Patents by Inventor Yushi Kato
Yushi Kato has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10262711Abstract: A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.Type: GrantFiled: August 31, 2017Date of Patent: April 16, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Mizue Ishikawa, Yushi Kato, Yoshiaki Saito, Soichi Oikawa, Hiroaki Yoda
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Patent number: 10256394Abstract: A magnetoresistive element according to an embodiment includes: a first layer containing Al and at least one element of Ni or Co, the first layer having a CsCl structure; a first magnetic layer; a first nonmagnetic layer between the first layer and the first magnetic layer; and a second magnetic layer between the first layer and the first nonmagnetic layer, the second magnetic layer containing Mn and Ga.Type: GrantFiled: February 28, 2017Date of Patent: April 9, 2019Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Shumpei Omine, Tadaomi Daibou, Yushi Kato, Naoki Hase, Junichi Ito
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Publication number: 20190088860Abstract: A magnetic memory according to an embodiment includes: first to third terminals; a nonmagnetic conductive layer including first to third regions, the second region being disposed between the first and third regions, the first region being electrically connected to the first terminal, and the third region being electrically connected to the second terminal; and a magnetoresistive element disposed to correspond to the second region, including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the second region, and a nonmagnetic layer disposed between the first and second magnetic layers, the conductive layer including at least one of an alloy including Ir and Ta, an alloy including Ir and V, an alloy including Au and V, an alloy including Au and Nb, or an alloy including Pt and V, each of the alloys having an fcc structure.Type: ApplicationFiled: March 6, 2018Publication date: March 21, 2019Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki Saito, Tomoaki Inokuchi, Yushi Kato, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
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Publication number: 20190088297Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.Type: ApplicationFiled: November 20, 2018Publication date: March 21, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Yuichi OHSAWA, Hiroaki YODA, Altansargai BUYANDALAI, Satoshi SHIROTORI, Mariko SHIMIZU, Hideyuki SUGIYAMA, Yushi KATO
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Publication number: 20190080741Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes first and second portions, and a third portion between the first and second portions. The conductive layer includes a first metal and boron. The first magnetic layer is separated from the third portion in a first direction crossing a second direction. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The controller supplies a current to the conductive layer. The first metal includes at least one selected from the group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu.Type: ApplicationFiled: March 12, 2018Publication date: March 14, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Yushi KATO, Yoshiaki SAITO, Mizue ISHIKAWA, Soichi OIKAWA, Hiroaki YODA
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Publication number: 20190051818Abstract: According to one embodiment, a magnetic memory element includes a conductive layer, a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first magnetic layer is separated from the conductive layer. The second magnetic layer includes iron, platinum, and boron and is provided between the conductive layer and the first magnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The conductive layer includes a first region and a second region. The second region includes a first metal and boron and is provided between the first region and the second magnetic layer. The first region does not include boron, or a first concentration of boron in the first region is lower than a second concentration of boron in the second region.Type: ApplicationFiled: February 15, 2018Publication date: February 14, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Soichi OIKAWA, Yushi Kato, Mizue Ishikawa, Yoshiaki Saito, Hiroaki Yoda
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Publication number: 20190035448Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.Type: ApplicationFiled: September 28, 2018Publication date: January 31, 2019Applicant: Kabushiki Kaisha ToshibaInventors: Mariko SHIMIZU, Yuichi OHSAWA, Hideyuki SUGIYAMA, Satoshi SHIROTORI, Altansargai BUYANDALAI, Yushi KATO
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Publication number: 20180366639Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: ApplicationFiled: February 26, 2018Publication date: December 20, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Yushi Kato, Yoshiaki Saito, Soichi Oikawa, Mizue Ishikawa, Hiroaki Yoda
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Patent number: 10141037Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.Type: GrantFiled: September 14, 2017Date of Patent: November 27, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Yuichi Ohsawa, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
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Patent number: 10109332Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.Type: GrantFiled: September 14, 2017Date of Patent: October 23, 2018Assignee: Kabushiki Kaisha ToshibaInventors: Mariko Shimizu, Yuichi Ohsawa, Hideyuki Sugiyama, Satoshi Shirotori, Altansargai Buyandalai, Yushi Kato
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Patent number: 10103321Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer, the first magnetic layer containing Mn and at least one of Ge, Ga, or Al, and the third magnetic layer containing Mn2VZ, where V represents vanadium, and Z represents at least one element of Al or Ga.Type: GrantFiled: September 8, 2016Date of Patent: October 16, 2018Assignees: KABUSHIKI KAISHA TOSHIBA, TOHOKU UNIVERSITYInventors: Yushi Kato, Tadaomi Daibou, Qinli Ma, Atsushi Sugihara, Shigemi Mizukami, Terunobu Miyazaki
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Publication number: 20180277185Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.Type: ApplicationFiled: September 14, 2017Publication date: September 27, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Mariko SHIMIZU, Yuichi OHSAWA, Hideyuki SUGIYAMA, Satoshi SHIROTORI, Altansargai BUYANDALAI, Yushi KATO
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Publication number: 20180268886Abstract: A magnetic memory of an embodiment includes: first through third terminals; a conductive layer including first through third portions, the first portion being located between the second and third portions, the second and third portions being electrically connected to the first and second terminals respectively; and a magnetoresistive element including: a first magnetic layer electrically connected to the third terminal; a second magnetic layer disposed between the first magnetic layer and the first portion; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first nonmagnetic layer and the second magnetic layer; and a second nonmagnetic layer disposed between the second magnetic layer and the third magnetic layer, a sign of a spin Hall angle of the second nonmagnetic layer being different from a sign of a spin Hall angle of the conductive layer.Type: ApplicationFiled: August 31, 2017Publication date: September 20, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Mizue ISHIKAWA, Yushi KATO, Yoshiaki SAITO, Soichi OIKAWA, Hiroaki YODA
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Publication number: 20180268888Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion. The first magnetic layer is separated from the third portion. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer that is electrically connected with the third portion. The first nonmagnetic layer is curved. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation. The controller in the first operation supplies a first current to the conductive layer from the first portion toward the second portion. The controller in the second operation supplies a second current to the conductive layer from the second portion toward the first portion.Type: ApplicationFiled: September 14, 2017Publication date: September 20, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Yuichi OHSAWA, Hiroaki Yoda, Altansargai Buyandalai, Satoshi Shirotori, Mariko Shimizu, Hideyuki Sugiyama, Yushi Kato
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Publication number: 20180174634Abstract: According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, and a controller. The conductive layer includes a first portion, a second portion, and a third portion between the first and second portions. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The third portion includes a first region and a second region. The second region is provided between the first region and the second magnetic layer. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.Type: ApplicationFiled: September 11, 2017Publication date: June 21, 2018Applicant: Kabushiki Kaisha ToshibaInventors: Yushi KATO, Soichi OIKAWA, Mizue ISHIKAWA, Yoshiaki SAITO, Hiroaki YODA
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Patent number: 9991314Abstract: A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR1-xhRx)z(TM1-yZy)1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.Type: GrantFiled: September 12, 2016Date of Patent: June 5, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Naoki Hase, Tadaomi Daibou, Yushi Kato, Shumpei Omine, Junichi Ito
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Publication number: 20180145247Abstract: A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.Type: ApplicationFiled: January 19, 2018Publication date: May 24, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki SAITO, Hiroaki Yoda, Yushi Kato, Mizue Ishikawa, Soichi Oikawa
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Publication number: 20180090671Abstract: According to one embodiment, a magnetoresistive element includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first nonmagnetic layer includes an oxide including an inverse-spinel structure.Type: ApplicationFiled: September 8, 2017Publication date: March 29, 2018Applicants: Kabushiki Kaisha Toshiba, NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Yushi KATO, Tadaomi DAIBOU, Yuuzo KAMIGUCHI, Naoharu SHIMOMURA, Junichi ITO, Hiroaki SUKEGAWA, Mohamed BELMOUBARIK, Po-Han CHENG, Seiji MITANI, Tadakatsu OHKUBO, Kazuhiro HONO
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Publication number: 20180040807Abstract: A magnetic memory of an embodiment includes: a first terminal to third terminals; a first nonmagnetic layer, which is conductive, including a first portion, a second portion, and a third portion, the first portion being disposed between the second portion and the third portion, the second portion being electrically connected to the first terminal, and the third portion being electrically connected to the second terminal; a first magnetoresistive element including a first magnetic layer electrically connected to the third terminal, a second magnetic layer disposed between the first magnetic layer and the first portion, and a second nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; and a first layer at least disposed between the first portion and the second magnetic layer, and including at least one of Mg, Al, Si, Hf, or a rare earth element, and at least one of oxygen or nitrogen.Type: ApplicationFiled: February 28, 2017Publication date: February 8, 2018Applicant: KABUSHIKI KAISHA TOSHIBAInventors: Yoshiaki SAITO, Hiroaki Yoda, Yushi Kato, Mizue Ishikawa, Soichi Oikawa
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Patent number: 9859491Abstract: A magnetoresistive element according to an embodiment includes a stack structure, the stack structure including: a first magnetic layer containing Mn and at least one element of Ga, Ge, or Al; a second magnetic layer; a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer; a third magnetic layer disposed between the first magnetic layer and the first nonmagnetic layer; and a second nonmagnetic layer disposed between the first magnetic layer and the third magnetic layer, the second nonmagnetic layer containing at least one element of Mg, Ba, Ca, C, Sr, Sc, Y, Gd, Tb, Dy, Ce, Ho, Yb, Er, or B.Type: GrantFiled: September 8, 2016Date of Patent: January 2, 2018Assignee: KABUSHIKI KAISHA TOSHIBAInventors: Tadaomi Daibou, Yushi Kato, Shumpei Omine, Naoki Hase, Junichi Ito