Patents by Inventor Yukinao Kaga

Yukinao Kaga has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110183519
    Abstract: A method of manufacturing a semiconductor device and a substrate processing apparatus capable of providing a TiN film that is higher in quality than a TiN film formed by a conventional CVD method at a higher film-forming rate, that is, with a higher productivity than a TiN film formed by an ALD method.
    Type: Application
    Filed: January 24, 2011
    Publication date: July 28, 2011
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yukinao KAGA, Tatsuyuki SAITO, Masanori SAKAI, Takashi YOKOGAWA
  • Publication number: 20110059600
    Abstract: It is possible to efficiently remove deposited materials such as a conductive film or insulting film adhered to parts such as the inner wall of a processing chamber and a substrate supporting tool disposed in the processing chamber. There is provided a method of manufacturing a semiconductor device. The method comprises: loading a substrate into a processing chamber; forming a conductive film or an insulating film on the substrate by supplying a plurality of source gases into the processing chamber; unloading the substrate from the processing chamber; and modifying a conductive film or an insulating film adhered to the processing chamber by supplying a modifying gas into the processing chamber. After performing a cycle of the loading, the forming, the unloading, and the modifying processes a plurality of times, the modified conductive film or the modified insulating film adhered to the processing chamber is removed from the processing chamber by supplying a cleaning gas into the processing chamber.
    Type: Application
    Filed: August 24, 2010
    Publication date: March 10, 2011
    Applicant: HITACHI-KOKUSAI ELECTRIC INC.
    Inventors: Masanori SAKAI, Yukinao KAGA, Takashi YOKOGAWA, Tatsuyuki SAITO
  • Publication number: 20110031593
    Abstract: There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid formation of a conductive film, which has a low concentration of impurities permeated from a source owing to its dense structure, and a low resistivity. The method is performed by simultaneously supplying two or more kinds of sources into a processing chamber to form a film on a substrate placed in the processing chamber. The method comprises: performing a first source supply process by supplying at least one kind of source into the processing chamber at a first supply flow rate; and performing a second source supply process by supplying the at least one kind of source into the processing chamber at a second supply flow rate different from the first supply flow rate.
    Type: Application
    Filed: August 3, 2010
    Publication date: February 10, 2011
    Applicant: HITACHI KOKUSAI ELECTRIC, INC.
    Inventors: Tatsuyuki SAITO, Masanori SAKAI, Yukinao KAGA, Takashi Yokogawa
  • Publication number: 20100297846
    Abstract: A method of manufacturing a semiconductor device includes the steps of: forming a first metal film on the substrate placed in a processing chamber by alternately supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber more than once; forming a second metal film on the substrate by simultaneously supplying at least one type of a metal compound that is an inorganic raw material and a reactant gas that has reactivity to the metal compound to the processing chamber once so that the metal compound and the reactant gas are mixed with each other; and modifying at least one of the first metal film and the second metal film is modified using at least one of the reactant gas and an inert gas after at least one of the alternate supply process and the simultaneous supply process.
    Type: Application
    Filed: May 20, 2010
    Publication date: November 25, 2010
    Applicant: HITACHI KOKUSAI ELECTRIC INC.
    Inventors: Yukinao Kaga, Tatsuyuki Saito, Masanori Sakai