Patents by Inventor Yun Wei

Yun Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Increased optical path for long wavelength light by grating structure
    Patent number: 10930692
    Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
    Type: Grant
    Filed: November 4, 2019
    Date of Patent: February 23, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee
  • IMAGE SENSOR AND METHOD OF FORMING THE SAME
    Publication number: 20210020671
    Abstract: A back side illumination (BSI) image sensor is provided. The BSI image sensor includes a semiconductor substrate, a first dielectric layer, a reflective element, a second dielectric layer and a color filter layer. The semiconductor substrate has a front side and a back side. The first dielectric layer is disposed on the front side of the semiconductor substrate. The reflective element is disposed on the first dielectric layer, in which the reflective element has an inner sidewall contacting the first dielectric layer, and the inner sidewall has a zigzag profile. The second dielectric layer is disposed on the first dielectric layer and the reflective element. The color filter layer is disposed on the backside of the semiconductor substrate.
    Type: Application
    Filed: July 16, 2019
    Publication date: January 21, 2021
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Ying-Hao CHEN
  • PHYSIOLOGICAL INFORMATION DETECTION DEVICE AND PHYSIOLOGICAL INFORMATION DETECTION METHOD
    Publication number: 20210019881
    Abstract: The present invention provides a physiological information detection method for calculating a physiological value by using changes of a dynamic image. The detection method includes: acquiring detection data from a gray-scale value of the dynamic image, and transforming the detection data into frequency data. The detection method further includes: determining whether the frequency data meet a preset condition, and using a transformation model of a corresponding transformation combination accordingly to transform the frequency data into a physiological value. The present invention further provides a physiological information detection device applying the detection method.
    Type: Application
    Filed: January 2, 2020
    Publication date: January 21, 2021
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Bing-Fei WU, Yun-Wei CHU, Po-Wei HUANG, Meng-Liang CHUNG, Yin-Cheng TSAI
  • MECHANISMS FOR FORMING IMAGE SENSOR DEVICE
    Publication number: 20210013255
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate and a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. The image sensor device further includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter. In addition, the image sensor device includes a reflective element between the shielding layer and an edge of the light sensing region.
    Type: Application
    Filed: September 30, 2020
    Publication date: January 14, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Volume CHIEN, Yun-Wei CHENG, Shiu-Ko JANGJIAN, Zhe-Ju LIU, Kuo-Cheng LEE, Chi-Cherng JENG
  • INTERNET OF THINGS SYSTEM WITH PREDICTION OF FARMLAND SOIL STATUS AND METHOD FOR CREATING MODEL THEREOF
    Publication number: 20210004694
    Abstract: An IoT system includes a computing module for controlling an integral function of the system and including an analysis unit and a machine learning unit. The analysis unit is capable of operational analysis and creating a predictive model and creating a predictive model according to the data analyzed. The machine learning unit has an algorithm function to create a corresponding learning model. An IoT module is electrically connected to the computing module to serve as an intermediate role. At least one detection unit is electrically connected to the IoT module and disposed in soil to detect data of environmental and soil conditions and sends the data detected to the computing module for subsequent analysis.
    Type: Application
    Filed: October 20, 2019
    Publication date: January 7, 2021
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Wen-Liang Chen, Lung-Chieh Chen, Szu-Chia Chen, Wei-Han Chen, Chun-Yu Chu, Yu-Chi Shih, Yu-Ci Chang, Tzu-I Hsieh, Yen-Ling Chen, Li-Chi Peng, Meng-Zhan Lee, Jui-Yu Ho, Chi-Yao Ku, Nian-Ruei Deng, Yuan-Yao Chan, Erick Wang, Tai-Hsiang Yen, Shao-Yu Chiu, Jiun-Yi Lin, Yun-Wei Lin, Fung Ling Ng, Yi-Bing Lin, Chin-Cheng Wang
  • IMAGE SENSOR
    Publication number: 20200411575
    Abstract: An image sensor includes a substrate, a photosensitive unit in the substrate, a dielectric grid over the substrate, and a color filter over the photosensitive unit and surrounded by the dielectric grid. The dielectric grid has a first portion and a second portion over the first portion, and the second portion of the dielectric grid has a rounded top surface extending upwards from a sidewall of the first portion of the dielectric grid. The color filter has a first portion lower than a lowermost portion of the rounded top surface of the second portion of the dielectric grid and a second portion higher than the lowermost portion of the rounded top surface of the second portion of the dielectric grid.
    Type: Application
    Filed: September 11, 2020
    Publication date: December 31, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Yin-Chieh HUANG, Wan-Chen HUANG, Zhe-Ju LIU, Kuo-Cheng LEE, Chi-Cherng JENG
  • Protection ring for image sensors
    Patent number: 10879290
    Abstract: Some embodiments relate to a device array including a plurality of devices arranged in a semiconductor substrate. A protection ring circumscribes an outer perimeter of the device array. The protection ring includes a first ring neighboring the device array, a second ring circumscribing the first ring and meeting the first ring at a first p-n junction, and a third ring circumscribing the second ring and meeting the second ring at a second p-n junction. The first ring has a first width, the second ring has a second width, and the third ring has a third width. At least two of the first width, the second width, and the third width are different from one another.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: December 29, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng
  • Image sensor and method for fabricating the image sensor
    Patent number: 10872921
    Abstract: An image sensor and a method for fabricating the image sensor are provided. In the method for fabricating the image sensor, at first, a substrate having a first surface and a second surface opposite to the first surface is provided. Then, light-sensitive regions are formed in the substrate. Thereafter, transfer gate structures are formed on the first surface of the substrate. Then, the first surface of the substrate is formed to form recess structures on the light-sensitive regions. Thereafter, light-reflective layers are formed to cover the recess structures of the first surface of the substrate, in which the recess structures are filled with protrusion structures of the light-reflective layers. Further, the second surface of the substrate may be etched to form recess structures corresponding to the light-sensitive regions.
    Type: Grant
    Filed: August 30, 2018
    Date of Patent: December 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Hsin-Chi Chen
  • Back Side Illuminated Image Sensor with Deep Trench Isolation Structures and Self-Aligned Color Filters
    Publication number: 20200395395
    Abstract: A semiconductor image sensor includes a substrate having a first side and a second side that is opposite the first side. An interconnect structure is disposed over the first side of the substrate. A plurality of radiation-sensing regions is located in the substrate. The radiation-sensing regions are configured to sense radiation that enters the substrate from the second side. A plurality of isolation structures are each disposed between two respective radiation-sensing regions. The isolation structures protrude out of the second side of the substrate.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 17, 2020
    Inventors: Kuo-Cheng Lee, Yun-Wei Cheng, Yung-Lung Hsu, Hsin-Chi Chen
  • Heat dissipation structures
    Patent number: 10854530
    Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.
    Type: Grant
    Filed: July 31, 2019
    Date of Patent: December 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee, Ying-Hao Chen
  • Non-contact heartbeat rate measurement system, method and apparatus thereof
    Patent number: 10835135
    Abstract: A non-contact heartbeat rate measurement system includes an image sensor, a target region selecting module, a heartbeat signal calculating module, a spectrum analyzing module, a vibration detecting module, a heartbeat peak selecting module. When a signal quality indicator is greater than a threshold value, and a first peak with global highest signal intensity in a heartbeat spectrum is similar to a face vibration frequency, the heartbeat peak selecting module selects a second peak with local highest signal intensity from a part frequency band of the heartbeat spectrum as an output heartbeat frequency. A non-contact heartbeat rate measurement method and an apparatus are disclosed herein.
    Type: Grant
    Filed: April 24, 2019
    Date of Patent: November 17, 2020
    Assignee: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Bing-Fei Wu, Meng-Liang Chung, Tsong-Yang Tsou, Yun-Wei Chu, Kuan-Hung Chen, Po-Wei Huang, Yin-Yin Yang
  • Time controller and liquid crystal display apparatus thereof
    Patent number: 10825415
    Abstract: A time controller is able to convert and present the LCD display of gray levels within images with a brightness equal to that within the original images. The time controller alternates in operation between first and second modes of gamma correction, each for a specified time duration. In the first correction mode, the time controller corrects the original gray levels in a correction-positive manner and outputs first correction gray levels. In the second correction mode, the time controller corrects the original gray levels in a correction-negative manner, and outputs the second correction gray levels. The first correction gray level is equal to or larger than the second correction gray level, to correspond with original gray levels.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: November 3, 2020
    Assignee: Fitipower Integrated (Shenzhen) Inc.
    Inventors: Fu-Chuan Tsai, Yu-Chun Tsai, Chang Zhu, Hong-Yun Wei, Xiao-Jun Chen
  • IMAGE SENSOR HAVING ISOLATION STRUCTURE
    Publication number: 20200343282
    Abstract: A device including a semiconductive substrate having opposite first and second surfaces, a light-sensitive element in the semiconductive substrate, an isolation structure extending at least from the second surface of the semiconductive substrate to within the semiconductive substrate, and a color filter over the second surface of the semiconductive substrate. The isolation structure includes a dielectric fill and a first high-k dielectric layer wrapping around the dielectric fill.
    Type: Application
    Filed: July 11, 2020
    Publication date: October 29, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei CHENG, Chun-Wei CHIA, Chun-Hao CHOU, Kuo-Cheng LEE, Hsun-Ying HUANG
  • HIGH DIELECTRIC CONSTANT DIELECTRIC LAYER FORMING METHOD, IMAGE SENSOR DEVICE, AND MANUFACTURING METHOD THEREOF
    Publication number: 20200343279
    Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.
    Type: Application
    Filed: July 8, 2020
    Publication date: October 29, 2020
    Inventors: Tsung-Han Tsai, Horng-Huei Tseng, Chun-Hao Chou, Kuo-Cheng Lee, Yung-Lung Hsu, Yun-Wei Cheng, Hsin-Chieh Huang
  • Semiconductor device with a radiation sensing region and method for forming the same
    Patent number: 10818719
    Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.
    Type: Grant
    Filed: September 23, 2019
    Date of Patent: October 27, 2020
    Assignee: Taiwan Semicondutor Manufacturing Co., Ltd.
    Inventors: Tsung-Han Tsai, Yun-Wei Cheng, Kuo-Cheng Lee, Chun-Hao Chou, Yung-Lung Hsu
  • Increased optical path for long wavelength light by grating structure
    Patent number: 10804307
    Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.
    Type: Grant
    Filed: September 21, 2019
    Date of Patent: October 13, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Kuo-Cheng Lee
  • POLARIZERS FOR IMAGE SENSOR DEVICES
    Publication number: 20200321379
    Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.
    Type: Application
    Filed: June 22, 2020
    Publication date: October 8, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE
  • Mechanisms for forming image sensor device
    Patent number: 10797094
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate. The image sensor device further includes a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: October 6, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Volume Chien, Yun-Wei Cheng, Shiu-Ko Jangjian, Zhe-Ju Liu, Kuo-Cheng Lee, Chi-Cherng Jeng
  • Image sensor and method for manufacturing thereof
    Patent number: 10777592
    Abstract: An image sensor includes a substrate, a photosensitive unit, a first grid and a color filter. The photosensitive unit is located within the substrate. The first grid is located above the substrate, and the first grid has a first portion and a second portion above the first portion, wherein the second portion has a rounded top surface extending from a sidewall of the first portion of the first grid. The color filter is located above the photosensitive unit and in contact with the rounded top surface of the second portion of the first grid.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: September 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yun-Wei Cheng, Chun-Hao Chou, Yin-Chieh Huang, Wan-Chen Huang, Zhe-Ju Liu, Kuo-Cheng Lee, Chi-Cherng Jeng
  • USE OF BLOCKCHAIN BASED DISTRIBUTED CONSENSUS CONTROL
    Publication number: 20200286184
    Abstract: A system for the cryptographically-secure, autonomous control of devices comprising, connected to or remotely operating devices in an electrically powered network and the transaction of the benefits, costs or value created by or transacted through the devices in this electrically powered network.
    Type: Application
    Filed: April 14, 2020
    Publication date: September 10, 2020
    Inventors: Lawrence Orsini, Yun Wei, Joseph Lubin