Abstract: A semiconductor storage device includes conductive layers and inter-layer insulating layers alternately arranged over a substrate having a first region and a second region arranged in a first direction; and a first structure provided in a second region of the substrate. The first structure includes: a plurality of third regions provided at first positions corresponding to at least some of the plurality of conductive layers, respectively, and a plurality of fourth regions provided at second positions corresponding to at least some of the plurality of inter-layer insulating layers, respectively. A first width of the plurality of third regions in the first direction is greater than a second width of the plurality of fourth regions in the first direction.

Abstract: A semiconductor device of an embodiment includes: a semiconductor layer having a first face and a second face, the semiconductor layer including a first trench and a second trench on a side of a first face; a first electrode on the side of the first face; a second electrode on the side of the second face; a first gate electrode in the first trench; a first field plate electrode electrically connected to the first electrode in the first trench, a second gate electrode in the second trench; and a second field plate electrode electrically connected to the first electrode in the second trench, a resistance between first electrode and second field plate is different from a resistance between first electrode and the first field plate electrode.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type including a first portion and a second portion, a second semiconductor layer of a second conductivity type, a third semiconductor region of the first conductivity type, a fourth semiconductor region of the second conductivity type, a gate electrode located between the second semiconductor region and the fourth semiconductor region and between the third semiconductor region and the fourth semiconductor region in a second direction, a first insulating region, a third electrode, and a second insulating region.

Abstract: A semiconductor device includes a first electrode, a second electrode, a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, a third semiconductor region of a first conductivity type, a fourth semiconductor region of a second conductivity type, a third electrode connected to the second electrode and the fourth semiconductor region, a first insulating region, a gate electrode, and a second insulating region.

Abstract: A semiconductor storage device includes a first wiring, a second wiring, an insulating portion, and a resistance changing film. The first wiring extends in a first direction. The second wiring extends in a second direction intersecting the first direction, and is provided at a location different from that of the first wiring in a third direction intersecting the first direction and the second direction. The insulating portion is provided between the first wiring and the second wiring in the third direction. The resistance changing film is provided between the first wiring and the second wiring in the third direction, is adjacent to the insulating film from a first side and a second side which is opposite to the first side in the first direction, and the resistance changing film being smaller than the second wiring in the first direction.

Abstract: In a pressure-sensitive touch sensor of a capacitance type, a first electrode and a second electrode are provided on a first surface of a base material sheet. The base material sheet is folded between the first electrode and the second electrode so that a surface of the first electrode and a surface of the second electrode face each other. The base material sheet is folded at a fold line portion in which a slit is formed. An elastic layer is provided between folded parts of the base material sheet. The pressure-sensitive touch sensor is configured to detect pressing on the operation surface based on a change in capacitance, which is caused when the elastic layer is compressed and deformed in a thickness direction by a pressing force to reduce a distance between the first electrode and the second electrode.

Abstract: The control apparatus includes a controller configured to acquire time slot data indicating an available time slot at a place that provides a service, and generate announcement data announcing a proposal to take a user to the place using a vehicle should the user reserve the time slot indicated by the time slot data, and a communication interface configured to transmit the announcement data generated by the controller to a terminal apparatus configured to present content of data to the user.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a first conductive member, a semiconductor member, and a first insulating member. The third electrode includes a third electrode end portion and a third electrode other end portion. The third electrode end portion is between the first electrode and the third electrode other end portion. The first conductive member includes a first conductive member end portion and a first conductive member other end portion. The first conductive member end portion is between the first electrode and the first conductive member other end portion. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first insulating member includes silicon and oxygen. The first insulating member includes a first element including at least one selected from the group consisting of nitrogen, aluminum, hafnium and zirconium at the third position.

Abstract: A transparent substrate having an antiglare function includes first and second faces. The transparent substrate has a resolution index value T, a reflected image diffusivity index value R, and a sparkle index value S satisfying T?0.25, R?0.8, and 0.75?S?0.95, respectively. The resolution index value T is calculated as (luminance of zero-degrees transmission light)/(luminance of total transmission light). The reflected image diffusivity index value R is calculated as (R2+R3)/(2×R1), where R1 denotes a luminance of reflected light reflected at first angle ?1, and R2, R3 denote luminance of reflected light at the second angle ?2, the third angle ?3, respectively, with respect to the first angle ?1. The sparkle index value S is calculated as 1?(Sa/Ss), where the first sparkle Sa and the second sparkle Ss denote a sparkle value of the transparent substrate and a sparkle value of a glass substrate, respectively.

Abstract: A semiconductor device includes a first electrode, a second electrode, a semiconductor layer that includes a first semiconductor region, a second semiconductor region, and a third semiconductor region, a third electrode, a first insulating region, a second insulating region, a fourth electrode that has a plurality of portions consecutive in a first direction, the plurality of portions including a first portion that has a first width in a second direction, a second portion that is located closer to the second electrode than the first portion in the first direction and has a second width smaller than the first width in the second direction, and a third portion that is adjacent to the second portion, located closer to the second electrode than the second portion in the first direction, and has a third width larger than the second width in the second direction, and a third insulating region.

Abstract: According to one embodiment, a semiconductor device includes first, second, third semiconductor members, a first conductive member, a connection member, and an insulating member. The first electrode includes first, second, and third electrode regions. A direction from the first toward second electrode is along a first direction. The second electrode includes fourth, fifth, and sixth electrode regions. The first semiconductor member includes first, second, third, fourth, and fifth partial regions. The second semiconductor member includes first and second semiconductor regions. The third semiconductor member includes third and fourth semiconductor regions. The third electrode is provided between the third partial region and the sixth electrode region in the first direction. The connection member is electrically connected to the first conductive member and the second electrode. The insulating member includes first, second, third, fourth, and fifth portions.

Abstract: A controller of an information processing apparatus is configured to select at least one store as a recommended store from among a plurality of stores located in a vicinity of a stopped vehicle based on a road configuration in the vicinity of the vehicle, and notify the vehicle of information regarding the selected recommended store via a communication interface.

Abstract: A puncture adapter of an embodiment holds a puncture needle and is attached to an ultrasonic probe having an ultrasonic probe group. The puncture adapter has a puncture bracket that can be fixed to the ultrasonic probe and a puncture needle guide that is attached to the puncture bracket. The puncture bracket is not fixed to the ultrasonic probe when the puncture needle guide is not attached. The puncture bracket is fixed to the ultrasonic probe when the puncture needle guide is attached.

Abstract: According to one embodiment, a semiconductor device includes first, second, and third conductive members, a semiconductor member, and a first insulating member. The semiconductor member includes a first semiconductor region provided on the first conductive member, a second semiconductor region provided on a portion of the first semiconductor region, and a third semiconductor region provided on the second semiconductor region. An impurity concentration in the third semiconductor region is greater than in the first semiconductor region. The second conductive member includes a first conductive portion electrically connected to the second and third semiconductor regions. The third conductive member is provided on an other portion of the first semiconductor region. At least a portion of the first insulating member is between the semiconductor member and the third conductive member.

Abstract: A controller of an information processing apparatus is configured to, upon acquiring movement information on a vehicle parked in a parking lot, determine whether there is order information for a product or service ordered by a user of the vehicle, and in a case in which there is order information for the product or service, notify, via a communication interface, a provider of the product or service of cancellation information for the product or service.

Abstract: A vehicle mirror device includes a mirror housing attached to a vehicle and a mirror that is held by the mirror housing and transmits light from inside of the mirror housing while reflecting light from outside of the mirror housing. The mirror housing accommodates therein a light source, a reflector having a reflective surface that reflects light of the light source, and a mask having a light transmitting part through which the light from the light source reflected by the reflector is projected. The light source and the reflector are arranged so that the light is projected toward the light transmitting part of the mask by one time of reflection, and the reflector is arranged so that the reflected light is projected at an angle with respect to a normal line of a reflective surface of the mirror.

Abstract: A controller of an information processing apparatus is configured to acquire information indicating a loudness of sound emitted by a second vehicle parked within a predetermined range from a first vehicle or a vehicle height of the second vehicle, and in a case in which the controller determines that the loudness or the vehicle height exceeds a predetermined first threshold, the controller provides a predetermined notification to the first vehicle via a communication interface.

Abstract: The glass article has a three-dimensional shape. The glass article contains a first surface and at least one second surface opposite to the first surface, and contains a bent part in at least one place of the first surface or the second surface.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a semiconductor member, a first conductive member, and an insulating part region. The second electrode includes a first electrode portion. The semiconductor member includes a first semiconductor region. The first semiconductor region includes first to third partial regions. The first partial region is between the first electrode and the first electrode portion. The second partial region is between the first and third electrodes. The third partial region is between the first partial region and the first electrode portion. The third partial region includes first and second positions. The second position is between the first partial region and the first position. The first conductive member includes first and second portions. The first portion is between the second partial region and the third electrode. The insulating part region includes first and second insulating regions.

Abstract: According to one embodiment, a semiconductor device includes first to third electrodes, a conductive member, a semiconductor member, and an insulating member. The conductive member includes a conductive member end portion and a conductive member other-end portion. The conductive member end portion is between the first electrode and the conductive member other-end portion. The conductive member is electrically connected with one of the second electrode or the third electrode. The semiconductor member includes first to third semiconductor regions. The first semiconductor region includes first and second partial regions. The first partial region is between the first and second electrodes. The second semiconductor region is between the first partial region and the third semiconductor region. The third semiconductor region is electrically connected with the second electrode.