Patents by Inventor Yusuke Nonaka

Yusuke Nonaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11217701
    Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
    Type: Grant
    Filed: March 9, 2020
    Date of Patent: January 4, 2022
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tatsuya Honda, Masashi Tsubuku, Yusuke Nonaka, Takashi Shimazu, Shunpei Yamazaki
  • Patent number: 11211467
    Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first insulator; a first oxide provided over the first insulator; a second oxide provided over the first oxide; a first conductor and a second conductor provided apart from each other over the second oxide; a third oxide provided over the second oxide, the first conductor, and the second conductor; a second insulating film provided over the third oxide; and a third conductor provided over the second oxide with the third oxide and the second insulating film positioned therebetween. The third oxide contains a metal element and nitrogen, and the metal element is bonded to nitrogen.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: December 28, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Tomoki Hiramatsu, Yusuke Nonaka, Noritaka Ishihara, Shota Sambonsuge, Yasumasa Yamane, Yuta Endo
  • Publication number: 20210391554
    Abstract: Provided is a light-emitting element which includes a first electrode, a second electrode over the first electrode, and first and second light-emitting layers therebetween. The first light-emitting layer contains a first host material and a first light-emitting material, and the second light-emitting layer contains a second host material and a second light-emitting material. The first light-emitting material is a fluorescent material, and the second light-emitting material is a phosphorescent material. The level of the lowest triplet excited state (T1 level) of the first light-emitting material is higher than the T1 level of the first host material. A light-emitting device, an electronic device, and a lighting device including the light-emitting element are further provided.
    Type: Application
    Filed: August 23, 2021
    Publication date: December 16, 2021
    Inventors: Takahiro ISHISONE, Satoshi SEO, Yusuke NONAKA, Nobuharu OHSAWA
  • Patent number: 11195758
    Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided. The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.
    Type: Grant
    Filed: August 28, 2018
    Date of Patent: December 7, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Toshihiko Takeuchi, Tsutomu Murakawa, Hiroki Komagata, Daisuke Matsubayashi, Noritaka Ishihara, Yusuke Nonaka
  • Patent number: 11158832
    Abstract: Provided is a light-emitting element which includes a first electrode, a second electrode over the first electrode, and first and second light-emitting layers therebetween. The first light-emitting layer contains a first host material and a first light-emitting material, and the second light-emitting layer contains a second host material and a second light-emitting material. The first light-emitting material is a fluorescent material, and the second light-emitting material is a phosphorescent material. The level of the lowest triplet excited state (T1 level) of the first light-emitting material is higher than the T1 level of the first host material. A light-emitting device, an electronic device, and a lighting device including the light-emitting element are further provided.
    Type: Grant
    Filed: May 20, 2020
    Date of Patent: October 26, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Ishisone, Satoshi Seo, Yusuke Nonaka, Nobuharu Ohsawa
  • Publication number: 20210327968
    Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.
    Type: Application
    Filed: June 24, 2021
    Publication date: October 21, 2021
    Inventors: Takahiro ISHISONE, Satoshi SEO, Yusuke NONAKA, Nobuharu OHSAWA
  • Patent number: 11152513
    Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator.
    Type: Grant
    Filed: August 24, 2018
    Date of Patent: October 19, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Yoshinobu Asami, Takahisa Ishiyama, Motomu Kurata, Ryo Tokumaru, Noritaka Ishihara, Yusuke Nonaka
  • Patent number: 11114571
    Abstract: A semiconductor device includes: a semiconductor substrate having a diode formation region; an upper diffusion region of a first conductivity type provided on a surface layer of a main surface of the semiconductor substrate in the diode formation region; and a lower diffusion region of a second conductivity type provided at a position deeper than the upper diffusion region with respect to the main surface in a depth direction of the semiconductor substrate, the lower diffusion region having a higher impurity concentration as compared to the semiconductor substrate. The lower diffusion region provides a PN joint surface with the upper diffusion region at a position deeper than the main surface, and has a maximum point indicating a maximum concentration in an impurity concentration profile of the lower diffusion region in the diode formation region.
    Type: Grant
    Filed: March 28, 2019
    Date of Patent: September 7, 2021
    Assignee: DENSO CORPORATION
    Inventors: Shinichirou Yanagi, Yusuke Nonaka, Seiji Noma, Shinya Sakurai, Shogo Ikeura, Atsushi Kasahara, Shin Takizawa
  • Publication number: 20210257498
    Abstract: A semiconductor device includes a gate electrode, a gate insulating film which includes oxidized material containing silicon and covers the gate electrode, an oxide semiconductor film provided to be in contact with the gate insulating film and overlap with at least the gate electrode, and a source electrode and a drain electrode electrically connected to the oxide semiconductor film. In the oxide semiconductor film, a first region which is provided to be in contact with the gate insulating film and have a thickness less than or equal to 5 nm has a silicon concentration lower than or equal to 1.0 at. %, and a region in the oxide semiconductor film other than the first region has lower silicon concentration than the first region. At least the first region includes a crystal portion.
    Type: Application
    Filed: April 13, 2021
    Publication date: August 19, 2021
    Inventors: Tatsuya HONDA, Masashi TSUBUKU, Yusuke NONAKA, Takashi SHIMAZU, Shunpei YAMAZAKI
  • Publication number: 20210242342
    Abstract: The body region is formed between the plurality of trench gate structures, and the first impurity region is formed in a surface portion of the body region. The body region includes a second conductive type contact region having an impurity concentration of the second conductive type higher than the body region and contacting the upper electrode. The first impurity region includes a first conductive type contact region having the impurity concentration of the first conductive type impurity higher than the first impurity region and contacting the upper electrode. A second conductive type contact region is formed in a part of the body region where the first impurity region is not formed without forming the first conductive type contact region therein, and a contact trench is formed in the first impurity region. The first conductive type contact region is formed in the contact trench.
    Type: Application
    Filed: April 22, 2021
    Publication date: August 5, 2021
    Inventors: KENTA GODA, YOUHEI ODA, YUSUKE NONAKA
  • Patent number: 11049908
    Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: June 29, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Takahiro Ishisone, Satoshi Seo, Yusuke Nonaka, Nobuharu Ohsawa
  • Publication number: 20210193945
    Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.
    Type: Application
    Filed: February 18, 2021
    Publication date: June 24, 2021
    Inventors: Nobuharu OHSAWA, Yusuke NONAKA, Takahiro ISHISONE, Satoshi SEO, Takuya KAWATA
  • Publication number: 20210159345
    Abstract: An oxide semiconductor film which has more stable electric conductivity is provided. The oxide semiconductor film comprises a crystalline region. The oxide semiconductor film has a first peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.4 nm?1 and less than or equal to 0.7 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 3.3 nm?1 and less than or equal to 4.1 nm?1. The oxide semiconductor film has a second peak of electron diffraction intensity with a full width at half maximum of greater than or equal to 0.45 nm?1 and less than or equal to 1.4 nm?1 in a region where a magnitude of a scattering vector is greater than or equal to 5.5 nm?1 and less than or equal to 7.1 nm?1.
    Type: Application
    Filed: February 4, 2021
    Publication date: May 27, 2021
    Inventors: Shunpei YAMAZAKI, Masashi TSUBUKU, Kengo AKIMOTO, Hiroki OHARA, Tatsuya HONDA, Takatsugu OMATA, Yusuke NONAKA, Masahiro TAKAHASHI, Akiharu MIYANAGA
  • Publication number: 20210126130
    Abstract: A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator.
    Type: Application
    Filed: August 24, 2018
    Publication date: April 29, 2021
    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Shunpei YAMAZAKI, Yoshinobu ASAMI, Takahisa ISHIYAMA, Motomu KURATA, Ryo TOKUMARU, Noritaka ISHIHARA, Yusuke NONAKA
  • Patent number: 10964903
    Abstract: To increase emission efficiency of a fluorescent light-emitting element by efficiently utilizing a triplet exciton generated in a light-emitting layer. The light-emitting layer of the light-emitting element includes at least a host material and a guest material. The triplet exciton generated from the host material in the light-emitting layer is changed to a singlet exciton by triplet-triplet annihilation (TTA). The guest material (fluorescent dopant) is made to emit light by energy transfer from the singlet exciton. Thus, the emission efficiency of the light-emitting element is improved.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: March 30, 2021
    Inventors: Yusuke Nonaka, Satoshi Seo, Harue Osaka, Tsunenori Suzuki, Takeyoshi Watabe
  • Publication number: 20210082920
    Abstract: A semiconductor device having high operation frequency is provided. The semiconductor device includes a transistor including a first conductive layer, a first insulating layer, a second insulating layer, a first oxide, a second oxide, a third oxide, a third insulating layer, and a second conductive layer that are stacked in this order, and a fourth insulating layer. The first conductive layer and the second conductive layer include a region overlapping with the second oxide. In a channel width direction of the transistor, a level of the bottom surface of the second oxide is from more than or equal to ?5 nm to less than 0 nm when a level of a region of the bottom surface of the second conductive layer which does not overlap with the second oxide is regarded as a reference.
    Type: Application
    Filed: January 15, 2019
    Publication date: March 18, 2021
    Inventors: Yusuke NONAKA, Noritaka ISHIHARA, Tomoki HIRAMATSU, Ryunosuke HONDA, Tomoyo KAMOGAWA, Ryota HODO, Katsuaki TOCHIBAYASHI, Shunpei YAMAZAKI
  • Publication number: 20210074852
    Abstract: A semiconductor device includes a semiconductor substrate, a body layer, a source region, a drift layer, a drain region, a gate insulating film, and a gate electrode. The semiconductor substrate has an active layer. An element region is included in the active layer and partitioned by a trench isolation portion. The body layer is disposed at a surface layer portion of the active layer. The source region is disposed at a surface layer portion of the body layer. The drift layer is disposed at the surface layer portion of the active layer. The drain region is disposed at a surface layer portion of the drift layer. The gate insulating film is disposed on a surface of the body layer. The gate electrode is disposed on the gate insulating film. One of the source region and the drain region being a high potential region is surrounded by the other one being a low potential region.
    Type: Application
    Filed: November 19, 2020
    Publication date: March 11, 2021
    Inventors: SHOGO IKEURA, YUSUKE NONAKA, SHINICHIROU YANAGI
  • Publication number: 20210074631
    Abstract: On a substrate, a wiring layer is arranged by sequentially stacking a first insulation film, a lower electrode, a second insulation film, an intermediate electrode, a third insulation film, and an upper electrode in this order. A capacitor includes a first capacitor having the lower electrode and the intermediate electrode, and a second capacitor having the intermediate electrode and the upper electrode. The first capacitor and the second capacitor are connected in parallel to each other by electrically connecting the lower electrode and the upper electrode. Further, the intermediate electrode has a higher potential than the lower layer electrode and the upper electrode.
    Type: Application
    Filed: October 30, 2020
    Publication date: March 11, 2021
    Inventors: Shin TAKIZAWA, Seiji NOMA, Yusuke NONAKA, Shinichirou YANAGI, Atsushi KASAHARA, Shogo IKEURA
  • Publication number: 20210063315
    Abstract: A detection apparatus includes a memory and a processor coupled to the memory. The processor configured to determine a position of each of a plurality of partial images relative to the wide-angle image, to extract, from among the plurality of partial images, a pair of partial images that are consecutive in an image-capturing order, that do not have an overlapping portion, and at least one of which includes an image of a damaged portion, to detect a region of the outside of the partial image to which a damaged portion is estimated to be continuous, as an image-capturing omission candidate region, to determine the image-capturing omission candidate region as an image-capturing omission region, in a case where the image-capturing omission candidate region is included in none of the other partial images, and to issue, based on the position, a notification of a position corresponding to the image-capturing omission region.
    Type: Application
    Filed: August 11, 2020
    Publication date: March 4, 2021
    Applicant: FUJITSU LIMITED
    Inventors: YUSUKE NONAKA, EIGO SEGAWA
  • Patent number: 10930873
    Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: February 23, 2021
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuharu Ohsawa, Yusuke Nonaka, Takahiro Ishisone, Satoshi Seo, Takuya Kawata