Patents by Inventor Yushi Kato
Yushi Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170367467Abstract: An attaching loop member to mount a printing device on a belt-like member worn by a user includes: a device-side member connectable to the printing device; and an attaching-side member mountable on the belt-like member worn by the user. The device-side member includes: a device-side plate portion; a fixing portion fixable to the printing device; a shaft portion and an engaging portion provided on the device-side plate portion. The attaching-side member includes: a bearing portion engageable with the shaft portion; an engaged portion engageable with the engaging portion; and an open portion providing an open region between the bearing portion and the engaged portion to allow the belt-like member to penetrate through the open region. The engagement of the shaft portion with the bearing portion allows the device-side member to pivot relative to the attaching-side member to realize engagement and disengagement of the engaging portion relative to the engaged portion.Type: ApplicationFiled: February 24, 2017Publication date: December 28, 2017Inventors: Yushi Kato, Nobuyuki Iwai
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Patent number: 9848692Abstract: An attaching loop member to mount a printing device on a belt-like member worn by a user includes: a device-side member connectable to the printing device; and an attaching-side member mountable on the belt-like member worn by the user. The device-side member includes: a device-side plate portion; a fixing portion fixable to the printing device; a shaft portion and an engaging portion provided on the device-side plate portion. The attaching-side member includes: a bearing portion engageable with the shaft portion; an engaged portion engageable with the engaging portion; and an open portion providing an open region between the bearing portion and the engaged portion to allow the belt-like member to penetrate through the open region. The engagement of the shaft portion with the bearing portion allows the device-side member to pivot relative to the attaching-side member to realize engagement and disengagement of the engaging portion relative to the engaged portion.Type: GrantFiled: February 24, 2017Date of Patent: December 26, 2017Assignee: Brother Kogyo Kabushiki KaishaInventors: Yushi Kato, Nobuyuki Iwai
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Patent number: 9834014Abstract: The disclosure discloses a printer including a printing head, a DC motor, an energization control part, a short-circuiting device, a temperature detecting device, and a braking control part. The DC motor is configured to generate a driving force for feed by a feeder. The energization control part is configured to control energization by an energizing device. The short-circuiting device is configured to short-circuit a positive electrode and an negative electrode of the DC motor and brake when deenergized under control of the energization control part. The temperature detecting device is configured to detect a temperature of ambient surroundings. The braking control part is configured to control the short-circuiting device in accordance with the temperature detected by the temperature detecting device, to thereby variably control an operation mode of the braking by the short circuiting.Type: GrantFiled: January 12, 2017Date of Patent: December 5, 2017Assignee: Brother Kogyo Kabushiki KaishaInventors: Ryosuke Ishikawa, Yasuhiko Murakami, Yushi Kato
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Patent number: 9793469Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.Type: GrantFiled: September 8, 2016Date of Patent: October 17, 2017Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yushi Kato, Tadaomi Daibou, Yuichi Ohsawa, Shumpei Omine, Naoki Hase
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Publication number: 20170203582Abstract: The disclosure discloses a printer including a printing head, a DC motor, an energization control part, a short-circuiting device, a temperature detecting device, and a braking control part. The DC motor is configured to generate a driving force for feed by a feeder. The energization control part is configured to control energization by an energizing device. The short-circuiting device is configured to short-circuit a positive electrode and an negative electrode of the DC motor and brake when deenergized under control of the energization control part. The temperature detecting device is configured to detect a temperature of ambient surroundings. The braking control part is configured to control the short-circuiting device in accordance with the temperature detected by the temperature detecting device, to thereby variably control an operation mode of the braking by the short circuiting.Type: ApplicationFiled: January 12, 2017Publication date: July 20, 2017Inventors: Ryosuke Ishikawa, Yasuhiko Murakami, Yushi Kato
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Publication number: 20170179374Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.Type: ApplicationFiled: February 28, 2017Publication date: June 22, 2017Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Shumpei OMINE, Tadaomi Daibou, Yushi Kato, Naoki Hase, Junichi Ito
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Publication number: 20170170389Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a magnetic material containing at least one element selected from a first group consisting of Mn, Fe, Co, and Ni; at least one element selected from a second group consisting of Ru, Rh, Pd, Ag, Os, Ir, Pt, and Au; and at least one element selected from a third group consisting of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.Type: ApplicationFiled: February 28, 2017Publication date: June 15, 2017Applicant: Kabushiki Kaisha ToshibaInventors: Naoki HASE, Takao OCHIAI, Tadaomi DAIBOU, Yushi KATO, Shumpei OMINE, Junichi ITO
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Publication number: 20160380185Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn2VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.Type: ApplicationFiled: September 8, 2016Publication date: December 29, 2016Applicants: Kabushiki Kaisha Toshiba, Tohoku UniversityInventors: Yushi KATO, Tadaomi DAIBOU, Qinli MA, Atsushi SUGIHARA, Shigemi MIZUKAMI, Terunobu MIYAZAKI
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Publication number: 20160380186Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.Type: ApplicationFiled: September 8, 2016Publication date: December 29, 2016Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi DAIBOU, Yushi KATO, Shumpei OMINE, Naoki HASE, Junichi ITO
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Publication number: 20160380029Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.Type: ApplicationFiled: September 12, 2016Publication date: December 29, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Naoki HASE, Tadaomi Daibou, Yushi Kato, Shumpei Omine, Junichi Ito
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Publication number: 20160380184Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a layer having an amorphous structure, the layer containing two or more elements that are contained in the first magnetic layer, the layer being disposed between the first magnetic layer and the third magnetic layer.Type: ApplicationFiled: September 8, 2016Publication date: December 29, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Yushi KATO, Tadaomi DAIBOU, Yuichi OHSAWA, Shumpei OMINE, Naoki HASE
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Publication number: 20160148975Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer including (MnxGay)100-zCoz (45 atm %?x?75 atm %, 25 atm %?y?55 atm %, x+y=100 atm %, 0 atm %<z?10 atm %).Type: ApplicationFiled: January 29, 2016Publication date: May 26, 2016Applicants: Kabushiki Kaisha Toshiba, National University Corporation Tohoku UniversityInventors: Yushi KATO, Tadaomi DAIBOU, Eiji KITAGAWA, Takao OCHIAI, Junichi ITO, Takahide KUBOTA, Shigemi MIZUKAMI, Terunobu MIYAZAKI
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Patent number: 9166065Abstract: According to one embodiment, a magnetoresistive effect element includes a first magnetic film having magnetic anisotropy and an invariable magnetization direction in a direction perpendicular to a film plane, a second magnetic film having magnetic anisotropy and a variable magnetization direction in the direction perpendicular to the film plane, and a nonmagnetic film between the first magnetic film and the second magnetic film. At least one of the first and second magnetic films includes a first magnetic layer. The first magnetic layer includes a rare earth metal, a transition metal, and boron.Type: GrantFiled: March 13, 2012Date of Patent: October 20, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Yuichi Ohsawa, Tadaomi Daibou, Yushi Kato, Eiji Kitagawa, Saori Kashiwada, Minoru Amano, Junichi Ito
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Patent number: 9117924Abstract: According to one embodiment, a magnetic memory element includes a first magnetic layer having a first surface and a second surface being opposite to the first surface, a second magnetic layer, an intermediate layer which is provided between the first surface of the first magnetic layer and the second magnetic layer, a layer which is provided on the second surface of the first magnetic layer, the layer containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer which is provided on a sidewall of the intermediate layer, the insulating layer containing at least one element selected from the Hf, Al, and Mg contained in the layer.Type: GrantFiled: December 28, 2012Date of Patent: August 25, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Eiji Kitagawa, Chikayoshi Kamata, Saori Kashiwada, Yushi Kato, Tadaomi Daibou
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Patent number: 9117995Abstract: A magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.Type: GrantFiled: September 11, 2013Date of Patent: August 25, 2015Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi Daibou, Eiji Kitagawa, Chikayoshi Kamata, Saori Kashiwada, Yushi Kato, Megumi Yakabe
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Patent number: 8878324Abstract: The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy. The present invention also relates to a magnetic memory containing the magnetoresistive element.Type: GrantFiled: January 30, 2014Date of Patent: November 4, 2014Assignees: Kabushiki Kaisha Toshiba, Tohoku UniversityInventors: Yushi Kato, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki
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Patent number: 8803267Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic film having a variable magnetization direction, a second magnetic film having an invariable magnetization direction, and a magnesium oxide film provided between the first magnetic film and the second magnetic film and being in contact with both the first magnetic film and the second magnetic film, and doped with at least one element selected from a first group consisting of copper, silver, and gold.Type: GrantFiled: September 18, 2012Date of Patent: August 12, 2014Assignee: Kabushiki Kaisha ToshibaInventors: Eiji Kitagawa, Tadaomi Daibou, Yushi Kato
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Publication number: 20140145279Abstract: The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy.Type: ApplicationFiled: January 30, 2014Publication date: May 29, 2014Applicants: Tohoku University, Kabushiki Kaisha ToshibaInventors: Yushi KATO, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki
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Publication number: 20140131649Abstract: According to one embodiment, a magnetoresistance element includes a first magnetic layer having first and second surfaces, a second magnetic layer, an intermediate layer provided between the first surface and the second magnetic layer, a first layer provided on the second surface, containing B and at least one element selected from Hf, Al, Mg, and Ti and having third and fourth surfaces, a second layer provided on the fourth surface and containing B and at least one element selected from Hf, Al, and Mg, and an insulating layer provided on a sidewall of the intermediate layer and containing at least one element selected from the Hf, Al, and Mg contained in the second layer.Type: ApplicationFiled: September 11, 2013Publication date: May 15, 2014Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi DAIBOU, Eiji KITAGAWA, Chikayoshi KAMATA, Saori KASHIWADA, Yushi KATO, Megumi YAKABE
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Patent number: 8680633Abstract: A magnetoresistive element according to an embodiment includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer provided between the first magnetic layer and the second magnetic layer, the first magnetic layer including a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %).Type: GrantFiled: March 14, 2013Date of Patent: March 25, 2014Assignees: Kabushiki Kaisha Toshiba, Tohoku UniversityInventors: Yushi Kato, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki