Patents by Inventor Yun Wu

Yun Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240234404
    Abstract: An integrated circuit is provided, including a first cell. The first cell includes a first pair of active regions, at least one first gate, two first conductive segments, and a first interconnect structure. The first pair of active regions extends in a first direction and stacked on each other. The at least one first gate extends in a second direction different from the first direction, and is arranged across the first pair of active regions, to form at least one first pair of devices that are stacked on each other. The first conductive segments are coupled to the first pair of active regions respectively. The first interconnect structure is coupled to at least one of a first via or one of the two first conductive segments.
    Type: Application
    Filed: January 11, 2023
    Publication date: July 11, 2024
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Wei-Cheng TZENG, Shih-Wei PENG, Ching-Yu HUANG, Chun-Yen LIN, Wei-Cheng LIN, Jiann-Tyng TZENG, Szuya LIAO, Jui-Chien HUANG, Cheng-Yin WANG, Ting-Yun WU
  • Publication number: 20240229948
    Abstract: The application relates to an anti-back-transfer intake structure of a rotating detonation combustion chamber including a Tesla valve communicating with the rotating detonation combustion chamber and arranged at an inlet of the rotating detonation combustion chamber. The Tesla valve includes a casing and a flow passage, the casing is coaxially connected with an outer wall of the rotating detonation combustion chamber, the flow passage is arranged in the casing, and the flow passage has an inlet end for introducing air, and an outlet end connected with an annular passage of the rotating detonation combustion chamber.
    Type: Application
    Filed: December 29, 2023
    Publication date: July 11, 2024
    Inventors: Feilong SONG, Yun WU, Xin CHEN, Min JIA, Huimin SONG, Shanguang GUO, Zhao YANG, Jiaojiao WANG
  • Publication number: 20240209023
    Abstract: Disclosed in the present invention are a peptide compound, an application thereof, and a composition containing the same. Provided in the present invention are a peptide compound, a pharmaceutically acceptable salt thereof, a tautomer thereof, a solvate thereof, a crystal form thereof, or a prodrug thereof. The compound has good stability and good activity.
    Type: Application
    Filed: March 1, 2024
    Publication date: June 27, 2024
    Applicant: XDCEXPLORER (SHANGHAI) CO., LTD.
    Inventors: Yan WANG, Yvonne ANGELL, Yun WU, Manhua LI, Yonghan HU
  • Publication number: 20240191324
    Abstract: A method for preparing high-toughness heat-resistant aluminum alloy armature material, comprises: heating and melting an aluminum ingot into an aluminum liquid; adding the following elements to the aluminum solution in mass percent: Ce 6-12%, Y 5-9.5%, Zr 0.5-3%, Mg 0.1-2.5%, X 0.15-2.5%, Fe 0.15-0.25%, Mn 0.05-0.15%, and Si 0.1-0.5%; forming an alloy solution and casting same into an alloy ingot; processing the alloy ingot into spherical alloy powder; subjecting the spherical alloy powder to selective laser melting and solidification forming to produce nano-scale Al11Ce3, Al3(Y, Zr), and/or Al3X intermetallic compounds distributed in a net-like skeleton structure in an aluminum matrix. The material of the present disclosure has low density, high-temperature resistance, high energy absorption rate and excellent electrical conductivity, and excellent mechanical properties at room temperature and high temperature.
    Type: Application
    Filed: September 15, 2023
    Publication date: June 13, 2024
    Applicant: SHANGHAI JIAO TONG UNIVERSITY
    Inventors: Haiyan GAO, Haiyang LV, Peng PENG, Yufei WANG, Mengmeng WANG, Yun WU, Chi ZHANG, Jun WANG, Baode SUN
  • Patent number: 12004903
    Abstract: A spiral ultrasonic tomography imaging method and system are provided. The method is to use synchronous rotation of an ultrasonic probe or cyclic switching of emission array elements in the ultrasonic probe under the premise of a uniform displacement of the ultrasonic probe along the Z axis, so that the change trajectory of the positions of emission array elements over time in a three-dimensional space at each ultrasonic emission time is distributed along a spiral line or a curve. During the process of the uniform displacement of the ultrasonic probe along the Z axis, the ultrasonic probe emits ultrasonic waves and receives and collects echo data. The collected echo data is stored and post-processed to realize ultrasonic tomography imaging of an object. The spiral ultrasonic tomography three-dimensional scanning method and the corresponding system realize rapid continuous uninterrupted data acquisition to ensure that higher spatial resolution in the Z-axis direction.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: June 11, 2024
    Assignee: HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Ming Yuchi, Mingyue Ding, Qiude Zhang, Junjie Song, Kuolin Liu, Zhaohui Liu, Liang Zhou, Zhaohui Quan, Xiaoyue Fang, Yun Wu, Quan Zhou
  • Publication number: 20240148301
    Abstract: The present invention provides a smart wearable device, which is held on an upper body of a wearer by a plurality of contact pad sets, and has a connection unit, a first sensing module, a second sensing module, and an extension unit.
    Type: Application
    Filed: November 7, 2022
    Publication date: May 9, 2024
    Inventors: Chien-Hsiang Chang, Yang-Cheng Lin, Wei-Chih Lien, Tseng-Ping Chiu, Pei-Yun Wu, Bo Liu
  • Publication number: 20240153558
    Abstract: A memory device includes a main array comprising main memory cells; a redundancy array comprising redundancy memory cells; and write circuitry configured to perform a first programming operation on a main memory cell, to detect whether a current of the main memory cell exceeds a predefined current threshold during the first programming operation, and to disable a second programming operation for a redundancy memory cell if the current of the main memory cell exceeds the predefined current threshold during the first programming operation.
    Type: Application
    Filed: January 12, 2024
    Publication date: May 9, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu-Der Chih, Chung-Cheng Chou, Chun-Yun Wu, Chen-Ming Hung
  • Publication number: 20240136291
    Abstract: Semiconductor devices and methods of forming the same are provided. In some embodiments, a method includes receiving a workpiece having a redistribution layer disposed over and electrically coupled to an interconnect structure. In some embodiments, the method further includes patterning the redistribution layer to form a recess between and separating a first conductive feature and a second conductive feature of the redistribution layer, where corners of the first conductive feature and the second conductive feature are defined adjacent to and on either side of the recess. The method further includes depositing a first dielectric layer over the first conductive feature, the second conductive feature, and within the recess. The method further includes depositing a nitride layer over the first dielectric layer. In some examples, the method further includes removing portions of the nitride layer disposed over the corners of the first conductive feature and the second conductive feature.
    Type: Application
    Filed: January 12, 2023
    Publication date: April 25, 2024
    Inventors: Hsiang-Ku SHEN, Chen-Chiu HUANG, Chia-Nan LIN, Man-Yun WU, Wen-Tzu CHEN, Sean YANG, Dian-Hao CHEN, Chi-Hao CHANG, Ching-Wei LIN, Wen-Ling CHANG
  • Publication number: 20240133473
    Abstract: The application relates to an anti-back-transfer intake structure of a rotating detonation combustion chamber including a Tesla valve communicating with the rotating detonation combustion chamber and arranged at an inlet of the rotating detonation combustion chamber. The Tesla valve includes a casing and a flow passage, the casing is coaxially connected with an outer wall of the rotating detonation combustion chamber, the flow passage is arranged in the casing, and the flow passage has an inlet end for introducing air, and an outlet end connected with an annular passage of the rotating detonation combustion chamber.
    Type: Application
    Filed: December 29, 2023
    Publication date: April 25, 2024
    Inventors: Feilong SONG, Yun WU, Xin CHEN, Min JIA, Huimin SONG, Shanguang GUO, Zhao YANG, Jiaojiao WANG
  • Patent number: 11938222
    Abstract: The present application relates to a pregabalin sustained release composition, comprising: (a) an active ingredient; (b) a matrix-forming agent; (c) a swelling agent; (d) a gelling agent; and optionally a filler. The pregabalin sustained release composition provided in the present application can rapidly swell in volume when exposed to aqueous medium until exceeding the dimeter of human gastric pyloric (13 mm). It thereby prolongs the gastric emptying time to increase the retention time of pregabalin in the stomach and enhances absorption of pregabalin in the small intestine and ascending colon. Moreover, the pregabalin sustained release composition provided herein achieves a sustained release for 24 h, which allows QD (once a day) administration, reduces administration number, and improves patient compliance.
    Type: Grant
    Filed: June 12, 2019
    Date of Patent: March 26, 2024
    Assignee: BEIJING TIDE PHARMACEUTICAL CO., LTD.
    Inventors: Zhaolu Zhu, Yun Wu, Di Lu, Yanping Zhao, Liying Zhou, Yanan Liu
  • Publication number: 20240088208
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming an interconnect structure over a substrate. The method includes forming a first conductive pad and a mask layer over the interconnect structure. The mask layer covers a top surface of the first conductive pad. The method includes forming a metal oxide layer over a sidewall of the first conductive pad. The method includes forming a second conductive pad over the first conductive pad and passing through the mask layer. The first conductive pad and the second conductive pad are made of different materials.
    Type: Application
    Filed: January 11, 2023
    Publication date: March 14, 2024
    Inventors: Tzu-Ting LIU, Hsiang-Ku SHEN, Wen-Tzu CHEN, Man-Yun WU, Wen-Ling CHANG, Dian-Hau CHEN
  • Publication number: 20240071818
    Abstract: A semiconductor device and method of fabricating the same include a substrate, a first epitaxial layer, a first protection layer, and a contact etching stop layer. The substrate includes a PMOS transistor region, and the first epitaxial layer is disposed on the substrate, within the PMOS transistor region. The first protection layer is disposed on the first epitaxial layer, covering surfaces of the first epitaxial layer. The contact etching stop layer is disposed on the first protection layer and the substrate, wherein a portion of the first protection layer is exposed from the contact etching stop layer.
    Type: Application
    Filed: September 22, 2022
    Publication date: February 29, 2024
    Applicant: UNITED MICROELECTRONICS CORP.
    Inventors: I-Wei Chi, Te-Chang Hsu, Yao-Jhan Wang, Meng-Yun Wu, Chun-Jen Huang
  • Publication number: 20240072115
    Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.
    Type: Application
    Filed: February 13, 2023
    Publication date: February 29, 2024
    Inventors: Wei-Xiang You, Wei-De Ho, Hsin Yang Hung, Meng-Yu Lin, Hsiang-Hung Huang, Chun-Fu Cheng, Kuan-Kan Hu, Szu-Hua Chen, Ting-Yun Wu, Wei-Cheng Tzeng, Wei-Cheng Lin, Cheng-Yin Wang, Jui-Chien Huang, Szuya Liao
  • Patent number: 11915752
    Abstract: A memory device includes a main array comprising main memory cells; a redundancy array comprising redundancy memory cells; and write circuitry configured to perform a first programming operation on a main memory cell, to detect whether a current of the main memory cell exceeds a predefined current threshold during the first programming operation, and to disable a second programming operation for a redundancy memory cell if the current of the main memory cell exceeds the predefined current threshold during the first programming operation.
    Type: Grant
    Filed: March 31, 2022
    Date of Patent: February 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Der Chih, Chung-Cheng Chou, Chun-Yun Wu, Chen-Ming Hung
  • Patent number: 11891601
    Abstract: The present invention provides a method of modulating the expression of a gene containing expanded nucleotide repeats in a cell, comprising: inhibiting the biological activity of SPT4 or SUPT4H; and regulating the formation of R-loops. The inhibition step can effectively reduce the expression of the gene containing the expanded nucleotide repeats and the regulatory step can further enhance the inhibition step. The inhibition step and the regulation step are for the purpose of regulating gene expression by interfering the capacity of RNA polymerase II transcribing over a DNA template with lengthy nucleotide repeats.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: February 6, 2024
    Assignee: NATIONAL YANG MING CHIAO TUNG UNIVERSITY
    Inventors: Tzu-Hao Cheng, Chia-Rung Liu, Tse-I Lin, Yun-Yun Wu, Stanley N. Cohen
  • Patent number: 11865490
    Abstract: A multi-compartment bed radial flow adsorber capable of realizing large telescopic deformation mainly comprises an adsorber body, the adsorber body consists of an upper seal head, a barrel, a lower seal head and a pressed shell connected with an upper connecting pipe and a lower connecting pipe, the upper seal head and the lower seal head of the shell are each provided with an upper gas inlet and outlet pipe and a lower gas inlet and outlet pipe, a supporting seat is arranged at the bottom in the shell, an adsorption barrel is arranged above the supporting seat and consists of a plurality of concentric barrels with different diameters, a plurality of annular spaces are formed by the concentric barrels with different diameters, different types of adsorbents can be filled in the annular spaces, and the adsorption barrel is composed of a pore plate or a grid.
    Type: Grant
    Filed: September 17, 2021
    Date of Patent: January 9, 2024
    Assignee: HANGZHOU OXYGEN PLANT GROUP CO., LTD.
    Inventors: Yisong Han, Xiuna Lin, Yi Gao, Yun Wu, Hongli Xia, Xudong Peng, Yunsong Han
  • Publication number: 20230416221
    Abstract: A kinase inhibitor, comprising a compound of formula (I) or a pharmaceutically acceptable salt, solvate, ester, acid, metabolite or prodrug thereof. A method and a use for using the inhibitor for treatment of diseases related to CDK9 and/or mutagenic activity thereof.
    Type: Application
    Filed: October 21, 2021
    Publication date: December 28, 2023
    Applicant: HEFEI INSTITUTES OF PHYSICAL SCIENCE, CHINESE ACADEMY OF SCIENCES
    Inventors: Qingsong LIU, Jing LIU, Yun WU, Beilei WANG, Aoli WANG, Chen HU, Qingwang LIU, Fengming ZOU, Wenchao WANG, Zuowei WANG, Jiangyan CAO, Chenliang SHI, Li WANG
  • Publication number: 20230402937
    Abstract: Bonding a full-bridge device and an LLC device in a stack, or forming the full-bridge device and the LLC device on a same substrate, rather than connecting the devices, reduces a chip area associated with a power converter including the full-bridge device and the LLC device. Additionally, the full-bridge device and the LLC device consume less power because parasitic inductance and capacitance are reduced. Additionally, raw materials and production time are conserved that would otherwise have been used to connect the full-bridge device and the LLC device (e.g., via wires).
    Type: Application
    Filed: June 13, 2022
    Publication date: December 14, 2023
    Inventors: Yen-Ku LIN, Ru-Yi SU, Haw-Yun WU, Chun-Lin TSAI
  • Patent number: D1016008
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: February 27, 2024
    Assignee: ABB E-MOBILITY B.V
    Inventors: Ganxing Zheng, Yun Wu, Wen Zhou
  • Patent number: D1031635
    Type: Grant
    Filed: September 2, 2021
    Date of Patent: June 18, 2024
    Assignee: ABB E-MOBILITY B.V.
    Inventors: Ganxing Zheng, Yun Wu, Wen Zhou