Abstract: A vacuum processing apparatus that can excellently perform uniform processing and can efficiently perform regular maintenance and occasional maintenance even in the case where the diameter of a workpiece is increased. A vacuum processing apparatus having a vacuum transport chamber includes: a lower container in a cylindrical shape; a sample stage unit including a sample stage and a ring-shaped sample stage base having a support beam disposed in axial symmetry with respect to the center axis of the sample stage; an upper container in a cylindrical shape; and a moving unit that is fixed to the sample stage base and moves the sample stage unit in the vertical direction and in the horizontal direction.

Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber, an upper electrode, a lower electrode, a first high-frequency power source, a second high-frequency power source, a first matching box, a second matching box, a copper plate for connecting an electrode shaft of the lower electrode with the second matching box, a drive base on which the electrode shaft of the lower electrode and the second matching box are mounted, a drive unit for ascending or descending the drive base, and an exhaust unit disposed at a position equally distanced from an exhaust outlet by a distance.

Abstract: A vacuum processing apparatus includes a vacuum processing chamber, an upper electrode, a lower electrode, a first high-frequency power source, a second high-frequency power source, a first matching box, a second matching box, a copper plate for connecting an electrode shaft of the lower electrode with the second matching box, a drive base on which the electrode shaft of the lower electrode and the second matching box are mounted, a drive unit for ascending or descending the drive base, and an exhaust unit disposed at a position equally distanced from an exhaust outlet by a distance.

Abstract: A vacuum processing apparatus that can excellently perform uniform processing and can efficiently perform regular maintenance and occasional maintenance even in the case where the diameter of a workpiece is increased. A vacuum processing apparatus having a vacuum transport chamber includes: a lower container in a cylindrical shape; a sample stage unit including a sample stage and a ring-shaped sample stage base having a support beam disposed in axial symmetry with respect to the center axis of the sample stage; an upper container in a cylindrical shape; and a moving unit that is fixed to the sample stage base and moves the sample stage unit in the vertical direction and in the horizontal direction.

Abstract: The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

Abstract: A plasma processing apparatus includes a processing chamber, a flat-plate-like dielectric window, an induction coil, a flat electrode, a RF power source, a gas supply unit, and a sample stage on which a sample is mounted. A process gas supply plate is provided opposite the dielectric window on an inner side of the processing chamber, and a recess portion is formed in the flat electrode on a side opposite the induction coil corresponding to a gas supply position of the process gas supply plate.

Abstract: A plasma processing apparatus which includes a plasma processing chamber for plasma-processing a sample, an induction antenna disposed outside the plasma processing chamber, a radio-frequency power supply for supplying radio-frequency power to the induction antenna, and a unit for controlling electrostatic capacity including a Faraday shield capacitively coupled with plasma and a dielectric window allowing an induction magnetic field to transmit into the plasma processing chamber is provided; electrostatic capacity between the Faraday shield and the dielectric window at a center portion and electrostatic capacity between the Faraday shield and the dielectric window at an edge portion are controlled.

Abstract: In a plasma processing apparatus that can adjust an induction magnetic field distribution of power feeding sections of an induction coil, correct a plasma distribution on a specimen, and apply uniform plasma processing to the specimen, the specimen is subjected to plasma processing, a dielectric window that forms the upper surface of the vacuum processing chamber, a gas lead-in section that leads gas into the vacuum processing chamber, a specimen table that is arranged in the vacuum processing chamber and on which the specimen is placed, an induction coil provided above the dielectric window, and a radio-frequency power supply that supplies radio-frequency power to the induction coil. The plasma processing apparatus includes a flat conductor arranged below the induction coil. The induction coil includes crossing power feeding sections. The conductor is arranged below the power feeding sections.

Abstract: A uniform plasma processing to a sample is performed by adjusting the distribution of the induced magnetic field in an inductively-coupled-plasma processing apparatus and correcting the plasma distribution on the sample. Between an induction coil and a dielectric window a conductor is provided along the induction coil and side by side with at least a part of the induction coil in its circumferential direction. The conductor is set up at a location where the intensity of the induced magnetic field generated from the induction coil is wished to be weakened and the relationship of Lp?Lr is satisfied, letting the shortest distance from the induction coil to the surface of the conductor be Lr and letting the shortest distance from the induction coil to the plasma generated directly under the dielectric window be Lp.

Abstract: The invention provides a plasma processing apparatus having a means for generating a plasma capable of correcting the eccentricity of the plasma diffused above the wafer caused by magnetic field or by vacuum eccentricity, comprising a vacuum processing chamber in which a sample is processed via plasma, a gas supply means for supplying gas into the vacuum processing chamber, a sample stage disposed within the vacuum processing chamber on which the sample is placed, an induction coil disposed outside the vacuum processing chamber, a radio frequency power supply for supplying radio frequency power to the induction coil, a Faraday shield being capacitively coupled with the plasma, and an eccentricity correction means disposed between the induction coil and a dielectric sealing window constituting an upper surface of the vacuum processing chamber, wherein the eccentricity correction means generates a plasma capable of correcting the eccentricity of the plasma.

Abstract: The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.

Abstract: A plasma processing apparatus is disclosed in which a wafer mounted on a sample stage arranged in a processing chamber in a vacuum vessel is processed using a plasma formed in the processing chamber. A dielectric bell jar makes up the upper part of the vacuum vessel and surrounds processing chamber. A coil-shaped antenna wound on the outer periphery of the bell jar is supplied with the high-frequency power to form the plasma. A Faraday shield of a conductive material is formed of double layers including inner and outer layers arranged in spaced relation to each other between the antenna and the bell jar, each layer having a plurality of slits and set at a predetermined potential. The slits of the inner and outer layers of the Faraday shield are arranged in staggered fashion.