Patents by Inventor Yukio Nishida

Yukio Nishida has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200066743
    Abstract: A semiconductor memory device includes: a semiconductor substrate; a memory cell array provided in a first region; a first transistor provided in a second region; a second transistor provided in a third region; and an insulative laminated film. The first and second transistors each include a semiconductor layer, a gate electrode, and a gate insulating film. A concentration of boron (B) in the gate electrode of the second transistor is higher than that of the first transistor. The insulative laminated film includes a first insulating film contacting the surface of the semiconductor substrate, and a second insulating film having a smaller diffusion coefficient of hydrogen (H) than that of the first insulating film. The second insulating film has a first portion contacting the semiconductor portion, and the first portion surrounds the third region.
    Type: Application
    Filed: February 11, 2019
    Publication date: February 27, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Tetsuya FURUKAWA, Tomoaki SHINO, Mitsuhiro NOGUCHI, Shinichi WATANABE, Yukio NISHIDA, Hiroyasu TANAKA
  • Patent number: 10371421
    Abstract: The oil level in a compressor is lowered upon activation of the compressor. A heat pump-type heating device of the present invention includes: a refrigerant circuit in which a compressor, a heat-source-side heat exchanger, a motor-operated valve, and a target-side heat exchanger are provided; and an outdoor fan which is provided for the heat-source-side heat exchanger. The target-side heat exchanger is capable of heating, by a refrigerant, fluid supplied from outside. The rotation number of the outdoor fan upon activation of the compressor when a difference between a temperature of the fluid supplied to the target-side heat exchanger and an outside temperature is equal to or larger than a predetermined temperature difference is smaller than the rotation number when the difference is smaller than the predetermined temperature difference.
    Type: Grant
    Filed: October 17, 2016
    Date of Patent: August 6, 2019
    Assignee: Daikin Industries, Ltd.
    Inventors: Teruo Nishida, Shinji Yoshikawa, Yukio Matsusaka
  • Patent number: 10287818
    Abstract: A shade (10) includes slats (20) that are arranged in an up and down direction. One or more slat(s) (21) forming a part of the slats, which is located above in the up and down direction, includes a transparent portion that enables visible light to transmit through the slat. A traveling direction of light transmitting through the transparent portion is bent.
    Type: Grant
    Filed: April 16, 2014
    Date of Patent: May 14, 2019
    Assignee: Dai Nippon Printing Co., Ltd.
    Inventors: Tomonori Nishida, Norihisa Moriya, Yukio Taniguchi, Satoshi Mitsuzuka, Masayuki Sekido
  • Patent number: 9842766
    Abstract: A semiconductor device according to an embodiment, includes a plurality of wires, a first dielectric film, and a second dielectric film. The plurality of wires are arranged above a semiconductor substrate so as to extend in a first direction and aligned via a first cavity. The first dielectric film has a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the first cavity. The second dielectric film is formed above the first dielectric film so as to cover the second cavity.
    Type: Grant
    Filed: January 28, 2015
    Date of Patent: December 12, 2017
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Masato Endo, Kazunori Masuda, Yukio Nishida, Naoya Kami, Yuuichi Tatsumi, Naoyuki Kondo
  • Patent number: 9780232
    Abstract: To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film.
    Type: Grant
    Filed: February 19, 2016
    Date of Patent: October 3, 2017
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yukio Nishida, Tomohiro Yamashita
  • Publication number: 20170193204
    Abstract: Provided are a content control device, a control method therefor, and a program, with which the usage of digital content can be controlled appropriately. This content control device 100 is equipped with: a storage unit 102 that stores, for each content, the provided count (which is an instance count of the content being provided at a given point in time), and the providable count of the content; a provision determination unit 104 that, based on the provided count and the providable count, determines whether object content can be provided to a candidate device that receives the provided object content; and a provision count management unit 106 that, when the object content is provided to the candidate device 12 in accordance with the determination result from the provision determination unit 104, adds the provided count stored in relation to the object content.
    Type: Application
    Filed: May 18, 2015
    Publication date: July 6, 2017
    Inventors: Yukio NISHIDA, Noriyoshi HIROI
  • Publication number: 20170195881
    Abstract: In order to enable a user's portable terminal to be authenticated by a method which is easy for the user, a control device of this information processing system uses terminal information transmitted from a portable terminal and containing a first identifier to generate a second identifier, which is returned to the portable terminal. The portable terminal presents the obtained second identifier in a visual manner. When the control device detects, on the basis of a photographic image from an imaging device which photographs a predetermined imaging area, that the generated second identifier has been presented visually by the portable terminal, the control device authenticates that portable terminal.
    Type: Application
    Filed: May 18, 2015
    Publication date: July 6, 2017
    Inventors: Yukio NISHIDA, Noriyoshi HIROI
  • Publication number: 20170038912
    Abstract: An information providing device (100) includes: a display processing unit (101) that causes each of plural pieces of different specific content corresponding to plural information content groups to be displayed on a display unit or a projection surface while switching the pieces of specific content over time; a detection unit (102) that detects a predetermined operation of a user; and a provision unit (103) that recognizes piece of specific content which is a target of the detected predetermined operation and provides an operation interface for the user relating to an information content group corresponding to the recognized piece of specific content.
    Type: Application
    Filed: March 4, 2015
    Publication date: February 9, 2017
    Applicants: NEC Solution Innovators, Ltd., NEC Corporation
    Inventors: Yukio NISHIDA, Tomoko SENDAI, Noriyoshi HIROI
  • Publication number: 20170032349
    Abstract: An information processing apparatus (100) includes a symbol detection unit (101) that detects an identification symbol included in an object based on sensor information, and an association unit (102) that associates, in accordance with a positional relationship between a commodity or a commodity symbol corresponding to the commodity and the object including the detected identification symbol, identification information obtained using the detected identification symbol with information on the commodity.
    Type: Application
    Filed: March 4, 2015
    Publication date: February 2, 2017
    Applicants: NEC Solution Innovators, Ltd., NEC Corporation
    Inventors: Yukio NISHIDA, Tomoko SENDAI, Noriyoshi HIROI
  • Patent number: 9379150
    Abstract: The present invention improves the performance of an image sensor. In a planar view, fluorine is introduced into a part overlapping with a channel region in a gate electrode GE1 of an amplification transistor and is not introduced into the interior of a semiconductor substrate 1S. Concretely as shown in FIG. 20, a resist film FR1 is patterned in the manner of opening the part planarly overlapping with the channel region in the gate electrode GE1. Then fluorine is injected into the interior of the gate electrode GE1 exposed from an opening OP1 by an ion implantation method using the resist film FR1 in which the opening OP1 is formed as a mask.
    Type: Grant
    Filed: October 25, 2014
    Date of Patent: June 28, 2016
    Assignee: Renesas Electronics Corporation
    Inventors: Yukio Nishida, Tomohiro Yamashita, Yuki Yamamoto
  • Publication number: 20160172509
    Abstract: To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film.
    Type: Application
    Filed: February 19, 2016
    Publication date: June 16, 2016
    Inventors: Yukio NISHIDA, Tomohiro YAMASHITA
  • Publication number: 20160099286
    Abstract: The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that has a gate length larger than that of the gate electrode part.
    Type: Application
    Filed: December 15, 2015
    Publication date: April 7, 2016
    Inventors: Yuki YAMAMOTO, Yukio NISHIDA, Tomohiro YAMASHITA
  • Patent number: 9299854
    Abstract: To enhance the performance of a semiconductor device. In a method for manufacturing a semiconductor device, a metal film is formed over a semiconductor substrate having an insulating film formed on a surface thereof, and then the metal film is removed in a memory cell region, whereas, in a part of a peripheral circuit region, the metal film is left. Next, a silicon film is formed over the semiconductor substrate, then the silicon film is patterned in the memory cell region, and, in the peripheral circuit region, the silicon film is left so that an outer peripheral portion of the remaining metal film is covered with the silicon film. Subsequently, in the peripheral circuit region, the silicon film, the metal film, and the insulating film are patterned for forming an insulating film portion formed of the insulating film, a metal film portion formed of the metal film, and a conductive film portion formed of the silicon film.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: March 29, 2016
    Assignee: RENESAS ELECTRONICS CORPORATION
    Inventors: Yukio Nishida, Tomohiro Yamashita
  • Publication number: 20160078940
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes first word lines equipped with flag-like portions on one side of the block in the row direction and equipped with no flag-like portions on the other side of the block in the row direction, and second word lines equipped with no flag-like portions on the one side of the block in the row direction and equipped with flag-like portions on the other side of the block in the row direction.
    Type: Application
    Filed: February 6, 2015
    Publication date: March 17, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Naoya KAMI, Kazunori Masuda, Yuuichi Tatsumi, Naoyuki Kondo, Masato Endo, Yukio Nishida
  • Patent number: 9287259
    Abstract: MISFETs after the 32 nm technology node have a High-k gate insulating film and a metal gate electrode. Such MISFETs have the problem that the absolute value of the threshold voltage of n-MISFET and p-MISFET inevitably increases by the subsequent high temperature heat treatment. The threshold voltage is therefore controlled by forming various threshold voltage adjusting metal films on a High-k gate insulating film and introducing a film component from them into the High-k gate insulating film. The present inventors have however revealed that lanthanum or the like introduced into the High-k gate insulating film of the n-MISFET is likely to transfer to the STI region by the subsequent heat treatment. The semiconductor integrated circuit device according to the present invention is provided with an N channel threshold voltage adjusting element outward diffusion preventing region in the surface portion of the element isolation region below and at the periphery of the gate stack of the n-MISFET.
    Type: Grant
    Filed: April 9, 2012
    Date of Patent: March 15, 2016
    Assignee: Renesas Electronics Corporation
    Inventors: Hirofumi Shinohara, Yukio Nishida, Katsuyuki Horita, Tomohiro Yamashita, Hidekazu Oda
  • Publication number: 20160056067
    Abstract: A semiconductor device according to an embodiment, includes a plurality of wires, a first dielectric film, and a second dielectric film. The plurality of wires are arranged above a semiconductor substrate so as to extend in a first direction and aligned via a first cavity. The first dielectric film has a plurality of portions arranged above the plurality of wires so as to extend in a second direction substantially perpendicular to the plurality of wires and aligned along the first direction via a second cavity leading to the first cavity. The second dielectric film is formed above the first dielectric film so as to cover the second cavity.
    Type: Application
    Filed: January 28, 2015
    Publication date: February 25, 2016
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Masato ENDO, Kazunori Masuda, Yukio Nishida, Naoya Kami, Yuuichi Tatsumi, Naoyuki Kondo
  • Publication number: 20160052364
    Abstract: In a vehicular air conditioner in which heat of recirculated air inputted by an indoor air blower, is exchanged by an indoor heat exchanger so as to be retransmitted to a vehicle, there are provided with a cyclone fan, which aspirates heavy fresh outside air including snow or the like, so as to mix the outside air with the recirculated air inputted by the indoor air blower, and a partition plate, which separates light air in which snow or the like is not included, and heavy air in which snow or the like is included, by centrifugal force of the cyclone fan at a blowoff outlet of the cyclone fan.
    Type: Application
    Filed: June 28, 2013
    Publication date: February 25, 2016
    Applicant: Mitsubishi Electric Corporation
    Inventors: Yasuyuki SOGAWA, Yukio NISHIDA
  • Patent number: 9245921
    Abstract: The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that has a gate length larger than that of the gate electrode part.
    Type: Grant
    Filed: November 10, 2014
    Date of Patent: January 26, 2016
    Assignee: Renesas Electronics Corporation
    Inventors: Yuki Yamamoto, Yukio Nishida, Tomohiro Yamashita
  • Publication number: 20150206920
    Abstract: The performance of a semiconductor device is improved by preventing 1/f noise from being generated in a peripheral transistor, in the case where the occupation area of photodiodes, which are included in each of a plurality of pixels that form an image pickup device, is expanded. In the semiconductor device, the gate electrode of an amplification transistor is formed by both a gate electrode part over an active region and a large width part that covers the boundary between the active region and an element isolation region and the active region near the boundary and that. has a gate length larger than that of the gate electrode part.
    Type: Application
    Filed: November 10, 2014
    Publication date: July 23, 2015
    Inventors: Yuki YAMAMOTO, Yukio NISHIDA, Tomohiro YAMASHITA
  • Publication number: 20150123178
    Abstract: The present invention improves the performance of an image sensor. In a planar view, fluorine is introduced into a part overlapping with a channel region in a gate electrode GE1 of an amplification transistor and is not introduced into the interior of a semiconductor substrate 1S. Concretely as shown in FIG. 20, a resist film FR1 is patterned in the manner of opening the part planarly overlapping with the channel region in the gate electrode GE1. Then fluorine is injected into the interior of the gate electrode GE1 exposed from an opening OP1 by an ion implantation method using the resist film FR1 in which the opening OP1 is formed as a mask.
    Type: Application
    Filed: October 25, 2014
    Publication date: May 7, 2015
    Inventors: Yukio Nishida, Tomohiro Yamashita, Yuki Yamamoto