Abstract: A printing device includes a holder including: a first movable portion including a first support portion; a second movable portion including a second support portion; a pinion; a spring; an adjustment screw; a handle rotatable with the adjustment screw; and a stopper threadingly engaged with the adjustment screw. The first movable portion is movable in a first direction and a second direction opposite the first direction. The second movable portion is movable in the first direction and the second direction in accordance with movement of the first movable portion in the second direction and the first direction. The handle is positioned outside of a region defined between the first and second support portions positioned remotest from each other in the first direction. The stopper is in abutment with one of the first and second movable portions to restrict movements of the first and second movable portions.

Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first counter magnetic layer is provided between the third portion and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first portion toward the second portion. The first nonmagnetic layer is provided between the first magnetic layer and the first counter magnetic layer. The third portion includes a first position, and a second position between the first position and the first counter magnetic layer in the first direction. A second concentration of boron at the second position is lower than a first concentration of boron at the first position.

Abstract: An attachment capable of being attached, in a detachable manner, to an accommodation part of a printing apparatus which is for accommodating a print medium, the attachment being configured to support a roll including the print medium which is wound, the attachment including: a housing having a substantially box shape of which an upper part is opened, the housing being configured to accommodate the roll inside thereof in a replaceable manner; an engaging part provided to the housing and configured to engage, in a disengageable manner, to an engaged part provided to the accommodation part when the housing is attached to the accommodation part; and a support part provided to the housing and configured to rotatably support the roll.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.

Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.

Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive member includes a first layer. The first layer includes at least one selected from the group consisting of HfN having a NaCl structure, HfN having a fcc structure, and HfC having a NaCl structure. The first magnetic layer is separated from the first layer in a first direction. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: A printing device includes a holder including: a first movable portion including a first support portion; a second movable portion including a second support portion; a pinion; a spring; an adjustment screw; a handle rotatable with the adjustment screw; and a stopper threadingly engaged with the adjustment screw. The first movable portion is movable in a first direction and a second direction opposite the first direction. The second movable portion is movable in the first direction and the second direction in accordance with movement of the first movable portion in the second direction and the first direction. The handle is positioned outside of a region defined between the first and second support portions positioned remotest from each other in the first direction. The stopper is in abutment with one of the first and second movable portions to restrict movements of the first and second movable portions.

Abstract: According to one embodiment, a magnetic memory device includes a first magnetic region, a first counter magnetic region, and a first nonmagnetic region provided between the first magnetic region and the first counter magnetic region. The first magnetic region includes a first magnetic film, a second magnetic film, and an intermediate film. The first magnetic film is provided between the second magnetic film and the first nonmagnetic region. The intermediate film includes Ru and is provided between the first magnetic film and the second magnetic film. A distance along a first direction between the first magnetic film and the second magnetic film is not less than 1.8 nm and not more than 2.2 nm. The first direction is from the first counter magnetic region toward the first magnetic region.

Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a first counter magnetic layer, and a first nonmagnetic layer. The conductive member includes a first portion, a second portion, and a third portion between the first portion and the second portion. The first counter magnetic layer is provided between the third portion and the first magnetic layer in a first direction crossing a second direction. The second direction is from the first portion toward the second portion. The first nonmagnetic layer is provided between the first magnetic layer and the first counter magnetic layer. The third portion includes a first position, and a second position between the first position and the first counter magnetic layer in the first direction. A second concentration of boron at the second position is lower than a first concentration of boron at the first position.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.

Abstract: According to one embodiment, a magnetic memory device includes a conductive member, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The conductive member includes a first layer. The first layer includes at least one selected from the group consisting of HfN having a NaCl structure, HfN having a fcc structure, and HfC having a NaCl structure. The first magnetic layer is separated from the first layer in a first direction. The second magnetic layer is provided between the first layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer.

Abstract: According to one embodiment, a magnetic memory device includes a first conductive layer, a first stacked body, and a controller. The first conductive layer includes a first region, a second region, and a third region between the first region and the second region. The first stacked body includes a first magnetic layer, a second magnetic layer provided between the third region and the first magnetic layer in a first direction crossing a second direction, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. The second direction is from the first region toward the second region. The controller electrically is connected to the first region, the second region, and the first magnetic layer. The controller performs at least first to third operations. In the operations, the controller sets the first stacked body to first to third resistance state.

Abstract: A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.

Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.

Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.

Abstract: A magnetoresistive element includes: a first ferromagnetic layer; a second ferromagnetic layer; and a first nonmagnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, the first ferromagnetic layer including (MnxGay)100-zPtz, the (MnxGay)100-zPtz having a tetragonal crystal structure, where 45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, and 0 atm %<z?7 atm %.