Abstract: Disclosed herein is a method for treating and/or preventing a lymphangiogenesis-associated disease in a subject, including administering to the subject a therapeutically effective amount of a dihydrolipoic acid (DHLA)-coated gold nanocluster about 0.1 to 10 nm in diameter. Also disclosed is a method for promoting lymphangiogenesis in a subject, including administering to the subject an effective amount of said DHLA-coated gold nanocluster.

Abstract: A method for fabricating a semiconductor device includes forming a trench extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a gate dielectric layer lining the trench. The method also includes forming a gate electrode layer in the trench and over the top surface of the semiconductor substrate, and forming a bit line structure over a S/D region of the semiconductor structure. The bit line structure includes a protection liner having a U-shaped profile and in direct contact with an upper portion of the gate dielectric layer. The formation of the gate electrode layer includes performing a first deposition process, performing a first etching process after the first deposition process, and performing a second deposition process after the first etching process.

Abstract: The present application discloses a semiconductor device including a first isolation structure, a second isolation structure, and a third isolation structure disposed in a semiconductor substrate. The semiconductor device further includes a transistor and a resistor. The transistor is disposed between the first isolation structure and the second isolation structure, and includes a gate electrode and a first source/drain (S/D) region. The resistor is disposed between the second isolation structure and the third isolation structure, and includes a resistor electrode. The first S/D region is disposed between the gate electrode and the second isolation structure, and is electrically connected to the resistor electrode.

Abstract: A method for fabricating a semiconductor device includes forming a trench extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a gate dielectric layer lining the trench. The method also includes forming a gate electrode layer in the trench and over the top surface of the semiconductor substrate, and forming a bit line structure over a S/D region of the semiconductor structure. The bit line structure includes a protection liner having a U-shaped profile and in direct contact with an upper portion of the gate dielectric layer. The formation of the gate electrode layer includes performing a first deposition process, performing a first etching process after the first deposition process, and performing a second deposition process after the first etching process.

Abstract: A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.

Abstract: A color calibrator includes a first casing, a second casing and an optical sensor. The first casing has an accommodating recess and a plurality of first positioning members, wherein the first positioning members are arranged along an axial direction of the accommodating recess. The second casing is telescopically disposed in the accommodating recess. The second casing has a second positioning member. One of the first positioning member and the second positioning member is a magnet. Another one of the first positioning member and the second positioning member is a magnet or a magnetic induction material. The second positioning member cooperates with one of the first positioning members to position the second casing at one of a plurality of telescopic positions with respect to the first casing. The optical sensor is disposed on the second casing.

Abstract: The present application discloses a semiconductor device including a first isolation structure, a second isolation structure, and a third isolation structure disposed in a semiconductor substrate. The semiconductor device further includes a transistor and a resistor. The transistor is disposed between the first isolation structure and the second isolation structure, and includes a gate electrode and a first source/drain (S/D) region. The resistor is disposed between the second isolation structure and the third isolation structure, and includes a resistor electrode. The first S/D region is disposed between the gate electrode and the second isolation structure, and is electrically connected to the resistor electrode.

Abstract: Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.

Abstract: Disclosed is an electrical discharge machining apparatus at least comprising a carrier platform, an electrical discharge machining unit and a repairing device. The carrier platform is used for carrying at least one to-be-machined object. The electrical discharge machining unit comprises at least one electrode and a power supply unit, and is used for performing an electrical discharge machining procedure on a machined target area of the to-be-machined object by the electrode along a machining direction. When there is an area to be repaired on an appearance of the electrode, the repairing device performs a repairing procedure on the electrode, thereby achieving effects of stable electrical discharge and preventing short-circuit problem in the electrical discharge machining procedure.

Abstract: Disclosed is an electrical discharge machining apparatus at least comprising a carrier platform and an electrical discharge machining unit. The carrier platform is used to carry at least one to-be-machined object. The electrical discharge machining unit comprises an electrode, a jig and a power supply unit. When the electrical discharge machining unit performs an electrical discharge machining procedure on a machined target area of the to-be-machined object along a machining direction, an electrical discharge section of the electrode and the machined target area of the to-be-machined object move relatively. The invention is capable of improving a machining procedure, saving an overall machining time and saving a time required for electrode replacement.

Abstract: An electrical discharge machining apparatus and an electrical discharge machining method with adjustable machining parameters comprise a carrier and an electrical discharge machining (EDM) unit. The carrier is used for placing a to-be-machined object defined with a machining target area. A discharge electrode of the electrical discharge machining (EDM) unit is used to cut the machining target area of the to-be-machined object along a first cutting direction with at least one machining parameter, the machining parameter is correspondingly adjusted when a specified parameter of the to-be-machined object changes to a first numerical value, thereby using the adjusted machining parameter to perform a second cutting step on the machining target area of the to-be-machined object. A segmented cutting technology for solving a problem that a cutting speed (mm2/min) is slowed down and a total cutting time is prolonged due to changes of the specified parameter of electrical discharge machining cutting.

Abstract: The present application discloses a semiconductor device including a first isolation structure, a second isolation structure, and a third isolation structure disposed in a semiconductor substrate. The semiconductor device further includes a transistor and a resistor. The transistor is disposed between the first isolation structure and the second isolation structure, and includes a gate electrode and a first source/drain (S/D) region. The resistor is disposed between the second isolation structure and the third isolation structure, and includes a resistor electrode. The first S/D region is disposed between the gate electrode and the second isolation structure, and is electrically connected to the resistor electrode.

Abstract: A method for fabricating a semiconductor device includes forming a trench extending from a top surface of a semiconductor substrate into the semiconductor substrate, and forming a gate dielectric layer lining the trench. The method also includes forming a gate electrode layer in the trench and over the top surface of the semiconductor substrate, and forming a bit line structure over a S/D region of the semiconductor structure. The bit line structure includes a protection liner having a U-shaped profile and in direct contact with an upper portion of the gate dielectric layer. The formation of the gate electrode layer includes performing a first deposition process, performing a first etching process after the first deposition process, and performing a second deposition process after the first etching process.

Abstract: The present application discloses a method for fabricating a semiconductor device using a tilted etch process. The method includes forming an etching stop layer on a substrate, forming a target layer on the etching stop layer, forming a first hard mask layer on the target layer, forming second hard mask layers on the first hard mask layer, performing a first tilted etch process on the first hard mask layer to form first openings along the first hard mask layer and adjacent to first sides of the second hard mask layers, and performing a second tilted etch process on the first hard mask layer to form second openings along the first hard mask layer and adjacent to second sides of the second hard mask layers.

Abstract: A multifunctional laser processing apparatus includes a hollow milling shaft, a light path tool holder, a tool-holder-type melting module, a laser light source, and a temperature sensor. The hollow milling shaft includes a first light path channel and a connection portion. The light path tool holder can be connected to the connection portion. The light path tool holder has a second light path channel communicating with the first light path channel. The tool-holder-type melting module can be connected to the connection portion. The tool-holder-type melting module has a third light path channel communicating with the first light path channel. The laser light source is configured to emit a laser light beam toward the first light path channel. The temperature sensor is disposed on an outer surface of the hollow milling shaft and is configured to sense a temperature of a work piece during a multifunctional processing process.

Abstract: A processing device and a processing method for a solid structure are used to perform a processing procedure on the solid structure. The processing device for the solid structure of the invention provides energy to the solid structure by various electromagnetic radiation sources to cause the solid structure to generate qualitative changes or defects, that is, to form a modified layer. Stress and/or hardness of the modified layer are/is different from that of other non-processed areas.

Abstract: An electrical discharge machining apparatus and an electrical discharge machining method with adjustable machining parameters comprise a carrier and an electrical discharge machining (EDM) unit. The carrier is used for placing a to-be-machined object defined with a machining target area. A discharge electrode of the electrical discharge machining (EDM) unit is used to cut the machining target area of the to-be-machined object along a first cutting direction with at least one machining parameter, the machining parameter is correspondingly adjusted when a specified parameter of the to-be-machined object changes to a first numerical value, thereby using the adjusted machining parameter to perform a second cutting step on the machining target area of the to-be-machined object. A segmented cutting technology for solving a problem that a cutting speed (mm2/min) is slowed down and a total cutting time is prolonged due to changes of the specified parameter of electrical discharge machining cutting.

Abstract: Disclosed is an annealing system integrated with laser and microwave. The annealing system is provided with a microwave system, a laser system, and a measurement and control system. The microwave system provides a microwave energy to a first area of a to-be-annealed object for annealing the first area of the to-be-annealed object. The laser system uses a laser to provide a laser energy to a second area of the to-be-annealed object for annealing the second area of the to-be-annealed object. The measurement and control system monitors and controls a power of a microwave and/or a laser. The annealing system is capable of reducing a time required for an overall annealing, and also capable of avoiding cracks or defects caused by large stress differences.