Abstract: A radio-frequency module includes a mounting substrate and first and second power amplifiers. The first and second power amplifiers are each mounted on one main surface of the mounting substrate. The first power amplifier includes a first input terminal and a first outer periphery. The first outer periphery includes a first edge section. The second power amplifier includes a second input terminal and a second outer periphery. The second outer periphery includes a second edge section. The second edge section opposes the first edge section in a first direction. The first input terminal is disposed in the first edge section of the first power amplifier. The second input terminal is disposed in the second edge section of the second power amplifier. The first and second input terminals do not overlap each other in the first direction.

Abstract: A radio-frequency module includes a hybrid filter for 5th Generation New Radio (5G-NR) n77, a filter for 5G-NR n79, power amplifiers, a third inductor coupled to the power amplifier, and a fourth inductor coupled to a power amplifier. When a module substrate is viewed in plan view, the power amplifiers are disposed in a first quadrant, the third inductor and the fourth inductor are disposed in a second quadrant, the hybrid filter and the filter are disposed in a third quadrant, the power amplifier is disposed closer to a reference point than the power amplifier, the third inductor is disposed closer to the reference point than the fourth inductor, and the hybrid filter is disposed closer to the reference point than the filter.

Abstract: A radio-frequency module includes a module substrate, a hybrid filter for 5th Generation New Radio (5G-NR) n77 including a first acoustic wave resonator element, a first inductor, and a first capacitor, a filter for 5G-NR n79 including a second acoustic wave resonator element and a second inductor, power amplifiers, a third inductor coupled between the power amplifier and the hybrid filter, and a fourth inductor coupled between the power amplifier and the filter. The first inductor, the second inductor, the third inductor, and the fourth inductor are disposed at a major surface or inside the module substrate. The distance between the first inductor and the third inductor is larger than the distance between the second inductor and the fourth inductor.

Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a first power amplifier disposed on the first principal surface and configured to amplify a transmission signal in a first frequency band; a second power amplifier disposed on the first principal surface and configured to amplify a transmission signal in a second frequency band different from the first frequency band; and a switch disposed on the second principal surface and connected to an output terminal of the first power amplifier and an output terminal of the second power amplifier.

Abstract: A radio-frequency module includes a mounting board having first and second major surfaces opposite to each other and a duplexer including a transmit filter coupled to a node and a receive filter coupled to the node. The transmit filter is mounted on the first major surface, and the receive filter is mounted on the second major surface. When the mounting board is viewed in a plan view, a footprint of the transmit filter at least partially overlaps a footprint of the receive filter.

Abstract: A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, a switch for connecting and disconnecting an antenna connection terminal and the hybrid filter, and a coupler disposed on a path linking the antenna connection terminal and the switch. The first acoustic wave resonator is disposed on the main surface, the switch is included in a semiconductor IC disposed on the main surface, the coupler is disposed inside the module substrate, and in plan view of the module substrate, the semiconductor IC at least partially overlaps the first acoustic wave resonator, and the semiconductor IC and the coupler at least partially overlaps.

Abstract: A radio-frequency module includes a module substrate having main surfaces opposite to each other, a hybrid filter having a first acoustic wave resonator, a first inductor, and a first capacitor, and a first radio-frequency component, wherein a pass band width of the hybrid filter is greater than a resonant band width of the first acoustic wave resonator, one of the first acoustic wave resonator, the first inductor, and the first capacitor is disposed on the main surface, and the first radio-frequency component is disposed on the main surface.

Abstract: A radio-frequency module includes a first power amplifier, a second power amplifier, a switch, a plurality of first filters, and a second filter. The first power amplifier amplifies a transmission signal of a first frequency band and outputs the amplified transmission signal. The second power amplifier amplifies a transmission signal of a second frequency band and outputs the amplified transmission signal. The pass bands of the plurality of first filters are contained within the first frequency band. The pass band of the second filter is contained within the second frequency band. The second power amplifier has a greater output power level than the first power amplifier. The first output terminal of the first power amplifier is switchably connectable to the plurality of first filters via the switch. The second output terminal of the second power amplifier is connected to the second filter without the switch interposed therebetween.

Abstract: A radio-frequency module includes a mounting substrate having a first main surface; a first power amplifier that is mounted on the first main surface and that amplifies a first transmission signal in a first frequency band; a second power amplifier that is mounted on the first main surface and that amplifies a second transmission signal in a second frequency band different from the first frequency band; a first output matching circuit that is mounted on the first main surface and that receives the first transmission signal amplified by the first power amplifier; and a second output matching circuit that is mounted on the first main surface and that receives the second transmission signal amplified by the second power amplifier. The first output matching circuit and the second output matching circuit are mounted along a second direction intersecting with the first direction.

Abstract: The high frequency module includes a mounting substrate, a circuit component, a resin layer, and a shield layer. The mounting substrate has a first main surface and a second main surface that face each other. The circuit component is mounted on the first main surface of the mounting substrate. The resin layer is disposed on the first main surface of the mounting substrate and covers at least part of an outer peripheral surface of the circuit component. The shield layer covers at least part of the resin layer and a main surface of the circuit component that is far from the mounting substrate. The high frequency module has a gap at at least one of a position between the circuit component and the resin layer, a position between the circuit component and the shield layer, a position inside the resin layer, and a position inside the shield layer.

Abstract: A high-frequency module includes: a module substrate that has major surfaces that face each other; a plurality of post electrodes placed on the major surface; and a power amplification component placed on the major surface. The power amplification component includes: a base material that has major surfaces and that face each other, the major surface being located between the major surface and the major surface; an amplification transistor formed on a side of the major surface of the base material; and a metal electrode placed on the major surface and connected to the amplification transistor.

Abstract: A hybrid filter includes a module substrate having a major surface and a major surface that are opposite to each other, acoustic wave resonator elements disposed at the module substrate, inductors disposed at the module substrate, and a capacitor disposed at the module substrate. The pass band of the hybrid filter is wider than the resonance band width of the acoustic wave resonator elements. One of the acoustic wave resonator elements, the inductors, and the capacitor is a first circuit element, and the first circuit element is disposed at the major surface. Another of the acoustic wave resonator elements, the inductors, and the capacitor is a second circuit element, and the second circuit element is disposed at the major surface.

Abstract: A high-frequency module includes: a module substrate that has major surfaces that face each other; a resin member for covering at least a part of the major surface; a shield electrode layer for covering at least a part of a surface of the resin member; a plurality of post electrodes placed on the major surface; a power amplification component placed on the major surface; and a first metal electrode (for example, a shield electrode layer). The power amplification component includes: a base material that has major surfaces that face each other, the major surface being located between the major surface and the major surface; and an amplification transistor formed on the base material. The first metal electrode is placed on the major surface and is in contact with the shield electrode layer.

Abstract: A radio frequency module includes a module substrate having major surfaces that face each other, a first base part that is at least partially comprised of a first semiconductor material and in which an electronic circuit is formed, a second base part that is at least partially comprised of a second semiconductor material different from the first semiconductor material and in which a power amplifier is formed, and a switch connected to an output terminal of the power amplifier. The first base part is disposed on or over the major surface; the second base part is disposed between the module substrate and the first base part, is joined to the first base part, and is connected to the major surface via an electrode; and the switch is disposed on or over the major surface.

Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit, a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a high thermal conductive member that has at least a part formed of a high thermal conductive material having a thermal conductivity higher than the first semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the high thermal conductive member overlaps at least a part of the first base and at least a part of the second base in plan view. The high thermal conductive member is in contact with the first base and the second base.

Abstract: A radio-frequency module includes a module substrate having main surfaces facing each other, a transmission filter that has a bottom surface and a top surface facing each other and passes a radio-frequency signal, and an external connection terminal disposed on the main surface. The bottom surface faces the main surface and is disposed closer to the main surface than the top surface. The radio-frequency module further includes a metal electrode joined to the top surface.

Abstract: The radio frequency module includes a module substrate, an electronic component disposed on a main surface, a resin member covering at least part of the main surface and at least part of a side surface of the electronic component, and a metal shield layer that is formed on a surface of the resin member and is set to a ground potential. The electronic component has a top surface in contact with the metal shield layer, a bottom surface facing the main surface, a circuit portion formed at a position closer to the bottom surface than to the top surface, and a metal layer formed between the metal shield layer and the circuit portion. The metal layer is a barrier metal.

Abstract: An integrated circuit includes a first base that has at least a part formed of a first semiconductor material and that includes an electric circuit (for example, a control circuit or a switching circuit), a second base that has at least a part formed of a second semiconductor material having a thermal conductivity lower than the first semiconductor material and that includes a power amplifier circuit, and a low thermal conductive member that has at least a part formed of a low thermal conductive material having a thermal conductivity lower than the second semiconductor material and that is disposed between the electric circuit and the power amplifier circuit. At least a part of the first base overlaps at least a part of the second base in plan view.

Abstract: A radio-frequency module includes a first base made of a first semiconductor material; a second base that is made of a second semiconductor material having a thermal conductivity lower than that of the first semiconductor material and which includes a power amplifier circuit; a third base including a transmission filter circuit; and a module substrate having a main surface on which the first base, the second base, and the third base are arranged. The first base is joined to the main surface via an electrode. The second base is arranged between the module substrate and the first base in a sectional view and is joined to the main surface via an electrode. At least part of the first base is overlapped with at least part of the second base and at least part of the third base in a plan view.

Abstract: A radio-frequency module includes a first power amplifier, a second power amplifier, a switch, a plurality of first filters, and a second filter. The first power amplifier amplifies a transmission signal of a first frequency band and outputs the amplified transmission signal. The second power amplifier amplifies a transmission signal of a second frequency band and outputs the amplified transmission signal. The pass bands of the plurality of first filters are contained within the first frequency band. The pass band of the second filter is contained within the second frequency band. The second power amplifier has a greater output power level than the first power amplifier. The first output terminal of the first power amplifier is switchably connectable to the plurality of first filters via the switch. The second output terminal of the second power amplifier is connected to the second filter without the switch interposed therebetween.