Patents by Inventor Yumiko Ohno
Yumiko Ohno has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7189631Abstract: It is an object of the present invention to provide a peeling method that causes no damage to a layer to be peeled and to allow not only a layer to be peeled with a small surface area but also a layer to be peeled with a large surface area to be peeled entirely. Further, it is also an object of the present invention to bond a layer to be peeled to various base materials to provide a lighter semiconductor device and a manufacturing method thereof. Particularly, it is an object to bond various elements typified by a TFT, (a thin film diode, a photoelectric conversion element comprising a PIN junction of silicon, or a silicon resistance element) to a flexible film to provide a lighter semiconductor device and a manufacturing method thereof.Type: GrantFiled: October 29, 2003Date of Patent: March 13, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
-
Patent number: 7180093Abstract: The object is to provide a lightened semiconductor device and a manufacturing method thereof by pasting a layer to be peeled to various base materials. In the present invention, a layer to be peeled is formed on a substrate, then a seal substrate provided with an etching stopper film is pasted with a binding material on the layer to be peeled, followed by removing only the seal substrate by etching or polishing. The remaining etching stopper film is functioned as a blocking film. In addition, a magnet sheet may be pasted as a pasting member.Type: GrantFiled: October 31, 2003Date of Patent: February 20, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toru Takayama, Junya Maruyama, Yumiko Ohno, Masakazu Murakami, Toshiji Hamatani, Hideaki Kuwabara, Shunpei Yamazaki
-
Publication number: 20070032042Abstract: A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more.Type: ApplicationFiled: October 4, 2006Publication date: February 8, 2007Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Takuya Tsurume, Hideaki Kuwabara
-
Patent number: 7169636Abstract: It is an object of the present invention to provide a light emitting device having a structure wherein oxygen and moisture are prevented from reaching to the light emitting device, and to provide a manufacturing method thereof. It is another object of the present invention to seal a light emitting device in fewer steps without encapsulating a desiccant. The present invention provides a structure in which a pixel region 13 is surrounded by a first sealing material (having higher viscosity than a second sealing material) 16 including a spacer (filler, minute particles and/or the like) which maintains a gap between the two substrates, filled with a few drops of the transparent second sealing material 17a which is spread in the region; and sealed by using the first sealing material 16 and the second sealing material 17.Type: GrantFiled: December 12, 2003Date of Patent: January 30, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junya Maruyama, Toru Takayama, Yumiko Ohno
-
Patent number: 7164151Abstract: The present invention intends to realize a narrow frame of a system on panel. In addition to this, a system mounted on a panel is intended to make higher and more versatile in the functionality. In the invention, on a panel on which a pixel portion (including a liquid crystal element, a light-emitting element) and a driving circuit are formed, integrated circuits that have so far constituted an external circuit are laminated and formed. Specifically, of the pixel portion and the driving circuit on the panel, on a position that overlaps with the driving circuit, any one kind or a plurality of kinds of the integrated circuits is formed by laminating according to a transcription technique.Type: GrantFiled: February 10, 2004Date of Patent: January 16, 2007Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Yasuyuki Arai, Noriko Shibata
-
Patent number: 7147740Abstract: An object of the present invention is to provide a method of transferring an object to be peeled onto a transferring member in a short time without imparting damage to the object to be peeled within a laminate. Also, another object of the present invention is to provide a method of manufacturing a semiconductor device in which a semiconductor element manufactured on a substrate is transferred onto a transferring member, typically, a plastic substrate. The methods are characterized by including: forming a peeling layer and an object to be peeled on a substrate; bonding the object to be peeled and a support through a two-sided tape; peeling the object to be peeled from the peeling layer by using a physical method, and then bonding the object to be peeled onto a transferring member; and peeling the support and the two-sided tape from the object to be peeled.Type: GrantFiled: May 16, 2003Date of Patent: December 12, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toru Takayama, Yuugo Goto, Junya Maruyama, Yumiko Ohno
-
Publication number: 20060246636Abstract: To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.Type: ApplicationFiled: June 30, 2006Publication date: November 2, 2006Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Keitaro Imai, Toru Takayama, Yuugo Goto, Junya Maruyama, Yumiko Ohno
-
Patent number: 7122445Abstract: A peeling method is provided which does not cause damage to a layer to be peeled, and the method enables not only peeling of the layer to be peeled having a small area but also peeling of the entire layer to be peeled having a large area at a high yield. Further, there are provided a semiconductor device, which is reduced in weight through adhesion of the layer to be peeled to various base materials, and a manufacturing method thereof. In particular, there are provided a semiconductor device, which is reduced in weight through adhesion of various elements, typically a TFT, to a flexible film, and a manufacturing method thereof. A metal layer or nitride layer is provided on a substrate; an oxide layer is provided contacting with the metal layer or nitride layer; then, a base insulating film and a layer to be peeled containing hydrogen are formed; and heat treatment for diffusing hydrogen is performed thereto at 410° C. or more.Type: GrantFiled: July 15, 2003Date of Patent: October 17, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno, Takuya Tsurume, Hideaki Kuwabara
-
Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
Publication number: 20060220211Abstract: According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 ?m deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 ?m, preferably at most 2 ?m by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.Type: ApplicationFiled: May 25, 2006Publication date: October 5, 2006Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno, Koichiro Tanaka -
Publication number: 20060214306Abstract: A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 ?m which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 ?m which is separated from another substrate to the above device formative layer, and, repeating such transferring process.Type: ApplicationFiled: May 25, 2006Publication date: September 28, 2006Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
-
Publication number: 20060186399Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.Type: ApplicationFiled: August 18, 2005Publication date: August 24, 2006Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
-
Publication number: 20060189097Abstract: The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means.Type: ApplicationFiled: April 25, 2006Publication date: August 24, 2006Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junya Maruyama, Yumiko Ohno, Toru Takayama, Yuugo Goto, Shunpei Yamazaki
-
Patent number: 7091070Abstract: To provide a method for manufacturing a semiconductor device including a transfer step that is capable of controlling the adhesiveness of a substrate and an element-formed layer in the case of separating the element-formed layer including a semiconductor element or an integrated circuit formed over the substrate from the substrate and bonding it to another substrate. An adhesive agent made of a good adhesiveness material is formed between the semiconductor element or the integrated circuit comprising plural semiconductor elements formed over the substrate (a first substrate) and the substrate, and thus it is possible to prevent a semiconductor element from peeling off a substrate in manufacturing the semiconductor element, and further, to make it easier to separate the semiconductor element from the substrate by removing the adhesive agent after forming the semiconductor element.Type: GrantFiled: February 27, 2004Date of Patent: August 15, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Keitaro Imai, Toru Takayama, Yuugo Goto, Junya Maruyama, Yumiko Ohno
-
Publication number: 20060163710Abstract: A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.Type: ApplicationFiled: March 14, 2006Publication date: July 27, 2006Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideaki Kuwabara, Toru Takayama, Yuugo Goto, Junya Maruyama, Yumiko Ohno, Shunpei Yamazaki
-
Patent number: 7067392Abstract: It is an object of the present invention to provide a semiconductor device capable of preventing deterioration due to penetration of moisture or oxygen, for example, a light-emitting apparatus having an organic light-emitting device that is formed over a plastic substrate, and a liquid crystal display apparatus using a plastic substrate. According to the present invention, devices formed on a glass substrate or a quartz substrate (a TFT, a light-emitting device having an organic compound, a liquid crystal device, a memory device, a thin-film diode, a pin-junction silicon photoelectric converter, a silicon resistance element, or the like) are separated from the substrate, and transferred to a plastic substrate having high thermal conductivity.Type: GrantFiled: October 16, 2003Date of Patent: June 27, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
-
Patent number: 7067926Abstract: A semiconductor chip having a plurality of device formative layers that are formed into an integrated thin film is provided by a technique for transferring. According to the present invention, a semiconductor chip that is formed into a thin film and that is highly integrated can be manufactured by transferring a device formative layer with a thickness of at most 50 ?m which is separated from a substrate into another substrate by a technique for transferring, and transferring another device formative layer with a thickness of at most 50 ?m which is separated from another substrate to the above device formative layer, and, repeating such transferring process.Type: GrantFiled: December 9, 2003Date of Patent: June 27, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno
-
Method for manufacturing semiconductor apparatus, and semiconductor apparatus and electric appliance
Patent number: 7056810Abstract: According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 ?m deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 ?m, preferably at most 2 ?m by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.Type: GrantFiled: December 8, 2003Date of Patent: June 6, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Toru Takayama, Junya Maruyama, Yumiko Ohno, Koichiro Tanaka -
Patent number: 7045442Abstract: The present invention is a separation method for easy separation of an allover release layer with a large area. Further, the present invention is the separating method that is not subjected to restrictions in the use of substrates, such as a kind of substrate, during forming a release layer. A separation method comprising the steps of forming a metal film, a first oxide, and a semiconductor film containing hydrogen in this order; and bonding a support to a release layer containing the first oxide and the semiconductor film and separating the release layer bonded to the support from a substrate provided with the metal layer by a physical means.Type: GrantFiled: December 22, 2003Date of Patent: May 16, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Junya Maruyama, Yumiko Ohno, Toru Takayama, Yuugo Goto, Shunpei Yamazaki
-
Patent number: 7037752Abstract: A technique for manufacturing a low-cost, small volume, and highly integrated semiconductor device is provided. A characteristic of the present invention is that a semiconductor element formed by using a semiconductor thin film is transferred over a semiconductor element formed by using a semiconductor substrate by a transfer technique in order to manufacture a semiconductor device. Compared with the conventional manufacturing method, mass production of semiconductor devices with lower cost and higher throughput can be realized, and production cost per semiconductor device can be reduced.Type: GrantFiled: December 22, 2003Date of Patent: May 2, 2006Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Hideaki Kuwabara, Toru Takayama, Yuugo Goto, Junya Maruyama, Yumiko Ohno, Shunpei Yamazaki
-
Publication number: 20050158936Abstract: An object of the present invention is to provide a semiconductor device formed by laser crystallization by which formation of grain boundaries in the TFT channel formation region can be avoided, and a method of manufacturing the same. Still another object of the present invention is to provide a method of designating the semiconductor device.Type: ApplicationFiled: February 25, 2005Publication date: July 21, 2005Applicant: Semiconductor Energy Laboratory Co., Ltd.Inventors: Kiyoshi Kato, Toshihiko Saito, Atsuo Isobe, Toru Takayama, Junya Maruyama, Yuugo Goto, Yumiko Ohno