Patents by Inventor Yusei Kuwabara

Yusei Kuwabara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220301832
    Abstract: A plasma processing apparatus includes a plasma processing chamber; a plasma generator configured to generate a plasma in the plasma processing chamber; a substrate support disposed in the plasma processing chamber; a first conductive ring disposed to surround a substrate on the substrate support; an insulating ring disposed to surround the first conductive ring; and a second conductive ring disposed to surround the insulating ring, and connected to a ground potential.
    Type: Application
    Filed: March 16, 2022
    Publication date: September 22, 2022
    Inventors: Takashi Aramaki, Hiroshi Tsujimoto, Lifu Li, Yusei Kuwabara, Ryoya Abe
  • Publication number: 20220122814
    Abstract: A plasma processing apparatus includes a processing chamber; a placing table disposed in the processing chamber to place a substrate thereon; an upper electrode facing the placing table; a member configured to adjust a temperature of the upper electrode; a first sensor provided within the member configured to adjust the temperature of the upper electrode, and configured to measure the temperature of the upper electrode; and a first sheet member, disposed between the upper electrode and the first sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz.
    Type: Application
    Filed: October 15, 2021
    Publication date: April 21, 2022
    Inventors: Takahiro Senda, Yuzo Uemura, Yusei Kuwabara, Tomoya Ujiie
  • Publication number: 20210313201
    Abstract: An upper member is disposed at an upper portion within a processing chamber. A ceiling member forms a ceiling of the processing chamber, and is provided with a through hole at a facing surface thereof which faces the upper member. A supporting member supports the upper member with a first end thereof located inside the processing chamber by being inserted through the through hole and slid within the through hole. An accommodation member accommodates therein a second end of the supporting member located outside the processing chamber, and is partitioned into a first space at a first end side and a second space at a second end side in a moving direction with respect to the second end. A pressure controller generates a pressure difference between the first space and the second space. The pressure difference allows the supporting member to be moved.
    Type: Application
    Filed: April 6, 2021
    Publication date: October 7, 2021
    Inventors: Yusei Kuwabara, Takahiro Senda
  • Publication number: 20210305022
    Abstract: A substrate support includes a substrate support surface on which a substrate is placed, a ring support surface on which an edge ring is placed to surround the substrate placed on the substrate support surface, and an electrode configured to attract and hold the edge ring on the ring support surface by an electrostatic force. A heat transfer sheet is attached to a surface of the edge ring facing the ring support surface, and the edge ring is placed on the ring support surface via the heat transfer sheet. A conductive film is formed on a surface of the heat transfer sheet facing the ring support surface. Further, the edge ring is held on the ring support surface by attracting and holding the conductive film of the heat transfer sheet attached to the edge ring onto the ring support surface by the electrostatic force generated by the electrode.
    Type: Application
    Filed: March 9, 2021
    Publication date: September 30, 2021
    Applicant: Tokyo Electron Limited
    Inventors: Hiroshi TSUJIMOTO, Yusei KUWABARA, Lifu LI
  • Publication number: 20210159058
    Abstract: Provided is a thermal conductive member that can stably transfer heat and can be easily maintained. The thermal conductive member is provided in a plasma processing apparatus, the plasma processing apparatus including: a first electrostatic chuck on which a substrate is mounted in a chamber that provides a plasma processing space; a second electrostatic chuck provided on an outer periphery of the first electrostatic chuck; an edge ring which is provided on the second electrostatic chuck so as to surround a region on which the substrate is mounted and at least a portion of which is made of a conductive member; and an electrode for edge ring to which a voltage for electrostatically attracting the edge ring is applied in a region corresponding to the edge ring inside the second electrostatic chuck, in which the thermal conductive member is arranged between the second electrostatic chuck and the edge ring.
    Type: Application
    Filed: November 18, 2020
    Publication date: May 27, 2021
    Inventor: Yusei Kuwabara
  • Patent number: 10304666
    Abstract: A plasma processing apparatus includes: a chamber; a placing table; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the semiconductor wafer placed on the placing table; an exhaust device configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, and forming an opening within the exhaust path to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.
    Type: Grant
    Filed: July 18, 2016
    Date of Patent: May 28, 2019
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Ryo Sasaki, Yusei Kuwabara
  • Publication number: 20170025256
    Abstract: A plasma processing apparatus includes: a chamber; a placing table; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the semiconductor wafer placed on the placing table; an exhaust device configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, and foil ling an opening within the exhaust path to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.
    Type: Application
    Filed: July 18, 2016
    Publication date: January 26, 2017
    Applicant: TOKYO ELECTRON LIMITED
    Inventors: Ryo SASAKI, Yusei KUWABARA
  • Patent number: 9425028
    Abstract: A plasma processing apparatus includes an upper electrode arranged at a processing chamber and including a plurality of gas supplying zones, a branch pipe including a plurality of branch parts, an addition pipe connected to at least one of the branch parts, and a plurality of gas pipes that connect the branch parts to the gas supplying zones. The upper electrode supplies a processing gas including a main gas to the processing chamber via the gas supplying zones. The branch pipe divides the processing gas according to a predetermined flow rate ratio and supplies the divided processing gas to the gas supplying zones. The addition pipe adds an adjustment gas. A gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected includes a bending portion for preventing a gas concentration variation according to an adjustment gas-to-main gas molecular weight ratio.
    Type: Grant
    Filed: October 21, 2013
    Date of Patent: August 23, 2016
    Assignee: Tokyo Electron Limited
    Inventors: Yusei Kuwabara, Nobuaki Shindo, Sachie Ishibashi, Takahiko Kato, Noboru Maeda
  • Publication number: 20140116620
    Abstract: A plasma processing apparatus includes an upper electrode arranged at a processing chamber and including a plurality of gas supplying zones, a branch pipe including a plurality of branch parts, an addition pipe connected to at least one of the branch parts, and a plurality of gas pipes that connect the branch parts to the gas supplying zones. The upper electrode supplies a processing gas including a main gas to the processing chamber via the gas supplying zones. The branch pipe divides the processing gas according to a predetermined flow rate ratio and supplies the divided processing gas to the gas supplying zones. The addition pipe adds an adjustment gas. A gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected includes a bending portion for preventing a gas concentration variation according to an adjustment gas-to-main gas molecular weight ratio.
    Type: Application
    Filed: October 21, 2013
    Publication date: May 1, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Yusei KUWABARA, Nobuaki SHINDO, Sachie ISHIBASHI, Takahiko KATO, Noboru MAEDA
  • Patent number: D699199
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: February 11, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Yusei Kuwabara, Keiichi Nagakubo
  • Patent number: D709537
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: July 22, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Yusei Kuwabara, Keiichi Nagakubo
  • Patent number: D709539
    Type: Grant
    Filed: March 29, 2012
    Date of Patent: July 22, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Yusei Kuwabara, Keiichi Nagakubo