Patents by Inventor Yuri V. Melnik
Yuri V. Melnik has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20030205193Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: ApplicationFiled: July 11, 2001Publication date: November 6, 2003Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 6616757Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: July 11, 2001Date of Patent: September 9, 2003Assignee: Technologies and Devices International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 6613143Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: July 6, 2001Date of Patent: September 2, 2003Assignee: Technologies and Devices International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 6599133Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis.Type: GrantFiled: May 18, 2001Date of Patent: July 29, 2003Assignee: Technologies and Devices International, Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Patent number: 6576054Abstract: A method for growing bulk GaN and AlGaN single crystal boules, preferably using a modified HVPE process, is provided. The single crystal boules typically have a volume in excess of 4 cubic centimeters with a minimum dimension of approximately 1 centimeter. If desired, the bulk material can be doped during growth to achieve n-, i-, or p-type conductivity. In order to have growth cycles of sufficient duration, preferably an extended Ga source is used in which a portion of the Ga source is maintained at a relatively high temperature while most of the Ga source is maintained at a temperature close to, and just above, the melting temperature of Ga. To grow large boules of AlGaN, preferably multiple Al sources are used, the Al sources being sequentially activated to avoid Al source depletion and excessive degradation.Type: GrantFiled: July 9, 2001Date of Patent: June 10, 2003Assignee: Technologies and Devices International, Inc.Inventors: Yuri V. Melnik, Vitali Soukhoveev, Vladimir Ivantsov, Katie Tsvetkov, Vladimir A. Dmitriev
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Patent number: 6559038Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis.Type: GrantFiled: May 18, 2001Date of Patent: May 6, 2003Assignee: Technologies and Devices International, Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Patent number: 6559467Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: GrantFiled: May 17, 2001Date of Patent: May 6, 2003Assignee: Technologies and Devices International, Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Patent number: 6555452Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: GrantFiled: May 17, 2001Date of Patent: April 29, 2003Assignee: Technologies and Devices International, Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Patent number: 6479839Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis.Type: GrantFiled: May 18, 2001Date of Patent: November 12, 2002Assignee: Technologies & Devices International, Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Patent number: 6476420Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis.Type: GrantFiled: May 17, 2001Date of Patent: November 5, 2002Assignee: Technologies and Devices International, Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Patent number: 6472300Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis.Type: GrantFiled: May 18, 2001Date of Patent: October 29, 2002Assignee: Technologies and Devices International, Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020053679Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: ApplicationFiled: May 17, 2001Publication date: May 9, 2002Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020047127Abstract: A method for fabricating p-type, i-type, and n-type mn-v compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: ApplicationFiled: May 17, 2001Publication date: April 25, 2002Applicant: Technologies & Devices Int.'s Inc.Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020047135Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: ApplicationFiled: May 17, 2001Publication date: April 25, 2002Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020039806Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a noncontinuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaASb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: ApplicationFiled: May 18, 2001Publication date: April 4, 2002Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020030192Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: ApplicationFiled: May 18, 2001Publication date: March 14, 2002Applicant: Technologies & DevicesInventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020028565Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: ApplicationFiled: May 17, 2001Publication date: March 7, 2002Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020025661Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis.Type: ApplicationFiled: May 18, 2001Publication date: February 28, 2002Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020022286Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis.Type: ApplicationFiled: May 18, 2001Publication date: February 21, 2002Inventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev
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Publication number: 20020017650Abstract: A method for fabricating p-type, i-type, and n-type III-V compound materials using HVPE techniques is provided. If desired, these materials can be grown directly onto the surface of a substrate without the inclusion of a low temperature buffer layer. By growing multiple layers of differing conductivity, a variety of different device structures can be fabricated including simple p-n homojunction and heterojunction structures as well as more complex structures in which the p-n junction, either homojunction or heterojunction, is interposed between a pair of wide band gap material layers. The provided method can also be used to fabricate a device in which a non-continuous quantum dot layer is grown within the p-n junction. The quantum dot layer is comprised of a plurality of quantum dot regions, each of which is typically between approximately 20 and 30 Angstroms per axis. The quantum dot layer is preferably comprised of AlxByInzGa1-x-y-zN, InGaN1-a-bPaAsb, or AlxByInzGa1-x-y-zN1-a-bPaAsb.Type: ApplicationFiled: May 18, 2001Publication date: February 14, 2002Applicant: Technologies & DevicesInventors: Audrey E. Nikolaev, Yuri V. Melnik, Konstantin V. Vassilevski, Vladimir A. Dmitriev