Patents by Inventor Yusheng Bian

Yusheng Bian has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200235252
    Abstract: The present disclosure generally relates to semiconductor detectors for use in optoelectronic devices and integrated circuit (IC) chips, and methods for forming same. More particularly, the present disclosure relates to integration of semiconductor detectors with Bragg reflectors. The photodetector of the present disclosure includes a substrate, a Bragg reflector disposed on the substrate, and a semiconductor detector disposed on the Bragg reflector. The Bragg reflector includes alternating layers of a semiconductor material and a dielectric material.
    Type: Application
    Filed: January 21, 2019
    Publication date: July 23, 2020
    Inventors: AJEY POOVANNUMMOOTTIL JACOB, THEODORE J. LETAVIC, ABU THOMAS, YUSHENG BIAN
  • Patent number: 10718903
    Abstract: Structures for a waveguide bend and methods of fabricating a structure for a waveguide bend. A first waveguide core has a first section, a second section, and a first waveguide bend connecting the first section with the second section. The first waveguide core has a first side surface extending about an outer radius of the first waveguide bend. A second waveguide core also has a first section, a second section, and a second waveguide bend connecting the first section with the second section. The second waveguide core has a second side surface extending about an outer radius of the second waveguide bend. The first waveguide bend is spaced from the second waveguide bend in a first non-contacting relationship with a gap between the first side surface and the second side surface. The gap has a perpendicular distance selected to permit optical signal transfer between the first and second waveguide bends.
    Type: Grant
    Filed: June 14, 2019
    Date of Patent: July 21, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob
  • Patent number: 10698159
    Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A first dielectric layer comprised of a first silicon nitride is formed. The waveguide is arranged over the first dielectric layer. A second dielectric layer is formed that is arranged over the waveguide. The second dielectric layer is composed of a second silicon nitride having a lower absorption of optical signals than the first silicon nitride.
    Type: Grant
    Filed: October 19, 2018
    Date of Patent: June 30, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob
  • Patent number: 10690845
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to three dimensional (3D) optical interconnect structures and methods of manufacture. The structure includes: a first structure having a grating coupler and a first optical waveguide structure; and a second structure having a second optical waveguide structure in alignment with the first optical waveguide structure and which has a modal effective index that matches to the first optical waveguide structure.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: June 23, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ajey Poovannummoottil Jacob, Abu Thomas, Yusheng Bian
  • Patent number: 10684530
    Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. An electro-optic modulator is arranged over a portion of a waveguide core. The electro-optic modulator includes an electrode, an active layer arranged adjacent to the electrode, and a dielectric layer including a portion that has a lateral arrangement between the electrode and the active layer. The active layer is composed of a material having a refractive index that is a function of a bias voltage applied to the electrode and the active layer.
    Type: Grant
    Filed: February 28, 2019
    Date of Patent: June 16, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob, Abu Thomas
  • Patent number: 10670804
    Abstract: Waveguiding structures and methods of fabricating a waveguiding structure. The waveguiding structure includes a waveguide and an array of semiconductor fins that are arranged at least in part inside the waveguide.
    Type: Grant
    Filed: December 28, 2018
    Date of Patent: June 2, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Abu Thomas, Ajey Poovannummoottil Jacob
  • Publication number: 20200166709
    Abstract: Structures for a waveguide and methods of fabricating a structure for a waveguide. A grating coupler is formed that has an arrangement of grating structures. A conformal layer is arranged over the plurality of grating structures. The conformal layer is composed of a tunable material having a refractive index that changes with an applied voltage.
    Type: Application
    Filed: November 26, 2018
    Publication date: May 28, 2020
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob
  • Patent number: 10649245
    Abstract: Structures for an electro-optic modulator and methods of fabricating a structure for an electro-optic modulator. The electro-optic modulator is arranged over a portion of a first waveguide core. The electro-optic modulator may include an electrode, an active layer, a second waveguide core, and a dielectric layer that is arranged between the active layer and the second waveguide core. The active layer is composed of a material having a refractive index that is a function of a bias voltage applied between the electrode and the first waveguide core.
    Type: Grant
    Filed: March 11, 2019
    Date of Patent: May 12, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob, Abu Thomas
  • Patent number: 10649140
    Abstract: Structures including a waveguide core and methods of fabricating a structure including a waveguide core. A back-end-of-line interconnect structure includes a cap layer, an interlayer dielectric layer, and one or more metal features embedded in the interlayer dielectric layer. The interlayer dielectric layer is stacked in a vertical direction with the cap layer. The one or more metal features have an overlapping arrangement in a lateral direction with the waveguide core, which is arranged under the back-end-of-line interconnect structure.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: May 12, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob, Abu Thomas
  • Patent number: 10641956
    Abstract: Structures including a waveguide core and methods of fabricating a structure including a waveguide core. A back-end-of-line interconnect structure has an interlayer dielectric layer and a cap layer stacked over the interlayer dielectric layer. A waveguide core includes a section arranged beneath the cap layer. The waveguide core has a first index of refraction that varies as a function of width, and the cap layer has a second index of refraction. The section of the waveguide core has a width that is selected such that the first index of refraction is substantially equal to the second index of refraction to provide phase matching effective for coupling a portion of an optical signal from the waveguide core to the cap layer.
    Type: Grant
    Filed: March 4, 2019
    Date of Patent: May 5, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob, Abu Thomas
  • Publication number: 20200124796
    Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A first dielectric layer comprised of a first silicon nitride is formed. The waveguide is arranged over the first dielectric layer. A second dielectric layer is formed that is arranged over the waveguide. The second dielectric layer is composed of a second silicon nitride having a lower absorption of optical signals than the first silicon nitride.
    Type: Application
    Filed: October 19, 2018
    Publication date: April 23, 2020
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob
  • Publication number: 20200088942
    Abstract: Structures with waveguides in multiple levels and methods of fabricating a structure that includes waveguides in multiple levels. A waveguide crossing has a first waveguide and a second waveguide arranged to intersect the first waveguide. A third waveguide is displaced vertically from the waveguide crossing, The third waveguide includes a portion having an overlapping arrangement with a portion of the first waveguide. The overlapping portions of the first and third waveguides are configured to transfer optical signals between the first waveguide and the third waveguide.
    Type: Application
    Filed: September 18, 2018
    Publication date: March 19, 2020
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob, Abu Thomas
  • Patent number: 10585245
    Abstract: Structures that include an optical component, such as a grating coupler, and methods of fabricating a structure that includes an optical component, such as a grating coupler. First and second layers are arranged over the optical component with the first layer arranged between the second layer and the optical component. The first and second layers are each composed of a tunable material having a refractive index that is a function of a bias voltage applied to the first layer and the second layer.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: March 10, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Abu Thomas, Ajey Poovannummoottil Jacob
  • Patent number: 10585219
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with multiple configurations and methods of manufacture. A grating coupler structure includes: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material.
    Type: Grant
    Filed: June 5, 2018
    Date of Patent: March 10, 2020
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Ajey Poovannummoottil Jacob, Yusheng Bian
  • Publication number: 20200026000
    Abstract: Structures including a waveguide arrangement and methods of fabricating a structure that includes a waveguide arrangement. A second waveguide spaced in a lateral direction from a first waveguide, a third waveguide spaced in a vertical direction from the first waveguide, and a fourth waveguide spaced in the vertical direction from the second waveguide. The third waveguide is arranged in the lateral direction to provide a first overlapping relationship with the first waveguide. The fourth waveguide is arranged in the lateral direction to provide a second overlapping relationship with the second waveguide.
    Type: Application
    Filed: July 20, 2018
    Publication date: January 23, 2020
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob
  • Publication number: 20200012045
    Abstract: Waveguide bends and methods of fabricating waveguide bends. A first waveguide bend is contiguous with a waveguide. A second waveguide bend is spaced from a surface at an inner radius of the first waveguide bend by a gap. The second waveguide bend may have a substantially concentric arrangement with the first waveguide bend.
    Type: Application
    Filed: July 3, 2018
    Publication date: January 9, 2020
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob
  • Publication number: 20190369309
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with multiple configurations and methods of manufacture. A grating coupler structure includes: a polysilicon material with a first grating coupling pattern; a SiN material with second grating coupling pattern; a dielectric material covering the polysilicon material and the SiN material; and a back end of line (BEOL) multilayer stack over the dielectric material.
    Type: Application
    Filed: June 5, 2018
    Publication date: December 5, 2019
    Inventors: Ajey Poovannummoottil JACOB, Yusheng BIAN
  • Patent number: 10444433
    Abstract: Structures that include a waveguide and methods of fabricating a structure that includes a waveguide. A tapered feature composed of a dielectric material is arranged over the waveguide. The tapered feature includes a sidewall that is angled relative to a longitudinal axis of the waveguide.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 15, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Abu Thomas, Ajey Poovannummoottil Jacob, Kenneth J. Giewont, Karen Nummy, Andreas Stricker, Bo Peng
  • Publication number: 20190310399
    Abstract: The present disclosure relates to semiconductor structures and, more particularly, to grating couplers with structured cladding and methods of manufacture. A structure includes: a grating coupler in a dielectric material; a back end of line (BEOL) multilayer stack over the dielectric material; and a multi-layered cladding structure of alternating materials directly on the BEOL multilayer stack.
    Type: Application
    Filed: April 4, 2018
    Publication date: October 10, 2019
    Inventors: Ajey Poovannummoottil JACOB, Yusheng BIAN
  • Patent number: 10436982
    Abstract: Structures including waveguide bends, methods of fabricating a structure that includes waveguide bends, and systems that integrate optical components containing different materials. A first waveguide bend is contiguous with a waveguide, and a second waveguide bend is spaced in a vertical direction from the first waveguide bend. The second waveguide bend has an overlapping arrangement with the first waveguide bend in a lateral direction.
    Type: Grant
    Filed: July 18, 2018
    Date of Patent: October 8, 2019
    Assignee: GLOBALFOUNDRIES INC.
    Inventors: Yusheng Bian, Ajey Poovannummoottil Jacob