Abstract: An imaging device capable of image processing is provided. The imaging device can retain analog data (image data) obtained by an image-capturing operation in a pixel and perform a product-sum operation of the analog data and a predetermined weight coefficient in the pixel to convert the data into binary data. When the binary data is taken in a neural network or the like, processing such as image recognition can be performed. Since enormous volumes of image data can be retained in pixels in the state of analog data, processing can be performed efficiently.

Abstract: An ultrasonic probe of an embodiment includes a transmission and reception unit, a movable unit, a pressure signal detection unit, and an amplification unit. The transmission and reception unit includes a plurality of transducers, transmits transmission acoustic signals generated by the transducers, and receives reflection acoustic signals of the transmitted acoustic signals. The movable unit includes an acoustic radiation surface provided on a surface of the transmission and reception unit and moves due to a pressure applied to the acoustic radiation surface pressed against an object. The pressure signal detection unit detects a pressure signal corresponding to an amount of movement of the movable unit. The amplification unit amplifies the amount of movement of the movable unit.

Abstract: A method of manufacturing a cobalt-nickel-containing solution including: preparing a crude nickel hydroxide and/or a crude cobalt hydroxide as a starting material, the crude nickel or cobalt hydroxide containing cobalt and nickel and elements except the cobalt and nickel as impurities, the crude nickel hydroxide containing the nickel more than the cobalt, and the crude cobalt hydroxide containing the cobalt more than the nickel; a water-washing process for obtaining a post-water-washing crude hydroxide from the starting material; a leaching process for obtaining a post-leaching solution from the post-water-washing crude hydroxide; a neutralization process of subjecting the post-leaching solution to neutralization and solid-liquid-separation to remove the impurities as a post-neutralization residue containing one or more of iron, silicon, aluminum, and chromium, thereby obtaining a post-neutralization solution; and an extraction process of subjecting the post-neutralization solution to solvent extraction to ob

Abstract: Provided is a non-combustion heating-type flavor inhalation product which comprises chip paper that joins a cigarette rod and an adjacent member adjacent thereto. The MD direction of the chip paper is substantially parallel to the longitudinal direction of the non-combustion heating-type flavor inhalation product.

Abstract: An inspection system for a welded portion in welding includes a display unit, an acquisition unit that acquires a reference position of a welded portion stored in the storage device, a display control unit that displays, on the display unit, a reference position image that is an image showing a reference position virtually superimposed on an image of an object to be welded in a real space captured by the imaging device and includes a welded portion, and a distance calculation unit that calculates a distance in the real space between the welded portion in the real space displayed on the display unit and the reference position of the welded portion.

Abstract: A photoelectric conversion device includes a pixel including a photoelectric conversion unit configured to generate charge by photoelectric conversion, a floating diffusion configured to hold charge transferred from the photoelectric conversion unit, and an output unit configured to output a signal corresponding to an amount of charge held in the floating diffusion, the pixel being enabled to switch a capacitance value of the floating diffusion, and a control unit configured to switch the capacitance value of the floating diffusion. The control unit is configured to set the floating diffusion to a first capacitance value when an absolute value of a power supply voltage supplied to the output unit is a first voltage and set the floating diffusion to a second capacitance value larger than the first capacitance value when the absolute value of the power supply voltage is a second voltage lower than the first voltage.

Abstract: A wrapper for a non-combustion-heated flavor inhalation article comprising a base paper that has a basis weight of at least 40 g/m2 and contains not more than 10 wt % of a filler.

Abstract: There is provided a vehicle glass that appropriately transmits far-infrared rays and has shock resistance. A vehicle glass (1) includes a glass member (10) in which an opening (19) penetrating the glass member (10) from a surface on a vehicle exterior side to a surface on a vehicle interior side is formed and a transmissive member (20) that is disposed in the opening (19), and has an average internal transmittance of 50% or more for light having a wavelength of 8 ?m to 13 ?m. A ratio Sa/Sb of fracture velocity Sa [km/h] measured on a surface on the vehicle of the transmissive member (20) by a chart stone chipping test and fracture velocity Sb [km/h] measured on the surface on the vehicle exterior side of the glass member (10) is 0.7 or more.

Abstract: Carbon-coated non-graphitizable carbon used for a negative electrode for a lithium-ion secondary battery, a negative electrode for a lithium-ion secondary battery using the carbon-coated non-graphitizable carbon, and a lithium-ion secondary battery including the negative electrode for a lithium-ion secondary battery are disclosed. The carbon-coated non-graphitizable carbon is carbon-coated non-graphitizable carbon comprising: non-graphitizable carbon; and a carbon coating layer provided on a surface of the non-graphitizable carbon, wherein an average thickness of the carbon coating layer is 4 nm or more and 30 nm or less, and a minimum value of a thickness of the carbon coating layer is 70% or more of a maximum value of the carbon coating layer.

Abstract: According to one embodiment, a semiconductor device includes first to fourth electrodes, a semiconductor member, and an insulating member. The semiconductor member includes first to sixth semiconductor regions. The third semiconductor region includes first and second partial regions. A part of the fourth semiconductor region is between the second partial and second semiconductor regions. The fifth semiconductor region is between the second partial region and a part of the fourth semiconductor region. The sixth semiconductor region is between the first electrode and the first semiconductor region. The second electrode is electrically connected to the second semiconductor region. The fourth electrode is between the first partial region and the third electrode. A part of the insulating member is provided between the semiconductor member and the third electrode, between the semiconductor member and the fourth electrode, and between the third and fourth electrodes.

Abstract: A filter circuit includes: a magnetic material core having a hollow hole through which a conductor line can be inserted; a wound wire wound around the magnetic material core through the hollow hole of the magnetic material core; and a variable impedance unit that is connected with the wound wire, and has impedance that is variable depending on a current or a voltage induced from the conductor line to the wound wire.

Abstract: An imaging device includes a first chip. The first chip includes a first pixel and a second pixel. The first pixel includes a first anode region and a first cathode region, and the second pixel includes a second anode region and a second cathode region. The first chip includes a first wiring layer. The first wiring layer includes a first anode electrode, a first anode via coupled to the first anode electrode and the first anode region, and a second anode via coupled to the first anode electrode and the second anode region.

Abstract: A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror, a first semiconductor layer having a first conductivity type, a light-emitting layer, a second semiconductor layer having a second conductivity type opposite of the first conductivity type, and having an upper surface with a projection, an insulating layer that covers the upper surface of the second semiconductor layer and has an opening that exposes the second semiconductor layer on the upper surface of the projection terminated on the upper surface of the projection of the second semiconductor layer, a transmissive electrode layer that covers the upper surface of the second semiconductor layer exposed from the opening of the insulating layer and is formed on the insulating layer, and a second multilayer film reflecting mirror formed on the transmissive electrode layer and constituting a resonator together with the first multilayer film reflecting mirror.

Abstract: Provided is a smoothing-target-value calculation device that is capable of calculating a smoothing target value with which it is possible to suppress battery degradation. The present invention provides a smoothing-target-value calculation device that calculates a smoothing target value, which is a target value for the sum of first power generated by a renewable-energy power generation system and second power charged into and discharged from a battery, the smoothing-target-value calculation device including: a predicted-value acquisition unit that acquires a predicted value for the first power; a predicted-value correction unit that corrects the predicted value; and a smoothing-target-value calculation unit that calculates a smoothing target value by smoothing the corrected predicted value.

Abstract: A printing apparatus includes a conveying unit which conveys a printing medium in a conveying direction; a printing unit which prints an image on the printing medium conveyed by the conveying unit; a processing unit which includes a processing member and which executes a processing action for processing the printing medium by moving the processing member while causing the processing member to contact the printing medium; and a controller. The controller executes a processing process for causing the processing unit to execute the processing action with respect to the printing medium by moving the processing unit from a first position to a second position in an intersecting direction; a first conveying process for causing the conveying unit to convey a processed printing medium in the conveying direction; and a first moving process for moving the processing unit from the second position to the first position after the first conveying process.

Abstract: A semiconductor device includes a major element including a first semiconductor region, a first electrode, a second electrode, a first gate electrode, and a first insulating member being positioned between the first gate electrode and the first semiconductor region, a gate driver supplying the gate voltage to the first gate electrode, and a recording element electrically connected with the gate driver. The recording element records, as continuously changing analog data, a number of times that the gate voltage is supplied to the first gate electrode while being enough to switch the major element on.

Abstract: The major element includes a first electrode, a second electrode, a first semiconductor layer located between the first electrode and the second electrode, the first semiconductor layer forming a first Schottky junction with the second electrode, and a first gate electrode facing the first Schottky junction. The control element includes a third electrode, a fourth electrode, a second semiconductor layer located between the third electrode and the fourth electrode, the second semiconductor layer forming a second Schottky junction with the fourth electrode, and a second gate electrode facing the second Schottky junction.

Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.

Abstract: An information processing system includes: a measuring device that measures advanced glycation end products (AGEs) of a user and is provided with identification information of a supporter who supports the user; and a server device that communicates with the measuring device and a supporter terminal of the supporter. The measuring device outputs a measurement result of the AGEs in association with the identification information to the server device. The server device stores the measurement result in association with the identification information and outputs information about the measurement result to the supporter terminal.

Abstract: A semiconductor device includes a first conductive part, a second conductive part, a third conductive part, a first insulating part, and a semiconductor part of a first conductivity type. The second conductive part is separated from the first conductive part in a first direction. The third conductive part arranged with a portion of the second conductive part in a second direction crossing the first direction. The first insulating part includes a first insulating region located between the third conductive part and the portion of the second conductive part. The semiconductor part includes a first semiconductor region and a second semiconductor region. The first semiconductor region is located between the first conductive part and the second conductive part. The second semiconductor region is located between the first insulating region and the portion of the second conductive part. The second semiconductor region has a Schottky junction with the second conductive part.