Abstract: The present application discloses a method for fabricating a semiconductor device using a tilted etch process. The method for fabricating the semiconductor device includes providing a target layer, forming a first hard mask layer on the target layer, forming second hard mask layers on the first hard mask layer, performing a first tilted etch process on the first hard mask layer to form first openings along the first hard mask layer and adjacent to first sides of the second hard mask layers, and performing a second tilted etch process on the first hard mask layer to form second openings along the first hard mask layer and adjacent to second sides of the second hard mask layers. The first tilted etch process and the second tilted etch process use the second hard mask layers as pattern guides and the first hard mask layer is turned into a patterned first hard mask layer by the first openings and the second openings.

Abstract: A computer program product includes a receiving module, a security module and a transmitting module. The receiving module is configured to receive identification data of a user ID from a mobile device at a time with a timestamp parameter t. The security module for storing activity parameter p is configured to identify the identification data. The security module generates a digital signature and a block chain ledger C corresponding to a block chain as a function C=f(ID, t, p). The transmitting module is configured to transmit the digital signature and the block chain ledger C to the mobile device. The mobile device accesses the block chain by using the digital signature and the block chain ledger C to perform a transaction on the block chain.

Abstract: The present application discloses a method for fabricating a semiconductor device using a tilted etch process. The method includes forming an etching stop layer on a substrate, forming a target layer on the etching stop layer, forming a first hard mask layer on the target layer, forming second hard mask layers on the first hard mask layer, performing a first tilted etch process on the first hard mask layer to form first openings along the first hard mask layer and adjacent to first sides of the second hard mask layers, and performing a second tilted etch process on the first hard mask layer to form second openings along the first hard mask layer and adjacent to second sides of the second hard mask layers.

Abstract: The present application discloses a method for fabricating a semiconductor device using a tilted etch process. The method for fabricating the semiconductor device includes providing a target layer, forming a first hard mask layer on the target layer, forming second hard mask layers on the first hard mask layer, performing a first tilted etch process on the first hard mask layer to form first openings along the first hard mask layer and adjacent to first sides of the second hard mask layers, and performing a second tilted etch process on the first hard mask layer to form second openings along the first hard mask layer and adjacent to second sides of the second hard mask layers. The first tilted etch process and the second tilted etch process use the second hard mask layers as pattern guides and the first hard mask layer is turned into a patterned first hard mask layer by the first openings and the second openings.

Abstract: A light-emitting wireless charging structure includes a base, a wireless charging module, a light-emitting element and an upper cover. The wireless charging module is disposed on the base. The light-emitting element is disposed on the base adjacent to the wireless charging module. The upper cover covers the wireless charging module and the light-emitting element. The upper cover has a lower surface facing the wireless charging module and an upper surface opposite to the bottom surface. When the light-emitting element emits light, light coming from the light-emitting element passes through the upper cover and forms a mark on the upper surface to indicate the position of the wireless charging module. When the light-emitting element is turn off or kept in an off state, either the mark that has been formed on the upper surface disappears therefrom or no any mark is ever shown on the top surface.

Abstract: A color calibrator includes a first casing, a second casing and an optical sensor. The first casing has an accommodating recess and a plurality of first positioning members, wherein the first positioning members are arranged along an axial direction of the accommodating recess. The second casing is telescopically disposed in the accommodating recess. The second casing has a second positioning member. One of the first positioning member and the second positioning member is a magnet. Another one of the first positioning member and the second positioning member is a magnet or a magnetic induction material. The second positioning member cooperates with one of the first positioning members to position the second casing at one of a plurality of telescopic positions with respect to the first casing. The optical sensor is disposed on the second casing.

Abstract: A stretchable electronics generating apparatus and layout method thereof are provided. The layout method includes: establishing a layout database, wherein the layout database recodes a plurality of layout selection information respectively corresponding to a plurality of strain/stress information; detecting a layout target area to obtain a strain/stress distribution status of the layout target area; generating a wire routing information according to the strain/stress distribution status based on the layout database; and transporting the wire routing information to a manufacture device of the conductive wires for disposing a plurality of physical conductive wires on the layout target area by the manufacture device.

Abstract: The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a plurality of semiconductor memory dies vertically stacked through a plurality of microbumps; a plurality of through silicon vias positioned in the plurality of semiconductor dies and electrically coupled through the plurality of microbumps; and a plurality of protection liners positioned on sides of the plurality of through silicon vias; wherein the plurality of protection liners are formed of manganese-zinc ferrite, nickel-zinc ferrite, cobalt ferrite, strontium ferrite, barium ferrite, lithium ferrite, lithium-zinc ferrite, single crystal yttrium iron garnet, or gallium substituted single crystal yttrium iron garnet.

Abstract: A semiconductor device includes a buried word line in a substrate and extending along a first direction, a stacked nanowire structure over the buried word line, a first source/drain region and a second source/drain region on opposite sides of the stacked nanowire structure, and a bit line contact and a capacitor contact over the first source/drain region and the second source/drain region, respectively. A method for manufacturing the semiconductor device includes the steps of forming a buried word line extending along a first direction in a substrate, mounting an epitaxy silicon sheet on the substrate and the buried word line, forming a stacked nanowire structure over the buried word line, forming a first source/drain region and a second source/drain region on opposite sides of the stacked nanowire structure, and forming a bit line contact and a capacitor contact over the first source/drain region and the second source/drain region, respectively.

Abstract: A semiconductor device includes a buried word line in a substrate and extending along a first direction, a stacked nanowire structure over the buried word line, a first source/drain region and a second source/drain region on opposite sides of the stacked nanowire structure, and a bit line contact and a capacitor contact over the first source/drain region and the second source/drain region, respectively. A method for manufacturing the semiconductor device includes the steps of forming a buried word line extending along a first direction in a substrate, mounting an epitaxy silicon sheet on the substrate and the buried word line, forming a stacked nanowire structure over the buried word line, forming a first source/drain region and a second source/drain region on opposite sides of the stacked nanowire structure, and forming a bit line contact and a capacitor contact over the first source/drain region and the second source/drain region, respectively.

Abstract: The present disclosure provides a semiconductor device and a method for forming the semiconductor device. The method includes forming a first conductive structure over a substrate, forming a first dielectric structure over the first conductive structure, transforming a sidewall portion of the first conductive structure into a first dielectric portion, removing the first dielectric portion such that a width of the first dielectric structure is greater than a width of a remaining portion of the first conductive structure, and forming an inter-layer dielectric (ILD) layer covering sidewalls of the first dielectric structure such that a first air spacer is formed between the ILD layer and the remaining portion of the first conductive structure.

Abstract: The present disclosure provides a semiconductor device and a method for forming the semiconductor device. The method includes forming a first conductive structure over a substrate, forming a first dielectric structure over the first conductive structure, transforming a sidewall portion of the first conductive structure into a first dielectric portion, removing the first dielectric portion such that a width of the first dielectric structure is greater than a width of a remaining portion of the first conductive structure, and forming an inter-layer dielectric (ILD) layer covering sidewalls of the first dielectric structure such that a first air spacer is formed between the ILD layer and the remaining portion of the first conductive structure.

Abstract: An imaging module includes an imaging unit, a first bracket, a first shaft member and a first fixing member. The imaging unit includes a first circular hole. The first bracket includes a first non-circular hole. The first shaft member includes a first non-circular shaft portion. The first non-circular shaft portion is disposed in the first non-circular hole and the first circular hole, such that the first shaft member is disposed on the first bracket and the imaging unit is rotatably disposed on the first shaft member. The first fixing member is fixed on an end of the first shaft member.

Abstract: A display device includes a display module and a color calibrator. The display module includes a first casing and a circuit board. The first casing has a positioning recess and an accommodating recess. The circuit board has a first electrical connecting portion. The circuit board is disposed corresponding to the positioning recess and the first electrical connecting portion is exposed from the positioning recess. The color calibrator includes a second casing, a second electrical connecting portion and a sensor. The second casing has a protruding portion. The color calibrator is selectively accommodated in the accommodating recess or connected to the positioning recess by the protruding portion. When the protruding portion of the color calibrator is connected to the positioning recess, the first electrical connecting portion is electrically connected to the second electrical connecting portion and the sensor faces a display area of the display module.

Abstract: An imaging module includes an imaging unit, a first bracket, a first shaft member and a first fixing member. The imaging unit includes a first circular hole. The first bracket includes a first non-circular hole. The first shaft member includes a first non-circular shaft portion. The first non-circular shaft portion is disposed in the first non-circular hole and the first circular hole, such that the first shaft member is disposed on the first bracket and the imaging unit is rotatably disposed on the first shaft member. The first fixing member is fixed on an end of the first shaft member.

Abstract: A display device including a casing, a frame member, a plate member and a display panel is provided. The frame member includes a frame body and a protruding column disposed on the frame body and protruded in a direction from the frame body towards the casing. The plate member is disposed on the frame body and has an opening, which allows the protruding column to pass through, wherein the protruding column fixes relative position between the frame body and the plate member. The display panel is disposed on the frame body.

Abstract: A multifunctional laser processing apparatus includes a hollow milling shaft, a light path tool holder, a tool-holder-type melting module, a laser light source, and a temperature sensor. The hollow milling shaft includes a first light path channel and a connection portion. The light path tool holder can be connected to the connection portion. The light path tool holder has a second light path channel communicating with the first light path channel. The tool-holder-type melting module can be connected to the connection portion. The tool-holder-type melting module has a third light path channel communicating with the first light path channel. The laser light source is configured to emit a laser light beam toward the first light path channel. The temperature sensor is disposed on an outer surface of the hollow milling shaft and is configured to sense a temperature of a work piece during a multifunctional processing process.

Abstract: A light-emitting wireless charging structure includes a base, a wireless charging module, a light-emitting element and an upper cover. The wireless charging module is disposed on the base. The light-emitting element is disposed on the base adjacent to the wireless charging module. The upper cover covers the wireless charging module and the light-emitting element. The upper cover has a lower surface facing the wireless charging module and an upper surface opposite to the bottom surface. When the light-emitting element emits light, light coming from the light-emitting element passes through the upper cover and forms a mark on the upper surface to indicate the position of the wireless charging module. When the light-emitting element is turn off or kept in an off state, either the mark that has been formed on the upper surface disappears therefrom or no any mark is ever shown on the top surface.

Abstract: A stress measuring device and a stress measuring method for measuring a stress distribution of an object are provided. The stress measuring method includes: receiving a first-dimension image of the object; marking an area of the first-dimension image to generate a marked area; calculating a first stress applied to the marked area and transforming the marked area to a strained marked area corresponding to a second-dimension image to generate a determination result; and calculating the stress distribution corresponding to the first-dimension image of the object according to the determination result.

Abstract: A stretchable electronics generating apparatus and layout method thereof are provided. The layout method includes: establishing a layout database, wherein the layout database recodes a plurality of layout selection information respectively corresponding to a plurality of strain/stress information; detecting a layout target area to obtain a strain/stress distribution status of the layout target area; generating a wire routing information according to the strain/stress distribution status based on the layout database; and transporting the wire routing information to a manufacture device of the conductive wires for disposing a plurality of physical conductive wires on the layout target area by the manufacture device.