Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Abstract: A method of manufacturing an organic electroluminescent device, which, on a substrate, has a plurality of first electrodes, a light-emitting functional layer disposed to correspond to formation positions of the first electrodes, and a second electrode covering the light-emitting functional layer, includes forming a buffering layer that covers the second electrode, and forming a gas barrier layer that covers the buffering layer. The forming of the buffering layer includes coating a coating material having a monomer/oligomer material and a curing agent under a vacuum atmosphere, without a solvent, and thermally curing the coating material so as to form the buffering layer.

Abstract: A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.

Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.

Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.

Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.

Abstract: Information stored in an IC card which can be set to a block state, where any functions permitted to a user authority holder is not effective and an unblock password is required to set the IC card back to an initial state, is more secured than that stored in an IC card without the block state. The IC card of the present invention is further provided with a counter counting the number of incorrect unblock passwords, and is set to a more secured state of operation where only administrative authority holder can release the IC card.

Abstract: An emissive device includes a substrate; a plurality of first electrodes; pixel banks having a plurality of openings each corresponding to the position of a corresponding one of the first electrodes; organic function layers disposed in at least the openings; a second electrode disposed so as to cover the pixel banks and the organic function layers; a first inorganic layer disposed over the second electrode; a second inorganic layer disposed over the first inorganic layer; an organic buffer layer disposed over the second inorganic layer; and a gas barrier layer disposed over the organic buffer layer.

Abstract: A light-emitting device includes: a plurality of light-emitting elements each of which has an anode, a thin organic light-emitting layer, and a cathode sequentially stacked on a substrate and emits light by excitation due to an electric field, the anode being separated from another anode by an insulating pixel partition wall; an organic buffer layer that is formed of an organic compound, covers an area larger than a region where the plurality of light-emitting elements are formed, has a step difference smaller than that of an upper surface of the cathode on the substrate, and is approximately flat; and first and second gas barrier layers that are formed of an inorganic compound, are disposed on an outer surface of the organic buffer layer, and protect the plurality of light-emitting elements against air.

Abstract: The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.

Abstract: A method of manufacturing an organic electroluminescent device, which, on a substrate, has a plurality of first electrodes, a light-emitting functional layer disposed to correspond to formation positions of the first electrodes, and a second electrode covering the light-emitting functional layer, includes forming a buffering layer that covers the second electrode, and forming a gas barrier layer that covers the buffering layer. The forming of the buffering layer includes coating a coating material having a monomer/oligomer material and a curing agent under a vacuum atmosphere, without a solvent, and thermally curing the coating material so as to form the buffering layer.

Abstract: An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective elements.

Abstract: A fire sensor comprising a baseplate, a temperature detecting element, and a protective case. The baseplate has an outside surface which serves as a heat sensing surface which is exposed to a hot airflow generated by a fire. The temperature detecting element thermally contacts with the inside surface of the baseplate to detect the temperature of the baseplate. The protective case contacts with the radially outer portion of the inside surface of the baseplate to form a hermetically sealed space between itself and the baseplate. The temperature detecting element is confined within the hermetically sealed space. The baseplate has the temperature detecting element in approximately the central portion of the inside surface thereof and also has a shape and a material which meet the condition that the product of the thickness and heat conductivity of the baseplate is 1.1×10?4 (W/K) or less.

Abstract: An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective elements.

Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.

Abstract: A fire heat sensor comprising a high-temperature detecting portion provided with a temperature detecting element which exhibits a fast heat response to a rise in ambient temperature, and a low-temperature detecting portion provided with a temperature detecting element which exhibits a slow heat response to a rise in ambient temperature. The fire heat sensor further comprises a resin member by which the high-temperature detecting portion and the low-temperature detecting portion are integrally formed so that heat energy is transferred from the temperature detecting element of the high-temperature detecting portion to the temperature detecting element of the low-temperature detecting portion. In the fire heat sensor, differential heat sensing is performed based on temperatures detected by the low-temperature detecting portion and the high-temperature detecting portion.

Abstract: An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective elements.

Abstract: A fire sensor comprising a heat detection element for detecting heat from a hot airflow generated by a fire, a sensor main body, and an outer cover, which has a plurality of plate fins protruding from the sensor main body, for protecting the heat detecting element. The plate fins have a predetermined offset angle to a center line passing through the center of the outer cover and are erected approximately perpendicular to the sensor main body.