Abstract: The present invention relates to an apparatus and method for mass producing hydrogen by reforming plastic waste by means of an electromagnetic plasma torch and, more specifically, to an apparatus and method for mass producing hydrogen by injecting steam or carbon dioxide to an electromagnetic plasma torch system to reform, with high efficiency, a plastic waste compound in a high-temperature reforming chamber by means of active particles which may be generated in a torch flame such as oxygen atoms, hydrogen oxide molecules, hydrogen atoms, carbon monoxide molecules and the like. Synthesis gases generated by reforming in the reforming chamber are mainly carbon monoxide and hydrogen. Carbon monoxide is converted to hydrogen by a water gas reaction, and hydrogen is refined by pressure swing adsorption (PSA). Therefore, vinyl waste and plastic waste which are most fatal to the Earth's environment are eliminated while hydrogen, which is one of the most environment-friendly energy sources, is produced.

Abstract: Bonding a full-bridge device and an LLC device in a stack, or forming the full-bridge device and the LLC device on a same substrate, rather than connecting the devices, reduces a chip area associated with a power converter including the full-bridge device and the LLC device. Additionally, the full-bridge device and the LLC device consume less power because parasitic inductance and capacitance are reduced. Additionally, raw materials and production time are conserved that would otherwise have been used to connect the full-bridge device and the LLC device (e.g., via wires).

Abstract: A integrated circuit includes a first, a second, a third, and a fourth gate, a first input pin and a first conductor. The first and third gate are on a first level. The second and fourth gate are on a second level. The second gate is coupled to the first gate. The fourth gate is coupled to the third gate. The first input pin extends in a second direction, is on a first metal layer above a front-side of a substrate, is coupled to the first gate, and configured to receive a first input signal. The first input pin is electrically coupled to the third gate by the first, second or fourth gate. The first conductor extends in the first direction, is on a second metal layer below a back-side of the substrate, and is coupled to the second and fourth gate.

Abstract: A bearing device in a radial flow adsorber with a gas flow guide function includes a bearing platform, a supporting cylinder, a flow guide pipe, an annular bottom plate, a limiting block and a supporting frame, wherein an upper portion of the bearing platform is filled with adsorbent, an interior of a lower portion of the bearing platform is connected with the annular bottom plate through the supporting cylinder, a backing plate is arranged between the bearing platform and the supporting cylinder, on the supporting cylinder or the annular bottom plate is opened a hole and arranged a plurality of flow guide pipes for guiding gas flow, the annular bottom plate is placed on the supporting frame, the limiting block is arranged on the supporting frame, and the supporting frame is fixed on a cylinder body or a lower head of the adsorber by welding.

Abstract: In an embodiment, a device includes: a first transistor including a first gate structure; a second transistor including a second gate structure, the second gate structure disposed above and coupled to the first gate structure; a third gate structure; a fourth gate structure, the fourth gate structure disposed above and coupled to the third gate structure; a gate isolation region between the first gate structure and the third gate structure, the gate isolation region disposed between the second gate structure and the fourth gate structure; and a cross-coupling contact extending beneath the gate isolation region, the first gate structure, and the third gate structure, the cross-coupling contact coupled to the first gate structure.

Abstract: A vehicle includes a seat assembly. The seat assembly includes a seat cushion, a cushion insert frame rotatably coupled to the seat cushion, and a locking device for engaging the cushion insert frame to the seat cushion and for disengaging the cushion insert frame from the seat cushion to allow for adjusting an angle of the cushion insert frame with respect to the seat cushion.

Abstract: A wearable device an intelligent health promotion service system (IHPSS) is disclosed. One embodiment of the wearable device (10) is configured to interface plurality groups of skin-mounted sensor pads (130) over a body part (140) of a wearer, and comprises: a modular brace (110) structurally separated from the sensor pads, and a plurality of sensor modules (120). The modular bracing is provided with a plurality groups of orienting slots (111) arranged thereon configured to maintain intra-group orientation between the sensor pads, and is configured to allow inter-group distance adjustment between the groups of the sensor pads over the body part of the wearer. The plurality of sensor modules is configured to be detachably coupled to the groups of sensor pads through the orienting slots in the modular bracing member. The sensor modules are provided with physiological sensing circuits wirelessly communicative with the intelligent health system.

Abstract: A method includes forming a lower transistor in a lower wafer, wherein the lower transistor includes a lower source/drain region, forming a contact plug electrically connecting to the lower source/drain region, and forming a metal line over the lower transistor. A first portion of the metal line is vertically aligned to the lower source/drain region. The method further includes bonding an upper wafer to the lower wafer, and forming an upper transistor in the upper wafer. The upper transistor includes an upper source/drain region, and is vertically aligned to a second portion of the metal line. A first interconnect structure is formed on the lower wafer and electrically connecting to the lower transistor. A second interconnect structure is formed on the upper wafer and electrically connecting to the upper transistor.

Abstract: A method includes forming a first transistor in a first wafer, wherein the first transistor includes a first source/drain region, forming a first bond pad electrically coupling to the first source/drain region, forming an second transistor in a second wafer, wherein the second transistor includes a second source/drain region, forming a second bond pad electrically coupling to the second source/drain region, and bonding the second wafer to the first wafer, with the second bond pad being bonded to the first bond pad.

Abstract: A replaceable membrane distillation module has a membrane distillation plate with an upper portion and a lower portion at two ends respectively. Two upper holes and two lower holes are defined through the upper portion and the lower portion at two ends respectively. A distillation portion is recessed in at least one side of the membrane distillation plate, and a distillation membrane covers on the distillation portion that a distillation space forms between the distillation portions and the distillation membrane. Multiple channels are disposed in the membrane distillation plate to communicate one of the upper holes, the distillation space and one of the lower flow holes. A blocking element is selectively combined with one of the upper holes or one of the lower flow holes.

Abstract: The present invention provides a photovoltaic panel packaging structure and method for the same. The packaging structure comprises a frame and a solar photovoltaic panel. The solar photovoltaic panel includes a first frame surface and a second frame surface with a receiving space and grooves formed therein. The a solar photovoltaic panel is installed in the receiving space and stacked on top of a first stop portion. The solar photovoltaic panel includes a first encapsulating layer, a second encapsulating layer. The first encapsulating layer includes a plurality of engaging strips extending along the edges of the solar photovoltaic panel, the engaging strips are respectively embedded in the corresponding grooves to hold the solar photovoltaic panel in place in the frame. Meanwhile, a third encapsulating layer extends to connect to the second frame surface. As a result, weight and thickness can be reduced while reducing multiple packaging passes and simplifying the assembly process.

Abstract: Disclosed in the present invention are a peptide compound, an application thereof, and a composition containing the same. Provided in the present invention are a peptide compound represented by formula I, a pharmaceutically acceptable salt thereof, a tautomer thereof, a solvate thereof, a crystal form thereof, or a prodrug thereof. The compound has good stability and good activity.

Abstract: A method for preparing high-toughness heat-resistant aluminum alloy armature material, comprises: heating and melting an aluminum ingot into an aluminum liquid; adding the following elements to the aluminum solution in mass percent: Ce 6-12%, Y 5-9.5%, Zr 0.5-3%, Mg 0.1-2.5%, X 0.15-2.5%, Fe 0.15-0.25%, Mn 0.05-0.15%, and Si 0.1-0.5%; forming an alloy solution and casting same into an alloy ingot; processing the alloy ingot into spherical alloy powder; subjecting the spherical alloy powder to selective laser melting and solidification forming to produce nano-scale Al11Ce3, Al3(Y, Zr), and/or Al3X intermetallic compounds distributed in a net-like skeleton structure in an aluminum matrix. The material of the present disclosure has low density, high-temperature resistance, high energy absorption rate and excellent electrical conductivity, and excellent mechanical properties at room temperature and high temperature.

Abstract: In some embodiments, the present disclosure relates to a semiconductor device. The semiconductor device includes a channel layer over a base substrate and an active layer over the channel layer. A source and a drain are over the active layer. A gate is over the active layer and laterally between the source and the drain. A dielectric is over the active layer and laterally surrounds the source, the drain, and the gate. A cap structure laterally contacts the source and is disposed laterally between the gate and the source. The source vertically extends to a top of the cap structure.

Abstract: The present disclosure relates an integrated chip. The integrated chip includes an isolation region disposed within a substrate and surrounding an active area. A gate structure is disposed over the substrate and has a base region and a gate extension finger protruding outward from a sidewall of the base region along a first direction to past opposing sides of the active area. A source contact and a drain contact are disposed within the active area. The drain contact is separated from the source contact by the gate extension finger. A first plurality of conductive contacts are arranged on the gate structure. The first plurality of conductive contacts are separated along the first direction by distances overlying the gate extension finger.

Abstract: An integrated circuit (IC) die includes a body having a dielectric layer and a plurality of contact pads formed on the dielectric layer. The IC die also includes a passivation layer disposed on the dielectric layer. The passivation layer has a plurality of openings exposing the plurality of contact pads. A plurality of inner under-bump-metallurgy (“UBM”) structures are disposed on a first portion of the plurality of openings, and a plurality of outer UBM structures are disposed on a second portion of the plurality of openings. The plurality of inner UBM structures have uniform spacing in a direction parallel to an edge of the body. The plurality of outer UBM structures are positioned around the plurality of inner UBM structures, and each of the plurality of outer UBM structures having a longitudinal axis directed toward a central area of the IC die.

Abstract: In some embodiments, the present disclosure relates to a method of forming a high electron mobility transistor (HEMT) device. The method includes forming a passivation layer over a substrate. A source contact and a drain contact are formed within the passivation layer. A part of the passivation layer is removed to form a cavity. The cavity has a lower portion formed by a first sidewall and a second sidewall of the passivation layer and an upper portion formed by the first sidewall of the passivation layer and a sidewall of the source contact. A gate structure is formed within the passivation layer between the drain contact and the cavity. A cap structure is formed within the cavity.

Abstract: The present invention relates to a fluorescent polymer cast on the surface of wells of a plate and a plate comprising the fluorescent polymer. The plate is used in a method for calibrating read-out values of plate readers. The method for calibrating the plate readers can effectively reduce the deviation of read-out values among different plate readers.

Abstract: A memory structure includes a pull-down transistor and a pull-up transistor stacked vertically in a Z-direction, a pass-gate transistor and a dummy transistor stacked vertically in the Z-direction, a dielectric structure, a connection structure, and a butt contact. The pull-down transistor and the pull-up transistor share a first gate structure. The pass-gate transistor and the dummy transistor share a second gate structure. The dielectric structure is between the first gate structure and the second gate structure in a Y-direction. The connection structure is over and electrically connected to the first gate structure and is over and electrically isolated from the second gate structure. The connection structure is an L-shape in a Y-Z cross-sectional view. The butt contact is directly over the connection structure and the second gate structure. The butt contact is electrically connected to the connection structure and a source/drain feature of the pass-gate transistor.