Patents by Inventor Yuri V. Melnik
Yuri V. Melnik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8372199Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: GrantFiled: June 19, 2008Date of Patent: February 12, 2013Assignee: Freiberger Compound Materials GmbHInventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Publication number: 20120076968Abstract: Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.Type: ApplicationFiled: December 1, 2011Publication date: March 29, 2012Applicant: FREIBERGER COMPOUND MATERIALS GMBHInventors: Vladimir A. Dmitriev, Yuri V. Melnik
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Patent number: 8092596Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: GrantFiled: June 13, 2008Date of Patent: January 10, 2012Assignee: Freiberger Compound Materials GmbHInventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A Dmitriev
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Patent number: 8092597Abstract: Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.Type: GrantFiled: January 22, 2011Date of Patent: January 10, 2012Assignee: Freiberger Compound Materials GmbHInventors: Vladimir A. Dmitriev, Yuri V. Melnik
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Publication number: 20110114015Abstract: Method for producing a III-N (AlN, GaN, AlxGa(1-x)N) crystal by Vapor Phase Epitaxy (VPE), the method comprising: providing a reactor having: a growth zone for growing a III-N crystal; a substrate holder located in the growth zone that supports at least one substrate on which to grow the III-N crystal; a gas supply system that delivers growth material for growing the III-N crystal to the growth zone from an outlet of the gas supply system; and a heating element that controls temperature in the reactor; determining three growth sub-zones in the growth zone for which a crystal grown in the growth sub-zones has respectively a concave, flat or convex curvature; growing the III-N crystal on a substrate in a growth region for which the crystal has a by desired curvature.Type: ApplicationFiled: January 22, 2011Publication date: May 19, 2011Applicant: FREIBERGER COMPOUND MATERIALS GMBHInventors: Vladimir A. Dmitriev, Yuri V. Melnik
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Patent number: 7611586Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: October 8, 2007Date of Patent: November 3, 2009Assignee: Technologies and Devices International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Kaite Tsvetkov, Vladimir A. Dmitriev
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Patent number: 7556688Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: May 20, 2005Date of Patent: July 7, 2009Assignee: Freiberger Compound Materials GmbHInventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Publication number: 20090148984Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: ApplicationFiled: June 13, 2008Publication date: June 11, 2009Inventors: Yuri V. MELNIK, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Publication number: 20090092815Abstract: A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).Type: ApplicationFiled: September 22, 2008Publication date: April 9, 2009Applicant: TECHNOLOGIES AND DEVICES INTERNATIONAL, INC.Inventors: Vladimir A. Dmitriev, Yuri V. Melnik
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Patent number: 7501023Abstract: A method and apparatus for growing low defect, optically transparent, colorless, crack-free, substantially flat, single crystal Group III nitride epitaxial layers with a thickness of at least 10 microns is provided. These layers can be grown on large area substrates comprised of Si, SiC, sapphire, GaN, AlN, GaAs, AlGaN and others. In one aspect, the crack-free Group III nitride layers are grown using a modified HVPE technique. If desired, the shape and the stress of Group III nitride layers can be controlled, thus allowing concave, convex and flat layers to be controllably grown. After the growth of the Group III nitride layer is complete, the substrate can be removed and the freestanding Group III nitride layer used as a seed for the growth of a boule of Group III nitride material. The boule can be sliced into individual wafers for use in the fabrication of a variety of semiconductor structures (e.g., HEMTs, LEDs, etc.).Type: GrantFiled: February 13, 2004Date of Patent: March 10, 2009Assignee: Technologies and Devices, International, Inc.Inventors: Vladimir A. Dmitriev, Yuri V. Melnik
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Publication number: 20080257256Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: ApplicationFiled: June 19, 2008Publication date: October 23, 2008Inventors: Yuri V. MELNIK, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 7279047Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: August 1, 2003Date of Patent: October 9, 2007Assignee: Technologies and Devices, International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 6955719Abstract: A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.Type: GrantFiled: July 18, 2003Date of Patent: October 18, 2005Assignee: Technologies and Devices, Inc.Inventors: Vladimir A. Dmitriev, Denis V. Tsvetkov, Aleksei Pechnikov, Yuri V. Melnik, Aleksandr Usikov, Oleg Kovalenkov
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Patent number: 6936357Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: GrantFiled: January 31, 2003Date of Patent: August 30, 2005Assignee: Technologies and Devices International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 6849862Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: GrantFiled: May 18, 2001Date of Patent: February 1, 2005Assignee: Technologies and Devices International, Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20040137657Abstract: A method for fabricating semiconductor devices with thin (e.g., submicron) and/or thick (e.g., between 1 micron and 100 microns thick) Group III nitride layers during a single epitaxial run is provided, the layers exhibiting sharp layer-to-layer interfaces. According to one aspect, an HVPE reactor is provided that includes one or more gas inlet tubes adjacent to the growth zone, thus allowing fine control of the delivery of reactive gases to the substrate surface. According to another aspect, an HVPE reactor is provided that includes at least one growth zone as well as a growth interruption zone. According to another aspect, an HVPE reactor is provided that includes extended growth sources such as slow growth rate gallium source with a reduced gallium surface area. According to another aspect, an HVPE reactor is provided that includes multiple sources of the same material, for example Mg, which can be used sequentially to prolong a growth cycle.Type: ApplicationFiled: July 18, 2003Publication date: July 15, 2004Inventors: Vladimir A. Dmitriev, Denis V. Tsvetkov, A. Pechnikov, Yuri V. Melnik, A. Usikov, O. Kovalenkov
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Publication number: 20040026704Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis.Type: ApplicationFiled: May 18, 2001Publication date: February 12, 2004Applicant: Technologies & Devices Int.'s Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20030226496Abstract: Bulk GaN and AlGaN single crystal boules, preferably fabricated using a modified HVPE process, are provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth, for example to achieve n-, i-, or p-type conductivity.Type: ApplicationFiled: January 31, 2003Publication date: December 11, 2003Applicant: Technologies and Devices International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Publication number: 20030221619Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: ApplicationFiled: July 11, 2001Publication date: December 4, 2003Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 6656285Abstract: An apparatus for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: July 11, 2001Date of Patent: December 2, 2003Assignee: Technologies and Devices International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev