Abstract: Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

Abstract: A pixel array includes octagon-shaped pixel sensors and a combination of visible light pixel sensors (e.g., red, green, and blue pixel sensors) and near infrared (NIR) pixel sensors. The color information obtained by the visible light pixel sensors and the luminance obtained by the NIR pixel sensors may be combined to increase the low-light performance of the pixel array, and to allow for low-light color images in low-light applications. The octagon-shaped pixel sensors may be interspersed in the pixel array with square-shaped pixel sensors to increase the utilization of space in the pixel array, and to allow for pixel sensors in the pixel array to be sized differently. The capability to accommodate different sizes of visible light pixel sensors and NIR pixel sensors permits the pixel array to be formed and/or configured to satisfy various performance parameters.

Abstract: The present invention discloses an automatic source-seeking indoor pollution purifying and removing device and method for airborne pollutants. The device comprises pollutant concentration sensors, a control unit, a position sensor, a power plant, a moving mechanism, a telescopic device, a pollutant collection hood, and a filtering and purifying device. The control unit can identify the actual release positions and hourly release rates of relevant pollutants according to the concentration data monitored by the pollutant concentration sensors, and can control the pollutant collection hood in the device to move to a designated position in a space, so as to realize the collection and removal of pollutants at the release position of the pollutants.

Abstract: Leadless power amplifier (PA) packages and methods for fabricating leadless PA packages having topside terminations are disclosed. In embodiments, the method includes providing electrically-conductive pillar supports and a base flange. At least a first radio frequency (RF) power die is attached to a die mount surface of the base flange and electrically interconnected with the pillar supports. Pillar contacts are further provided, with the pillar contacts electrically coupled to the pillar supports and projecting therefrom in a package height direction. The first RF power die is enclosed in a package body, which at least partially defines a package topside surface opposite a lower surface of the base flange. Topside input/out terminals are formed, which are accessible from the package topside surface and which are electrically interconnected with the first RF power die through the pillar contacts and the pillar supports.

Abstract: An isolation structure can be formed between adjacent and/or non-adjacent pixel regions (e.g., between diagonal or cross-road pixel regions), of an image sensor, to reduce and/or prevent optical crosstalk. The isolation structure may include a deep trench isolation (DTI) structure or another type of trench that is partially filled with a material such that an air gap is formed therein. The DTI structure having the air gap formed therein may reduce optical crosstalk between pixel regions. The reduced optical crosstalk may increase spatial resolution of the image sensor, may increase overall sensitivity of the image sensor, may decrease color mixing between pixel regions of the image sensor, and/or may decrease image noise after color correction of images captured using the image sensor.

Abstract: The present disclosure is directed to a method of forming a polarization grating structure (e.g., polarizer) as part of a grid structure of a back side illuminated image sensor device. For example, the method includes forming a layer stack over a semiconductor layer with radiation-sensing regions. Further, the method includes forming grating elements of one or more polarization grating structures within a grid structure, where forming the grating elements includes (i) etching the layer stack to form the grid structure and (ii) etching the layer stack to form grating elements oriented to a polarization angle.

Abstract: The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.

Abstract: A light sensing device is provided. The light sensing device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The light sensing device also includes a filter element over the light sensing region and a light shielding element over the semiconductor substrate and beside the filter element. The light sensing device further includes a dielectric element over the light shielding element and beside the filter element. A top of the light shielding element and a bottom of the dielectric element have different widths.

Abstract: A semiconductor device includes a pixel array comprising a first pixel and a second pixel. The semiconductor device includes a metal structure overlying a portion of a substrate between the first pixel and the second pixel. The semiconductor device includes a first barrier layer adjacent a sidewall of the metal structure. The semiconductor device includes a passivation layer adjacent a sidewall of the first barrier layer. The first barrier layer is between the passivation layer and the metal structure.

Abstract: Apparatus and methods for sensing long wavelength light are described herein. A semiconductor device includes: a carrier; a device layer on the carrier; a semiconductor layer on the device layer, and an insulation layer on the semiconductor layer. The semiconductor layer includes isolation regions and pixel regions. The isolation regions are or include a first semiconductor material. The pixel regions are or include a second semiconductor material that is different from the first semiconductor material.

Abstract: An image sensor device has a first number of first pixels disposed in a substrate and a second number of second pixels disposed in the substrate. The first number is substantially equal to the second number. A light-blocking structure disposed over the first pixels and the second pixels. The light-blocking structure defines a plurality of first openings and second openings through which light can pass. The first openings are disposed over the first pixels. The second openings are disposed over the second pixels. The second openings are smaller than the first openings. A microcontroller is configured to turn on different ones of the second pixels at different points in time.

Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.

Abstract: A photodetector circuit includes a photodetector and a sensing circuit located over a substrate semiconductor layer having a doping of a first conductivity type. The photodetector includes a second-conductivity-type pinned photodiode layer that forms a p-n junction with the substrate semiconductor layer, at least one floating diffusion region that is laterally spaced from a periphery of the second-conductivity-type pinned photodiode layer, and at least one transfer gate electrode. At least two different operations may be performed by applying at least two different pulse patterns to the at least one transfer gate electrode. The at least two different pulse patterns differ from one another or from each other by at least one of pulse duration, pulse magnitude, and delay time between a control signal applied to the sensing circuit and pulse initiation at a respective one of the at least one transfer gate electrode.

Abstract: A method includes forming image sensors in a semiconductor substrate, thinning the semiconductor substrate from a backside of the semiconductor substrate, forming a dielectric layer on the backside of the semiconductor substrate, and forming a polymer grid on the backside of the semiconductor substrate. The polymer grid has a first refractivity value. The method further includes forming color filters in the polymer grid, wherein the color filters has a second refractivity value higher than the first refractivity value, and forming micro-lenses on the color filters.

Abstract: Fibrin-targeted microbubbles and their use in ultrasound-based diagnostic and therapeutic applications are disclosed. In particular, the invention relates to the use of fibrin-targeted polymerized shell lipid microbubbles and methods of fabricating and using such fibrin-targeted microbubbles for ultrasound imaging of fibrin deposition in tissue, including adhesions and atherosclerotic plaques. The invention further relates to the use of such fibrin-targeted microbubbles as carriers for drug delivery and in ultrasound-based methods of treatment.

Abstract: An image sensor including a semiconductor substrate, a plurality of color filters, a plurality of first lenses and a second lens is provided. The semiconductor substrate includes a plurality of sensing pixels arranged in array, and each of the plurality of sensing pixels respectively includes a plurality of image sensing units and a plurality of phase detection units. The color filters at least cover the plurality of image sensing units. The first lenses are disposed on the plurality of color filters. Each of the plurality of first lenses respectively covers one of the plurality of image sensing units. The second lens is disposed on the plurality of color filters and the second lens covers the plurality of phase detection units.

Abstract: A method for forming a light sensing device is provided. The method includes forming a light sensing region in a semiconductor substrate and forming a light shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the light shielding layer and partially removing the light shielding layer and the dielectric layer to form a light shielding element and a dielectric element. A top width of the light shielding element is greater than a bottom width of the dielectric element. The light shielding element and the dielectric element surround a recess, and the recess is aligned with the light sensing region. The method further includes forming a filter element in the recess.

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate and a filter partially surrounded by the dielectric layer. The filter has a protruding portion protruding from a bottom surface of the dielectric layer. The image sensor device further includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the protruding portion of the filter. In addition, the image sensor device includes a reflective element between the shielding layer and an edge of the light sensing region.

Abstract: A farm sensing system is provided. The farm sensing system includes a cloud server, a sensing apparatus, and a computer device. The sensing apparatus is configured to be connected to a specific sensor disposed on a farm. The computer device is configured to obtain specific sensor data generated by the specific sensor through the cloud server. In response to there being potential failure of the specific sensor, the sensing apparatus enters a sensor-calibration mode. In response to a reference sensor being connected to the sensing apparatus, the sensing apparatus builds a calibration table by periodically receiving specific sensor data and reference sensor data, and executes a finite-state machine to perform a calibration procedure on each entry in the calibration table.

Abstract: A farm sensing system is provided. The farm sensing system includes a cloud server, a sensing apparatus, and a computer device. The sensing apparatus is configured to be connected to a specific sensor disposed on a farm. The computer device is configured to obtain specific sensor data generated by the specific sensor through the cloud server. In response to there being potential failure of the specific sensor, the sensing apparatus enters a sensor-calibration mode. In response to a reference sensor being connected to the sensing apparatus, the sensing apparatus builds a calibration table by periodically receiving specific sensor data and reference sensor data, and executes a finite-state machine to perform a calibration procedure on each entry in the calibration table.