cathode chamber to the inlet port of the anode chamber, a first supply pump provided on the supply pipe and configured to supply the sulfuric acid from the sulfuric acid tank to the cathode chamber through the supply pipe, and a drain pipe connected to an outlet port of the anode chamber and configured to supply to a solution tank a solution containing an oxidizing agent generated by electrolysis in the anode chamber.

Abstract: A defect inspection apparatus includes an illumination optical system, a detection optical system which includes a reflecting objective lens, and wavelength separation optics for conducting wavelength separation, and after the wavelength separation, branching the scattered light into at least a first detection optical path and a second detection optical path. The detection optical system further includes, on the first detection optical path, a first sensor, and on the second detection optical path, a second sensor. A signal processor is provided which, in accordance with at least one of a first signal obtained from the first sensor and a second signal obtained from the second sensor, discriminates defects or defect candidates present on a surface of a sample.

Abstract: To provide a defect inspection apparatus for inspecting defects of a specimen without lowering resolution of a lens, without depending on a polarization characteristic of a defect scattered light, and with high detection sensitivity that is realized by the following. A detection optical path is branched by at least one of spectral splitting and polarization splitting, a spatial filter in the form of a two-dimensional array is disposed after the branch, and only diffracted light is shielded by the spatial filter in the form of a two-dimensional array.

Abstract: An inspection method, including: illuminating a light on a wafer on which plural chips having identical patterns are formed; imaging corresponding areas of two chips formed on the wafer to obtain inspection images and reference images with an image sensor; and processing the obtained inspection image and the reference image to produce a difference image which indicates a difference between the inspection image and the reference image and detect a defect by comparing the difference image with a threshold, wherein a threshold applied to a difference image which is produced by comparing the inspection image and the reference image obtained by imaging peripheral portion of the wafer is different from a threshold applied to a difference image which is produced by comparing the inspection image and the reference image obtained by imaging central portion of the wafer.

Abstract: A method of inspecting defects and a device inspecting defects of detecting defects at high sensitivity and high capture efficiency even on various patterns existing on a wafer. In the device of inspecting defects, an illumination optical system is formed of two systems of a coherent illumination of a laser 5 and an incoherent illumination of LEDs 6a, 6b, 6c and 6d, and light paths are divided in a detecting system corresponding to respective illumination light, spatial modulation elements 55a and 55b are arranged to detecting light paths, respectively, scattered light inhibiting sensitivity is shielded by the spatial modulating elements 55a and 55b, scattered light transmitted through the spatial modulation elements 55a and 55b is detected by image sensors 90a and 90b arranged to respective light paths, and images detected by these two image sensors 90a and 90b are subjected to a comparison processing, thereby determining a defect candidate.

Abstract: To effectively utilize the polarization property of an inspection subject for obtaining higher inspection sensitivity, for the polarization of lighting, it is necessary to observe differences in the reflection, diffraction, and scattered light from the inspection subject because of polarization by applying light having the same elevation angle and wavelength in the same direction but different polarization. According to conventional techniques, a plurality of measurements by changing polarizations is required to cause a prolonged inspection time period that is an important specification of inspection apparatuses.

Abstract: A two-dimensional sensor is installed inclining at a predetermined angle to a moving direction of a stage on which an object to be inspected is mounted and, in synchronism with the movement of the stage, a picked up image is rearranged so that there can be obtained an image in high-density sampling with a picture-element size or less of the two-dimensional sensor with respect to a wafer. Thus, interpolation calculation during position alignment becomes unnecessary, and size calculation and classification of a defect can be performed with high accuracy.

Abstract: Arrangements for inspecting a specimen on which plural patterns are formed; capturing a first image of a first area; capturing a second image of a second area in which patterns which are essentially the same with the patterns formed in the first area; creating data relating to corresponding pixels of the first and second images, for each pixel; determining a threshold for each pixel for detecting defects directly in accordance with the first and second images; and detecting defects on the specimen by processing the first and second images by using the threshold for each pixel and information of a scattered diagram of brightness of the first and second images, wherein the threshold is determined by using information of brightness of a local region of at least one of the first and second images, with the local region including an aimed pixel and peripheral pixels of the aimed pixel.

Abstract: A polyelectrolyte material includes as a main chain: a benzene ring; an ether; and a carbonyl group. A part of the benzene ring is sulfonated. A method for manufacturing a polyelectrolyte material includes: synthesizing disulfonyl difluorobenzophenone; and polymerizing the disulfonyl difluorobenzophenone, 4,4?-difluorobenzophenone, and phenolphthalein with a crown ether as a catalyst. The synthesizing is performed by reacting 4,4?-difluorobenzophenone with fuming sulfuric acid, performing salting-out the reaction product, and recrystallizing the salting-out product.

Abstract: The present invention provides a spatial filtering technology for exposing a defect image independently of polarization properties of defect scattered light, a defect inspection method for increasing a defect capture rate by suppressing the brightness saturation of a normal pattern, and a defect inspection apparatus that uses the defect inspection method. An array of spatial filters is disposed in one or more optical paths, which are obtained by polarizing and splitting a detection optical path, to filter diffracted light and scattered light emitted from the normal pattern. An image whose brightness saturation is suppressed is obtained by controlling an illumination light amount and/or detection efficiency during image detection in accordance with the amount of scattered light from the normal pattern.

Abstract: A defect inspection apparatus includes an illumination optical system, a detection optical system which includes a reflecting objective lens, and wavelength separation optics for conducting wavelength separation, and after the wavelength separation, branching the scattered light into at least a first detection optical path and a second detection optical path. The detection optical system further includes, on the first detection optical path, a first sensor, and on the second detection optical path, a second sensor. A signal processor is provided which, in accordance with at least one of a first signal obtained from the first sensor and a second signal obtained from the second sensor, discriminates defects or defect candidates present on a surface of a sample.

Abstract: By including an illumination system and a detection system, an information collecting function of monitoring an environment, such as temperature and atmospheric pressure, and an apparatus state managing function having a feedback function of comparing the monitoring result and a design value, a theoretical calculation value or an ideal value derived from simulation results and calibrating an apparatus so that the monitoring result is brought close to the ideal value, a unit for keeping the apparatus state and apparatus sensitivity constant is provided. A control unit 800 is configured to include a recording unit 801, a comparing unit 802, a sensitivity predicting unit 803, and a feedback control unit 804. In the comparing unit 802, the monitoring result transmitted from the recording unit 801 and an ideal value stored in a database 805 are compared with each other.

Abstract: A defect inspection apparatus and method includes a darkfield illumination optical system which conducts darkfield illumination upon the surface of a sample with irradiation light having at least one of wavelength band, a darkfield detection optical system which includes a reflecting objective lens for converging the light scattered from the surface of the sample that has been darkfield-illuminated with the irradiation light having the at least one wavelength band, and imaging optics for imaging onto a light-receiving surface of an image sensor the scattered light that the reflecting objective lens has converged, and an image processor which, in accordance with an image signal obtained from the image sensor of the darkfield detection optical system, discriminates defects or defect candidates present on the surface of the sample.

Abstract: Arrangements for inspecting a specimen on which plural patterns are formed; capturing a first image of a first area; capturing a second image of a second area in which patterns which are essentially the same with the patterns formed in the first area; creating data relating to corresponding pixels of the first and second images, for each pixel; determining a threshold for each pixel for detecting defects directly in accordance with the first and second images; and detecting defects on the specimen by processing the first and second images by using the threshold for each pixel and information of a scattered diagram of brightness of the first and second images, wherein the threshold is determined by using information of brightness of a local region of at least one of the first and second images, with the local region including an aimed pixel and peripheral pixels of the aimed pixel.