Abstract: A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface and test metal patterns which are formed on the streets, comprising: a metal pattern breaking step for forming a break line in the test metal patterns by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position near the test metal patterns; a deteriorated layer forming step for forming a deteriorated layer along the streets above the break lines in the inside of the wafer by applying a pulse laser beam having permeability to the wafer to the rear surface of the wafer with its focal point set to a position above the break lines in the inside of the wafer; and a dividing step for dividing the wafer into individual chips along the deteriorated layers of the wafer by exerting external force to the wafer having the deteriorated layers formed therein.

Abstract: A method of dividing a wafer having a plurality of devices, which are formed in a plurality of areas sectioned by streets formed in a lattice pattern on the front surface, and having test metal patterns which are formed on the streets, comprising the steps of: a laser beam application step for carrying out laser processing to form a dividing start point along a street on both sides of the test metal patterns by applying a laser beam along the street on both sides of the test metal patterns in the street formed on the wafer; and a dividing step for dividing the wafer which has been laser processed to form dividing start points along the dividing start points by exerting external force to the wafer, resulting in leaving the streets having the test metal patterns formed thereon behind.

Abstract: A method which can divide a semiconductor wafer sufficiently precisely along a street by use of a laser beam, while fully avoiding or suppressing contamination of circuits formed in rectangular regions on the face of the semiconductor water, and without causing chipping to the rectangular regions on the face. A laser beam is applied from beside one of the back and the face of a semiconductor substrate and focused onto the other of the back and the face of the semiconductor substrate, or the vicinity thereof, to partially deteriorate at least a zone ranging from the other of the back and the face of the semiconductor substrate to a predetermined depth.

Abstract: A wafer processing method for dividing a wafer having optical devices that are formed in a plurality of areas sectioned by dividing lines formed in a lattice pattern on the front surface, along the dividing lines, comprising a laser beam application step of applying a laser beam capable of passing through the wafer along the dividing lines to form deteriorated layers having a predetermined depth from the back surface of the wafer; a protective sheet affixing step of affixing a protective sheet to the front surface of the wafer having the deteriorated layers formed therein; a dividing step of dividing the wafer having the protective sheet affixed to the front surface along the deteriorated layers; and a grinding step of grinding the back surface of the wafer divided along the deteriorated layers in a state of the protective sheet being affixed to the wafer, to remove the deteriorated layers.

Abstract: A wafer processing method for dividing a wafer having optical devices that are formed in a plurality of areas sectioned by dividing lines formed in a lattice pattern on the front surface, along the dividing lines, which comprises a laser beam application step of applying a laser beam to the wafer along the dividing lines from the side of the back surface thereof to form grooves having a predetermined depth in the back surface; a protective sheet affixing step of affixing a protective sheet to the front surface of the wafer having the grooves in the back surface; a dividing step of dividing the wafer having the protective sheet affixed to the front surface along the grooves; and a grinding step of grinding the back surface of the wafer divided along the grooves in a state of the protective sheet being affixed to the wafer, to remove the grooves.

Abstract: A tape expansion apparatus for expanding a holding tape, which is mounted on an annular frame and to which a wafer having a plurality of areas sectioned by a plurality of dividing lines is affixed, comprising a frame holding means for holding the annular frame; a plurality of tape holding means for nipping an area between the inner periphery of the annular frame and the wafer of the holding tape mounted on the annular frame held on the frame holding means; and a tape expansion means for moving the plurality of tape holding means in radial directions.

Abstract: A method of dividing a wafer whose strength is reduced along a plurality of dividing lines formed on the front surface in a lattice pattern, along the dividing lines, comprising: a tape affixing step for affixing a protective tape to one surface side of the wafer; a holding step for positioning a first suction-holding member and a second suction-holding member on both sides of a dividing line and suction-holding the wafer on the first suction-holding member and the second suction-holding member through the protective tape; and a dividing step for moving the first suction-holding member and the second suction-holding member in a direction for separating them from each other to exert tensile force in a direction perpendicular to the dividing line.

Abstract: A wafer dividing apparatus for dividing along dividing lines a wafer whose strength is reduced, along the dividing lines, comprising a tape holding means for holding a protective tape affixed to one surface side of the wafer; and a wafer dividing means comprising a first suction-holding member and a second suction-holding member, both having a holding surface for suction-holding the wafer held on the tape holding means through the protective tape on both sides of a dividing line through the protective tape, and a moving means for moving the first suction-holding member and the second suction-holding member in directions that they separate from each other, wherein the holding surface of the first suction-holding member and the holding surface of the second suction-holding member are inclined such that they descend or ascend toward their side edges that are opposed to each other.

Abstract: A laser beam processing method for forming deteriorated layers along a dividing line in the inside of a workpiece by applying a pulse laser beam of a wavelength capable of passing through the workpiece along the dividing line formed on the workpiece, wherein a plurality of pulse laser beams are applied with a predetermined space therebetween in the width direction of the dividing line to form a plurality of parallel deteriorated layers along the dividing line.

Abstract: A wafer dividing apparatus for dividing a wafer whose strength is reduced along a plurality of dividing lines, along the dividing lines, which comprises a tape holding means for holding a protective tape affixed to one side of the wafer; and wafer dividing means, each comprising a plurality of tension application means comprising a first suction-holding member and a second suction-holding member for suction-holding the wafer held on the tape holding means through the protective tape on both sides of a dividing line, and moving means for moving the first suction-holding members and the second suction-holding members in such directions that they separate from each other.

Abstract: A method of dividing a wafer having a plurality of dividing lines formed in a lattice pattern on the front surface, into individual chips along the dividing lines, the method comprising: a deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines; a wafer supporting step for putting one surface side of the wafer on a support tape which is mounted on an annular frame and shrinks by an external stimulus; a wafer-dividing step for dividing the wafer along the dividing lines where the deteriorated layer has been formed by exerting external force to the wafer which has been put on the support tape; and a chip spacing formation step for shrinking the shrink area between the inner periphery of the annular frame and the area, to which the wafer is affixed, in the support tape affixed to the divided wafer, by exerting an external stimulus to the shrink area.

Abstract: A silicon wafer laser processing method for forming a deteriorated layer along dividing lines formed on a silicon wafer in the inside of the silicon wafer by applying a laser beam along the dividing lines, wherein the wavelength of the laser beam is set to 1,100 to 2,000 nm.

Abstract: A method of dividing a wafer having a plurality of dividing lines formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of dividing lines into individual chips, along the dividing lines, the method comprising the steps of forming a deteriorated layer by applying a laser beam capable of passing through the wafer along the dividing lines; expanding the support tape affixed to the wafer to divide the wafer into individual chips along the dividing lines where the deteriorated layer has been formed and to form a space between adjacent chips; and applying an external stimulus to an area, to which the wafer is affixed, of the support tape in the above state to cure the adhesive layer to maintain the space between adjacent chips.

Abstract: A method of dividing an adhesive film mounted on the back surface of a wafer having a plurality of streets formed on the front surface in a lattice pattern and function elements formed in a plurality of areas sectioned by the plurality of streets, along the streets in a state where the wafer is put on the surface of a protective tape mounted on an annular frame, wherein the adhesive film is cooled and the protective tape is expanded to divide the adhesive film along the peripheries of the function elements.

Abstract: A method of dividing a wafer whose strength is reduced along a plurality of dividing lines formed on the front surface in a lattice pattern, along the dividing lines, comprising: a tape affixing step for affixing a protective tape to one surface side of the wafer; a holding step for positioning a first suction-holding member and a second suction-holding member on both sides of a dividing line and suction-holding the wafer on the first suction-holding member and the second suction-holding member through the protective tape; and a dividing step for moving the first suction-holding member and the second suction-holding member in a direction for separating them from each other to exert tensile force in a direction perpendicular to the dividing line.

Abstract: A wafer processing method of dividing a wafer having function elements formed in areas sectioned by dividing lines formed on the front surface in a lattice pattern, into individual chips along the dividing lines, which comprises a deteriorated layer forming step for forming a deteriorated layer in the inside of the wafer along the dividing lines; a wafer supporting step for putting the back surface of the wafer on an extensible support tape mounted on an annular frame; and a dividing step for dividing the wafer along the dividing lines by expanding the support tape affixed to the wafer, wherein the dividing step comprises first dividing the wafer along dividing lines extending in a predetermined direction and subsequently, along dividing lines extending in a direction intersecting with the predetermined direction by expanding the support tape such that tensile force acting in a direction perpendicular to the dividing lines extending in the predetermined direction becomes larger than tensile force acting in a

Abstract: A wafer processing method for dividing a wafer having function elements in area sectioned by dividing lines formed on the front surface in a lattice pattern into individual chips along the dividing lines, comprising a deteriorated layer forming step for forming a deteriorated layer on the side of the back surface of a position at a distance corresponding to the final thickness of the chip from the front surface of the wafer by applying a laser beam capable of passing through the wafer along the dividing lines from the back surface of the wafer; a dividing step for dividing the wafer into individual chips along the dividing lines by applying external force to the wafer in which the deteriorated layer has been formed along the dividing lines; and a back surface grinding step for grinding the back surface of the wafer divided into individual chips to the final thickness of the chip.

Abstract: In a multi function printer, an upper limit of printable sheets is set for each user requesting a print job. The multi function printer includes a settings change instructing section for making an inquiry to a manager terminal whether to authorize changing the upper limit as requested by a user, and an authorization confirming section for confirming a reply to the inquiry, and changing the upper limit if the manager terminal authorizes the change. This reduces the cost of print job, and enables a print job to be efficiently carried out by changing print restrictions as required by the print job.

Abstract: An upper limit of allowed print count is set for each user requesting print jobs, and a multi function printer includes: (i) a schedule transmission requesting section for acquiring schedule information of the user; (ii) a print count predicting section for predicting, on the basis of the acquired schedule information, allowed print count assigned to the user, and the number of printed sheets, whether changing the upper limit of the allowed print count is required; and (iii) a settings change inquiry section for inquiring a manager terminal of whether the manager terminal authorizes changing the upper limit of the allowed print count. If having obtained from the manager terminal authorization of change of the upper limit of the allowed print count, the multi function printer performs a print job within a range of a new allowed print count.

Abstract: A method of dividing a wafer having a plurality of first dividing lines and a plurality of second dividing lines intersecting with the first dividing lines formed on the surface of the wafer along the first dividing lines and the second dividing lines, which comprises an internal deteriorated layer forming step for forming a deteriorated layer in the inside of the water along the first dividing lines and the second dividing lines by applying a laser beam along the first dividing lines and the second dividing lines; an intersection deteriorated layer forming step for forming a deteriorated layer thicker than the deteriorated layer formed in the internal deteriorated layer forming step by applying a laser beam to intersection areas between the first dividing lines and the second dividing lines; and a dividing step for dividing the wafer into individual chips along the first dividing lines and the second dividing lines by exerting external force to the wafer.