Patents by Inventor Yuning Li

Yuning Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Linked arylamine polymers
    Patent number: 7847052
    Abstract: A polymer of the following formula wherein Ar is aryl or heteroaryl; X represents CH2, sulfur, oxygen, selenium, NR?, or SiR?2 wherein R? and R? are each a suitable hydrocarbon; m represents the number of X substituents; and n represents the number of the repeating units.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: December 7, 2010
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu, Ping Liu
  • Polythiophenes and electronic devices comprising the same
    Patent number: 7837903
    Abstract: Disclosed are semiconducting polythiophenes comprising a repeating unit of Formula (A) or a copolythiophene of Formula (B): wherein A and B are each alkyl having from 1 to about 25 carbon atoms; and a, b, c, d, e, f, g, x, and y are as defined herein. These polythiophenes have high mobility and are soluble in common organic solvents, so that chlorinated solvents do not need to be used. They are useful for depositing semiconducting layers, particularly in organic thin-film transistors.
    Type: Grant
    Filed: December 10, 2008
    Date of Patent: November 23, 2010
    Assignee: Xerox Corporation
    Inventors: Ping Liu, Yiliang Wu, Yuning Li
  • Electronic devices
    Patent number: 7834132
    Abstract: An electronic device, such as a thin film transistor containing a semiconductor of Formula/Structure wherein R, R? and R? are, for example, independently hydrogen, a suitable hydrocarbon, a suitable hetero-containing group, a halogen, or mixtures thereof; and n represents the number of repeating units.
    Type: Grant
    Filed: October 25, 2006
    Date of Patent: November 16, 2010
    Assignee: Xerox Corporation
    Inventors: Beng S. Ong, Hualong Pan, Yuning Li, Yiliang Wu, Ping Liu
  • Device containing compound having indolocarbazole moiety and divalent linkage
    Patent number: 7829727
    Abstract: An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
    Type: Grant
    Filed: November 16, 2005
    Date of Patent: November 9, 2010
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu, Ping Liu
  • Poly(dithienylbenzo[1,2-b:4,5-b?]dithiophene) polymers
    Patent number: 7820782
    Abstract: A polymer of the formula/structure wherein R, R?, and R? are, for example, a suitable hydrocarbon, a halogen (halide) a hetero-containing group, or mixtures thereof; and n represents the number of repeating groups.
    Type: Grant
    Filed: October 25, 2006
    Date of Patent: October 26, 2010
    Assignee: Xerox Corporation
    Inventors: Beng S. Ong, Hualong Pan, Yuning Li, Yiliang Wu, Ping Liu
  • Device and process involving pinhole undercut area
    Patent number: 7821068
    Abstract: An electronic device fabrication method including: (a) providing a dielectric region and a lower electrically conductive region, wherein the dielectric region includes a plurality of pinholes each with an entry and an exit; and (b) depositing an etchant for the lower electrically conductive region into the pinholes that undercuts the pinholes to create for a number of the pinholes an overhanging surface of the dielectric region around the exit facing an undercut area of the lower electrically conductive region wider than the exit.
    Type: Grant
    Filed: August 18, 2008
    Date of Patent: October 26, 2010
    Assignee: Xerox Corporation
    Inventors: Yiliang Wu, Ping Liu, Yuning Li, Hualong Pan
  • DEVICE CONTAINING COMPOUND HAVING INDOLOCARBAZOLE MOIETY AND DIVALENT LINKAGE
    Publication number: 20100230670
    Abstract: An electronic device including a compound comprising at least one type of an optionally substituted indolocarbazole moiety and at least one divalent linkage.
    Type: Application
    Filed: June 2, 2010
    Publication date: September 16, 2010
    Applicant: XEROX CORPORATION
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu, Ping Liu
  • Ethynylene acene polymers
    Patent number: 7795373
    Abstract: A polymer of Formula or structure (I) wherein at least one of R1 and R2 is a suitable hydrocarbon, hydrogen, a heteratom containing group, or a halogen; Ar and Ar? represent an aromatic moiety; x, y, a, b, c, d, e, f, and g represent the number of groups or rings, respectively; and n represents the number of repeating units.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: September 14, 2010
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong, Yiliang Wu
  • Silver nanoparticle compositions
    Patent number: 7737497
    Abstract: A silver nanoparticle composition is formed by the process comprising: providing a solution of silver-containing nanoparticles and an initial stabilizer on the surface of the silver-containing nanoparticles; and mixing the solution with a carboxylic acid so as to replace at least a portion of the initial stabilizer with the carboxylic acid, resulting in a composition comprising the silver-containing nanoparticles and the carboxylic acid on the surface of the silver-containing nanoparticles. Methods of using the silver nanoparticle composition and devices comprising the silver nanoparticle composition are also disclosed.
    Type: Grant
    Filed: November 29, 2007
    Date of Patent: June 15, 2010
    Assignee: Xerox Corporation
    Inventor: Yuning Li
  • POLYTHIOPHENES AND ELECTRONIC DEVICES COMPRISING THE SAME
    Publication number: 20100140555
    Abstract: Disclosed are semiconducting polythiophenes comprising a repeating unit of Formula (A) or a copolythiophene of Formula (B): wherein A and B are each alkyl having from 1 to about 25 carbon atoms; and a, b, c, d, e, f, g, x, and y are as defined herein. These polythiophenes have high mobility and are soluble in common organic solvents, so that chlorinated solvents do not need to be used. They are useful for depositing semiconducting layers, particularly in organic thin-film transistors.
    Type: Application
    Filed: December 10, 2008
    Publication date: June 10, 2010
    Applicant: XEROX CORPORATION
    Inventors: Ping Liu, Yiliang Wu, Yuning Li
  • ORGANIC THIN-FILM TRANSISTORS
    Publication number: 20100140593
    Abstract: A thin-film transistor has a semiconducting layer which comprises a halogen-coordinated metal phthalocyanine complex of Formula (I) or Formula (II): wherein M is a trivalent metal atom; each m represents the number of R substituents on the phenyl or naphthyl ring, and is independently an integer from 0 to 6; each R is independently selected from the group consisting of halogen, alkyl, substituted alkyl, alkoxy, substituted alkoxy, phenoxy, phenylthio, aryl, substituted aryl, heteroaryl, —CN, and —NO2; and X is a halogen atom.
    Type: Application
    Filed: December 10, 2008
    Publication date: June 10, 2010
    Applicant: XEROX CORPORATION
    Inventors: Yiliang Wu, Ah-Mee Hor, Yuning Li, Ping Liu, Paul F. Smith
  • ORGANIC THIN-FILM TRANSISTORS
    Publication number: 20100123123
    Abstract: A thin-film transistor comprises a semiconducting layer comprising a semiconducting material selected from Formula (I) or (II): wherein X, R1, R2, R3, R4, R5 a, b, and n are as described herein. Semiconducting compositions of Formula (I) or (II) are also described.
    Type: Application
    Filed: November 19, 2008
    Publication date: May 20, 2010
    Applicant: Xerox Corporation
    Inventors: Yuning Li, Yiliang Wu, Ping Liu, Paul F. Smith
  • ORGANIC THIN-FILM TRANSISTORS
    Publication number: 20100123124
    Abstract: A thin-film transistor uses a semiconducting layer comprising a semiconducting material of (A): where X, Ar, Ar?, R1, R2, R3, R4, R5, a, b, m, and n are as defined herein. The transistor has improved performance.
    Type: Application
    Filed: November 19, 2008
    Publication date: May 20, 2010
    Applicant: Xerox Corporation
    Inventors: Yuning Li, Ping Liu, Yiliang Wu, Paul F. Smith
  • Polythiophene electronic devices
    Patent number: 7718999
    Abstract: An electronic device with a semiconductor layer of (I) wherein X is O or NR?; m represents the number of methylenes; M is a conjugated moiety; R and R? are selected from the group consisting of at least one of hydrogen, a suitable hydrocarbon, and a suitable hetero-containing group; a represents the number of 3-substituted thiophene units; b represents the number of conjugated moieties, and n represents the number of polymer repeating units.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: May 18, 2010
    Assignee: Xerox Corporation
    Inventors: Yuning Li, Beng S. Ong
  • Thiophene electronic devices
    Patent number: 7718998
    Abstract: An electronic device, such as a thin film transistor, containing a semiconductor of Formula/Structure (I) wherein each R? is independently at least one of hydrogen, and a suitable hydrocarbon; Ar is an aryl, inclusive of heteroaryl substituents; and M represents at least one thiophene based conjugated segment.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: May 18, 2010
    Assignee: Xerox Corporation
    Inventors: Ping Liu, Beng S. Ong, Yiliang Wu, Yuning Li, Hualong Pan
  • PURIFICATION PROCESS FOR SEMICONDUCTING MONOMERS
    Publication number: 20100121004
    Abstract: Disclosed is a process for purifying monomers of Formula (II): wherein R1 and R2 are independently selected from alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen; and R? is selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, alkoxy, substituted alkoxy, and halogen. After the monomer is synthesized, it is purified by column chromatography using neutral alumina and hexane as an eluent. The resulting product can also be further recrystallized using isopropanol, hexane, heptane, or toluene. Polymers formed from the purified monomer exhibit higher mobility and increased reproducibility of the mobility.
    Type: Application
    Filed: November 13, 2008
    Publication date: May 13, 2010
    Applicant: XEROX CORPORATION
    Inventors: Yuning Li, Ping Liu, Yiliang Wu
  • Poly(alkynylthiophene)s
    Patent number: 7705111
    Abstract: A polymer of the following formula wherein R is a suitable hydrocarbon or a heteroatom containing group; and n represents the number of repeating units.
    Type: Grant
    Filed: April 6, 2006
    Date of Patent: April 27, 2010
    Assignee: Xerox Corporation
    Inventors: Beng S. Ong, Yuning Li, Yiliang Wu
  • ORGANIC THIN FILM TRANSISTORS
    Publication number: 20100090200
    Abstract: Organic thin film transistors with improved mobility are disclosed. The transistor contains two interfacial layers between the dielectric layer and the semiconducting layer. One interfacial layer is formed from a siloxane polymer or silsesquioxane polymer. The other interfacial layer is formed from an alkyl-containing silane of Formula (1): where R? is alkyl having from about 1 to about 24 carbon atoms; R? is alkyl having from about 1 to about 24 carbon atoms, halogen, alkoxy, hydroxyl, or amino; L is halogen, oxygen, alkoxy, hydroxyl, or amino; k is 1 or 2; and m is 1 or 2.
    Type: Application
    Filed: October 14, 2008
    Publication date: April 15, 2010
    Applicant: XEROX CORPORATION
    Inventors: Yiliang Wu, Ping Liu, Yuning Li, Paul F. Smith
  • ORGANIC THIN FILM TRANSISTORS
    Publication number: 20100090201
    Abstract: A thin film transistor having an improved gate dielectric layer is disclosed. The gate dielectric layer comprises a poly(hydroxyalkyl acrylate-co-acrylonitrile) based polymer. The resulting gate dielectric layer has a high dielectric constant and can be crosslinked. Higher gate dielectric layer thicknesses can be used to prevent current leakage while still having a large capacitance for low operating voltages. Methods for producing such gate dielectric layers and/or thin film transistors comprising the same are also disclosed.
    Type: Application
    Filed: October 14, 2008
    Publication date: April 15, 2010
    Applicant: XEROX CORPORATION
    Inventors: Ping Liu, Yiliang Wu, Yuning Li, Paul F. Smith
  • SEMICONDUCTING POLYMERS
    Publication number: 20100041861
    Abstract: A semiconducting polymer of Formula (I): wherein X is independently selected from S, Se, O, and NR, wherein R is independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, and —CN; Ar is independently a conjugated divalent moiety; a is an integer from 1 to about 10; and n is an integer from 2 to about 5,000. The resulting semiconducting polymer is suitable for use in organic thin film transistors.
    Type: Application
    Filed: August 18, 2008
    Publication date: February 18, 2010
    Applicant: Xerox Corporation
    Inventor: Yuning Li