Abstract: A plasma processing apparatus includes a processing chamber; a placing table disposed in the processing chamber to place a substrate thereon; an upper electrode facing the placing table; a member configured to adjust a temperature of the upper electrode; a first sensor provided within the member configured to adjust the temperature of the upper electrode, and configured to measure the temperature of the upper electrode; and a first sheet member, disposed between the upper electrode and the first sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz.

Abstract: An upper member is disposed at an upper portion within a processing chamber. A ceiling member forms a ceiling of the processing chamber, and is provided with a through hole at a facing surface thereof which faces the upper member. A supporting member supports the upper member with a first end thereof located inside the processing chamber by being inserted through the through hole and slid within the through hole. An accommodation member accommodates therein a second end of the supporting member located outside the processing chamber, and is partitioned into a first space at a first end side and a second space at a second end side in a moving direction with respect to the second end. A pressure controller generates a pressure difference between the first space and the second space. The pressure difference allows the supporting member to be moved.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a plasma generator configured to generate a plasma in the plasma processing chamber; a substrate support disposed in the plasma processing chamber; a first conductive ring disposed to surround a substrate on the substrate support; an insulating ring disposed to surround the first conductive ring; and a second conductive ring disposed to surround the insulating ring, and connected to a ground potential.

Abstract: A plasma processing apparatus includes a processing chamber; a placing table disposed in the processing chamber to place a substrate thereon; an upper electrode facing the placing table; a member configured to adjust a temperature of the upper electrode; a first sensor provided within the member configured to adjust the temperature of the upper electrode, and configured to measure the temperature of the upper electrode; and a first sheet member, disposed between the upper electrode and the first sensor, having a relative dielectric constant of 2.4 or higher at a frequency of 1 MHz.

Abstract: An upper member is disposed at an upper portion within a processing chamber. A ceiling member forms a ceiling of the processing chamber, and is provided with a through hole at a facing surface thereof which faces the upper member. A supporting member supports the upper member with a first end thereof located inside the processing chamber by being inserted through the through hole and slid within the through hole. An accommodation member accommodates therein a second end of the supporting member located outside the processing chamber, and is partitioned into a first space at a first end side and a second space at a second end side in a moving direction with respect to the second end. A pressure controller generates a pressure difference between the first space and the second space. The pressure difference allows the supporting member to be moved.

Abstract: A substrate support includes a substrate support surface on which a substrate is placed, a ring support surface on which an edge ring is placed to surround the substrate placed on the substrate support surface, and an electrode configured to attract and hold the edge ring on the ring support surface by an electrostatic force. A heat transfer sheet is attached to a surface of the edge ring facing the ring support surface, and the edge ring is placed on the ring support surface via the heat transfer sheet. A conductive film is formed on a surface of the heat transfer sheet facing the ring support surface. Further, the edge ring is held on the ring support surface by attracting and holding the conductive film of the heat transfer sheet attached to the edge ring onto the ring support surface by the electrostatic force generated by the electrode.

Abstract: Provided is a thermal conductive member that can stably transfer heat and can be easily maintained. The thermal conductive member is provided in a plasma processing apparatus, the plasma processing apparatus including: a first electrostatic chuck on which a substrate is mounted in a chamber that provides a plasma processing space; a second electrostatic chuck provided on an outer periphery of the first electrostatic chuck; an edge ring which is provided on the second electrostatic chuck so as to surround a region on which the substrate is mounted and at least a portion of which is made of a conductive member; and an electrode for edge ring to which a voltage for electrostatically attracting the edge ring is applied in a region corresponding to the edge ring inside the second electrostatic chuck, in which the thermal conductive member is arranged between the second electrostatic chuck and the edge ring.

Abstract: A plasma processing apparatus includes: a chamber; a placing table; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the semiconductor wafer placed on the placing table; an exhaust device configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, and forming an opening within the exhaust path to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.

Abstract: A plasma processing apparatus includes: a chamber; a placing table; an exhaust path provided around the placing table to surround the placing table, and configured to exhaust a gas within a processing space above the semiconductor wafer placed on the placing table; an exhaust device configured to exhaust the gas within the processing space through the exhaust path; a baffle plate having a plurality of through holes and provided between the processing space and the exhaust path to surround the placing table; and a rectifying plate provided around the placing table to surround the placing table within the exhaust path at a position farther from the processing space than the baffle plate, and foil ling an opening within the exhaust path to make a sectional area of a flow path within the exhaust path larger at a position farther from a position within the exhaust path connected to the exhaust device.

Abstract: A plasma processing apparatus includes an upper electrode arranged at a processing chamber and including a plurality of gas supplying zones, a branch pipe including a plurality of branch parts, an addition pipe connected to at least one of the branch parts, and a plurality of gas pipes that connect the branch parts to the gas supplying zones. The upper electrode supplies a processing gas including a main gas to the processing chamber via the gas supplying zones. The branch pipe divides the processing gas according to a predetermined flow rate ratio and supplies the divided processing gas to the gas supplying zones. The addition pipe adds an adjustment gas. A gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected includes a bending portion for preventing a gas concentration variation according to an adjustment gas-to-main gas molecular weight ratio.

Abstract: A plasma processing apparatus includes an upper electrode arranged at a processing chamber and including a plurality of gas supplying zones, a branch pipe including a plurality of branch parts, an addition pipe connected to at least one of the branch parts, and a plurality of gas pipes that connect the branch parts to the gas supplying zones. The upper electrode supplies a processing gas including a main gas to the processing chamber via the gas supplying zones. The branch pipe divides the processing gas according to a predetermined flow rate ratio and supplies the divided processing gas to the gas supplying zones. The addition pipe adds an adjustment gas. A gas flow path of the gas pipe connected to the branch part to which the addition pipe is connected includes a bending portion for preventing a gas concentration variation according to an adjustment gas-to-main gas molecular weight ratio.