Patents by Inventor Yun Hou

Yun Hou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10867954
    Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.
    Type: Grant
    Filed: November 15, 2017
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Chiang Ting, Chi-Hsi Wu, Shang-Yun Hou, Tu-Hao Yu, Chia-Hao Hsu, Ting-Yu Yeh
  • Patent number: 10866373
    Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.
    Type: Grant
    Filed: June 25, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Hsing-Kuo Hsia, Sung-Hui Huang, Kuan-Yu Huang, Kuo-Chiang Ting, Shang-Yun Hou, Chi-Hsi Wu
  • Patent number: 10866374
    Abstract: An optical bench including a substrate having a trench with the trench having an angled sidewall on which a reflective coating is provided. The optical bench also includes a first device and a waveguide positioned within the trench, a second device optically connected to the first device, and at least one active circuit electrically connected to the first device with the waveguide being positioned optically between the first device and the reflective coating. The optical bench also includes an optically transparent material that forms a first interface with the first device and a second interface with a first surface of the waveguide.
    Type: Grant
    Filed: April 10, 2017
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ying-Hao Kuo, Shang-Yun Hou, Wan-Yu Lee
  • Publication number: 20200381392
    Abstract: A package includes an Integrated Voltage Regulator (IVR) die, wherein the IVR die includes metal pillars at a top surface of the first IVR die. The package further includes a first encapsulating material encapsulating the first IVR die therein, wherein the first encapsulating material has a top surface coplanar with top surfaces of the metal pillars. A plurality of redistribution lines is over the first encapsulating material and the IVR die. The plurality of redistribution lines is electrically coupled to the metal pillars. A core chip overlaps and is bonded to the plurality of redistribution lines. A second encapsulating material encapsulates the core chip therein, wherein edges of the first encapsulating material and respective edges of the second encapsulating material are vertically aligned to each other. An interposer or a package substrate is underlying and bonded to the IVR die.
    Type: Application
    Filed: August 17, 2020
    Publication date: December 3, 2020
    Inventors: Chen-Hua Yu, Shang-Yun Hou, Yun-Han Lee
  • Patent number: 10854567
    Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a method of forming a semiconductor device, the method comprising forming a conductive pad in a first substrate, forming an interconnecting structure over the conductive pad and the first substrate, the interconnecting structure comprising a plurality of metal layers disposed in a plurality of dielectric layers, bonding a die to a first side of the interconnecting structure, and etching the first substrate from a second side of the interconnecting structure, the etching exposing a portion of the conductive pad.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: December 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shang-Yun Hou, Sao-Ling Chiu, Ping-Kang Huang, Wen-Hsin Wei, Wen-Chih Chiou, Shin-Puu Jeng, Bruce C. S. Chou
  • Patent number: 10847485
    Abstract: A method for forming a chip package structure is provided. The method includes bonding a chip to a first surface of a first substrate. The method includes forming a bump and a dummy bump over a second surface of the first substrate. The dummy bump is close to a first corner of the first substrate, and the dummy bump is wider than the bump. The method includes bonding the first substrate to a second substrate through the bump. The dummy bump is electrically insulated from the chip and the second substrate. The method includes forming a protective layer between the first substrate and the second substrate. The protective layer surrounds the dummy bump and the bump, and the protective layer is between the dummy bump and the second substrate.
    Type: Grant
    Filed: May 28, 2019
    Date of Patent: November 24, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Yu Huang, Sung-Hui Huang, Shang-Yun Hou
  • Publication number: 20200350221
    Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.
    Type: Application
    Filed: July 20, 2020
    Publication date: November 5, 2020
    Inventors: Tzuan-Horng Liu, Chen-Hua Yu, Hsien-Pin Hu, Tzu-Yu Wang, Wei-Cheng Wu, Shang-Yun Hou, Shin-Puu Jeng
  • Patent number: 10790254
    Abstract: A chip package structure is provided. The chip package structure includes a substrate having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip structure and a second chip structure over the first surface. The chip package structure includes a protective layer over the first surface and surrounding the first chip structure and the second chip structure. A portion of the protective layer is between the first chip structure and the second chip structure. The chip package structure includes a first anti-warpage bump over the second surface and extending across the portion of the protective layer. The chip package structure includes a conductive bump over the second surface and electrically connected to the first chip structure or the second chip structure. The first anti-warpage bump is wider than the conductive bump.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: September 29, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Yu Huang, Sung-Hui Huang, Shu-Chia Hsu, Leu-Jen Chen, Yi-Wei Liu, Shang-Yun Hou, Jui-Hsieh Lai, Tsung-Yu Chen, Chien-Yuan Huang, Yu-Wei Chen
  • Patent number: 10770365
    Abstract: An embodiment is a method including: attaching a first die to a first side of a first component using first electrical connectors, attaching a first side of a second die to first side of the first component using second electrical connectors, attaching a dummy die to the first side of the first component in a scribe line region of the first component, adhering a cover structure to a second side of the second die, and singulating the first component and the dummy die to form a package structure.
    Type: Grant
    Filed: December 10, 2018
    Date of Patent: September 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Hsien-Pin Hu, Jing-Cheng Lin, Szu-Wei Lu, Shang-Yun Hou, Wen-Hsin Wei, Ying-Ching Shih, Chi-Hsi Wu
  • Publication number: 20200278509
    Abstract: A method for forming a package structure is provided, including: disposing an optical component and a waveguide over a first substrate; forming a passivation layer over the first substrate and covering the optical component and the waveguide; removing a portion of the passivation layer to form a first opening; and disposing a reflector over the passivation layer, wherein a metal layer of the reflector is formed in the first opening.
    Type: Application
    Filed: May 14, 2020
    Publication date: September 3, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sung-Hui Huang, Jui-Hsieh Lai, Shang-Yun Hou
  • Publication number: 20200266076
    Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.
    Type: Application
    Filed: April 30, 2020
    Publication date: August 20, 2020
    Inventors: Tzu-Wei Chiu, Cheng-Hsien Hsieh, Hsien-Pin Hu, Kuo-Ching Hsu, Shang-Yun Hou, Shin-Puu Jeng
  • Publication number: 20200264231
    Abstract: A device includes a test pad on a chip. A first microbump has a first surface area that is less than a surface area of the test pad. A first conductive path couples the test pad to the first microbump. A second microbump has a second surface area that is less than the surface area of the test pad. A second conductive path couples the test pad to the second microbump.
    Type: Application
    Filed: May 8, 2020
    Publication date: August 20, 2020
    Inventors: Wei-Cheng Wu, Hsien-Pin Hu, Shang-Yun Hou, Shin-Puu Jeng, Chen-Hua Yu, Chao-Hsiang Yang
  • Patent number: 10748870
    Abstract: A package includes an Integrated Voltage Regulator (IVR) die, wherein the IVR die includes metal pillars at a top surface of the first IVR die. The package further includes a first encapsulating material encapsulating the first IVR die therein, wherein the first encapsulating material has a top surface coplanar with top surfaces of the metal pillars. A plurality of redistribution lines is over the first encapsulating material and the IVR die. The plurality of redistribution lines is electrically coupled to the metal pillars. A core chip overlaps and is bonded to the plurality of redistribution lines. A second encapsulating material encapsulates the core chip therein, wherein edges of the first encapsulating material and respective edges of the second encapsulating material are vertically aligned to each other. An interposer or a package substrate is underlying and bonded to the IVR die.
    Type: Grant
    Filed: December 18, 2018
    Date of Patent: August 18, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Shang-Yun Hou, Yun-Han Lee
  • Patent number: 10746923
    Abstract: A method includes forming silicon waveguide sections in a first oxide layer over a substrate, the first oxide layer disposed on the substrate, forming a routing structure over the first oxide layer, the routing structure including one or more insulating layers and one or more conductive features in the one or more insulating layers, recessing regions of the routing structure, forming nitride waveguide sections in the recessed regions of the routing structure, wherein the nitride waveguide sections extend over the silicon waveguide sections, forming a second oxide layer over the nitride waveguide sections, and attaching semiconductor dies to the routing structure, the dies electrically connected to the conductive features.
    Type: Grant
    Filed: June 24, 2019
    Date of Patent: August 18, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Hsing-Kuo Hsia, Kuo-Chiang Ting, Pin-Tso Lin, Sung-Hui Huang, Shang-Yun Hou, Chi-Hsi Wu
  • Patent number: 10734295
    Abstract: An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: August 4, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzuan-Horng Liu, Chen-Hua Yu, Hsien-Pin Hu, Tzu-Yu Wang, Wei-Cheng Wu, Shang-Yun Hou, Shin-Puu Jeng
  • Patent number: 10720401
    Abstract: A method includes bonding a first device die and a second device die to an interconnect die. The interconnect die includes a first portion over and bonded to the first device die, and a second portion over and bonded to the second device die. The interconnect die electrically connects the first device die to the second device die. The method further includes encapsulating the interconnect die in an encapsulating material, and forming a plurality of redistribution lines over the interconnect die.
    Type: Grant
    Filed: September 19, 2019
    Date of Patent: July 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuo-Chiang Ting, Chi-Hsi Wu, Shang-Yun Hou, Tu-Hao Yu, Chia-Hao Hsu, Ting-Yu Yeh
  • Publication number: 20200203300
    Abstract: A method for forming a chip package structure is provided. The method includes bonding a chip to a first surface of a first substrate. The method includes forming a bump and a dummy bump over a second surface of the first substrate. The dummy bump is close to a first corner of the first substrate, and the dummy bump is wider than the bump. The method includes bonding the first substrate to a second substrate through the bump. The dummy bump is electrically insulated from the chip and the second substrate. The method includes forming a protective layer between the first substrate and the second substrate. The protective layer surrounds the dummy bump and the bump, and the protective layer is between the dummy bump and the second substrate.
    Type: Application
    Filed: May 28, 2019
    Publication date: June 25, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Yu HUANG, Sung-Hui HUANG, Shang-Yun HOU
  • Publication number: 20200203299
    Abstract: A method for forming a chip package structure is provided. The method includes bonding a chip to a first surface of a first substrate. The method includes forming a dummy bump over a second surface of the first substrate. The first surface is opposite the second surface, and the dummy bump is electrically insulated from the chip. The method includes cutting through the first substrate and the dummy bump to form a cut substrate and a cut dummy bump. The cut dummy bump is over a corner portion of the cut substrate, a first sidewall of the cut dummy bump is substantially coplanar with a second sidewall of the cut substrate, and a third sidewall of the cut dummy bump is substantially coplanar with a fourth sidewall of the cut substrate.
    Type: Application
    Filed: May 7, 2019
    Publication date: June 25, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sung-Hui HUANG, Kuan-Yu HUANG, Shang-Yun HOU, Yushun LIN, Heh-Chang HUANG, Shu-Chia HSU, Pai-Yuan LI, Kung-Chen YEH
  • Publication number: 20200203186
    Abstract: A structure and a formation method of a package structure are provided. The method includes forming one or more solder elements over a substrate. The one or more solder elements surround a region of the substrate. The method also includes disposing a semiconductor die structure over the region of the substrate. The method further includes dispensing a polymer-containing liquid onto the region of the substrate. The one or more solder elements confine the polymer-containing liquid to being substantially inside the region. In addition, the method includes curing the polymer-containing liquid to form an underfill material.
    Type: Application
    Filed: July 12, 2019
    Publication date: June 25, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Yu Huang, Sung-Hui Huang, Jui-Hsieh Lai, Shang-Yun Hou
  • Patent number: 10665474
    Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming a semiconductor device. An embodiment is a semiconductor device comprising an interconnecting structure consisting of a plurality of thin film layers and a plurality of metal layers disposed therein, each of the plurality of metal layers having substantially a same top surface area, and a die comprising an active surface and a backside surface opposite the active surface, the active surface being directly coupled to a first side of the interconnecting structure. The semiconductor device further comprises a first connector directly coupled to a second side of the interconnecting structure, the second side being opposite the first side.
    Type: Grant
    Filed: March 22, 2019
    Date of Patent: May 26, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Wei Chiu, Cheng-Hsien Hsieh, Hsien-Pin Hu, Kuo-Ching Hsu, Shang-Yun Hou, Shin-Puu Jeng