Patents by Inventor Yung-Hsiang Chen
Yung-Hsiang Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12195866Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.Type: GrantFiled: July 28, 2023Date of Patent: January 14, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Hsiang Chen, Hung-San Lu, Ting-Ying Wu, Chuang Chihchous, Yu-Lung Yeh
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Publication number: 20250014508Abstract: Disclosed are a display panel and a pixel circuit thereof. The pixel circuit includes a driving transistor, a data write-in circuit, a compensation circuit, a voltage control circuit, a light-emitting switch, and a light-emitting element. The driving transistor receives a power supply voltage. The data write-in circuit receives a first scanning signal, an emission signal, and a write-in data signal, stores the write-in data signal, and provides the write-in data signal to a control end of the driving transistor. The compensation circuit has a first switch and a second switch coupled to a relay end and controlled by a second scanning signal. The voltage control circuit adjusts a voltage difference between the control end of the driving transistor and the relay end. The light-emitting switch is coupled between a second end of the driving transistor and the light-emitting element, and is controlled by the emission signal.Type: ApplicationFiled: June 17, 2024Publication date: January 9, 2025Applicant: AUO CorporationInventors: Ying-Chieh Chen, Yung-Hsiang Lan
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Patent number: 12189306Abstract: A method includes providing a workpiece to a semiconductor apparatus, the workpiece including a material layer including a first strip having: a first plurality of exposure fields; and a second plurality of exposure fields alternatingly arranged with the first plurality of exposure fields. The method further includes: scanning the first strip along a first scan route from a first side of the workpiece to a second side of the workpiece to generate first topography measurement data; scanning the first strip along a second scan route from the second side to the first side to generate second topography measurement data; and exposing the first plurality of exposure fields and exposing the second plurality of exposure fields according to the first topography measurement data and the second topography measurement data.Type: GrantFiled: October 23, 2023Date of Patent: January 7, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Yung-Yao Lee, Yeh-Chin Wang, Yang-Ann Chu, Yung-Hsiang Chen, Yung-Cheng Chen
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Patent number: 12165947Abstract: A method includes forming a transistor over a front side of a substrate, in which the transistor comprises a channel region, a gate region over the channel region, and source/drain regions on opposite sides of the gate region; forming a front-side interconnect structure over the transistor, wherein the front-side interconnect structure includes a dielectric layer and conductive features; and bonding the front-side interconnect structure to a carrier substrate via a bonding layer, in which the bonding layer is between the front-side interconnect structure and the carrier substrate, and the bonding layer has a higher thermal conductivity than the dielectric layer of the front-side interconnect structure.Type: GrantFiled: March 30, 2021Date of Patent: December 10, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wen-Sheh Huang, Yung-Shih Cheng, Jiing-Feng Yang, Yu-Hsiang Chen, Chii-Ping Chen
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Publication number: 20240391761Abstract: A method is provided that includes forming a first metal layer of a seal structure over a micro-electromechanical system (MEMS) structure and over a channel formed through the MEMS structure to an integrated circuit of a semiconductor structure. The first metal layer is formed at a first temperature. The method includes forming a second metal layer over the first metal layer. The second metal layer is formed at a second temperature less than the first temperature. The method includes performing a first cooling process to cool the semiconductor structure.Type: ApplicationFiled: July 31, 2024Publication date: November 28, 2024Inventors: Kai-Lan CHANG, Yu-Lung YEH, Yen-Hsiu CHEN, Shuo Yen TAI, Yung-Hsiang CHEN
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Patent number: 12154964Abstract: A semiconductor device includes an interface layer on a substrate, a gate dielectric layer on the interface layer, and a work function metal layer on the gate dielectric layer. An interface between the interface layer and the gate dielectric layer has a concentration of a dipole-inducing element. The semiconductor device also includes an oxygen blocking layer on the work function metal layer and a metal fill layer on the oxygen blocking layer.Type: GrantFiled: November 22, 2021Date of Patent: November 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: An-Hung Tai, Yung-Hsiang Chan, Shan-Mei Liao, Hsin-Han Tsai, Jian-Hao Chen, Kuo-Feng Yu
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Publication number: 20240387277Abstract: A method includes forming a first gate dielectric, a second gate dielectric, and a third gate dielectric over a first semiconductor region, a second semiconductor region, and a third semiconductor region, respectively. The method further includes depositing a first lanthanum-containing layer overlapping the first gate dielectric, and depositing a second lanthanum-containing layer overlapping the second gate dielectric. The second lanthanum-containing layer is thinner than the first lanthanum-containing layer. An anneal process is then performed to drive lanthanum in the first lanthanum-containing layer and the second lanthanum-containing layer into the first gate dielectric and the second gate dielectric, respectively. During the anneal process, the third gate dielectric is free from lanthanum-containing layers thereon.Type: ApplicationFiled: July 25, 2024Publication date: November 21, 2024Inventors: Wen-Hung Huang, Kuo-Feng Yu, Jian-Hao Chen, Shan-Mei Liao, Jer-Fu Wang, Yung-Hsiang Chan
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Publication number: 20240387586Abstract: One or more semiconductor processing tools may deposit a contact etch stop layer on a substrate. In some implementations, the contact etch stop layer is comprised of less than approximately 12 percent hydrogen. Depositing the contact etch stop layer may include depositing contact etch stop layer material at a temperature of greater than approximately 600 degrees Celsius, at a pressure of greater than approximately 150 torr, and/or with a ratio of at least approximately 70:1 of NH3 and SiH4, among other examples. The one or more semiconductor processing tools may deposit a silicon-based layer above the contact etch stop layer. The one or more semiconductor processing tools may perform an etching operation into the silicon-based layer until reaching the contact etch stop layer to form a trench isolation structure.Type: ApplicationFiled: July 26, 2024Publication date: November 21, 2024Inventors: Cheng-Hsien CHEN, Yung-Hsiang CHEN, Chia Hao LI, Yu-Lung YEH, Yen-Hsiu CHEN
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Publication number: 20240387682Abstract: A method of forming a semiconductor device includes removing a dummy gate structure to expose a channel region, depositing an interface layer on the channel region, depositing a gate dielectric layer on the interface layer, and forming a doping layer on the gate dielectric layer. The doping layer includes a dipole-inducing element. The method also includes annealing the doping layer to drive the dipole-inducing element through the gate dielectric layer, removing the doping layer, forming a work function metal layer on the gate dielectric layer, depositing an oxygen blocking layer on the work function metal layer, and forming a gate metal fill layer on the oxygen blocking layer.Type: ApplicationFiled: July 25, 2024Publication date: November 21, 2024Inventors: An-Hung Tai, Yung-Hsiang Chan, Shan-Mei Liao, Hsin-Han Tsai, Jian-Hao Chen, Kuo-Feng Yu
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Publication number: 20240387639Abstract: A semiconductor structure includes a stack of nanostructures, an interfacial layer wrapping around each nanostructure of the stack of nanostructures, a first gate dielectric layer wrapping around the interfacial layer and each nanostructure of the stack of nanostructures, and a gate electrode layer disposed over the first gate dielectric layer. The first gate dielectric layer includes a dipole element. A first concentration of the dipole element at a center line of the first gate dielectric layer is greater than a second concentration of the dipole element at a boundary surface of the first gate dielectric layer interfacing the interfacial layer.Type: ApplicationFiled: July 26, 2024Publication date: November 21, 2024Inventors: Shan-Mei Liao, Yung-Hsiang Chan, Yao-Teng Chuang, Jian-Hao Chen, Kuo-Feng Yu
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Publication number: 20240379444Abstract: A method includes providing a substrate, a dummy fin, and a stack of semiconductor channel layers; forming an interfacial layer wrapping around each of the semiconductor channel layers; depositing a high-k dielectric layer, wherein a first portion of the high-k dielectric layer over the interfacial layer is spaced away from a second portion of the high-k dielectric layer on sidewalls of the dummy fin by a first distance; depositing a first dielectric layer over the dummy fin and over the semiconductor channel layers, wherein a merge-critical-dimension of the first dielectric layer is greater than the first distance thereby causing the first dielectric layer to be deposited in a space between the dummy fin and a topmost layer of the stack of semiconductor channel layers, thereby providing air gaps between adjacent layers of the stack of semiconductor channel layers and between the dummy fin and the stack of semiconductor channel layers.Type: ApplicationFiled: July 14, 2024Publication date: November 14, 2024Inventors: Chia-Hao Pao, Chih-Chuan Yang, Shih-Hao Lin, Kian-Long Lim, Chih-Wei Lee, Chien-Yuan Chen, Jo-Chun Hung, Yung-Hsiang Chan, Yu-Kuan Lin, Lien-Jung Hung
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Patent number: 12142640Abstract: A method includes receiving a workpiece having a first stack of semiconductor layers in a first region and a second stack of semiconductor layers in a second region; forming a first gate dielectric layer surrounding each layer of the first stack and a second gate dielectric layer surrounding each layer of the second stack; forming a first dipole layer surrounding the first gate dielectric layer and merging between vertically adjacent portions of the first gate dielectric layer, and a second dipole layer surrounding the second gate dielectric layer and merging between vertically adjacent portions of the second gate dielectric layer; removing the first dipole layer; after the removing of the first dipole layer, conducting a first annealing on the workpiece; removing a remaining portion of the second dipole layer; and forming a gate electrode layer in the first region and the second region.Type: GrantFiled: September 22, 2021Date of Patent: November 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shan-Mei Liao, Yung-Hsiang Chan, Yao-Teng Chuang, Jian-Hao Chen, Kuo-Feng Yu
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Publication number: 20240355684Abstract: A wafer stacking method includes the following steps. A first wafer is provided. A second wafer is bonded to the first wafer to form a first wafer stack structure. A first edge defect inspection is performed on the first wafer stack structure to find a first edge defect and measure a first distance in a radial direction between an edge of the first wafer stack structure and an end of the first edge defect away from the edge of the first wafer stack structure. A first trimming process with a range of a first width is performed from the edge of the first wafer stack structure to remove the first edge defect. Herein, the first width is greater than or equal to the first distance.Type: ApplicationFiled: May 4, 2023Publication date: October 24, 2024Applicant: Powerchip Semiconductor Manufacturing CorporationInventors: Chih Feng Sung, Wei Han Huang, Ming-Jui Tsai, Yu Chi Chen, Yung-Hsiang Chang, Chun-Lin Lu, Shih-Ping Lee
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Patent number: 12124293Abstract: An electronic device is provided. The electronic device includes a first body with a base and a movable member, a second body, a lifting member, and a linkage mechanism. The movable member is located on an upper surface of the base and includes a first side and a second side. The first side is pivotally connected to the base. The second body is pivotally connected to the second side by using a first rotary shaft. The lifting member is pivotally connected to the movable member by using a second rotary shaft. The linkage mechanism is disposed on the movable member, is linked to the second body by using the first rotary shaft, and drives the lifting member to rotate by using the second rotary shaft. When the second body is opened upward, an air outlet on a rear side of the first body is prevented from being covered.Type: GrantFiled: February 22, 2022Date of Patent: October 22, 2024Assignee: ASUSTEK COMPUTER INC.Inventors: Yung-Hsiang Chen, Li-Wei Hung
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Publication number: 20240347571Abstract: A semiconductor device is provided. The semiconductor device includes a first deep trench isolation (DTI) structure within a substrate. The first DTI structure includes a barrier structure, a dielectric structure, and a copper structure. The dielectric structure is between the barrier structure and the copper structure. The barrier structure is between the substrate and the dielectric structure.Type: ApplicationFiled: June 27, 2024Publication date: October 17, 2024Inventors: Yung-Hsiang CHEN, Yu-Lung YEH, Yen-Hsiu CHEN, Bo-Chang SU, Cheng-Hsien CHEN
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Publication number: 20240332382Abstract: A semiconductor structure includes a substrate, a first transistor disposed over the substrate and including a first channel, a first interfacial layer over the first channel, a first gate dielectric layer over the first interfacial layer, and a first gate electrode layer over the first gate dielectric layer, and a second transistor disposed over the substrate and including a second channel, a second interfacial layer over the second channel, a second gate dielectric layer over the second interfacial layer, and a second gate electrode layer over the second gate dielectric layer. The first gate dielectric layer includes a first dipole material composition having a first maximum concentration at a half-thickness line of the first gate dielectric layer. The second gate dielectric layer includes a second dipole material composition having a second maximum concentration at a half-thickness line of the second gate dielectric layer and greater than the first maximum concentration.Type: ApplicationFiled: June 10, 2024Publication date: October 3, 2024Inventors: Yung-Hsiang Chan, Shan-Mei Liao, Wen-Hung Huang, Jian-Hao Chen, Kuo-Feng Yu, Mei-Yun Wang
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Publication number: 20240321626Abstract: A semiconductor structure includes a ceramic substrate, a first bonding layer, a second bonding layer, a cavity, and a semiconductor layer. The ceramic substrate includes holes on its surface. The first bonding layer is disposed on the surface of the ceramic substrate, and the second bonding layer is bonded to the first bonding layer. The cavity is disposed above the hole and enclosed by the first bonding layer and the second bonding layer. The semiconductor layer extends over the cavity and is disposed along the surface of the second bonding layer.Type: ApplicationFiled: May 29, 2024Publication date: September 26, 2024Applicant: Vanguard International Semiconductor CorporationInventors: Yang Du, Yung-Fong Lin, Tsung-Hsiang Lin, Yu-Chieh Chou, Cheng-Tao Chou, Yi-Chun Lu, Chun-Hsu Chen
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Publication number: 20240297261Abstract: A semiconductor device includes a substrate, a buffer layer, a gradient layer, an active layer, a window layer, and an optical filtering layer. The substrate includes a first element and a second element. The buffer layer is disposed on the substrate. The gradient layer is formed on the buffer layer, and includes sublayers. Each sublayer includes the first, second, and third elements. For each sublayer, a lattice constant thereof is adjusted by changing a ratio of the second element to the third element. The active layer is formed on the gradient layer, and includes the first, second, and third elements. The window layer is formed on the active layer. The optical filtering layer includes the first, second, and third elements, and is formed on the window layer to block a portion of light having a wavelength in a predetermined wavelength range.Type: ApplicationFiled: March 1, 2024Publication date: September 5, 2024Inventors: Hung-Wen HUANG, Yung-Chao CHEN, Yi-Hsiang WANG, Wei LIN
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Patent number: 12080604Abstract: A method includes providing a substrate, a dummy fin, and a stack of semiconductor channel layers; forming an interfacial layer wrapping around each of the semiconductor channel layers; depositing a high-k dielectric layer, wherein a first portion of the high-k dielectric layer over the interfacial layer is spaced away from a second portion of the high-k dielectric layer on sidewalls of the dummy fin by a first distance; depositing a first dielectric layer over the dummy fin and over the semiconductor channel layers, wherein a merge-critical-dimension of the first dielectric layer is greater than the first distance thereby causing the first dielectric layer to be deposited in a space between the dummy fin and a topmost layer of the stack of semiconductor channel layers, thereby providing air gaps between adjacent layers of the stack of semiconductor channel layers and between the dummy fin and the stack of semiconductor channel layers.Type: GrantFiled: July 31, 2023Date of Patent: September 3, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chia-Hao Pao, Chih-Chuan Yang, Shih-Hao Lin, Kian-Long Lim, Chih-Wei Lee, Chien-Yuan Chen, Jo-Chun Hung, Yung-Hsiang Chan, Yu-Kuan Lin, Lien-Jung Hung
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Publication number: 20240268120Abstract: A semiconductor structure is provided. The semiconductor structure includes a first substrate, a first circuit layer, a memory array structure, a bonding layer, a second circuit layer, and a second substrate. The first circuit layer is disposed on the first substrate. The memory array structure is disposed on the first circuit layer. The bonding layer is disposed on the memory array structure. The second circuit layer is disposed on the bonding layer. The second substrate is disposed on the second circuit layer.Type: ApplicationFiled: February 8, 2023Publication date: August 8, 2024Inventors: Yung-Hsiang CHEN, Tao-Cheng LU, Yao-Wen CHANG