Patents by Inventor Yukio Yamauchi

Yukio Yamauchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050073241
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Application
    Filed: November 4, 2004
    Publication date: April 7, 2005
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20050073242
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Application
    Filed: November 4, 2004
    Publication date: April 7, 2005
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 6853083
    Abstract: An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective elements.
    Type: Grant
    Filed: March 11, 1999
    Date of Patent: February 8, 2005
    Assignees: Semiconductor Energy Laboratory Co., Ltd., TDK Corporation
    Inventors: Yukio Yamauchi, Michio Arai
  • Patent number: 6844683
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: July 19, 2002
    Date of Patent: January 18, 2005
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20030132900
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Application
    Filed: January 7, 2003
    Publication date: July 17, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Publication number: 20030063005
    Abstract: A fire heat sensor comprising a high-temperature detecting portion provided with a temperature detecting element which exhibits a fast heat response to a rise in ambient temperature, and a low-temperature detecting portion provided with a temperature detecting element which exhibits a slow heat response to a rise in ambient temperature. The fire heat sensor further comprises a resin member by which the high-temperature detecting portion and the low-temperature detecting portion are integrally formed so that heat energy is transferred from the temperature detecting element of the high-temperature detecting portion to the temperature detecting element of the low-temperature detecting portion. In the fire heat sensor, differential heat sensing is performed based on temperatures detected by the low-temperature detecting portion and the high-temperature detecting portion.
    Type: Application
    Filed: September 25, 2002
    Publication date: April 3, 2003
    Applicant: Hoichiki Corporation
    Inventors: Kari Mayusumi, Yukio Yamauchi, Hiroshi Shima
  • Publication number: 20030058116
    Abstract: A fire sensor comprising a heat detection element for detecting heat from a hot airflow generated by a fire, a sensor main body, and an outer cover, which has a plurality of plate fins protruding from the sensor main body, for protecting the heat detecting element. The plate fins have a predetermined offset angle to a center line passing through the center of the outer cover and are erected approximately perpendicular to the sensor main body.
    Type: Application
    Filed: September 18, 2002
    Publication date: March 27, 2003
    Applicant: Hoichiki Corporation
    Inventors: Kari Mayusumi, Yukio Yamauchi, Hiroshi Shima
  • Publication number: 20030058117
    Abstract: A fire sensor comprising a baseplate, a temperature detecting element, and a protective case. The baseplate has an outside surface which serves as a heat sensing surface which is exposed to a hot airflow generated by a fire. The temperature detecting element thermally contacts with the inside surface of the baseplate to detect the temperature of the baseplate. The protective case contacts with the radially outer portion of the inside surface of the baseplate to form a hermetically sealed space between itself and the baseplate. The temperature detecting element is confined within the hermetically sealed space. The baseplate has the temperature detecting element in approximately the central portion of the inside surface thereof and also has a shape and a material which meet the condition that the product of the thickness and heat conductivity of the baseplate is 1.1×10−4 (W/K) or less.
    Type: Application
    Filed: September 19, 2002
    Publication date: March 27, 2003
    Applicant: Hoichiki Corporation
    Inventors: Kari Mayusumi, Yukio Yamauchi, Hiroshi Shima
  • Publication number: 20030057856
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Application
    Filed: July 19, 2002
    Publication date: March 27, 2003
    Applicant: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 6512504
    Abstract: An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
    Type: Grant
    Filed: April 18, 2000
    Date of Patent: January 28, 2003
    Assignee: Semiconductor Energy Laborayory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 6507072
    Abstract: In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is in contact with a gate insulating film and is contained at a high concentration in the second semiconductor layer which is not in contact with the gate insulating film. Accordingly, By existence of the first semiconductor layer is which the impurity is not doped, the impurity is prevented from penetrating through the gate insulating film from the gate electrode and diffusing into the channel forming region. Also, by existence of the second semiconductor layer in which high concentration impurity is doped, the gate electrode has low resistance.
    Type: Grant
    Filed: June 29, 2001
    Date of Patent: January 14, 2003
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventor: Yukio Yamauchi
  • Patent number: 6479334
    Abstract: A thin film transistor and a semiconductor device and a method for forming the same. A silicon thin film formed on an insulating substrate is heated at 550 to 800° C. so that it has crystallinity, and a thin film transistor is formed using the crystalline silicon film thus obtained. Thermal contraction of the insulating substrate is set in a range of 30 to 500 ppm in the heating process, so that the thin film transistor has high mobility, low threshold voltage and high off-resistance. Thermal contraction of the insulating substrate may be also set 100 ppm or less in a heating process after a patterning treatment in a thin film transistor producing process.
    Type: Grant
    Filed: November 22, 1999
    Date of Patent: November 12, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mitsufumi Codama, Yukio Yamauchi, Naoya Sakamoto, Takeshi Fukada
  • Patent number: 6452212
    Abstract: A semiconductor device comprising an active layer made from a crystalline silicon formed on a substrate having an insulating surface; a gate insulating film formed on said active layer; and a source region and a drain region provided in contact with said active layer; wherein, said active layer generates photo carriers upon irradiation of a light, a part of the thus generated photo carriers having the opposite polarity with respect to that of the carriers flowing in the vicinity of the interface with the gate insulating film is temporarily accumulated within said active layer to change the resistance of the region of said active layer, and the light irradiated to said active layer is detected from the change in current flow between the source and the drain which occurs in accordance with the change in resistance in the region of said active region.
    Type: Grant
    Filed: September 19, 1997
    Date of Patent: September 17, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Mitsufumi Codama, Kazushi Sugiura, Yukio Yamauchi, Naoya Sakamoto, Michio Arai
  • Patent number: 6452341
    Abstract: An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: September 17, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Yukio Yamauchi, Takeshi Fukunaga
  • Patent number: 6448580
    Abstract: The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.
    Type: Grant
    Filed: September 15, 2000
    Date of Patent: September 10, 2002
    Assignees: TDK Corporation, Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Michio Arai, Yukio Yamauchi
  • Patent number: 6410960
    Abstract: A hybrid (composite) integrated circuit element comprises a substrate, a thin film type integrated circuit formed on a substrate through a thin film process, and a lamination type passive circuit element such as a capacitor, inductor, resitance and a combination thereof formed on the integrated circuit. During the firing of passive circuit element in a hydrogen atmosphere, the semiconductor layer which constitutes the integrated circuit is also heat annealed. Various substrates can be used as the substrate, for example, quartz, ceramic and a cheap semiconductor substrate which has not been treated with a mirror-grinding by the use of a glass layer.
    Type: Grant
    Filed: January 7, 1999
    Date of Patent: June 25, 2002
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Michio Arai, Yukio Yamauchi, Naoya Sakamoto, Katsuto Nagano
  • Publication number: 20020073332
    Abstract: Information stored in an IC card which can be set to a block state, where any functions permitted to a user authority holder is not effective and an unblock password is required to set the IC card back to an initial state, is more secured than that stored in an IC card without the block state. The IC card of the present invention is further provided with a counter counting the number of incorrect unblock passwords, and is set to a more secured state of operation where only administrative authority holder can release the IC card.
    Type: Application
    Filed: December 12, 2001
    Publication date: June 13, 2002
    Applicant: NTT DoCoMo, Inc.
    Inventors: Hidetoshi Ishikawa, Yukio Yamauchi, Kanehiro Imai, Akihiro Higashi
  • Publication number: 20010050401
    Abstract: In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is in contact with a gate insulating film and is contained at a high concentration in the second semiconductor layer which is not in contact with the gate insulating film. Accordingly, by existence of the first semiconductor layer is which the impurity is not doped, the impurity is prevented from penetrating through the gate insulating film from the gate electrode and diffusing into the channel forming region. Also, by existence of the second semiconductor layer in which high concentration impurity is doped, the gate electrode has low resistance.
    Type: Application
    Filed: June 29, 2001
    Publication date: December 13, 2001
    Inventor: Yukio Yamauchi
  • Patent number: 6259141
    Abstract: In an insulated gate field effect semiconductor device, the gate electrode formed on the gate insulating film includes the first and second semiconductor layers as a double layer. An impurity for providing one conductivity type is not contained in first semiconductor layer which is in contact with a gate insulating film and is contained at a high concentration in the second semiconductor layer which is not in contact with the gate insulating film. Accordingly, by existence of the first semiconductor layer is which the impurity is not doped, the impurity is prevented from penetrating through the gate insulating film from the gate electrode and diffusing into the channel forming region. Also, by existence of the second semiconductor layer in which high concentration impurity is doped, the gate electrode has low resistance.
    Type: Grant
    Filed: November 15, 1999
    Date of Patent: July 10, 2001
    Assignee: Semiconductor Energy Labortary Co., Ltd.
    Inventor: Yukio Yamauchi
  • Patent number: 6160272
    Abstract: A semiconductor device is formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate. The semiconductor device is used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed. A source electrode has a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance. The source electrode is electrically coupled to the source region. A drain electrode has a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance. The drain electrode is electrically coupled to the drain region. An insulation layer is formed on the active layer. A gate electrode is formed on the insulation layer.
    Type: Grant
    Filed: December 9, 1997
    Date of Patent: December 12, 2000
    Assignees: TDK Corporation, Semiconductor Energy Laboratory Co. Ltd
    Inventors: Michio Arai, Yukio Yamauchi