Abstract: A method of fabricating a semiconductor image sensor device is disclosed. A plurality of radiation-sensing regions is formed in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. An opening is formed in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The opening is then filled with an organic material.

Abstract: An alignment system includes a stage configured to retain an object, an image-capturing device configured to capture the image of the field of view of the microscope, and a processing module configured to generate a virtual mask and superimpose the virtual mask with the image of the object. In one embodiment of the present invention, a method for operating a virtual mask system includes the steps of generating a virtual mask, placing a first object on a stage, capturing at least one image of the first object, and superimposing the virtual mask with the image of the first object by adjusting a position or an inclined angle of the stage or adjusting a capturing position of an image-capturing device by considering at least the virtual mask and the image of the first object.

Abstract: A laser output control method and a laser output control device, including a luminous source in the optical interface of an optical transceiver, a proximity detector configured to detect and capture reflection intensity of a luminous beam from the luminous source, an optical processing circuit electrically connected to the proximity detector and configured to receive and process the reflection intensity, and a microcontroller configured to capture parametric information of the reflection intensity, are disclosed. The microcontroller is also electrically connected to a laser driver, to receive parametric information of the optical processing circuit and to regulate the laser and/or laser driver activity based on the parametric information. The laser output control device may effectively restrict the laser output activity and the total laser output energy, which may prevent exposing human eyes to relatively strong laser energy and enhance the security of laser usage and protection for the human body.

Abstract: A method of forming an image sensor device includes forming a light sensing region at a front surface of a silicon substrate and a patterned metal layer there over. Thereafter, the method also includes performing an ion implantation process to the back surface of the silicon substrate and performing a green laser annealing process to the implanted back surface of the silicon substrate. The green laser annealing process uses an annealing temperature greater than or equal to about 1100° C. for a duration of about 100 to about 400 nsec. After performing the green laser annealing process, a silicon polishing process is performed on the back surface of the silicon substrate.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.

Abstract: Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.

Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.

Abstract: A system for fabricating semiconductor products includes a list of products to be fabricated, a list of available semiconductor fabrication tools, a product and tool matrix database, and a product and tool selection engine. The product and tool matrix database is configured to include performance and manufacturing information for the products to be fabricated and the available tools. The product and tool selection engine is configured to generate an enhanced matching of the products to be fabricated and the available semiconductor fabrication tools.

Abstract: A WDM multiplexing/demultiplexing system includes a de-multiplexer configured to separate and guide light beams from an incident ray having a plurality of wavelengths to corresponding lenses on an optical device, a multiplexer configured to guide light beams from optical transmitters having various wavelengths through the corresponding lenses on the optical device and combine the light beams, a lens array including the corresponding lenses to receive and/or transmit the light beams from or to the de-multiplexer and multiplexer, and a light beam collimator configured to function with the multiplexer and de-multiplexer. The light beams received or transmitted by the light beam collimator and the light beams transmitted or received from or to the multiplexer and de-multiplexer are collinear. The light beam collimator and multiplexer/de-multiplexer can be easily positioned to predetermined or designed positions, thereby providing light beams output through the lenses in a plastic optical device.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.

Abstract: A wavelength division multiplexer/demultiplexer includes an optical block having a plurality of protrusions positioned at a first side, wherein at least one of the protrusions has a first inclined plane configured to reflect a light propagating in the optical block to a second inclined plane of the protrusion. Another wavelength division multiplexer/demultiplexer includes an optical block having a first side, a plurality of depressions indented from the first side, wherein at least one of the depressions has a first inclined plane configured to reflect a light to a second side and a second inclined plane configured to reflect the light from the second side.

Abstract: A flat display panel includes an array substrate and a color filter substrate facing each other. Multiple first electrodes and second electrodes are formed on the array substrate. The first electrodes receive scan signals transmitted from a driving circuit, and each of the second electrodes is connected to a corresponding scan line. Multiple signal lines are formed on the color filter substrate and in an active display area. Besides, multiple third electrodes and forth electrodes are formed on the color filter substrate. Each of the third electrodes is electrically connected to a corresponding forth electrode by a corresponding signal line, each of the third electrodes is electrically connected to a corresponding first electrode, and each of the forth electrodes is electrically connected to a corresponding second electrode.

Abstract: A display panel includes a first substrate, a conductive light-shielding pattern, color filter patterns, a second substrate, scan lines, data lines, pixel structures, third pads and fourth pads. The conductive light-shielding pattern disposed on the first substrate defines conductive matrix pattern, first pads, and second pads. Each first pad is electrically connected to one corresponding second pad through the conductive matrix pattern and insulated with other second pads. The color filter patterns are disposed on the first substrate and a portion of each color filter pattern overlaps the conductive light-shielding pattern. The third pads are one-to-one electrically to the first pads while the fourth pads are one-to-one electrically connected to the second pads. Each fourth pad is electrically connected to one of the scan lines and one of the data lines.

Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.

Abstract: The present disclosure relates to a process tool system that utilizes tool sensor data and an embedded or built-in tool model to facilitate semiconductor fabrication. The process tool system includes a sensor data component, the tool model, and an execution system. The sensor data component is configured to provide the tool sensor data. The tool model is built in a process tool and is configured to generate model outputs based on model inputs. The manufacturing execution system is configured to provide tool process data, including actual metrology and previous process data, to the sensor data component. Additionally, the execution system provides the model inputs to the tool model and receives the model outputs from the tool model. The execution system provides one or more execution system outputs based on the sensor data and the model outputs. The sensor data can include measured semiconductor device characteristics.

Abstract: A transflective liquid crystal display is provided which includes a color-filter substrate, an active matrix substrate, and a liquid crystal layer interposed between them. The active matrix substrate includes a first transparent substrate and includes a plurality of switching devices, a plurality of transparent pixel electrodes and a plurality of reflective pixel electrodes formed on the first transparent substrate. The color-filter substrate includes a second transparent substrate, a first and second transparent conducting layers and a dielectric layer. The first transparent conducting layer is interposed between the second transparent substrate and the second transparent conducting layer, and the dielectric layer is interposed between the first and second transparent conducting layers. The second transparent conducting layer in each pixel area has at least one opening. The openings positionally correspond to the reflective pixel electrodes.

Abstract: A laser output control method and a laser output control device, including a luminous source in the optical interface of an optical transceiver, a proximity detector configured to detect and capture reflection intensity of a luminous beam from the luminous source, an optical processing circuit electrically connected to the proximity detector and configured to receive and process the reflection intensity, and a microcontroller configured to capture parametric information of the reflection intensity, are disclosed. The microcontroller is also electrically connected to a laser driver, to receive parametric information of the optical processing circuit and to regulate the laser and/or laser driver activity based on the parametric information. The laser output control device may effectively restrict the laser output activity and the total laser output energy, which may prevent exposing human eyes to relatively strong laser energy and enhance the security of laser usage and protection for the human body.

Abstract: A system and method for image sensing is disclosed. An embodiment comprises a substrate with a pixel region, the substrate having a front side and a backside. A co-implant process is performed along the backside of the substrate opposing a photosensitive element positioned along the front side of the substrate. The co-implant process utilizes a first pre-amorphization implant process that creates a pre-amorphization region. A dopant is then implanted wherein the pre-amorphization region retards or reduces the diffusion or tailing of the dopants into the photosensitive region. An anti-reflective layer, a color filter, and a microlens may also be formed over the co-implant region.

Abstract: Provided is a semiconductor image sensor device that includes a non-scribe-line region and a scribe-line region. The image sensor device includes a first substrate portion disposed in the non-scribe-line region. The first substrate portion contains a doped radiation-sensing region. The image sensor device includes a second substrate portion disposed in the scribe-line region. The second substrate portion has the same material composition as the first substrate portion. Also provided is a method of fabricating an image sensor device. The method includes forming a plurality of radiation-sensing regions in a substrate. The radiation-sensing regions are formed in a non-scribe-line region of the image sensor device. The method includes forming an opening in a scribe-line region of the image sensor device by etching the substrate in the scribe-line region. A portion of the substrate remains in the scribe-line region after the etching. The method includes filling the opening with an organic material.

Abstract: Provided is a semiconductor image sensor device. The image sensor device includes a semiconductor substrate that includes an array region and a black level correction region. The array region contains a plurality of radiation-sensitive pixels. The black level correction region contains one or more reference pixels. The substrate has a front side and a back side. The image sensor device includes a first compressively-stressed layer formed on the back side of the substrate. The first compressively-stressed layer contains silicon nitride. The image sensor device includes a metal shield formed on the compressively-stressed layer. The metal shield is formed over at least a portion of the black level correction region. The image sensor device includes a second compressively-stressed layer formed on the metal shield and the first compressively-stressed layer. The second compressively-stressed layer contains silicon oxide. A sidewall of the metal shield is protected by the second compressively-stressed layer.