Abstract: An ultrasonic probe of an embodiment includes a transmission and reception unit, a movable unit, a pressure signal detection unit, and an amplification unit. The transmission and reception unit includes a plurality of transducers, transmits transmission acoustic signals generated by the transducers, and receives reflection acoustic signals of the transmitted acoustic signals. The movable unit includes an acoustic radiation surface provided on a surface of the transmission and reception unit and moves due to a pressure applied to the acoustic radiation surface pressed against an object. The pressure signal detection unit detects a pressure signal corresponding to an amount of movement of the movable unit. The amplification unit amplifies the amount of movement of the movable unit.

Abstract: There is provided a vehicle glass that appropriately transmits far-infrared rays and has shock resistance. A vehicle glass (1) includes a glass member (10) in which an opening (19) penetrating the glass member (10) from a surface on a vehicle exterior side to a surface on a vehicle interior side is formed and a transmissive member (20) that is disposed in the opening (19), and has an average internal transmittance of 50% or more for light having a wavelength of 8 ?m to 13 ?m. A ratio Sa/Sb of fracture velocity Sa [km/h] measured on a surface on the vehicle of the transmissive member (20) by a chart stone chipping test and fracture velocity Sb [km/h] measured on the surface on the vehicle exterior side of the glass member (10) is 0.7 or more.

Abstract: According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to sixth semiconductor regions. The third semiconductor region includes first and second partial regions. A part of the fourth semiconductor region is between the second partial and second semiconductor regions. The fifth semiconductor region is between the second partial region and a part of the fourth semiconductor region. The sixth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The fourth electrode is between the first partial region and the third electrode. A part of the insulating member is provided between the semiconductor member and the third electrode, between the semiconductor member and the fourth electrode, and between the third and fourth electrodes.

Abstract: A semiconductor device includes a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member being positioned between the first gate electrode and the first semiconductor region, and a recording element electrically connected with the first electrode. The recording element records, as analog data, a maximum value of a change amount dV/dt of a voltage of the first electrode over time.

Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.

Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.

Abstract: The major element includes a first electrode, a second electrode, a first semiconductor layer located between the first electrode and the second electrode, the first semiconductor layer forming a first Schottky junction with the second electrode, and a first gate electrode facing the first Schottky junction. The control element includes a third electrode, a fourth electrode, a second semiconductor layer located between the third electrode and the fourth electrode, the second semiconductor layer forming a second Schottky junction with the fourth electrode, and a second gate electrode facing the second Schottky junction.

Abstract: A semiconductor device includes a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member being positioned between the first gate electrode and the first semiconductor region, a gate driver supplying the gate voltage to the first gate electrode, and a recording element electrically connected with the gate driver. The recording element records, as continuously changing analog data, a number of times that the gate voltage is supplied to the first gate electrode while being enough to switch the major element on.

Abstract: An embodiment includes a transistor section, a gate electrode pad, a gate connection member, a gate circuit section, and a casing. The transistor section includes a drain electrode, a source electrode and a gate electrode. The transistor section and the gate electrode pad are provided on a semiconductor substrate. The gate connection member connects a gate terminal and the gate electrode pad. The gate circuit section connects the gate electrode pad and the gate electrode, and includes a parallel circuit with a capacitor and a resistive element, a first connection member electrically connecting the capacitor to the gate electrode pad and a second connection member electrically connecting the capacitor to the gate electrode. The casing accommodates the transistor section, the gate electrode pad and the gate circuit section.

Abstract: A parameter optimization device includes a processing device configured to: generate a partial search space of a second dimensionality from a search space of a first dimensionality, the second dimensionality being less than the first dimensionality; select a plurality of search points in the partial search space by correcting an acquisition function with a local penalty function; and observe, in parallel, a plurality of objective functions corresponding respectively to the plurality of search points.

Abstract: A supporting glass substrate includes a compression stress layer on a surface thereof, and has an average thermal expansion coefficient at 50° C. to 200° C. that is 7 ppm/° C. to 15 ppm/° C., an internal tensile stress that is 5 MPa to 55 MPa, and a depth of the compression stress layer that is 10 ?m to 60 ?m.

Abstract: The present invention provides a molding precursor for a fiber-reinforced polyimide resin molded article, which is formed by impregnating a functional fiber with an addition-reaction type polyimide resin. The molding precursor has a melt viscosity in the range of 300 to 3200 kPa·s under conditions of keeping for 1 to 10 minutes at a temperature 5 to 20° C. lower than the thickening-start temperature so as to effectively prevent a fiber-reinforced polyimide resin molded article from warping. The present invention provides also a method for producing the molding precursor.

Abstract: An insulating member includes a fixed charge. The insulating member includes a first insulating part. The first insulating part includes a first region, a second region, and a third region. The first region is positioned between a gate electrode and the second region in a first direction. The second region is positioned between the first region and the third region in the first direction. The third region is positioned between the second region and a second surface in the first direction. A density of the fixed charge is greater in the first region than in the second region.

Abstract: A pharmaceutical composition for adsorbing a disease-causing substance by oral administration, the pharmaceutical composition including two-dimensional particles having one or plural layers, the one or plural layers having a layer body represented by: MmXn, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, m is more than n but not more than 5, and a modifier or terminal T exists on a surface of the layer body, wherein Tis at least one selected from a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom.

Abstract: An adsorbent material used for adsorbing a disease-causing substance, the adsorbent material including two-dimensional particles having one or plural layers, the one or plural layers containing a layer body represented by: MmXn, wherein M is at least one metal of Group 3, 4, 5, 6, or 7, X is a carbon atom, a nitrogen atom, or a combination thereof, n is not less than 1 and not more than 4, m is more than n but not more than 5, and a modifier or terminal T exists on a surface of the layer body, wherein T is at least one selected from a hydroxyl group, a fluorine atom, a chlorine atom, an oxygen atom, and a hydrogen atom.

Abstract: A charging processing device according to the present disclosure includes an acquisition means for acquiring primary sequence data of amino acids constituting a protein, a prediction means for predicting a three-dimensional structure of the protein based on the primary sequence data, an output means for outputting a moving image in a mode in which the three-dimensional structure is graspable, a purchase reception means for receiving a purchase of prediction result data for the three-dimensional structure from a customer, and a charging means for executing charging processing with respect to the customer when the purchase is received.

Abstract: A management method includes determining, by a management apparatus, a stopping location for a vehicle used for delivery, based on vehicle classification data on the vehicle, delivery environment information, and stopping environment information during the delivery.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type including a first portion and a second portion, a second semiconductor layer of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, a gate electrode located between the second semiconductor region and the fourth semiconductor region and between the third semiconductor region and the fourth semiconductor region in a second direction, a first insulating region, a third electrode, and a second insulating region.

Abstract: At a front surface of a silicon carbide base, an n?-type drift layer, a p-type base layer, a first n+-type source region, a second n+-type source region, and a trench that penetrates the first and the second n+-type source regions and the p-type base layer and reaches the n-type region are provided. In the trench, the gate electrode is provided via a gate insulating film, an interlayer insulating film is provided in the trench on the gate electrode.

Abstract: A game system, that creates an object group with which a plurality of objects is associated, has: a computer that causes candidate object information, which indicates candidate objects to be associated with the object group, to be displayed on a screen; the computer that performs change processing including at least one of a selection change of associating a selected object selected from the candidate objects with the object group, or a cancellation change of cancelling association between the selected object and the object group; the computer that saves change information indicating that the change processing has been performed in association with object identification information for identifying a change object that has become a target of the change processing; and the computer that causes change object information indicating the change object to be displayed in a different mode from the candidate object information with reference to the change information.