Patents by Inventor Yukinao Kaga
Yukinao Kaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20180350638Abstract: Described herein is a technique capable of improving the controllability of a thickness of a film formed on a large surface area substrate having a surface area greater than a surface area of a bare substrate and improving the thickness uniformity between films formed on a plurality of large surface area substrates accommodated in a substrate loading region by reducing the influence of the surface area of the large surface area substrate and the number of the large surface area substrates due to a loading effect even when the plurality of large surface area substrates are batch-processed using a batch type processing furnace.Type: ApplicationFiled: August 9, 2018Publication date: December 6, 2018Inventors: Yukinao KAGA, Ryosuke YOSHIDA
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Publication number: 20180247819Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers).Type: ApplicationFiled: April 24, 2018Publication date: August 30, 2018Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Arito OGAWA, Kazuhiro HARADA, Yukinao KAGA, Hideharu ITATANI, Hiroshi ASHIHARA
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Patent number: 9972500Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.Type: GrantFiled: October 26, 2016Date of Patent: May 15, 2018Assignee: Hitachi Kokusai Electric, Inc.Inventors: Yukinao Kaga, Arito Ogawa, Atsuro Seino, Atsuhiko Ashitani, Ryohei Maeno, Masanori Sakai
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Publication number: 20170287716Abstract: A method of manufacturing a semiconductor device, includes rotating a substrate support tool accommodated in a process chamber and configured to support a substrate with a rail, and supplying a process gas including a first gas to the substrate from a first gas supply hole positioned at an outer side of the substrate in a horizontal direction while rotating the substrate support tool. In the act of supplying the process gas, the first gas is supplied to the substrate in a first period in which the rail is not positioned between the first gas supply hole and the substrate in the horizontal direction.Type: ApplicationFiled: June 15, 2017Publication date: October 5, 2017Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventor: Yukinao KAGA
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Patent number: 9650715Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.Type: GrantFiled: April 27, 2015Date of Patent: May 16, 2017Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yukinao Kaga, Tatsuyuki Saito, Masanori Sakai, Takashi Yokogawa
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Publication number: 20170047227Abstract: The present invention is provided to improve quality or manufacturing throughput of a semiconductor device. A method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.Type: ApplicationFiled: October 26, 2016Publication date: February 16, 2017Inventors: Yukinao KAGA, Arito OGAWA, Atsuro SEINO, Atsuhiko ASHITANI, Ryohei MAENO, Masanori SAKAI
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Patent number: 9508555Abstract: To improve quality or manufacturing throughput of a semiconductor device, a method includes supplying a source gas to a substrate in a process chamber; exhausting an inside of the process chamber; supplying a reaction gas to the substrate; and exhausting the inside of the process chamber, wherein the source gas and/or the reaction gas is supplied in temporally separated pulses in the supply of the source gas and/or in the supply of the reaction gas. Then, the source gas and/or the reaction gas is supplied in temporally separated pulses to form a film during a gas supply time determined by a concentration distribution of by-products formed on a surface of the substrate.Type: GrantFiled: March 26, 2014Date of Patent: November 29, 2016Assignee: Hitachi Kokusai Electric, Inc.Inventors: Yukinao Kaga, Arito Ogawa, Atsuro Seino, Atsuhiko Ashitani, Ryohei Maeno, Masanori Sakai
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Patent number: 9472398Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.Type: GrantFiled: May 28, 2015Date of Patent: October 18, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
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Patent number: 9466477Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.Type: GrantFiled: August 3, 2010Date of Patent: October 11, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
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Patent number: 9416446Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.Type: GrantFiled: October 5, 2015Date of Patent: August 16, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
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Publication number: 20160196978Abstract: A method for manufacturing a semiconductor device, including: forming a metal carbide film including a first metal element and a second metal element on a substrate, by time-divisionally performing, supplying a first precursor gas containing the first metal element and not containing carbon to the substrate, supplying a second precursor gas containing the second metal element differing from the first metal element and not containing carbon to the substrate, and supplying a reaction gas containing carbon to the substrate.Type: ApplicationFiled: March 11, 2016Publication date: July 7, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yukinao KAGA, Arito OGAWA
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Patent number: 9340873Abstract: Provided is a semiconductor device manufacturing method including: (a) supplying a source gas containing a first element and chlorine to a substrate accommodated in a processing chamber to form an adsorption layer of the source gas on the substrate; (b) supplying a chlorine-containing gas having a composition different from that of the source gas to the substrate while supplying the sources gas before an adsorption of the source gas to the substrate is saturated to suppress the adsorption of the source gas to the substrate; (c) removing the source gas and the chlorine-containing gas remaining on the substrate; (d) supplying a modifying gas including a second element to the substrate to form a layer including the first element and the second element on the substrate by modifying the adsorption layer of the source gas; and (e) removing the modifying gas remaining on the substrate.Type: GrantFiled: April 7, 2015Date of Patent: May 17, 2016Assignee: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
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Patent number: 9263269Abstract: Provided are a reaction tube, a substrate processing apparatus, and a method of manufacturing a semiconductor device capable of suppressing a non-uniform distribution of a gas in a top region to improve the flow of the gas and film uniformity within and between substrate surfaces. The reaction tube has a cylindrical shape, accommodates a plurality of substrates stacked therein, and includes a cylindrical portion and a ceiling portion covering an upper end portion of the cylindrical portion, the ceiling portion having a substantially flat top inner surface. A thickness of a sidewall of the ceiling portion is greater than that of a sidewall of the cylindrical portion.Type: GrantFiled: September 12, 2013Date of Patent: February 16, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Satoshi Okada, Kosuke Takagi, Yukinao Kaga
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Publication number: 20160024649Abstract: Provided is a semiconductor device manufacturing method of forming a film of less than one atomic layer on a substrate. The method includes (a) supplying a source gas into a processing chamber accommodating the substrate to adsorb the source gas on the substrate; (b) supplying a reactive gas different from the source gas into the processing chamber to cause a reaction of the reactive gas with the source gas adsorbed on the substrate before the source gas is saturatively adsorbed on the substrate; (c) removing an inner atmosphere of the processing chamber; and (d) supplying a modifying gas into the processing chamber to modify the source gas adsorbed on the substrate.Type: ApplicationFiled: October 5, 2015Publication date: January 28, 2016Inventors: Tatsuyuki SAITO, Masanori SAKAI, Yukinao KAGA, Takashi YOKOGAWA
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Patent number: 9238257Abstract: It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.Type: GrantFiled: August 24, 2010Date of Patent: January 19, 2016Assignee: Hitachi Kokusai Electric Inc.Inventors: Masanori Sakai, Yukinao Kaga, Takashi Yokogawa, Tatsuyuki Saito
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Publication number: 20150325447Abstract: Provided is a technique of adjusting a work function. A method of manufacturing a semiconductor device includes forming a film having a predetermined thickness and containing a first metal element, carbon and nitrogen on a substrate by: (a) forming a first layer containing the first metal element and carbon by supplying a metal-containing gas containing the first metal element and a carbon-containing gas to the substrate M times and (b) forming a second layer containing the first metal element, carbon and nitrogen by supplying a nitrogen-containing gas to the substrate having the first layer formed thereon N times to nitride the first layer, wherein M and N are selected in a manner that a work function of the film has a predetermined value (where M and N are natural numbers).Type: ApplicationFiled: July 17, 2015Publication date: November 12, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Arito OGAWA, Kazuhiro HARADA, Yukinao KAGA, Hideharu ITATANI, Hiroshi ASHIHARA
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Publication number: 20150262816Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.Type: ApplicationFiled: May 28, 2015Publication date: September 17, 2015Inventors: Tatsuyuki SAITO, Masanori SAKAI, Yukinao KAGA, Takashi YOKOGAWA
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Publication number: 20150225852Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. The method comprises: (a) supplying a metal-containing gas simultaneously with one selected from the group consisting of an oxygen-containing gas, a halogen-containing gas and combinations thereof into a processing chamber accommodating the substrate; and (b) supplying a nitrogen-containing gas with one of the oxygen-containing gas, the halogen-containing gas and the combinations thereof into the processing chamber.Type: ApplicationFiled: April 27, 2015Publication date: August 13, 2015Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Yukinao KAGA, Tatsuyuki SAITO, Masanori SAKAI, Takashi YOKOGAWA
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Publication number: 20150214045Abstract: Provided is a semiconductor device manufacturing method including: (a) supplying a source gas containing a first element and chlorine to a substrate accommodated in a processing chamber to form an adsorption layer of the source gas on the substrate; (b) supplying a chlorine-containing gas having a composition different from that of the source gas to the substrate while supplying the sources gas before an adsorption of the source gas to the substrate is saturated to suppress the adsorption of the source gas to the substrate; (c) removing the source gas and the chlorine-containing gas remaining on the substrate; (d) supplying a modifying gas including a second element to the substrate to form a layer including the first element and the second element on the substrate by modifying the adsorption layer of the source gas; and (e) removing the modifying gas remaining on the substrate.Type: ApplicationFiled: April 7, 2015Publication date: July 30, 2015Applicant: Hitachi Kokusai Electric Inc.Inventors: Tatsuyuki Saito, Masanori Sakai, Yukinao Kaga, Takashi Yokogawa
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Patent number: 9045825Abstract: Provided are a semiconductor device manufacturing method and a substrate processing apparatus that are capable of increasing a work function of a film to be formed, in comparison with a related art. A cycle including (a) supplying a metal-containing gas into a processing chamber where a substrate is accommodated (b) supplying a nitrogen-containing gas into the processing chamber; and (c) supplying one of an oxygen-containing gas, a halogen-containing gas and a combination thereof into the processing chamber, is performed a plurality of times to form a metal-containing film on the substrate.Type: GrantFiled: February 16, 2012Date of Patent: June 2, 2015Assignee: Hitachi Kokusai Electric Inc.Inventors: Yukinao Kaga, Tatsuyuki Saito, Masanori Sakai, Takashi Yokogawa