Patents by Inventor Yuri V. Melnik

Yuri V. Melnik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for producing III-V nitride pn junctions and p-i-n junctions
    Patent number: 6218269
    Abstract: A process is disclosed for producing pn junctions and p-i-n junctions from group III nitride compound semiconductor materials. The process comprises growing of pn junctions and p-i-n junctions by hydride vapor phase epitaxy employing hydride of nitrogen (ammonia, hydrozine) as a source of nitrogen and halides of group III metal as a source of metal. Mg is used as acceptor impurity to form p-type III-V nitride layers. The preferred sources for Ga and Al are Ga and Al metals, respectively. The process is carried out in the temperature range from 900 to 1200° C.
    Type: Grant
    Filed: November 18, 1998
    Date of Patent: April 17, 2001
    Assignee: Technology and Devices International, Inc.
    Inventors: Andrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev