Abstract: A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.

Abstract: An aqueous dispersion for chemical mechanical polishing is provided, which includes water and a resin particle. The resin particles accompany with a projection having a curvature radius ranging from 10 nm to 1.65 ?m on a surface. The maximum length of the resin particles is not more than 5 ?m and is 2.5 to 25 times as large as the curvature radius.

Abstract: Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.

Abstract: A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.

Abstract: A method of manufacturing a semiconductor device includes depositing a SiO2 film on the substrate having formed thereon a wiring pattern; coating a SOG film on the SiO2 film; and polishing the SOG film using a slurry containing cerium oxide and cationic surfactant with a chemical-mechanical polishing process.

Abstract: A substance to be polished made of a silicon oxide film formed on a semiconductor substrate is chemically and mechanically polished and planarized by bringing the substance to be polished into contact with a polishing pad having a modulus of elasticity within a range of 400 to 600 megapascals and by relatively sliding the substance to be polished and the polishing pad, in a condition that a polishing pressure is within a range of 50 to 200 hectopascals and that a rotation number of the polishing pad is within a range of 10 to 80 rpm, and in a state that a polishing slurry containing cerium oxide particles and an anionic surfactant is supplied to the polishing pad.

Abstract: A chemical mechanical polishing method comprises polishing an organic film using a slurry including polymer particles having a surface functional group and a water-soluble polymer.

Abstract: A method for manufacturing a semiconductor device is provided, which includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a first slurry containing first resin particles and a water-soluble polymer to planarize a surface of the organic film precursor, and polishing the organic film precursor where the surface is planarized using a second slurry containing second resin particles and a water-soluble polymer to leave the organic film precursor in the recess, thereby exposing the insulating film, an average particle diameter of the second resin particles being smaller than that of the first resin particles.

Abstract: A method for manufacturing a semiconductor device is provided, the method includes forming a coated film by coating a solution containing a solvent and an organic component above an insulating film located above a semiconductor substrate and having a recess, baking the coated film at a first temperature which does not accomplish cross-linking of the organic component to obtain an organic film precursor, polishing the organic film precursor using a slurry containing resin particles to leave the organic film precursor in the recess, baking the left organic film precursor at a second temperature which is higher than the first temperature to remove the solvent to obtain a first organic film embedded in the recess, forming a second organic film on the insulating film, thereby obtaining an underlying film, forming an intermediate layer and a resist film successively above the underlying film, and subjecting the resist film to patterning exposure.

Abstract: Disclosed is a method of manufacturing a semiconductor device, which includes forming an insulating film above a semiconductor substrate having a recess and stopper film formed above the semiconductor substrate excluding the recess, thereby filling the recess with the insulating film, performing a first polishing by polishing the insulating film by means of a chemical mechanical polishing method using a first polishing liquid containing cerium oxide and first anionic surfactant, thereby obtaining a flattened surface, and performing a second polishing by polishing the flattened insulating film using a second polishing liquid containing cerium oxide and a second anionic surfactant having a smaller molecular weight than that of the first anionic surfactant under a polishing condition which differs from that of the first polishing, thereby exposing the stopper film.

Abstract: There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 ?m, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 ?m, and a surfactant having a hydrophilic moiety.

Abstract: Disclosed is a CMP slurry comprising an abrasive grain, and a mixed surfactant comprising a first polyether type nonionic surfactant having an HLB value ranging from 3 to 9 at room temperature, and a second polyether type nonionic surfactant having an HLB value ranging from 10 to 20 at room temperature.

Abstract: There is disclosed a chemical mechanical polishing method of an organic film comprising forming the organic film above a semiconductor substrate, contacting the organic film formed above the semiconductor substrate with a polishing pad attached to a turntable, and dropping a slurry onto the polishing pad to polish the organic film, the slurry being selected from the group consisting of a first slurry and a second slurry, the first slurry comprising a resin particle having a functional group selected from the group consisting of an anionic functional group, a cationic functional group, an amphoteric functional group and a nonionic functional group, and having a primary particle diameter ranging from 0.05 to 5 ?m, the first slurry having a pH ranging from 2 to 8, and the second slurry comprising a resin particle having a primary particle diameter ranging from 0.05 to 5 ?m, and a surfactant having a hydrophilic moiety.

Abstract: Disclosed is a method of manufacturing a semiconductor device comprising forming an insulating film above a substrate, forming a recess in the insulating film, successively forming an underlying layer, an immediate layer and a resist film above the insulating film having the recess formed thereon, the underlying layer being formed by a process comprising forming a first organic film above the insulating film, chemically mechanically polishing the first organic film to expose a surface of the insulating film and to remain the first organic film selectively in the recess, and forming a second organic film above the insulating film and above the first organic film, and subjecting the resist film to patterning exposure.

Abstract: A chemically mechanically polishing method is provided, which includes slide-contacting a polishing film with a polishing pad while feeding a first chemical liquid and a second chemical liquid to the polishing pad. The first chemical liquid contains an electrolyte and bubbles having a diameter ranging from 10 nm to 1000 ?m, and the second chemical liquid contains abrasive particles.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.

Abstract: There is proposed a polishing method. The method includes feeding a slurry onto a polishing pad, press-contacting a semiconductor substrate held on a polishing head with the polishing pad, the semiconductor substrate having an organic film thereon, and chemically mechanically polishing the organic film by repeating a sequence of rotation and halt of rotation of the polishing pad and the polishing head.

Abstract: Disclosed is a CMP slurry comprising a first colloidal particle having a primary particle diameter ranging from 5 nm to 30 nm and an average particle diameter of d1, the first colloidal particle being incorporated in an amount of w1 by weight and a second colloidal particle having a primary particle diameter larger than that of the first colloidal particle and an average particle diameter of d2, the second colloidal particle being formed of the same material as that of the first colloidal particle and incorporated in an amount of w2 by weight, wherein d1, d2, w1 and w2 are selected to concurrently meet following conditions (A) and (B) excluding situations where d1, d2, w1 and w2 concurrently meet following conditions (C) and (D): 3?d2/d1?8??(A) 0.7?w1/(w1+w2)?0.97??(B) 3?d2/d1?5??(C) 0.7?w1/(w1+w2)?0.9.

Abstract: A chemical mechanical polishing method includes bringing a body to be polished into contact with a polishing pad mounted on a rotating polishing table while feeding a polishing slurry to the polishing pad. The polishing pad is formed of a laminate comprising a first pad layer in contact with the body, and a second pad layer positioned on a side of the polishing table with a water-proof film being interposed therebetween wherein the first pad layer is provided with a pad-cooling hole reaching the second pad layer and the second pad layer is provided with a cooling trench radially disposed to interconnect with the pad-cooling hole. The polishing slurry is fed to a surface of the first pad layer to polish the body, while permitting part of the polishing slurry to pass through the pad-cooling hole to the cooling trench.

Abstract: A method for manufacturing a semiconductor device is provided. The method includes successively forming a first silicon film and a mask film above a semiconductor substrate through a gate insulating film, forming a plurality of trenches in the first silicon film and in the mask film to a depth to reach the semiconductor substrate, filling the plurality of trenches with the silicon oxide film, removing the mask film to expose the first silicon film existing between the silicon oxide films, selectively growing a second silicon film on the first silicon film, planarizing the second silicon film using an alkaline slurry exhibiting a pH of 13 or less and containing abrasive grains and a cationic surfactant, thereby obtaining a floating gate electrode film comprising the first and second silicon films, forming an interelectrode insulating film on the entire surface, and forming a control gate electrode film on the interelectrode insulating film.