Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate including a front surface, a back surface opposite to the front surface, and a light-sensing region extending from the front surface into the semiconductor substrate. The image sensor device includes a light-blocking structure in the semiconductor substrate and surrounding the light-sensing region. The light-blocking structure includes a conductive light reflection structure and a light absorption structure, and the light absorption structure is between the conductive light reflection structure and the back surface. The image sensor device includes an insulating layer between the light-blocking structure and the semiconductor substrate.

Abstract: An image sensor with stress adjusting layers and a method of fabrication the image sensor are disclosed. The image sensor includes a substrate with a front side surface and a back side surface opposite to the front side surface, an anti-reflective coating (ARC) layer disposed on the back side surface of the substrate, a dielectric layer disposed on the ARC layer, a metal layer disposed on the dielectric layer, and a stress adjusting layer disposed on the metal layer. The stress adjusting layer includes a silicon-rich oxide layer. The concentration profiles of silicon and oxygen atoms in the stress adjusting layer are non-overlapping and different from each other. The image sensor further includes oxide grid structure disposed on the stress adjusting layer.

Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.

Abstract: An image sensor device is provided. The image sensor device includes a substrate having a front surface, a back surface, and a light-sensing region. The image sensor device includes a first isolation structure extending from the front surface into the substrate. The first isolation structure includes a first insulating layer and an etch stop layer, the first insulating layer extends from the front surface into the substrate, the etch stop layer is between the first insulating layer and the substrate, and the etch stop layer, the first insulating layer, and the substrate are made of different materials. The image sensor device includes a second isolation structure extending from the back surface into the substrate. The second isolation structure is in direct contact with the etch stop layer, the second isolation structure surrounds the light-sensing region, and the second isolation structure includes a light-blocking structure.

Abstract: A semiconductor device is operated for sensing incident light and includes a carrier, a device layer, and a semiconductor layer. The device layer is disposed on the carrier. The semiconductor layer is disposed on the device layer. The semiconductor layer includes light-sensing regions. The semiconductor layer has a first surface and a second surface opposite to the first surface that is adjacent to the device layer. The second surface has a lattice plane which is tilted with respect to a basal plane, and the semiconductor layer has various pit portions arranged on the second surface.

Abstract: A method for fabricating an image sensor device is provided. The method includes forming a plurality of photosensitive pixels in a substrate; depositing a dielectric layer over the substrate; etching the dielectric layer, resulting in a first trench in the dielectric layer and laterally surrounding the photosensitive pixels; and forming a light blocking structure in the first trench, such that the light blocking structure laterally surrounds the photosensitive pixels.

Abstract: A semiconductor structure includes a sensor chip. The sensor chip includes a pixel array region, a bonding pad region, and a periphery region surrounding the pixel array region. The semiconductor structure further includes a stress-releasing trench, wherein the stress-releasing trench is in the periphery region, and the stress-releasing trench fully surrounds a perimeter of the pixel array region and the bonding pad region.

Abstract: Power amplifier (PA) packages, such as Doherty PA packages, containing multi-path integrated passive devices (IPDs) are disclosed. In embodiments, the PA package includes a package body through which first and second signal amplification paths extend, a first amplifier die within the package body and positioned in the first signal amplification path, and a second amplifier die within the package body and positioned in the second signal amplification path. A multi-path IPD is further contained in the package body. The multi-path IPD includes a first IPD region through which the first signal amplification path extends, a second IPD region through which the second signal amplification path extends, and an isolation region formed in the IPD substrate a location intermediate the first IPD region and the second IPD region.

Abstract: An image sensor includes a substrate, a grid isolation structure, and a color filter. The substrate has a light-sensitive element therein. The grid isolation structure is above the substrate and includes a reflective layer, a first dielectric layer above the reflective layer, and a second dielectric layer above the first dielectric layer. The color filter is above the light-sensitive element and is surrounded by the grid isolation structure.

Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.

Abstract: A back side illumination (BSI) image sensor with a dielectric grid opening having a planar lower surface is provided. A pixel sensor is arranged within a semiconductor substrate. A metallic grid is arranged over the pixel sensor and defines a sidewall of a metallic grid opening. A dielectric grid is arranged over the metallic grid and defines a sidewall of the dielectric grid opening. A capping layer is arranged over the metallic grid, and defines the planar lower surface of the dielectric grid opening.

Abstract: The present invention discloses an automatic source-seeking indoor pollution purifying and removing device and method for airborne pollutants. The device comprises pollutant concentration sensors, a control unit, a position sensor, a power plant, a moving mechanism, a telescopic device, a pollutant collection hood, and a filtering and purifying device. The control unit can identify the actual release positions and hourly release rates of relevant pollutants according to the concentration data monitored by the pollutant concentration sensors, and can control the pollutant collection hood in the device to move to a designated position in a space, so as to realize the collection and removal of pollutants at the release position of the pollutants.

Abstract: A semiconductor structure includes a sensor wafer comprising a plurality of sensor chips on and within a substrate. Each of the plurality of sensor chips includes a pixel array region, a bonding pad region, and a periphery region. The periphery region is between adjacent to a scribe line, and the scribe line is between adjacent sensor chips of the plurality of sensor chips. Each of the plurality of sensor chips further includes a stress-releasing trench structure embedded in the substrate, wherein the stress-releasing trench structure is in the periphery region, and the stress-releasing trench structure fully surrounds a perimeter of the pixel array region and the bonding pad region of a corresponding sensor chip of the plurality of sensor chips.

Abstract: The present disclosure describes heat dissipation structures formed in functional or non-functional areas of a three-dimensional chip structure. These heat dissipation structures are configured to route the heat generated within the three-dimensional chip structure to designated areas on or outside the three-dimensional chip structure. For example, the three-dimensional chip structure can include a plurality of chips vertically stacked on a substrate, a first passivation layer interposed between a first chip and a second chip of the plurality of chips, and a heat dissipation layer embedded in the first passivation layer and configured to allow conductive structures to pass through.

Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.

Abstract: Disclosed is a method of fabricating a semiconductor image sensor device. The method includes providing a substrate having a pixel region, a periphery region, and a bonding pad region. The substrate further has a first side and a second side opposite the first side. The pixel region contains radiation-sensing regions. The method further includes forming a bonding pad in the bonding pad region; and forming light-blocking structures over the second side of the substrate, at least in the pixel region, after the bonding pad has been formed.

Abstract: Some aspects of the present disclosure relate to a method. In the method, a semiconductor substrate is received. A photodetector is formed in the semiconductor substrate. An interconnect structure is formed over the photodetector and over a frontside of the semiconductor substrate. A backside of the semiconductor substrate is thinned, the backside being furthest from the interconnect structure. A ring-shaped structure is formed so as to extend into the thinned backside of the semiconductor substrate to laterally surround the photodetector. A series of trench structures are formed to extend into the thinned backside of the semiconductor substrate. The series of trench structures are laterally surrounded by the ring-shaped structure and extend into the photodetector.

Abstract: The present invention provides a physiological information detection method for calculating a physiological value by using changes of a dynamic image. The detection method includes: acquiring detection data from a gray-scale value of the dynamic image, and transforming the detection data into frequency data. The detection method further includes: determining whether the frequency data meet a preset condition, and using a transformation model of a corresponding transformation combination accordingly to transform the frequency data into a physiological value. The present invention further provides a physiological information detection device applying the detection method.

Abstract: A back side illumination (BSI) image sensor is provided. The BSI image sensor includes a semiconductor substrate, a first dielectric layer, a reflective element, a second dielectric layer and a color filter layer. The semiconductor substrate has a front side and a back side. The first dielectric layer is disposed on the front side of the semiconductor substrate. The reflective element is disposed on the first dielectric layer, in which the reflective element has an inner sidewall contacting the first dielectric layer, and the inner sidewall has a zigzag profile. The second dielectric layer is disposed on the first dielectric layer and the reflective element. The color filter layer is disposed on the backside of the semiconductor substrate.