Abstract: A semiconductor system may include a first semiconductor device configured to output a command signal, a first power supply voltage, a second power supply voltage and a third power supply voltage. The semiconductor system may include a second semiconductor device configured to drive an internal power supply voltage with the first power supply voltage in response to an internal command signal generated by decoding the command signal, generate first output data from first internal data by being supplied with the internal power supply voltage and the second power supply voltage, and generate second output data from second internal data by being supplied with the internal power supply voltage and the second power supply voltage.

Abstract: A semiconductor device includes a fuse unit comprising an array e-fuse and suitable for generating a boot-up end signal when a boot-up operation ends, a power generation unit suitable for generating a plurality of driving voltages for the fuse unit in response to a power-up signal indicating start of the boot-up operation and a power control unit suitable for controlling the generation of the driving voltages in response to the power-up signal and the boot-up end signal.

Abstract: An internal voltage generation circuit may include a pump controller and an internal voltage generator. The pump controller suitable for generating a first control signal enabled if a level of an internal voltage signal is lower than a target voltage level and a second control signal enabled if a level of the internal voltage signal is lower than the target voltage level after a predetermined period elapses from a point of time that the internal voltage signal is pumped. The internal voltage generator suitable for pumping the internal voltage signal with a first drivability in response to the first control signal and suitable for pumping the internal voltage signal with a second drivability in response to the second control signal.

Abstract: A pumping circuit includes a charge pump configured to generate a pumping voltage based on a first voltage in response to an oscillation signal, and an oscillator configured to provide a period-controlled oscillation signal based on the first voltage and a second voltage.

Abstract: A semiconductor system may include a first semiconductor device configured to output a command signal, a first power supply voltage, a second power supply voltage and a third power supply voltage. The semiconductor system may include a second semiconductor device configured to drive an internal power supply voltage with the first power supply voltage in response to an internal command signal generated by decoding the command signal, generate first output data from first internal data by being supplied with the internal power supply voltage and the second power supply voltage, and generate second output data from second internal data by being supplied with the internal power supply voltage and the second power supply voltage.

Abstract: A semiconductor device that includes a fuse array including a plurality of fuses, and suitable for operating using a fuse operation voltage in a fuse operation period, a first voltage generation block suitable for generating an internal voltage based on a first target level, a second voltage generation block suitable for generating the fuse operation voltage based on a second target level in the fuse operation period, and generating the fuse operation voltage based on the first target level outside the fuse operation period, and a connection control block suitable for disconnecting a line of the internal voltage and a line of the fuse operation voltage in the fuse operation period, and connecting the line of the internal voltage and the line of the fuse operation voltage outside the fuse operation period.

Abstract: Provided is a driver circuit of a semiconductor apparatus that is capable of operating with improved reliability and consuming less current. The driver circuit comprises a driver configured to generate an internal voltage using a power voltage in response to a control voltage and a controller configured to change the control voltage to a level higher than a level of the power voltage in response to a stand-by mode signal.

Abstract: A semiconductor device includes a power-up signal generation unit suitable for receiving a first power supply voltage and a second power supply voltage higher the first power supply voltage and generating a power-up signal when the first and second power supply voltage increase to reach target levels, respectively, a voltage level adjusting unit suitable for generating a third power supply voltage by adjusting a voltage level of the second power supply voltage, a boot-up signal generation unit suitable for generating a boot-up signal in response to the power-up signal, and a circuit operation unit suitable for performing a boot-up operation using the third power supply voltage in response to the boot-up signal.

Abstract: An internal voltage generation circuit may include a pump controller and an internal voltage generator. The pump controller suitable for generating a first control signal enabled if a level of an internal voltage signal is lower than a target voltage level and a second control signal enabled if a level of the internal voltage signal is lower than the target voltage level after a predetermined period elapses from a point of time that the internal voltage signal is pumped. The internal voltage generator suitable for pumping the internal voltage signal with a first drivability in response to the first control signal and suitable for pumping the internal voltage signal with a second drivability in response to the second control signal.

Abstract: A power control device may include a first power-supply voltage source configured to generate a first power-supply voltage, and a second power-supply voltage source configured to generate a second power-supply voltage having a voltage level different from that of the first power-supply voltage. The power control device may include a power driver configured to provide an internal power source in response to the second power-supply voltage, irrespective of the first power-supply voltage source and the second power-supply voltage source, during an initial power-up period.

Abstract: A semiconductor device that includes a fuse array including a plurality of fuses, and suitable for operating using a fuse operation voltage in a fuse operation period, a first voltage generation block suitable for generating an internal voltage based on a first target level, a second voltage generation block suitable for generating the fuse operation voltage based on a second target level in the fuse operation period, and generating the fuse operation voltage based on the first target level outside the fuse operation period, and a connection control block suitable for disconnecting a line of the internal voltage and a line of the fuse operation voltage in the fuse operation period, and connecting the line of the internal voltage and the line of the fuse operation voltage outside the fuse operation period.

Abstract: Provided is a driver circuit of a semiconductor apparatus that is capable of operating with improved reliability and consuming less current. The driver circuit comprises a driver configured to generate an internal voltage using a power voltage in response to a control voltage and a controller configured to change the control voltage to a level higher than a level of the power voltage in response to a stand-by mode signal.

Abstract: A protection circuit includes a high voltage detection unit configured to activate a high voltage detection signal where a first voltage exceeds a predetermined voltage; and a discharge unit coupled with the first voltage in response to the high voltage detection signal, and configured to discharge the first voltage to a ground voltage in response to a voltage level acquired by dropping the first voltage.

Abstract: A semiconductor device includes a power-up signal generation unit suitable for receiving a first power supply voltage and a second power supply voltage higher the first power supply voltage and generating a power-up signal when the first and second power supply voltage increase to reach target levels, respectively, a voltage level adjusting unit suitable for generating a third power supply voltage by adjusting a voltage level of the second power supply voltage, a boot-up signal generation unit suitable for generating a boot-up signal in response to the power-up signal, and a circuit operation unit suitable for performing a boot-up operation using the third power supply voltage in response to the boot-up signal.

Abstract: A semiconductor device includes a fuse unit comprising an array e-fuse and suitable for generating a boot-up end signal when a boot-up operation ends, a power generation unit suitable for generating a plurality of driving voltages for the fuse unit in response to a power-up signal indicating start of the boot-up operation and a power control unit suitable for controlling the generation of the driving voltages in response to the power-up signal and the boot-up end signal.

Abstract: A driving device is disclosed, which relates to a technology for reducing consumption of a leakage current unnecessary for a driver circuit. The driving device includes: a pre-driver configured to output a drive control signal upon receiving a power-supply voltage in response to an input signal, and change a voltage level of the drive control signal in response to a control signal so as to selectively provide the changed voltage level; an output driver configured to receive the power-supply voltage in response to the drive control signal, and output the received power-supply voltage to an output terminal; and a bulk-voltage controller configured to selectively control bulk-voltage levels of the pre-driver and the output driver in response to the control signal.

Abstract: A pumping circuit includes a charge pump configured to generate a pumping voltage based on a first voltage in response to an oscillation signal, and an oscillator configured to provide a period-controlled oscillation signal based on the first voltage and a second voltage.

Abstract: A driving device is disclosed, which relates to a technology for reducing consumption of a leakage current unnecessary for a driver circuit. The driving device includes: a pre-driver configured to output a drive control signal upon receiving a power-supply voltage in response to an input signal, and change a voltage level of the drive control signal in response to a control signal so as to selectively provide the changed voltage level; an output driver configured to receive the power-supply voltage in response to the drive control signal, and output the received power-supply voltage to an output terminal; and a bulk-voltage controller configured to selectively control bulk-voltage levels of the pre-driver and the output driver in response to the control signal.

Abstract: An initialization circuit includes an initialization control unit configured to generate a start pulse, which is generated after a power supply voltage reaches a target voltage level, in response to the power supply voltage and an external command, and an initialization execution unit configured to extract a fuse signal from a programmed fuse in response to the start pulse, and to output stored data when an external address corresponding to the fuse signal is inputted.

Abstract: A power-up signal generation circuit of a semiconductor apparatus includes a driver configured to generate a power-up signal in response to a first voltage. The power-up signal generation circuit may also comprise a power control unit configured to provide the first voltage or a second voltage as a power supply voltage to the driver in response to the power-up signal.