Abstract: A semiconductor structure includes a substrate having a pixel array region and a first seal ring region, wherein the first seal ring region surrounds the pixel array region, and the first seal ring region includes a first seal ring. The semiconductor structure further includes a first isolation feature in the first seal ring region, wherein the first isolation feature is filled with a dielectric material, and the first isolation feature is a continuous structure surrounding the pixel array region. The semiconductor structure further includes a second isolation feature between the first isolation feature and the pixel array region, wherein the second isolation feature is filled with the dielectric material.

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.

Abstract: A method for forming a high dielectric constant (high-?) dielectric layer on a substrate including performing a pre-clean process on a surface of the substrate. A chloride precursor is introduced on the surface. An oxidant is introduced to the surface to form the high-? dielectric layer on the substrate. A chlorine concentration of the high-? dielectric layer is lower than about 8 atoms/cm3.

Abstract: A photodetector circuit includes a photodetector and a sensing circuit located over a substrate semiconductor layer having a doping of a first conductivity type. The photodetector includes a second-conductivity-type pinned photodiode layer that forms a p-n junction with the substrate semiconductor layer, at least one floating diffusion region that is laterally spaced from a periphery of the second-conductivity-type pinned photodiode layer, and at least one transfer gate electrode. At least two different operations may be performed by applying at least two different pulse patterns to the at least one transfer gate electrode. The at least two different pulse patterns differ from one another or from each other by at least one of pulse duration, pulse magnitude, and delay time between a control signal applied to the sensing circuit and pulse initiation at a respective one of the at least one transfer gate electrode.

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure surrounds a first portion of the light-sensing region, and the first isolation structure has a first end portion in the substrate. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure surrounds a second portion of the light-sensing region, the second isolation structure has a second end portion in the substrate, and the second end portion of the second isolation structure is closer to the front surface of the substrate than the first end portion of the first isolation structure.

Abstract: A method of forming a semiconductor device includes forming photodiodes extending from a front-side surface of a semiconductor layer into the semiconductor layer; forming transistors on the front-side surface of the semiconductor layer; forming an interconnect structure over the transistors, the interconnect structure comprising an inter-metal dielectric and metal lines in the inter-metal dielectric; etching first regions of a backside surface of the semiconductor layer to form trenches in the semiconductor layer and non-overlapping the photodiodes; after forming the trenches, etching second regions of the backside surface of the semiconductor layer to form pits in the semiconductor layer and overlapping the photodiodes; and depositing a dielectric material in the trenches and the pits.

Abstract: A method includes depositing a first reflective layer over a substrate. A first dielectric layer is deposited over the first reflective layer. A second dielectric layer is deposited over the first dielectric layer. The second dielectric layer, the first dielectric layer, and the first reflective layer are etched to form a grid isolation structure that defines a recess. The recess is filled with a color filter.

Abstract: Among other things, one or more support structures for integrated circuitry and techniques for forming such support structures are provided. A support structure comprises one or more trench structures, such as a first trench structure and a second trench structure formed around a periphery of integrated circuitry. In some embodiments, one or more trench structures are formed according to partial substrate etching, such that respective trench structures are formed into a region of a substrate. In some embodiments, one or more trench structures are formed according to discontinued substrate etching, such that respective trench structures comprise one or more trench portions separated by separation regions of the substrate. The support structure mitigates stress energy from reaching the integrated circuitry, and facilitates process-induced charge release from the integrated circuitry.

Abstract: The present disclosure relates to an image sensor with a pad structure formed during a front-end-of-line process. The pad structure can be formed prior to formation of back side deep trench isolation structures and metal grid structures. An opening is formed on a back side of the image sensor device to expose the embedded pad structure and to form electrical connections.

Abstract: A method for forming a light-sensing device is provided. The method includes forming a light-sensing region in a semiconductor substrate. The semiconductor substrate has a front surface and a light-receiving surface opposite to the front surface. The method also includes forming a first dielectric layer over the front surface and forming a second dielectric layer over the first dielectric layer. The second dielectric layer has a different refractive index than that of the first dielectric layer, and the first dielectric layer and the second dielectric layer together form a (or a part of a) light-reflective element. The method further includes partially removing the first dielectric layer and the second dielectric layer to form a contact opening. In addition, the method includes forming a conductive contact to partially (or completely) fill the contact opening.

Abstract: An image sensor device has a first number of first pixels disposed in a substrate and a second number of second pixels disposed in the substrate. The first number is substantially equal to the second number. A light-blocking structure disposed over the first pixels and the second pixels. The light-blocking structure defines a plurality of first openings and second openings through which light can pass. The first openings are disposed over the first pixels. The second openings are disposed over the second pixels. The second openings are smaller than the first openings. A microcontroller is configured to turn on different ones of the second pixels at different points in time.

Abstract: A back side illumination (BSI) image sensor is provided. The BSI image sensor includes a semiconductor substrate, a first dielectric layer, a reflective element, a second dielectric layer and a color filter layer. The semiconductor substrate has a front side and a back side. The first dielectric layer is disposed on the front side of the semiconductor substrate. The reflective element is disposed on the first dielectric layer, in which the reflective element has an inner sidewall contacting the first dielectric layer, and the inner sidewall has a zigzag profile. The second dielectric layer is disposed on the first dielectric layer and the reflective element. The color filter layer is disposed on the backside of the semiconductor substrate.

Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.

Abstract: A device including a semiconductive substrate having opposite first and second surfaces, a light-sensitive element in the semiconductive substrate, an isolation structure extending at least from the second surface of the semiconductive substrate to within the semiconductive substrate, and a color filter over the second surface of the semiconductive substrate. The isolation structure includes a dielectric fill and a first high-k dielectric layer wrapping around the dielectric fill.

Abstract: A semiconductor structure includes a photodetector, which includes a substrate semiconductor layer having a doping of a first conductivity type, a second-conductivity-type photodiode layer that forms a p-n junction with the substrate semiconductor layer, a floating diffusion region that is laterally spaced from the second-conductivity-type photodiode layer, and a transfer gate electrode including a lower transfer gate electrode portion that is formed within the substrate semiconductor layer and located between the second-conductivity-type photodiode layer and the floating diffusion region. The transfer gate electrode may laterally surround the p-n junction, and may provide enhanced electron transmission efficiency from the p-n junction to the floating diffusion region. An array of photodetectors may be used to provide an image sensor.

Abstract: An IC structure includes a substrate region having a first doping type and including an upper surface, first and second regions within the substrate region, each of the first and second regions having a second doping type opposite the first doping type, and a gate conductor including a plurality of conductive protrusions extending into the substrate region in a direction perpendicular to a plane of the upper surface. The conductive protrusions are electrically connected to each other, and at least a portion of each conductive protrusion is positioned between the first and second regions.

Abstract: The present invention provides a physiological information detection method for calculating a physiological value by using changes of a dynamic image. The detection method includes: acquiring detection data from a gray-scale value of the dynamic image, and transforming the detection data into frequency data. The detection method further includes: determining whether the frequency data meet a preset condition, and using a transformation model of a corresponding transformation combination accordingly to transform the frequency data into a physiological value. The present invention further provides a physiological information detection device applying the detection method.

Abstract: A driving method comprising: acquiring a first grayscale value of each of the plurality of pixels in a current display frame; acquiring an area identifier of each of the plurality of pixels and a light-intensity of a surrounding environment, the plurality of pixels comprising at least two kinds of area identifiers, each of the plurality of pixels having a light reflectivity, the area identifier of each of the plurality of pixels being set according to the light reflectivity; converting the first grayscale value of each of the plurality of pixels into a second grayscale value according to the area identifier and the light-intensity of the surrounding environment; and driving the display device to display images according to the second grayscale value of each of the plurality of pixels. The driver and the display device are also provided.