Patents by Inventor Yung-Cheng Chang

Yung-Cheng Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240136946
    Abstract: This patent presents a multidimensional space vector modulation (MDSVM) circuit formed by coupling a half-bridge logic control circuit not directly coupled to electronic components with at least three half-bridge logic control circuits coupled to electronic components. The half-bridge logic control circuit not directly coupled with any electronic components can form a full-bridge circuit with any other half-bridge logic control circuit coupled with electronic components. Therefore, users can further control the voltage difference between both ends of each electronic component separately and then individually control the strength and direction of current flowing through each electronic component and solving the problem of control attributed to the complexity of prior art.
    Type: Application
    Filed: April 10, 2023
    Publication date: April 25, 2024
    Applicant: TENSOR TECH CO., LTD
    Inventors: Shang Jung LEE, Po-Hsun YEN, Yung-Cheng CHANG, Sung-Liang HOU
  • Publication number: 20240136428
    Abstract: Improved inner spacers for semiconductor devices and methods of forming the same are disclosed.
    Type: Application
    Filed: January 2, 2024
    Publication date: April 25, 2024
    Inventors: Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu
  • Patent number: 11955397
    Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.
    Type: Grant
    Filed: November 9, 2020
    Date of Patent: April 9, 2024
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Shin-Cheng Lin, Cheng-Wei Chou, Ting-En Hsieh, Yi-Han Huang, Kwang-Ming Lin, Yung-Fong Lin, Cheng-Tao Chou, Chi-Fu Lee, Chia-Lin Chen, Shu-Wen Chang
  • Patent number: 11940737
    Abstract: A method includes receiving a device design layout and a scribe line design layout surrounding the device design layout. The device design layout and the scribe line design layout are rotated in different directions. An optical proximity correction (OPC) process is performed on the rotated device design layout and the rotated scribe line design layout. A reticle includes the device design layout and the scribe line design layout is formed after performing the OPC process.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsueh-Yi Chung, Yung-Cheng Chen, Fei-Gwo Tsai, Chi-Hung Liao, Shih-Chi Fu, Wei-Ti Hsu, Jui-Ping Chuang, Tzong-Sheng Chang, Kuei-Shun Chen, Meng-Wei Chen
  • Patent number: 11942329
    Abstract: A method for forming a semiconductor device is provided. The method includes forming a semiconductor protruding structure over a substrate and surrounding the semiconductor protruding structure with an insulating layer. The method also includes forming a dielectric layer over the insulating layer. The method further includes partially removing the dielectric layer and insulating layer using a planarization process. As a result, topmost surfaces of the semiconductor protruding structure, the insulating layer, and the dielectric layer are substantially level with each other. In addition, the method includes forming a protective layer to cover the topmost surfaces of the dielectric layer. The method includes recessing the insulating layer after the protective layer is formed such that the semiconductor protruding structure and a portion of the dielectric layer protrude from a top surface of a remaining portion of the insulating layer.
    Type: Grant
    Filed: March 3, 2022
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wan-Yi Kao, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui
  • Patent number: 11923432
    Abstract: A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.
    Type: Grant
    Filed: January 3, 2023
    Date of Patent: March 5, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Yoh-Rong Liu, Wen-Kai Lin, Che-Hao Chang, Chi On Chui, Yung-Cheng Lu, Li-Chi Yu, Sen-Hong Syue
  • Patent number: 11916132
    Abstract: Semiconductor devices and methods of manufacturing are presented in which inner spacers for nanostructures are manufactured. In embodiments a dielectric material is deposited for the inner spacer and then treated. The treatment may add material and cause an expansion in volume in order to close any seams that can interfere with subsequent processes.
    Type: Grant
    Filed: June 30, 2022
    Date of Patent: February 27, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wan-Yi Kao, Hung Cheng Lin, Che-Hao Chang, Yung-Cheng Lu, Chi On Chui
  • Publication number: 20230107892
    Abstract: To provide a negative type photosensitive composition which is capable of forming a cured film having good light shielding properties and high reflectance. [Means for Solution] A negative type photosensitive composition comprising an alkali-soluble resin having a particular structure, a reflectance modifier, a polymerization initiator, and a solvent.
    Type: Application
    Filed: March 5, 2021
    Publication date: April 6, 2023
    Inventors: Suryani LIN, Yi-Meng YEN, Yung-Cheng CHANG, Daishi YOKOYAMA, Atsuko NOYA
  • Patent number: 11554881
    Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.
    Type: Grant
    Filed: December 8, 2021
    Date of Patent: January 17, 2023
    Assignee: TENSOR TECH CO., LTD.
    Inventors: Po-Hsun Yen, Shang-Jung Lee, Yung-Cheng Chang, Sung-Liang Hou
  • Publication number: 20220388693
    Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.
    Type: Application
    Filed: December 8, 2021
    Publication date: December 8, 2022
    Applicant: TENSOR TECH CO., LTD.
    Inventors: Po-Hsun YEN, Shang-Jung LEE, Yung-Cheng CHANG, Sung-Liang HOU
  • Publication number: 20220388692
    Abstract: This patent presents an attitude determination and control system based on a Quaternion Kalman Filter (QKF) with an extendable number of sensors and actuators. Furthermore, it is compatible with the spherical motor as its attitude actuator. The system includes a processor with a QKF, at least one direct attitude actuator, and at least two environmental sensors. Firstly, system dynamics calculates a first propagation attitude determination result. Next, update the first propagation with the attitude sensor measurements. Then, control the satellite's attitude via the attitude actuator closer to the attitude command provided by the user. The proposed system dynamic model could adjust the number of actuators and sensors freely without reprogramming the algorithms for new missions with new configurations on the actuators and sensors. Moreover, if some components fail, the algorithm can automatically remove those related sequences to avoid the overall failure of the system.
    Type: Application
    Filed: September 1, 2021
    Publication date: December 8, 2022
    Applicant: TENSOR TECH CO., LTD.
    Inventors: Po-Hsun YEN, Shang-Jung LEE, Yung-Cheng CHANG, Sung-Liang HOU
  • Publication number: 20220267641
    Abstract: To provide a negative type photosensitive composition having excellent chemical resistance and capable of being cured at a low temperature. A negative type photosensitive composition comprising (I) a polysiloxane having a specific structure, (II) a polymerization initiator, (III) a compound containing two or more (meth)acryloyloxy groups, and (IV) a solvent.
    Type: Application
    Filed: July 22, 2020
    Publication date: August 25, 2022
    Inventors: Daishi YOKOYAMA, Atsuko NOYA, Cho-Ying LIN, Yung-Cheng CHANG
  • Patent number: 11404331
    Abstract: A system for determining the cause of an abnormality in a semiconductor manufacturing process includes an abnormality mode determination module, a selection module, and a root cause analysis module. The abnormality mode determination module is used to determine the similarity between wafer bin maps containing the abnormal data. When the similarity among the wafer maps is higher than a reference value, the selection module executes the steps of: determining a bad lot based on the wafer maps where the similarity is higher than the reference value; determining a time span within which the bad lot is generated; selecting other bad lots occurring in the time span and satisfying a failure model; selecting a good lot based on a fixed lot interval. The root cause analysis module is used to execute the steps of calculating the correlation among data to obtain confidence indexes.
    Type: Grant
    Filed: June 29, 2020
    Date of Patent: August 2, 2022
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Syuan-Rong Huang, Chien-Huei Yang, Chun-Fu Tung, Hua-Ming Wang, Yung-Cheng Chang
  • Patent number: 11355272
    Abstract: An electronic component comprising: a body; a conductive wire in the body; and a first lead comprising a first part disposed on a first surface of the body and a second part disposed on a second surface of the body, wherein the second part of the first lead comprises a first protrusion portion and a second protrusion portion spaced apart from each other, wherein a first portion of a first terminal part of the conductive wire is disposed between the first protrusion portion and the second part of the first lead disposed on the second surface of the body, and a second portion of the first terminal part of the conductive wire is disposed between the second protrusion portion and the second part of the first lead disposed on the second surface of the body.
    Type: Grant
    Filed: January 9, 2018
    Date of Patent: June 7, 2022
    Assignee: CYNTEC CO., LTD
    Inventors: Yung-Cheng Chang, Chih-Siang Chuang, Yi-Min Huang
  • Patent number: 11336166
    Abstract: A motor includes a stator with a first stator, a second stator, and a third stator, each including at least one stator coil, and a rotor including a magnetic element, a first bearing, a second bearing, and a shaft, the stators generating a superimposed magnetic field together causing the magnetic element to rotate. When the magnetic element rotates in the first plane, the outer ring of the first bearing rotates. The center of the first bearing is located in a plane where the second bearing is located, and when the magnetic element rotates in the second plane, the inner ring of the second bearing rotates. A central axis of the shaft passes through the center of the first bearing; wherein the shaft is rotatably fixed to the first bearing and connected to the second bearing.
    Type: Grant
    Filed: October 7, 2019
    Date of Patent: May 17, 2022
    Assignee: Tensor Tech Co., Ltd.
    Inventors: Po-Hsun Yen, Shang-Jung Lee, Yung-Cheng Chang, Sung-Liang Hou
  • Publication number: 20220071004
    Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate; a first silver nanowire layer disposed on the substrate; and a protective layer disposed on the first silver nanowire layer, wherein the protective layer is a patternable photoresist and has an identical pattern as the first silver nanowire layer.
    Type: Application
    Filed: August 27, 2020
    Publication date: March 3, 2022
    Inventors: Yung-Cheng Chang, Wei-Ting Tsai, Min-Yu Chen, Chung-Chin Hsiao
  • Publication number: 20220037052
    Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.
    Type: Application
    Filed: January 25, 2021
    Publication date: February 3, 2022
    Inventors: Yung-Cheng Chang, Min-Yu Chen, Yu-Wei Hou, Chung-Chin Hsiao
  • Patent number: 11227703
    Abstract: A transparent conductive film is disclosed. The transparent conductive film includes a substrate and a first silver nanowire layer. The transparent conductive film has a first absorption peak at 340 nm to 400 nm and a second absorption peak at 500 nm-650 nm, and a ratio of a maximum peak intensity of the first absorption peak to a maximum peak intensity of the second absorption peak is in a range of 2 to 5.5.
    Type: Grant
    Filed: January 25, 2021
    Date of Patent: January 18, 2022
    Assignee: Cambrios Film Solutions Corporation
    Inventors: Yung-Cheng Chang, Min-Yu Chen, Yu-Wei Hou, Chung-Chin Hsiao
  • Publication number: 20210407866
    Abstract: A system for determining the cause of an abnormality in a semiconductor manufacturing process includes an abnormality mode determination module, a selection module, and a root cause analysis module. The abnormality mode determination module is used to determine the similarity between wafer bin maps containing the abnormal data. When the similarity among the wafer maps is higher than a reference value, the selection module executes the steps of: determining a bad lot based on the wafer maps where the similarity is higher than the reference value; determining a time span within which the bad lot is generated; selecting other bad lots occurring in the time span and satisfying a failure model; selecting a good lot based on a fixed lot interval. The root cause analysis module is used to execute the steps of calculating the correlation among data to obtain confidence indexes.
    Type: Application
    Filed: June 29, 2020
    Publication date: December 30, 2021
    Inventors: Syuan-Rong Huang, Chien-Huei Yang, Chun-Fu Tung, Hua-Ming Wang, Yung-Cheng Chang
  • Patent number: 11029772
    Abstract: A transparent conductive laminated structure and touch panel are disclosed. The transparent conductive laminated structure comprises a first conductive film including a first surface and a second surface opposing the first surface. A first adhesive layer is disposed on the first surface of the first conductive film, and a protective film is disposed on the first adhesive layer. A peeling strength between the first adhesive layer and the first conductive film is greater than a peeling strength between the first adhesive layer and the protective film.
    Type: Grant
    Filed: July 21, 2020
    Date of Patent: June 8, 2021
    Assignee: Cambrios Film Solutions Corporation
    Inventors: Yung-Cheng Chang, Chia-Sheng Liao, Chung-Chin Hsiao