Abstract: An electronic device including: (a) a semiconductor layer including crystalline zinc oxide; and (b) an electrode including a suitable amount of zinc, indium, or a mixture thereof.

Abstract: A composition comprising a liquid and a plurality of silver-containing nanoparticles with a stabilizer, wherein the silver-containing nanoparticles are a product of a reaction of a silver compound with a reducing agent comprising a hydrazine compound in the presence of a thermally removable stabilizer in a reaction mixture comprising the silver compound, the reducing agent, the stabilizer, and an organic solvent wherein the hydrazine compound is a hydrocarbyl hydrazine, a hydrocarbyl hydrazine salt, a hydrazide, a carbazate, a sulfonohydrazide, or a mixture thereof and wherein the stabilizer includes an organoamine.

Abstract: A process for fabricating at least one semiconductor layer of a thin film transistor composed of: liquid depositing one or more zinc oxide-precursor compositions and forming the at least one semiconductor layer of the thin film transistor including crystalline zinc oxide preferentially oriented with the c-axis perpendicular to the plane of the at least one semiconductor layer from the liquid deposited one or more zinc oxide-precursor compositions.

Abstract: A method is disclosed for making a metal electrode which minimizes the contact resistance between it and an organic semiconductor. Acid-stabilized metal nanoparticles are deposited upon a substrate and annealed. This creates a metal electrode and releases acid. Upon deposition of semiconductor and subsequent annealing, the acid diffuses from the electrode into the semiconductor layer and acts as a dopant, minimizing the contact resistance. The use of oleic acid-stabilized silver nanoparticles is demonstrated.

Abstract: A polymer of the formula/structure wherein R represents alkyl, alkoxy, aryl, or heteroaryl; each R1 and R2 is independently hydrogen (H), a suitable hydrocarbon; a heteroatom containing group or a halogen; R3 and R4 are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR? wherein R? is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.

Abstract: An electronic device comprising a semiconductive material containing a polyacene of Formula (I) wherein R is a suitable hydrocarbon, a halogen, or a heteroatom containing group; each R? and R? are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y each represent the number of groups; a and b each independently represent the number of groups; and n represents the number of repeating units.

Abstract: A polymer of the following formula wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.

Abstract: An electronic device, such as a thin film transistor containing a semiconductor of, for example, of the Formula (I) wherein R represents alkyl, alkoxy, aryl, heteroaryl or a suitable hydrocarbon; each R1 and R2 is independently hydrogen (H), a suitable hydrocarbon; a heteroatom containing group or a halogen; R3 and R4 are independently a suitable hydrocarbon, a heteroatom containing group, or a halogen; x and y represent the number of groups; Z represents sulfur, oxygen, selenium, or NR? wherein R? is hydrogen, alkyl, or aryl; and n and m represent the number of repeating units.

Abstract: An electronic device like a thin film transistor containing an arylamine polymer of the formula wherein Ar is aryl or heteroaryl; X represents CH2, sulfur, oxygen, selenium, NR?, or SiR?2 wherein R? and R? are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of repeating units.

Abstract: An electronic device comprising a polymer of Formula (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar and Ar? represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.

Abstract: A polymer of the following formula wherein Ar is aryl or heteroaryl; X represents CH2, sulfur, oxygen, selenium, NR?, or SiR?2 wherein R? and R? are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of the repeating units.

Abstract: An electronic device comprising a polymer of Formula or structure (I) wherein R1 is hydrogen, halogen, a suitable hydrocarbon, or a heteroatom containing group; R2 is hydrogen, a suitable hydrocarbon, a heteroatom containing group, or a halogen; R3 and R4 are independently a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar is an aromatic component; x, y, a, b, and c represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR wherein R is hydrogen, alkyl, or aryl; and n represents the number of repeating units.

Abstract: An electronic device comprising a semiconductive material of Formula wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.

Abstract: A polymer of Formula or structure (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteratom containing group, or a halogen; Ar and Ar? represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.

Abstract: An electronic device comprising a semiconductive material of Formula or structure (I) wherein each R1, R2, R3 and R4 are independently hydrogen (H), a heteroatom containing group, a suitable hydrocarbon, or a halogen; Ar and Ar? each independently represents an aromatic moiety; x, y, a, b, c, d, e, f and g represent the number of groups or rings, respectively; Z represents sulfur, oxygen, selenium, or NR?? wherein R?? is hydrogen, alkyl, or aryl; and n represents the number of repeating units.

Abstract: A process comprising: reacting a silver compound with a reducing agent comprising a hydrazine compound in the presence of a thermally removable stabilizer in a reaction mixture comprising the silver compound, the reducing agent, the stabilizer, and an optional solvent, to form a plurality of silver-containing nanoparticles with molecules of the stabilizer on the surface of the silver-containing nanoparticles.

Abstract: An organic thin-film transistor has a p-type semiconducting layer, wherein the semiconducting layer comprises a crystalline conjugated polyarylamine of the chemical structure: wherein R1 through R5 are independently selected from hydrogen, alkyl having from about 1 to about 30 carbon atoms, aryl having from about 6 to about 40 carbon atoms, heteroaryl having from about 3 to about 40 atoms, alkoxy having from about 1 to about 30 carbon atoms, aryloxy having from about 6 to about 40 carbon atoms, and substituted derivatives thereof; wherein A and B are the same or different independently selected from arylenes having from about 6 to about 20 carbon atoms or heteroarylenes having from about 3 to about 20 carbon atoms; and wherein n is the degree of polymerization; and wherein the polyarylamine has a mobility (?0) of 10?4 cm2/V·sec or greater.

Abstract: A process for fabricating an electronic device including: (a) forming a liquid composition using starting ingredients comprising an organic semiconductor and a stabilizer, wherein the stabilizer comprises a strong electron donor compound or a strong electron acceptor compound, wherein the organic semiconductor exhibits a high oxygen sensitivity in a comparison solution without the stabilizer but a lower oxygen sensitivity in the liquid composition; (b) liquid depositing the liquid composition; and (c) drying the liquid composition to form a layer of the electronic device, wherein the layer comprises the organic semiconductor.

Abstract: A polymer comprising one or more types of repeat units, wherein the polymer includes a substituted thieno[3,2-b]thiophene component A and a different component B in the same type of repeat unit or in different types of repeat units, and wherein the polymer excludes a substituted or unsubstituted thieno[2,3-b]thiophene moiety. The polymer can be used as a semiconductor in electronics such as in organic thin film transistors.

Abstract: A compound including at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.