Abstract: A multi-layered unit according to the present invention includes a support substrate formed of a material which has conductivity and on which a dielectric material containing a bismuth layer structured compound can be epitaxially grown, at least the surface thereof being oriented in the [001] direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the support substrate and formed of a dielectric material containing a bismuth layer structured compound oriented in the [001] direction.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed on the support substrate of silicon oxide, an electrode layer formed on the barrier layer of platinum, a buffer layer formed on the electrode layer of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12, having an excellent orientation characteristic and oriented in the c axis direction, and a dielectric layer formed on the buffer layer of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12, having an excellent capacitor characteristic and oriented in the c axis direction.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed of silicon oxide on the support substrate, an electrode layer, which is formed of BSCCO (bismuth strontium calcium copper oxide) having a stoichiometric composition represented by Bi2Sr2CaCu2O8, having an anisotropic property and conductivity and enabling epitaxial growth of a dielectric material containing a bismuth layer structured compound thereon and is oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 on the electrode layer and oriented in the c axis direction on the electrode layer.

Abstract: A thin film capacitor including a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first and second electrode structural bodies and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the dielectric thin film is naturally oriented so that its c axis is substantially perpendicular to the electrode structural bodies. When a voltage is applied between the first and second electrode structural bodies, since the direction of the electric field substantially coincides with the c axis of the bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property.

Abstract: A thin film capacitor according to the present invention includes a first electrode structural body, a second electrode structural body and a dielectric thin film provided between the first electrode structural body and the second electrode structural body and containing a bismuth layer structured compound. The surface of the first electrode structural body in contact with the dielectric thin film is oriented in the [001] direction. As a result, the orientation of the bismuth layer structured compound contained in the dielectric thin film in the [001] direction, namely, the c axis direction thereof, can be improved. Therefore, when a voltage is applied between the first electrode structural body and the second electrode structural body, since the direction of the electric field substantially coincides with the c axis of bismuth layer structured compound, the bismuth layer structured compound can be prevented from exhibiting the ferroelectric property and made to sufficiently exhibit the paraelectric property.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of a material which has conductivity and on which a dielectric material containing a bismuth layer structured compound can be epitaxially grown, at least the surface thereof being oriented in the [001] direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the support substrate and formed of a dielectric material containing a bismuth layer structured compound oriented in the [001] direction.

Abstract: A thin-film capacitor (2) in which a lower electrode (6), a dielectric thin-film (8), and an upper electrode (10) are formed in order on a substrate (4). The dielectric thin-film (8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate and which is expressed by a formula: (Bi2O2)2+(Am−1BmO3m+1)2−, or Bi2Am−1BmO3m+3 wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. The temperature characteristics of the dielectric constant are excellent. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the break-down voltage is improved and the surface smoothness is excellent.

Abstract: A thin-film capacitor(2) in which a lower electrode(6), a dielectric thin-film(8), and an upper electrode(10) are formed in order on a substrate(4). The dielectric thin-film(8) is made of a composition for thin-film capacitance devices. The composition includes a bismuth layer-structured compound whose c-axis is oriented vertically to the substrate surface and which is expressed by a formula: (Bi2O2)2+(Am−1BmO3m+1)2−, or Bi2Am−1BmO3m+3 wherein “m” is an odd number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta Sb, V, Mo and W. Even if the dielectric thin-film is made more thinner, the dielectric constant is relatively high, and the loss is small. The leak characteristics are excellent, the temperature characteristics of the dielectric constant are excellent, the break-down voltage is improved and the surface smoothness is excellent.

Abstract: A magnetic garnet single crystal film formation substrate for growing a magnetic garnet single crystal film by liquid phase epitaxial growth is provided. This substrate comprises a base substrate composed of a garnet-based single crystal which is unstable with a flux used for the liquid phase epitaxial growth and a buffer layer composed of a garnet-based single crystal thin film formed on the base substrate and being stable with said flux. A high-quality magnetic garnet single crystal film can be produced by using the substrate. The magnetic garnet single crystal film is used as an optical element, such as a Faraday element, used in an optical isolator, optical circulator and magneto-optical sensor, etc.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, a buffer layer formed on the support substrate and formed of a dielectric material containing a bismuth layer structured compound oriented in the c axis direction, an electrode layer formed by epitaxially growing crystals of a conductive material on the buffer layer and oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the electrode layer and oriented in the c axis direction.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, an electrode layer formed on the support substrate and formed of a conductive material, a buffer layer formed on the electrode layer and formed of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12 and having an excellent orientation characteristic so that the bismuth layer structured compound is oriented in the c axis direction, and a dielectric layer formed on the buffer layer and formed of a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 and having an excellent orientation characteristic so that the bismuth layer structured compound is oriented in the c axis direction.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, a buffer layer formed on the support substrate and formed of a dielectric material containing a bismuth layer structured compound oriented in the c axis direction, an electrode layer formed by epitaxially growing crystals of a conductive material on the buffer layer and oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the electrode layer and oriented in the c axis direction.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed of silicon oxide on the support substrate, an electrode layer, which is formed of BSCCO (bismuth strontium calcium copper oxide) having a stoichiometric composition represented by Bi2Sr2CaCu2O8, having an anisotropic property and conductivity and enabling epitaxial growth of a dielectric material containing a bismuth layer structured compound thereon and is oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 on the electrode layer and oriented in the c axis direction on the electrode layer.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed on the support substrate of silicon oxide, an electrode layer formed on the barrier layer of platinum, a buffer layer formed on the electrode layer of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12, having an excellent orientation characteristic and oriented in the c axis direction, and a dielectric layer formed on the buffer layer of a dielectric material containing a bismuth layer structured compound having a composition represented by Bi4Ti3O12, having an excellent capacitor characteristic and oriented in the c axis direction.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of a silicon single crystal, a barrier layer formed of silicon oxide on the support substrate, a buffer layer formed on the barrier layer and formed of a dielectric material containing a bismuth layer structured compound oriented in the c axis direction, an electrode layer formed by epitaxially growing a conductive material on the buffer layer and oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound on the electrode layer and oriented in the c axis direction.

Abstract: A multi-layered unit according to the present invention includes a support substrate formed of fused quartz, an electrode layer formed on the support substrate, made of BSCCO (bismuth strontium calcium copper oxide) having a stoichiometric composition represented by Bi2Sr2CaCu2O8, having an anisotropic property and conductivity and enabling epitaxial growth of a dielectric material containing a bismuth layer structured compound thereon and oriented in the c axis direction, and a dielectric layer formed by epitaxially growing a dielectric material containing a bismuth layer structured compound having a composition represented by SrBi4Ti4O15 on the electrode layer.

Abstract: A protection plate 36a and a protection plate 36b, which are each of a substantially rectangular shape and which extend upwards from respective substantially central portions of opposite lengthwise ends of an attachment platform 34, are formed in the attachment platform 34 by bending part of the attachment platform 34. Also, stoppers 46a and 46b, which have notches 48for protecting two surfaces on either side of the ridge line of the oscillator 12, are attached to the attachment platform 34. Further the oscillator 12, the attachment platform 34, and the stoppers 46a and 46b etc. are housed in a box-shaped case 50. Accordingly, the vicinities of both lengthwise ends of the oscillator 12 are surrounded and protected by the stoppers 46a and 46b. The protection plates 36a and 36b, and the inner side surface of the case 50 as the protection members in the predetermined space d. By means of this structure, an oscillation gyroscope is provided in which the shock resistance is further improved.

Abstract: A vibrating gyroscope has a mounting substrate carrying a vibrator. The mounting substrate is supported and fixed by a plurality of connecting members at a level above a circuit board. The supporting members also provide electrical connection between a wiring on the mounting substrate and a circuitry including an oscillation circuit and a detection circuit on the circuit board. Each connecting member has one end fixed to a point on the mounting substrate substantially in the middle of the path of propagation of vibration which is between supporting pins and which detours around a slit formed in the mounting substrate.

Abstract: The vibrating gyroscope includes, for example, a regular triangular prism-shaped vibrating body. The vibrating body is formed with a material which generally generates mechanical vibration such as elinver, ceramics. The piezoelectric elements are respectively formed to the three sidefaces of the vibrating body. An oscillation circuit is connected between the two piezoelectric elements and the other piezoelectric element. Further, two U-shape supporting members made of metal wire are fixed to the ridge-line portions of the vicinity of the nodal points of the vibrating body. The both ends of the two supporting members are fixed to the rectangular-shaped supporting body. The supporting body has a cutting portion piercing through it from its one surface to the other or a groove portion as a suppressing means for suppressing the interference of vibrations between the fixing points of the ends of one supporting member and those of the other supporting member.

Abstract: A vibratory gyroscope 10 includes a vibrator 12. The vibrator 12 includes a regular triangular prism-shaped vibrating body 14. On centers of the three side faces of the vibrating body 14, piezoelectric elements 16a, 16b and 16c are formed respectively. The vibrating body 14 is supported above a base plate 20 by supporting members. The vibrating body 14 vibrates vertically with no rotation. A case 22 is secured so as to cover the vibrating body 14. An upper portion 26 of the case 22 is so formed that its inner size in the direction of the width is shorter than a half-wave length of a sound wave of a vibrating frequency of the vibrating body 14.