Patents by Inventor Yukio Sakashita

Yukio Sakashita has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8872413
    Abstract: A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 ?m and includes a perovskite oxide represented by a general formula (P) given below: (K1-w-x,Aw,Bx)(Nb1-y-z,Cy,Dz)O3??(P), where: 0<w<1.0, 0?x?0.2, 0?y<1.0, 0?z?0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: October 28, 2014
    Assignees: FUJIFILM Corporation, Tokyo Institute of Technology
    Inventors: Yukio Sakashita, Hiroshi Funakubo, Minoru Kurosawa, Mutsuo Ishikawa, Hiro Einishi, Takahisa Shiraishi
  • Patent number: 8828524
    Abstract: A layered structure, including a flexible resin substrate and a composite piezoelectric film formed on the resin substrate and constituted by an organic polymer resin matrix and a plurality of inorganic piezoelectric bodies dispersed in the matrix.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: September 9, 2014
    Assignee: FUJIFILM Corporation
    Inventor: Yukio Sakashita
  • Patent number: 8771541
    Abstract: A polymer composite piezoelectric body is obtained by conducting polarization treatment on a composite having piezoelectric particles uniformly mixed by dispersion in a polymer matrix containing cyanoethylated polyvinyl alcohol.
    Type: Grant
    Filed: June 3, 2013
    Date of Patent: July 8, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Tetsu Miyoshi, Tsutomu Sasaki, Yukio Sakashita
  • Patent number: 8728283
    Abstract: Film formation conditions are determined in accordance with relationships among a film formation temperature Ts (° C.), a difference Vs?Vf (V), which is the difference between a plasma potential Vs (V) in the plasma at the time of the film formation and a floating potential Vf (V), and characteristics of the formed film. For a piezoelectric film containing at least one kind of Pb-containing perovskite type oxide, the film formation conditions should preferably be determined within a range such that Formulas (1) and (2) shown below are satisfied: Ts(° C.)?400??(1) ?0.2Ts+100<Vs?Vf(V)<?0.
    Type: Grant
    Filed: September 27, 2007
    Date of Patent: May 20, 2014
    Assignee: FUJIFILM Corporation
    Inventors: Takamichi Fujii, Yukio Sakashita
  • Patent number: 8597537
    Abstract: A perovskite oxide, which includes a first component represented by General Formula (P1) given below and a second component represented by General Formula (P2) given below. (Bix1, Xx2) (Fez1, Mnz2)O3 ??(P1) (Ay1, Yy2)BO3 ??(P2) (where, Bi is an A-site element and X is an A-site element with an average ion valence of not less than four. A is one kind or a plurality of kinds of A site elements other than Pb with an average ion valence of two, Y is a one kind or a plurality of kinds of A-site elements with an average valence of not less than three. Fe and Mn are B-site elements, and B is one kind or plurality of kinds of B-site elements with an average ion valence of four.) 0.6?x1<1.0, 0?x2?0.4, 0.65?y1<1.0, 0?y2?0.4, x2+y2>0, 0.6?z1<1.0, 0?z2?0.4.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: December 3, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Tsutomu Sasaki, Yukio Sakashita
  • Patent number: 8597536
    Abstract: Disclosed is a non-lead perovskite oxide having a low Curie temperature and high ferroelectricity represented by General Formula (P) given below. (Bix1,Bax2,Xx3)(Fey1,Tiy2,Mny3)O3??(P) (where, Bi and Ba are A-site elements, X is one kind or a plurality of kinds of A-site elements, other than Pb and Ba, with an average ion valence of 2. Fe, Ti, and Mn are B-site elements. O is oxygen. 0<x1+X2<1.0, 0<x3<1.0, 0<y1+y2<1.0, 0?y3<1.0, 0<x1, 0<x2, 0<y1, 0<y2. The standard molar ratios among A-site elements, B-site elements, and oxygen are 1:1:3, but the molar ratios among them may deviate from the standard ratios within a range in which a perovskite structure may be formed.
    Type: Grant
    Filed: May 26, 2011
    Date of Patent: December 3, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Tsutomu Sasaki, Yukio Sakashita
  • Patent number: 8598769
    Abstract: A perovskite oxide material containing: BiFeO3 as a first component; a second component containing at least one perovskite oxide which is constituted by A-site atoms having an average ionic valence of two and has a tendency to form a tetragonal structure; and a third component containing at least one perovskite oxide which has a tendency to form one of monoclinic, triclinic, and orthorhombic structures; where each perovskite oxide in the first component, the second component, and the third component contains A-site atoms, B-site atoms, and oxygen atoms substantially in a molar ratio of 1:1:3, and the molar ratio can deviate from 1:1:3 within a range.
    Type: Grant
    Filed: July 8, 2010
    Date of Patent: December 3, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Hiroyuki Kobayashi, Yukio Sakashita
  • Publication number: 20130307371
    Abstract: A power generation device includes: a composite layer formed by a dielectric elastomer with ferroelectric particles dispersed therein; and a pair of electrodes disposed on opposite sides of the composite layer, the pair of electrodes being stretchable and compressible along with stretch and compression of the composite layer. The ferroelectric particles have crystal orientability and are orientationally dispersed in the dielectric elastomer, and are polarized in the layer thickness direction of the composite layer.
    Type: Application
    Filed: July 23, 2013
    Publication date: November 21, 2013
    Applicant: Fujifilm Corporation
    Inventor: Yukio SAKASHITA
  • Patent number: 8549718
    Abstract: A ferroelectric oxide structure includes a substrate and a ferroelectric thin-film deposited on the substrate. The ferroelectric thin-film has a thickness of greater than or equal to 200 nm and a tetragonal crystal system. The ferroelectric thin-film has (100) single-orientation crystal orientation.
    Type: Grant
    Filed: September 17, 2012
    Date of Patent: October 8, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Hiroyuki Kobayashi, Yukio Sakashita
  • Publication number: 20130256581
    Abstract: A polymer composite piezoelectric body is obtained by conducting polarization treatment on a composite having piezoelectric particles uniformly mixed by dispersion in a polymer matrix containing cyanoethylated polyvinyl alcohol.
    Type: Application
    Filed: June 3, 2013
    Publication date: October 3, 2013
    Inventors: Tetsu MIYOSHI, Tsutomu SASAKI, Yukio SAKASHITA
  • Publication number: 20130234564
    Abstract: A perovskite oxide film is formed on a substrate, in which the perovskite oxide film has an average film thickness of not less than 5 ?m and includes a perovskite oxide represented by a general formula (P) given below: (K1?w?x, Aw, Bx)(Nb1?y?z, Cy, Dz)O3 - - - (P), where: 0<w<1.0, 0?x?0.2, 0?y<1.0, 0?z?0.2, 0<w+x<1.0, A is an A-site element having an ionic valence of 1 other than K, B is an A-site element, C is a B-site element having an ionic valence of 5, D is a B-site element, each of A to D is one kind or a plurality of kinds of metal elements.
    Type: Application
    Filed: April 24, 2013
    Publication date: September 12, 2013
    Inventors: Yukio SAKASHITA, Hiroshi FUNAKUBO, Minoru KUROSAWA, Mutsuo ISHIKAWA, Hiro EINISHI, Takahisa SHIRAISHI
  • Patent number: 8525658
    Abstract: An interior tire power generation apparatus includes a piezoelectric section having an inorganic piezoelectric body of a perovskite type oxide represented by General Formula (PX) below; a pair of electrodes for extracting an electric charge generated in the piezoelectric section when strained by an external force exerted on the tire; and an energy storage unit for storing the extracted electric charge. (Bix, A1-x) (By, C1-y)O3 ??(PX) where, A is an A-site element, other than Pb, with an average ionic valence of 2, B is a B-site element with an average ionic valence of 3, C is a B-site element with an average ionic valence of greater than 3, and each of A, B, and C is one or a plurality of types of metal elements. O is oxygen. B and C are of different compositions. 0.6?x?1.0, x-0.2?y?x.
    Type: Grant
    Filed: September 27, 2010
    Date of Patent: September 3, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Yasutoshi Hirabayashi, Yukio Sakashita
  • Patent number: 8434856
    Abstract: A process for producing a piezoelectric oxide having a composition (A, B, C)(D, E, F)O3, where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4), 0.98?TF(P)?1.01,??(1) TF(ADO3)>1.0,??(2) TF(BEO3)<1.0, and??(3) TF(BEO3)<TF(CFO3)<TF(ADO3),??(4) where TF(P) is the tolerance factor of the perovskite oxide, and TF(ADO3), TF(BEO3), and TF(CFO3) are respectively the tolerance factors of the compounds ADO3, BEO3, and CFO3.
    Type: Grant
    Filed: March 4, 2011
    Date of Patent: May 7, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Yukio Sakashita, Tsutomu Sasaki
  • Patent number: 8419967
    Abstract: A perovskite oxide represented by a general expression, (Aa, Bb)(Cc, Dd, Xx)O3. (where, A: an A-site element, A=Bi, 0<a, B: one or more types of A-site elements, 0?b<1.0, C: an B-site element, C=Fe, 0 <c<1.0, D: one or more types of B-site elements, 0?d<1.0, 0<b+d, X: one or more types of B-site elements, the average valence of which is greater than the average valence of C and D in chemical formula, 0<x<1.0, (average valence of A-site in chemical formula) +(average valence of B-site in chemical formula)>6.0, O: oxygen, and standard molar ratio among A-site elements, B-site elements, and oxygen is 1:1:3, but it may deviate from the standard within a range in which a perovskite structure is possible.
    Type: Grant
    Filed: July 16, 2009
    Date of Patent: April 16, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Tsutomu Sasaki, Yukio Sakashita, Hiroyuki Kobayashi
  • Patent number: 8405285
    Abstract: A piezoelectric device which includes a piezoelectric body having piezoelectricity and a pair of electrodes for applying an electric field to the piezoelectric body in a predetermined direction in which a piezoelectric strain constant d33 (pm/V) and a relative pemittivity ?33 of the piezoelectric body satisfy Formulae (1) and (2) below. This makes the piezoelectric device excellent both in transmission and reception capabilities and appropriate for use as a piezoelectric actuator, a sensor, an ultrasonic sensor, or a power generating device. 100<?33<1500??(1) d33(pm/V)>12??33??(2).
    Type: Grant
    Filed: June 7, 2010
    Date of Patent: March 26, 2013
    Assignee: FUJIFILM Corporation
    Inventors: Hiroyuki Kobayashi, Yukio Sakashita
  • Patent number: 8177995
    Abstract: A process for producing a piezoelectric oxide having a composition (Ba, Bi, A)(Ti, Fe, M)O3, where each of A and M represents one or more metal elements. The composition is determined so as to satisfy the conditions (1) and (2), 0.98?TF(P)?1.02,??(1) TF(BiFeO3)<TF(AMO3)<TF(BaTiO3),??(2) where TF(P) is the tolerance factor of the perovskite oxide, and TF(BaTiO3), TF(BiFeO3), and TF(AMO3) are respectively the tolerance factors of the oxides BaTiO3, BiFeO3, and AMO3.
    Type: Grant
    Filed: March 12, 2009
    Date of Patent: May 15, 2012
    Assignee: Fujifilm Corporation
    Inventors: Hiroyuki Kobayashi, Yukio Sakashita
  • Patent number: 8151727
    Abstract: A film formed on a substrate different from the monocrystalline perovskite substrate contains a piezoelectric oxide expressed as A(BxC1-x)O3 other than Bi(FeySc1-y)O3 and Bi(Fe, Co)O3, where 0<x<1.0, 0.5=y=0.9, A, B, and C are metallic elements, A represents one or more A-site elements including Bi as a main component, B represents one or more B-site elements including as a main component an element which can constitute a perovskite structure together with the one or more A-site elements represented by A, and C represents one or more B-site elements which are unable or hard to constitute a perovskite structure together with the one or more A-site elements represented by A.
    Type: Grant
    Filed: March 30, 2009
    Date of Patent: April 10, 2012
    Assignee: FujiFilm Corporation
    Inventors: Tsutomu Sasaki, Yukio Sakashita
  • Publication number: 20110292134
    Abstract: A perovskite oxide, which includes a first component represented by General Formula (P1) given below and a second component represented by General Formula (P2) given below. (Bix1, Xx2) (Fez1, Mnz2)O3 ??(P1) (Ay1, Yy2)BO3 ??(P2) (where, Bi is an A-site element and X is an A-site element with an average ion valence of not less than four. A is one kind or a plurality of kinds of A site elements other than Pb with an average ion valence of two, Y is a one kind or a plurality of kinds of A-site elements with an average valence of not less than three. Fe and Mn are B-site elements, and B is one kind or plurality of kinds of B-site elements with an average ion valence of four.) 0.6?x1<1.0, 0?x2?0.4, 0.65?y1<1.0, 0?y2?0.4, x2+y2>0, 0.6?z1<1.0, 0?z2?0.4.
    Type: Application
    Filed: May 26, 2011
    Publication date: December 1, 2011
    Inventors: Tsutomu SASAKI, Yukio SAKASHITA
  • Publication number: 20110292133
    Abstract: Disclosed is a non-lead perovskite oxide having a low Curie temperature and high ferroelectricity represented by General Formula (P) given below. (Bix1, Bax2, Xx3)(Fey1, Tiy2, Mny3)O3 ??(P) (where, Bi and Ba are A-site elements, X is one kind or a plurality of kinds of A-site elements, other than Pb and Ba, with an average ion valence of 2. Fe, Ti, and Mn are B-site elements. O is oxygen. 0<x1+X2<1.0, 0<x3<1.0, 0<y1+y2<1.0, 0?y3<1.0, 0<x1, 0<x2, 0<y1, 0<y2. The standard molar ratios among A-site elements, B-site elements, and oxygen are 1:1:3, but the molar ratios among them may deviate from the standard ratios within a range in which a perovskite structure may be formed.
    Type: Application
    Filed: May 26, 2011
    Publication date: December 1, 2011
    Inventors: Tsutomu SASAKI, Yukio Sakashita
  • Patent number: 8030828
    Abstract: A piezoelectric device includes a piezoelectric film, and electrodes through which an electric field can be applied to the piezoelectric film along the thickness direction of the piezoelectric film. The piezoelectric film contains a ferroelectric phase in which the thickness direction and a normal of a plane determined by the spontaneous-polarization axis and the axis makes an angle ?m satisfying the condition that ?45 degrees<?m<+45 degrees and ?m?0 degrees. Further, the spontaneous-polarization axis or the axis may be perpendicular to the thickness direction of the piezoelectric film.
    Type: Grant
    Filed: May 6, 2008
    Date of Patent: October 4, 2011
    Assignee: FujiFilm Corporation
    Inventors: Hiroyuki Kobayashi, Yukio Sakashita