Abstract: Disclosed herein is an apparatus for opening and closing an air flap for a vehicle. The apparatus for opening and closing an air flap may include a coolant temperature sensor provided at an engine to measure a coolant temperature of the engine, a control unit comparing a measurement value input from the coolant temperature sensor with a reference value stored therein, thus outputting a control signal, an actuator rotating in response to the control signal of the control unit, a power transmission unit connected to the actuator to transmit rotating force of the actuator, and a flap unit installed in an opening of a front end module carrier, and being selectively movable in a vertical direction in the opening by power transmitted from the power transmission unit to the flap unit to open or close the opening, thus permitting or preventing an inflow of air into the cooling module.

Abstract: A method of recording bits on a ferroelectric medium using a scanning probe or a small conductive structure and a recording medium thereof, in which bit sizes can be decreased to increase data recording density as well as to reduce losses in reproduction signals. The method includes applying switching voltages to a lower electrode of the ferroelectric medium and the probe so as to write bits while approaching the probe to or bringing the probe into contact with a surface of the ferroelectric medium; and applying a base bias voltage, which is equal or smaller in magnitude and opposite in sign to the switching voltages between the switching voltages to make the probe equipotential with an upper portion of the record medium.

Abstract: A method of evaluating the sensitivity grade of an interior material used in vehicles comprises: evaluating sensitivity properties of an interior material before providing noise factors; evaluating sensitivity properties of the interior material after providing noise factors; averaging each of the sensitivity properties evaluated before the provision of noise factors and after the provision of noise factors to obtain the average value (safety factor) of each of the sensitivity properties; comparing the average value of each of the sensitivity properties with a preset target value of each of the sensitivity properties to compute a target value achievement level of each of the sensitivity properties; and determining the sensitivity grade of the interior material based on the sensitivity property with the lowest target value achievement level.

Abstract: There are provided methods of fabricating a metal silicate layer on a semiconductor substrate using an atomic layer deposition technique. The methods include performing a metal silicate layer formation cycle at least one time in order to form a metal silicate layer having a desired thickness. The metal silicate layer formation cycle includes an operation of repeatedly performing a metal oxide layer formation cycle K times and an operation of repeatedly performing a silicon oxide layer formation cycle Q times. K and Q are integers ranging from 1 to 10 respectively. The metal oxide layer formation cycle includes the steps of supplying a metal source gas to a reactor containing the substrate, exhausting the metal source gas remaining in a reactor to clean the inside of the reactor, and then supplying an oxide gas into the reactor.

Abstract: In a method of manufacturing a dielectric structure, after a first dielectric layer is formed on a substrate by using a metal oxide doped with silicon, the substrate is placed on a susceptor of a chamber. By treating the first dielectric layer with a plasma in controlling a voltage difference between the susceptor and a ground, a second dielectric layer is formed on the first dielectric layer. The second dielectric layer including a metal oxynitride doped with silicon having enough content of nitrogen is formed on the first dielectric layer. Therefore, dielectric properties of the dielectric structure comprising the first and the second dielectric layers can be improved and a leakage current can be greatly decreased. By adapting the dielectric structure to a gate insulation layer and/or to a dielectric layer of a capacitor or of a non-volatile semiconductor memory device, capacitances and electrical properties can be improved.

Abstract: A recording medium including a ferroelectric layer, a nonvolatile memory device including the recording medium and methods of wiring and reading data in the memory device. The recording medium includes: a lower electrode; a ferroelectric layer to which data is recorded, formed on the lower electrode; a barrier layer formed on the ferroelectric layer; and a semiconductor layer formed on the barrier layer. The nonvolatile memory device includes a probe that reads and writes the data. Furthermore, in the method of writing data, a writing voltage is applied between the probe, which contacts the semiconductor layer, and the lower electrode and, in the method of reading data, a state of a remanent polarization of the ferroelectric layer is determined by applying a reading voltage between the probe and the semiconductor layer.

Abstract: A semiconductor device includes first and second transistor devices. The first device includes a first substrate region, a first gate electrode, and a first gate dielectric. The first gate dielectric is located between the first substrate region and the first gate electrode. The second device includes a second substrate region, a second gate electrode, and a second gate dielectric. The second gate dielectric is located between the second substrate region and the second gate electrode. The first gate dielectric includes a first high-k layer having a dielectric constant of 8 or more. Likewise, the second gate dielectric includes a second high-k layer having a dielectric constant of 8 or more. The second high-k layer has a different material composition than the first high-k layer.

Abstract: An evaporative cooler including a unique supporting structure is described herein. The evaporative cooler comprises a frame member including a base portion for coupling with a water reservoir and an elevated portion extending upwardly from the base portion. Panels of the cooler housing are formed separately from the frame. Media is mounted to an elevated portion of the frame member or to at least one of the cooler housing panels. A blower is mounted to and supported at least partially by the elevated portion of the frame member. The blower is positioned to receive air entering through an inlet opening defined by cooler housing and exhaust cooled air toward an outlet opening defined by the cooler housing.

Abstract: A method of evaluating the sensitivity grade of an interior material used in vehicles comprises: evaluating sensitivity properties of an interior material before providing noise factors; evaluating sensitivity properties of the interior material after providing noise factors; averaging each of the sensitivity properties evaluated before the provision of noise factors and after the provision of noise factors to obtain the average value (safety factor) of each of the sensitivity properties; comparing the average value of each of the sensitivity properties with a preset target value of each of the sensitivity properties to compute a target value achievement level of each of the sensitivity properties; and determining the sensitivity grade of the interior material based on the sensitivity property with the lowest target value achievement level.

Abstract: A semiconductor device may include a semiconductor substrate having a first region and a second region. The nitrogen-incorporated active region may be formed within the first region. A first gate electrode may be formed on the nitrogen-incorporated active region. A first gate dielectric layer may be interposed between the nitrogen-incorporated active region and the first gate electrode. The first gate dielectric layer may include a first dielectric layer and a second dielectric layer. The second dielectric layer may be a nitrogen contained dielectric layer. A second gate electrode may be formed on the second region. A second gate dielectric layer may be interposed between the second region and the second gate electrode. The first gate dielectric layer may have the same or substantially the same thickness as the second gate dielectric layer, and the nitrogen contained dielectric layer may contact with the nitrogen-incorporated active region.

Abstract: High dielectric layers formed from layers of hafnium oxide, zirconium oxide, aluminum oxide, yttrium oxide, and/or other metal oxides and silicates disposed on silicon substrates or ozone oxide layers over silicon substrates may be nitrided and post thermally treated by oxidation, annealing, or a combination of oxidation and annealing to form high dielectric layers having superior mobility and interfacial characteristics.

Abstract: In a method of manufacturing a dielectric structure, after a tunnel oxide layer pattern is formed on a substrate, a floating gate is formed on the tunnel oxide layer. After a first dielectric layer pattern including a metal silicon oxide and a second dielectric layer pattern including a metal silicon oxynitride are formed, a control gate is formed on the dielectric structure. Since the dielectric structure includes at least one metal silicon oxide layer and at least one metal silicon oxynitride layer, the dielectric structure may have a high dielectric constant and a good thermal resistance. A non-volatile semiconductor memory device including the dielectric structure may have good electrical characteristics such as a large capacitance and a low leakage current.

Abstract: A brushless DC motor prevents disconnection of a magnetic flux and to minimize leakage of the magnetic flux, thereby reducing torque ripple. A plurality of magnetic flux-disconnection preventing holes are arranged in an outer periphery of a rotor core between installing holes into which magnets are fitted. The plurality of magnetic flux-disconnection preventing holes are symmetrical at both sides about a first line connecting a center of the rotor core to a center between the adjacent installing holes, and an angle between the first line and a second line connecting the center of the rotor core to an outermost end of the plurality of magnetic flux-disconnection preventing holes is about 15˜20°. A length between an outer periphery of the rotor core and an outer periphery of the plurality of magnetic flux-disconnection preventing holes is smaller than a gap between the rotor core and the stator.

Abstract: A method of recording bits on a ferroelectric medium using a scanning probe or a small conductive structure and a recording medium thereof, in which bit sizes can be decreased to increase data recording density as well as to reduce losses in reproduction signals. The method includes applying switching voltages to a lower electrode of the ferroelectric medium and the probe so as to write bits while approaching the probe to or bringing the probe into contact with a surface of the ferroelectric medium; and applying a base bias voltage, which is equal or smaller in magnitude and opposite in sign to the switching voltages between the switching voltages to make the probe equipotential with an upper portion of the record medium.