Abstract: An electronic device comprises a semiconducting polymer selected from the group consisting of Formulas (I) and (II): where X, Y, a, b, n, R1, and R2 are as defined herein. The electronic device may be a thin film transistor.

Abstract: A semiconducting polymer of Formula (I): wherein X is independently selected from S, Se, O, and NR, wherein R is independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, and —CN; Ar is independently a conjugated divalent moiety; a is an integer from 1 to about 10; and n is an integer from 2 to about 5,000. The resulting semiconducting polymer is suitable for use in organic thin film transistors.

Abstract: Processes for producing silver nanoparticles are disclosed. A reaction mixture comprising a silver compound, a carboxylic acid, an amine compound, and an optional solvent is optionally heated. A hydrazine compound is then added and the mixture is further reacted to produce the silver nanoparticles.

Abstract: Processes for producing carboxylic acid-stabilized silver nanoparticles are disclosed. A reaction mixture comprising a silver salt, a carboxylic acid, and a tertiary amine is heated to form carboxylic acid-stabilized silver nanoparticles.

Abstract: An electronic device fabrication method including: (a) providing a dielectric region and a lower electrically conductive region, wherein the dielectric region includes a plurality of pinholes each with an entry and an exit; and (b) depositing an etchant for the lower electrically conductive region into the pinholes that undercuts the pinholes to create for a number of the pinholes an overhanging surface of the dielectric region around the exit facing an undercut area of the lower electrically conductive region wider than the exit.

Abstract: A semiconducting polymer is selected from the group consisting of Formulas (I) and (II): where X, Y, a, b, n, R1, and R2 are as defined herein.

Abstract: An electronic device comprises a semiconducting polymer of Formula (I): wherein X is independently selected from S, Se, O, and NR, wherein R is independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, and —CN; Ar is independently a conjugated divalent moiety; a is an integer from 1 to about 10; and n is an integer from 2 to about 5,000. The electronic device may be an organic thin film transistor.

Abstract: The presently disclosed embodiments are directed to an improved metallization process for making fuser members which avoids the extra steps of metal nanoparticle seeding or special substrate treatment. In embodiments, a metallized substrate, formed by dip-coating or spraying with a metal nanoparticle dispersion which is subsequently thermally annealed, is used for the complete fabrication of the fuser member.

Abstract: A process comprising: (a) preparing a reaction mixture comprising a silver salt, the reducing agent comprising a hydrazine compound, a thermally removable stabilizer, and an optional solvent, to form a plurality of silver-containing nanoparticles with molecules of the stabilizer on the surface of the silver-containing nanoparticles, wherein the reaction mixture generates an acid; and (b) removing the acid to produce the silver-containing nanoparticles substantially free of acid.

Abstract: The invention disclosed relates to cross-linkable composites of boronic acid or a boronic acid derivative such as a boronate, and an organic or organo-metallic moiety having a functionality such as hole transporting, electron transporting and light emitting, to cross-linked composites and to methods for making same. Multi-layer materials and optoelectronic devices including such cross-linked composites are also disclosed.

Abstract: A process for fabricating an electronic device including: (a) forming a liquid composition using starting ingredients comprising an organic semiconductor and a stabilizer, wherein the stabilizer comprises a strong electron donor compound or a strong electron acceptor compound, wherein the organic semiconductor exhibits a high oxygen sensitivity in a comparison solution without the stabilizer but a lower oxygen sensitivity in the liquid composition; (b) liquid depositing the liquid composition; and (c) drying the liquid composition to form a layer of the electronic device, wherein the layer comprises the organic semiconductor.

Abstract: A bimodal metal nanoparticle composition includes first metal nanoparticles having an average diameter of from about 50 nm to about 1000 nm, and second stabilized metal nanoparticles having an average diameter of from about 0.5 nm to about 20 nm, the second stabilized metal nanoparticles including metal cores having a stabilizer attached to the surfaces thereof, wherein the stabilizer is a substituted dithiocarbonate.

Abstract: An electronic device like a thin film transistor containing an arylamine polymer of the formula wherein Ar is aryl or heteroaryl; X represents CH2, sulfur, oxygen, selenium, NR?, or SiR?2 wherein R? and R? are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of repeating units.

Abstract: A thin film transistor comprising: (a) an insulating layer; (b) a gate electrode; (c) a semiconductor layer; (d) a source electrode; and (e) a drain electrode, wherein the insulating layer, the gate electrode, the semiconductor layer, the source electrode, and the drain electrode are in any sequence as long as the gate electrode and the semiconductor layer both contact the insulating layer, and the source electrode and the drain electrode both contact the semiconductor layer, and wherein at least one of the source electrode, the drain electrode, and the gate electrode comprise coalesced coinage metal containing nanoparticles and a residual amount of one or both of a stabilizer covalently bonded to the coalesced coinage metal containing nanoparticles and a decomposed stabilizer covalently bonded to the coalesced coinage metal containing nanoparticles.

Abstract: A thin film transistor having a semiconducting layer with improved flexibility and/or mobility is disclosed. The semiconducting layer comprises a semiconducting polymer and insulating polymer. Methods for forming and using such thin-film transistors are also disclosed.

Abstract: Organic thin film transistors with improved mobility are disclosed. The semiconducting layer comprises a semiconductor material of Formula (I): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, and substituted aryl; and R3 and R4 are independently selected from hydrogen, alkyl, substituted alkyl, aryl, and substituted aryl. A silanized interfacial layer is also present which has alkyl sidechains extending from its surface towards the semiconducting layer.

Abstract: In accordance with the invention, there are polymers (II) having the formula: wherein R and R? are substituents comprising about 8 to about 16 carbon atoms and n represents the number of repeat unit from about 5 to about 5000; and electronic devices, such as, for example, thin film transistors including the polymer (II).

Abstract: An electronic device comprising a polymer of Formula (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteroatom containing group, or a halogen; Ar and Ar? represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.

Abstract: A metal nanoparticle composition includes a bident amine stabilizer associated with an external surface of the metal nanoparticle. A method of forming conductive features on a substrate, providing a solution of dispersed bident amine-stabilized metal nanoparticles, depositing the bident amine-stabilized metal nanoparticle dispersion onto a substrate, and heating the printed substrate to form conductive features on the surface of the substrate.

Abstract: A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(4-vinylphenol-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.