Abstract: A pixel structure for a vertical emissive-reflective (emi-flective) display is provided. The pixel structure has a substrate, a self-light emitting pixel unit arranged on the substrate, and a reflective pixel unit arranged on the self-light emitting pixel unit. By using the vertical pixel structure, the aperture of the display can be increased, and the power consumption can also be decreased.

Abstract: A thin-film transistor (TFT) and a method for manufacturing the thin-film transistor using a color filter as a dielectric layer so as to drive an organic light-emitting diode. The thin-film transistor comprises: a substrate; a first poly-silicon mesa formed on the substrate; an insulating layer formed on the substrate and covering the first poly-silicon mesa; a gate metal layer formed on the insulating layer; a color-filtering dielectric layer formed on the insulating layer and covering the gate metal layer, the dielectric layer being provided with a plurality of contact holes penetrating through the dielectric layer and the insulating layer; and a conductive layer formed on the dielectric layer and coupled to the first poly-silicon mesa through the contact holes.

Abstract: A driving circuit for a light emitting element, electrically connected to a data line and a scan line and powered by a bias voltage so as to drive the light emitting element, comprising: a first transistor, further comprising: a first gate, electrically connected to the scan line; and a first drain/source, having a first node electrically connected to the data line and a second node; and a second transistor, further comprising: a second gate, electrically connected to the second node of the first drain/source; and a second drain/source, having a first node electrically connected to the bias voltage, and a second node electrically connected to the light emitting element; wherein, an insulation layer and a layer of non-volatile material is formed successively between the semiconductor layer and the second gate of the second transistor.

Abstract: A novel protection structure for protecting field emission elements in a field emission display device from burnout damage due to electrical current surges induced to the device cathode by ionized gases in the device. The protection structure includes one or multiple reduction plates or electrodes which are typically provided on the cathode. The reduction plate or plates are negatively-charged and attract positively charged gas ions. Consequently, induction of electrical current surges to the cathode is avoided, thereby preventing burnout damage to the field emission elements.

Abstract: A top emitting OLED is provided. The top emitting OLED comprises a substrate, a first electrode layer, an organic layer, and a second electrode layer. Wherein, the first electrode layer is formed on the substrate, the organic layer is formed on the first electrode layer, and the second electrode layer with a first refractive index is formed on the organic layer. Moreover, an anti-reflective layer with a second refractive index is formed on the second electrode layer. The first refractive index is different from the second refractive index, and the first thickness is matched and cooperated with the second thickness for reducing the reflectance of the OLED on visible light region.

Abstract: The present invention discloses an active organic light emitting diode (AOLED) display structure. A color filter and thin film transistor organic light emitting diode (TFT-OLED) are incorporated on one substrate of the AOLED. Moreover, a Indium Tin Oxide(ITO)layer of the AOLED is deposited with a black matrix layer so as to lower light leakage effect and increase the contrast and color purity level in between pixels of the display. By adopting such technology, a flat panel display having large area, high resolution and low product cost is accordingly implemented.

Abstract: A TFT with a microcrystalline film. The channel is composed by a microcrystalline silicon layer and an amorphous silicon layer. The microcrystalline silicon layer is disposed near the gate electrode as the first channel layer, providing a current flow path in a horizontal orientation. The amorphous silicon layer is disposed away from the gate electrode as the second channel layer, providing a current flow path in a vertical orientation. Accordingly, the driving current of the transistor can be elevated due to the high conductivity of the microcrystalline silicon layer. Moreover, unnecessary current occurring when the transistor is switched off is reduced due to the high resistance of the amorphous silicon layer.

Abstract: An active matrix organic light emitting diode display pixel structure. In the pixel structure of the present invention, a switching transistor has a gate terminal coupled to a scan signal and a source terminal coupled to a data signal. A storage capacitor has two terminals coupled to a drain terminal of the first transistor and a reference voltage respectively. An OLED has an anode coupled to a drain terminal of the second transistor and a cathode coupled to a first voltage. A plurality of driving transistors is coupled in cascode, wherein the first terminal of the first diving transistor of the driving transistors is coupled to a second voltage, and a second terminal of the final diving transistor of the driving transistors is coupled to the anode of the OLED, and an equivalent channel width/length (W/L) ratio of the driving transistors does not exceed 0.2.

Abstract: A dual-panel active matrix organic electroluminescent display comprises an organic electroluminescent display panel, an active matrix panel, and a conducting and adhesive material between these two panels. The organic electroluminescent display panel and the active matrix panel are fabricated separately and then adhered and bonded together. Therefore, the layout portion of a polycrystalline-silicon TFT can be increased. If a heat and pressure adhering method is used to bond the two panels, a transparent light-conducting region is not required for the pixels on the active matrix panel. If a UV light exposure adhering method is used, only a small transparent region is reserved for UV light curing. As a result, the lighting area of the organic electroluminescent display is almost 100%.

Abstract: A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitting diodes or polymer light-emitting diodes as electroluminescent media. The low-temperature poly Si (LTPS) thin film transistors provide a current to the OLED device and serve as an active driving device. The color changing medium changes blue light into red or green light to form full-color OLED. The processing steps include the black matrix process, the island process, the gate process, the interlayer process, the color changing medium process, and the OLED deposition process. Because a color changing medium is integrated on the LTPS thin film transistors, this invention can make display devices of high resolution, high luminous efficiency and wide viewing angle.

Abstract: A pixel structure of an active matrix full-color OLED display device and its manufacturing method are provided. The pixel structure of the display device comprises two thin film transistors, a storage capacitor, a color filter, and an OLED device structure constructed on a top surface of a substrate, a black matrix region outside the color filter region and under the thin film transistors. In this pixel, structure of the OLED display device, the OLED device structure and the color filter are integrated in a thin-film-transistor array. This simplifies the process, reduces the leakage of light and increases the contrast of the display device. A white OEL device is used to emit light. A light then passes a color filter to get red, green or blue color of light. Therefore, a full-color OLED is formed. A poly-silicon thin film transistor is used to provide current to the OLED device structure and served as an active drive device.

Abstract: A pixel structure of a full-color organic light-emitting diode (OLED) display device comprises a black matrix, a color changing medium, two thin film transistors, a storage capacitor, and an OLED device arranged on a substrate. The pixel structure of the display device uses blue organic light-emitting diodes or polymer light-emitting diodes as electroluminescent media. The low-temperature poly Si (LTPS) thin film transistors provide a current to the OLED device and serve as an active driving device. The color changing medium changes blue light into red or green light to form full-color OLED. The processing steps include the black matrix process, the island process, the gate process, the interlayer process, the color changing medium process, and the OLED deposition process. Because a color changing medium is integrated on the LTPS thin film transistors, this invention can make display devices of high resolution, high luminous efficiency and wide viewing angle.