Abstract: A method of manufacturing a functional film by which a functional film formed on a film formation substrate can be easily peeled from the film formation substrate. The method includes the steps of: (a) forming a separation layer on a substrate by using an inorganic material which is decomposed to generate a gas by being applied with an electromagnetic wave; (b) forming a layer to be peeled containing a functional film, which is formed by using a functional material, on the separation layer; and (c) applying the electromagnetic wave toward the separation layer so as to peel the layer to be peeled from the substrate or reduce bonding strength between the layer to be peeled and the substrate.

Abstract: A layered structure, including a flexible resin substrate and a composite piezoelectric film formed on the resin substrate and constituted by an organic polymer resin matrix and a plurality of inorganic piezoelectric bodies dispersed in the matrix.

Abstract: A process for producing a piezoelectric oxide having a composition (A, B, C)(D, E, F)O3, where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4), 0.98?TF(P)?1.01,??(1) TF(ADO3)>1.0,??(2) TF(BEO3)<1.0, and??(3) TF(BEO3)<TF(CFO3)<TF(ADO3),??(4) where TF(P) is the tolerance factor of the perovskite oxide, and TF(ADO3), TF(BEO3), and TF(CFO3) are respectively the tolerance factors of the compounds ADO3, BEO3, and CFO3.

Abstract: A method of manufacturing a functional film by which the functional film formed on a film formation substrate can be easily peeled from the film formation substrate. The method includes the steps of: (a) forming a separation layer by using an inorganic material on a substrate containing a material having heat tolerance to a predetermined temperature; (b) forming a layer to be peeled containing a functional film, which is formed by using a functional material, on the separation layer; and (c) performing heat treatment on a structure containing the substrate, the separation layer and the layer to be peeled at the predetermined temperature so as to peel the layer to be peeled from the substrate or reducing bonding strength between the layer to be peeled and the substrate.

Abstract: A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98<TF(PX)<1.01, (1) TF(ABO3)>1.0, and (2) TF(ACO3)<1.0, (3) where each of A, B, and C represents one or more metal elements, the main component of one or more A-site elements is bismuth, the composition of one or more B-site element represented by B is different from the composition of one or more B-site element represented by C, TF(PX) is the tolerance factor of the oxide expressed by the compositional formula A(B, C)O3, and TF(ABO3) and TF(ACO3) are respectively the tolerance factors of the oxides expressed by the compositional formulas ABO3 and ACO3.

Abstract: A process for producing a piezoelectric oxide having a composition (A, B, C) (D, E, F)O3, where each of A, B, C, D, E, and F represents one or more metal elements. The composition is determined so as to satisfy the conditions (1), (2), (3), and (4), 0.98?TF(P)?1.01,??(1) TF(ADO3)>1.0,??(2) TF(BEO3)<1.0, and??(3) TF(BEO3)<TF(CFO3)<TF(ADO3),??(4) where TF(P) is the tolerance factor of the perovskite oxide, and TF(ADO3), TF(BEO3), and TF(CFO3) are respectively the tolerance factors of the compounds ADO3, BEO3, and CFO3.

Abstract: A polymer composite piezoelectric material is formed, which includes a matrix of an organic polymer resin, and a piezoelectric material included in the matrix. The piezoelectric material contains a perovskite oxide having a composition represented by general formula (PX) below: (Bix,A1-x)(By,C1-y)O3??(PX), wherein A represents an A-site element with an average ionic valence of two other than Pb, B represents a B-site element with an average ionic valence of three, C represents a B-site element with an average ionic valence greater than three, each of A, B and C is one or two or more metal elements, O is oxygen, B and C have different compositions from each other, 0.6?x?1.0, and x?0.2?y?x.

Abstract: An interior tire power generation apparatus includes a piezoelectric section having an inorganic piezoelectric body of a perovskite type oxide represented by General Formula (PX) below; a pair of electrodes for extracting an electric charge generated in the piezoelectric section when strained by an external force exerted on the tire; and an energy storage unit for storing the extracted electric charge. (Bix, A1-x) (By, C1-y)O3 ??(PX) where, A is an A-site element, other than Pb, with an average ionic valence of 2, B is a B-site element with an average ionic valence of 3, C is a B-site element with an average ionic valence of greater than 3, and each of A, B, and C is one or a plurality of types of metal elements. O is oxygen. B and C are of different compositions. 0.6?x?1.0, x-0.2?y?x.

Abstract: A perovskite-oxide lamination constituted by a substrate and one or tore first films of a first oxide of a perovskite type and one or more second films of a second oxide which are alternately formed over the substrate. The first oxide has a composition expressed as ABO3, the second oxide has a composition expressed as CDO3, each of A and C represents one or more A-site elements which are one or more metal elements, each of B and D represents one or more B-site elements which are one or more metal elements, O represents oxygen, and the second oxide is unable to be formed to have a perovskite crystal structure at normal pressure without a thickness limitation. The one or more first films and the one or more second films may contain inevitable impurities.

Abstract: A perovskite oxide represented by a general expression, (Aa, Bb)(Cc, Dd, Xx)O3. (where, A: an A-site element, A=Bi, 0<a, B: one or more types of A-site elements, 0?b<1.0, C: an B-site element, C?Fe, 0<c<1.0, D: one or more types of B-site elements, 0?d<1.0, 0<b+d, X: one or more types of B-site elements, the average valence of which is greater than the average valence of C and D in chemical formula, 0<x<1.0, (average valence of A-site in chemical formula)+(average valence of B-site in chemical formula)>6.0, 0: oxygen, and standard molar ratio among A-site elements, B-site elements, and oxygen is 1:1:3, but it may deviate from the standard within a range in which a perovskite structure is possible.

Abstract: A perovskite oxide material containing: BiFeO3 as a first component; a second component containing at least one perovskite oxide which is constituted by A-site atoms having an average ionic valence of two and has a tendency to form a tetragonal structure; and a third component containing at least one perovskite oxide which has a tendency to form one of monoclinic, triclinic, and orthorhombic structures; where each perovskite oxide in the first component, the second component, and the third component contains A-site atoms, B-site atoms, and oxygen atoms substantially in a molar ratio of 1:1:3, and the molar ratio can deviate from 1:1:3 within a range

Abstract: A piezoelectric device which includes a piezoelectric body having piezoelectricity and a pair of electrodes for applying an electric field to the piezoelectric body in a predetermined direction in which a piezoelectric strain constant d33 (pm/V) and a relative pemittivity ?33 of the piezoelectric body satisfy Formulae (1) and (2) below. This makes the piezoelectric device excellent both in transmission and reception capabilities and appropriate for use as a piezoelectric actuator, a sensor, an ultrasonic sensor, or a power generating device.

Abstract: A piezoelectric device comprises a piezoelectric body and electrodes for applying an electric field in a predetermined direction across the piezoelectric body. The piezoelectric body contains an inorganic compound polycrystal, which contains first ferroelectric substance crystals having orientational characteristics at the time free from electric field application and has characteristics such that, with application of at least a predetermined electric field E1, at least part of the first crystals undergoes phase transition to second ferroelectric substance crystals of a crystal system different from the crystal system of the first crystals. The piezoelectric device is actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Emin<E1<Emax.

Abstract: A perovskite oxide is represented by a general formula ABO3 A represents at least one kind of metal element forming an A site, B represents at least one kind of metal element forming a B site. The B site includes at least one kind of metal element B1 selected from an element group consisting of the IV group elements and at least one kind of metal element B2 selected from an element group consisting of the V and VI group elements, and at least a part of the metal element B2 is of the 0 to +4 valence.

Abstract: A piezoelectric body contains a ferroelectric substance phase having characteristics such that, in cases where an applied electric field is increased from the time free from electric field application, phase transition of the ferroelectric substance phase to a ferroelectric substance phase of a different crystal system occurs at least two times. The piezoelectric body should preferably be actuated under conditions such that a minimum applied electric field Emin and a maximum applied electric field Emax satisfy Formula (1): Emin<E1<Emax??(1) wherein the electric field E1 represents the electric field at which the first phase transition of the ferroelectric substance phase begins.

Abstract: A film formed on a substrate different from the monocrystalline perovskite substrate contains a piezoelectric oxide expressed as A(BxC1-x)O3 other than Bi(FeySc1-y)O3 and Bi(Fe, Co)O3, where 0<x<1.0, 0.5=y=0.9, A, B, and C are metallic elements, A represents one or more A-site elements including Bi as a main component, B represents one or more B-site elements including as a main component an element which can constitute a perovskite structure together with the one or more A-site elements represented by A, and C represents one or more B-site elements which are unable or hard to constitute a perovskite structure together with the one or more A-site elements represented by A.

Abstract: The cantilever-type sensor detects a substance to be measured as it is contained in a liquid. The sensor includes a cantilever that is fixed at least at an end to a support section and which has a channel formed inside, a piezoelectric device that is composed of a piezoelectric element and electrode sections formed on opposite sides of the piezoelectric element and which is positioned on at least one side of the cantilever, a drive section that applies a voltage to the electrode sections of the piezoelectric device so as to vibrate the cantilever, a detecting section that detects vibration of the cantilever from expansion or contraction of the piezoelectric device and a liquid supply unit for flowing the liquid through the channel in the cantilever. The cantilever-type sensor features high precision in measurement and is compact and less costly.

Abstract: A piezoelectric device constituted by a piezoelectric body and electrodes. The piezoelectric body is a monocrystalline piezoelectric film formed, above a substrate, of an inorganic crystalline compound containing a first ferroelectric crystal when no electric field is applied to the piezoelectric film, and having a characteristic that phase transition of at least a portion of the first ferroelectric crystal to a second ferroelectric crystal occurs when the electric field strength applied to the piezoelectric film is at or above a predetermined level E1, the first and second ferroelectric crystals correspond to different crystal systems, and the piezoelectric device is driven under a condition that the minimum strength Emin, the maximum strength Emax, and the predetermined level E1 of the applied electric field satisfy the inequalities, Emin<E1<Emax.

Abstract: A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi2O2)2+(Am?1BmO3m+1)2? or Bi2Am?1BmO3m+3, wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi2O2)2+(Am?1BmO3m+1)2? or Bi2Am?1BmO3m+3, and the excessive content of Bi is in a range of 0<Bi<0.5×m mol in of Bi.

Abstract: A process for producing a perovskite oxide having a composition expressed by the compositional formulas A(B, C)O3, and determined so as to satisfy the conditions (1), (2), and (3), 0.98<TF(PX)<1.01, (1) TF(ABO3)>1.0, and (2) TF(ACO3)<1.0, (3) where each of A, B, and C represents one or more metal elements, the main component of one or more A-site elements is bismuth, the composition of one or more B-site element represented by B is different from the composition of one or more B-site element represented by C, TF(PX) is the tolerance factor of the oxide expressed by the compositional formula A(B, C)O3, and TF(ABO3) and TF(ACO3) are respectively the tolerance factors of the oxides expressed by the compositional formulas ABO3 and ACO3.